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Properties of fragmentation from an explosively driven 316L stainless steel spherical shell section fabricated by a laser powder bed additive manufacturing process with minimal surface finishing are investigated. This shell is driven by an insensitive high explosive, resulting in high strain rate deformation (>8 × 103 s−1) and failure of the stainless steel. Photonic Doppler velocimetry measures the expansion rate; dynamic radiography and high-speed imaging capture the fracture behavior of the stainless steel. The fracture response of the additively manufactured stainless steel shell is compared to published experimental results on additively manufactured 316L stainless steel and conventionally manufactured wrought 316L and 304 stainless steel shell fragmentation. Despite preferred crack orientation, suggesting the influence of surface grooves on fracture time, fragment size is identical to that measured in a similar experiment on wrought 304 stainless steel. Further analysis indicates that the 316L additively manufactured stainless steel shell exhibits comparable spall strength and fragmentation toughness to conventionally manufactured stainless steel yet lower failure strain due to surface stress concentrations. [ABSTRACT FROM AUTHOR]

Crystal growth rates during laser-induced, liquid-mediated crystallization of amorphous Ge were measured with movie-mode dynamic transmission electron microscopy (MM-DTEM), a photoemission microscopy technique with nanosecond-scale time resolution. Films of 50-nm thick amorphous Ge were crystallized using a 12-ns laser pulse with a Gaussian spatial profile, which established high local temperature gradients in the specimen. Crystallization proceeded by the formation of a central zone with a high nucleation rate (zone I), followed by liquid-mediated outward growth of columnar grains (zone II), followed by spiraling growth (zone III) until the crystallization halted in cooler parts of the specimen. Zone II growth was imaged for several laser pulse energies with 20-ns electron pulses with 95 ns between frames. A thin liquid layer between the solid amorphous phase and the advancing crystallization front during zone II growth was imaged. The zone II growth rate for each experiment remained nearly constant although the crystallization front passes through a large temperature gradient. Measured growth rates ranged from 5.7 to 13.6 m/s, consistent with transient liquid layer mediated growth rather than solid-state growth. In contrast with a previous report, the growth rate did not increase systematically with laser energy or absorbed energy. The new results, together with previously reported data, suggest that both sets of experiments were conducted under conditions where the growth rate saturates near its maximum value. A phenomenological model based on the concept of upper and lower threshold temperatures for the zone II growth was fitted to the data from these experiments and previous MM-DTEM crystallization experiments. [ABSTRACT FROM AUTHOR]

In situ investigations of rapid solidification in polycrystalline Al thin films were conducted using nano-scale spatio-temporal resolution dynamic transmission electron microscopy. Differences in crystal growth rates and asymmetries in melt pool development were observed as the heat extraction geometry was varied by controlling the proximity of the laser-pulse irradiation and the associated induced melt pools to the edge of the transmission electron microscopy support grid, which acts as a large heat sink. Experimental parameters have been established to maximize the reproducibility of the material response to the laser-pulse-related heating and to ensure that observations of the dynamical behavior of the metal are free from artifacts, leading to accurate interpretations and quantifiable measurements with improved precision. Interface migration rate measurements revealed solidification velocities that increased consistently from ~1.3m s-1 to ~2.5m s-1 during the rapid solidification process of the Al thin films. Under the influence of an additional large heat sink, increased crystal growth rates as high as 3.3m s-1 have been measured. The in situ experiments also provided evidence for development of a partially melted, two-phase region prior to the onset of rapid solidification facilitated crystal growth. Using the experimental observations and associated measurements as benchmarks, finite-element modeling based calculations of the melt pool evolution after pulsed laser irradiation have been performed to obtain estimates of the temperature evolution in the thin films. [ABSTRACT FROM AUTHOR]

We describe the energy and sequence of phase transformations in multilayered Al/Zr foils with atomic ratios of 3 Al:1 Zr during low temperature (<350 °C) heat treatments in a differential scanning calorimeter. The initial phase formed is an Al-rich amorphous phase that appears to grow by Zr diffusion through the amorphous phase. The subsequent nucleation and growth of tetragonal Al3Zr along the Al/amorphous layer interface is mediated by Al diffusion through the crystalline intermetallic phase. Diffusion coefficients associated with these processes are higher than expected from reports of diffusivities measured at higher temperatures. The inferred heat of formation of the tetragonal Al3Zr phase is 1240 ± 40 J/g (53 ± 2 kJ/mol atom). No anomalous variation in the energy or sequence of phase transformations is found with bilayer thickness for samples with bilayer thickness in the range of 17 nm to 90 nm despite anomalies in the bilayer dependence of self-propagating reaction velocities in the same foils. [ABSTRACT FROM AUTHOR]

Chalcogenide-based phase-change materials have wide use in optical recording media and are growing in importance for use in non-volatile electronic memory. For both applications, rapid switching between the amorphous and crystalline phases is necessary, and understanding the changes during rapidly driven phase transitions is of scientific and technological significance. Laser-induced crystallization and amorphization occur rapidly and changes in atomic structure, microstructure, and temperature are difficult to observe experimentally and determine computationally. We have used nanosecond-scale time-resolved diffraction with intense electron pulses to study Ge2Sb2Te5 during laser crystallization. Using a unique and unconventional specimen geometry, cycling between the amorphous and crystalline phases was achieved, enabling in situ transmission electron microscope (TEM) study of both microstructural and crystallographic changes caused by repeated switching. Finite element analysis was used to simulate interactions of the laser with the nano-structured specimens and to model the rapidly changing specimen temperature. Such time-resolved experimental methods combined with simulation of experimentally inaccessible physical characteristics will be fundamental to advancing the understanding of rapidly driven phase transformations. [ABSTRACT FROM AUTHOR]

Polycrystalline and mosaic bicrystalline titanium films were subjected to steep heating/cooling rate of 1011/108 K s-1 by laser pulsing. The induced phase transformations were followed by imaging and diffraction with a dynamic transmission electron microscope on the time scale of nanoseconds. On heating the film up to near the melting point with a 6-ns laser pulse, the low-temperature hcp phase transformed to the high-temperature bcc phase, with a nucleation rate of 1025 m-3 s-1 and a crystal-growth velocity of about 1000 m s-1. Quenching of molten Ti first produced the bcc phase, which in turn transformed to the hcp phase within a few microseconds. Thus, hcp-bcc transformations occur in Ti, even at the above high thermal rates. They are martensitic and not diffusion limited as claimed for transformations at low thermal rates. [ABSTRACT FROM AUTHOR]

GeSb6Te is a chalcogenide-based phase change material that has shown great ptoential for use in solid-state memory devices. The crystallization kinetics of amorphous thin films of GeSb6Te during laser crystallization were followed with dynamic transmission electron microscopy, a photo-emission electron microscopy technique with nanosecond-scale time resolution. Nine-frame movies of crystal growth were taken during laser crystallization. The nucleation rate is observed to be very low and the growth rates are very high, up to 10.8 m s−1 for amorphous as-deposited films and significantly higher for an amorphous film subject to sub-threshold laser annealing before crystallization. The measured growth rates exceed any directly measured growth rate of a phase change material. The crystallization is reminiscent of explosive crystallization of elemental semiconductors both in the magnitude of the growth rate and in the resulting crystalline microstructures. [ABSTRACT FROM AUTHOR]

Extrapolating from a brief survey of the literature, we outline a vision for the future development of time-resolved electron probe instruments that could offer levels of performance and flexibility that push the limits of physical possibility. This includes a discussion of the electron beam parameters (brightness and emittance) that limit performance, the identification of a dimensionless invariant figure of merit for pulsed electron guns (the number of electrons per lateral coherence area, per pulse), and calculations of how this figure of merit determines the trade-off of spatial against temporal resolution for different imaging modes. Modern photonics' ability to control its fundamental particles at the quantum level, while enjoying extreme flexibility and a very large variety of operating modes, is held up as an example and a goal.We argue that this goal may be approached by combining ideas already in the literature, suggesting the need for large-scale collaborative development of next-generation time-resolved instruments. [ABSTRACT FROM AUTHOR]