296 results on '"Campion, R.P."'
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2. [formula omitted] thick GaAs X-ray p[formula omitted]-i-n[formula omitted] photodiode grown by MBE
3. Extreme voltage recovery in GaAs:Ti intermediate band solar cells
4. Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN
5. Characterization and local magnetic modification of ion irradiated GaMnAs
6. Domain wall resistance in perpendicular (Ga,Mn)As: Dependence on pinning
7. Temperature effects during the growth of In xGa 1− xN films through the whole compositional range by plasma-assisted molecular beam epitaxy
8. A theoretical model for the MBE growth of AlGaAsN using ammonia as the N source
9. Optically Gated Terahertz-Field-Driven Switching of Antiferromagnetic CuMnAs
10. Potential of Mn doped In 1−xGa xN for implementing intermediate band solar cells
11. Magneto-optical and micromagnetic simulation study of the current-driven domain wall motion in ferromagnetic (Ga,Mn)As
12. The origin and control of the sources of AMR in (Ga,Mn)As devices
13. A complementary geometric model for the growth of GaN nanocolumns prepared by plasma-assisted molecular beam epitaxy
14. Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content
15. Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxy
16. Optically gated terahertz-field-driven switching of antiferromagnetic CuMnAs
17. Free-standing zinc-blende (cubic) GaN layers and substrates
18. Coercivity enlargement in (Ga,Mn)As thin films with small amount of MnAs nanoclusters
19. Coulomb blockade anisotropic magnetoresistance and voltage controlled magnetic switching in a ferromagnetic GaMnAs single electron transistor
20. Ordinary and extraordinary Coulomb blockade magnetoresistance in a (Ga, Mn)As single electron transistor
21. Use of band-gap thermometry to investigate the growth of GaN on sapphire and GaAs
22. Evaluation of sapphire substrate heating behaviour using GaN band-gap thermometry
23. Homo- and Hetero-Epitaxial Gallium Nitride Grown by Molecular Beam Epitaxy
24. Studies of the Vortex Related Phase Transition in YBCO Thin Films with Strong In-Plane Anisotropy
25. Ultrafast Strain-Induced Charge Transport in Semiconductor Superlattices
26. Stress-Induced Phenomena in Elastomers, and their Influence on Design and Performance of O-Rings
27. Photoelectron spectroscopy study of Ga 1− xMn xAs(0 0 1) surface oxide and low temperature cleaning
28. Structural characterisation of zinc-blende Ga 1−xMn xN epilayers grown by MBE as a function of Ga flux
29. Molecular beam epitaxy of p-type cubic GaMnN layers
30. Spin flop and crystalline anisotropic magnetoresistance in CuMnAs
31. Light-emitting diodes based on GaMnAs/GaAs heterostructures
32. MOMBE growth studies of GaN using metalorganic sources and nitrogen
33. The growth of GaMnAs films by molecular beam epitaxy using arsenic dimers
34. Arsenic incorporation in GaN during growth by molecular beam epitaxy
35. High-quality GaMnAs films grown with arsenic dimers
36. PLTC NR compound for a high duty offshore oil-production engineering application
37. 30μm thick GaAs X-ray p+-i-n+ photodiode grown by MBE
38. Strong blue emission from GaN isoelectronically doped with arsenic
39. The transition from As-doped GaN, showing blue emission, to GaNAs alloys in films grown by molecular beam epitaxy
40. Structural characterisation of Al grown on group III-nitride layers and sapphire by molecular beam epitaxy
41. The influence of arsenic incorporation on the optical properties of As-doped GaN films grown by molecular beam epitaxy using As 4 molecules
42. Mn L3,2 x-ray absorption from (Ga,Mn)As and (Ga,Mn)N
43. Magnetic domain imaging of ferromagnetic GaMnAs films
44. Surface reconstruction patterns of AlN grown by molecular beam epitaxy on sapphire
45. Growth of GaNAs films by molecular beam epitaxy
46. Inertial displacement of a domain wall excited byultra-short circularly polarized laser pulses
47. Imaging current-induced switching of antiferromagnetic domains in CuMnAs
48. Investigation of the electrical dissipation properties of in-plane aligned a-axis YBCO films grown on (100) LaSrGaO 4 substrates
49. The electrical properties of YBa 2Cu 3O 7− δ thin films of various thicknesses grown upon MgO substrates
50. Arsenic-doped GaN grown by molecular beam epitaxy
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