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The Dark Energy Camera is a new imager with a 2.2-degree diameter field of view mounted at the prime focus of the Victor M. Blanco 4-meter telescope on Cerro Tololo near La Serena, Chile. The camera was designed and constructed by the Dark Energy Survey Collaboration, and meets or exceeds the stringent requirements designed for the wide-field and supernova surveys for which the collaboration uses it. The camera consists of a five element optical corrector, seven filters, a shutter with a 60 cm aperture, and a CCD focal plane of 250 micron thick fully-depleted CCDs cooled inside a vacuum Dewar. The 570 Mpixel focal plane comprises 62 2kx4k CCDs for imaging and 12 2kx2k CCDs for guiding and focus. The CCDs have 15 microns x15 microns pixels with a plate scale of 0.263 arc sec per pixel. A hexapod system provides state-of-the-art focus and alignment capability. The camera is read out in 20 seconds with 6-9 electrons readout noise. This paper provides a technical description of the camera's engineering, construction, installation, and current status., Comment: submitted to AJ Corresponding Authors H. T. Diehl (diehl@fnal.gov)

The presence of atomic-scale defects at multilayer interfaces significantly degrades performance in CdTe-based photovoltaic technologies. The ability to accurately predict and understand defect formation mechanisms during overlayer growth is, therefore, a rational approach for improving the efficiencies of CdTe materials. In this work, we utilize a recently developed CdTe bond-order potential (BOP) to enable accurate molecular dynamics (MD) simulations for predicting defect formation during multilayer growth. A detailed comparison of our MD simulations to high-resolution transmission electron microscopy experiments verifies the accuracy and predictive power of our approach. Our simulations further indicate that island growth can reduce the lattice mismatch induced defects. These results highlight the use of predictive MD simulations to gain new insight on defect reduction in CdTe overlayers, which directly addresses efforts to improve these materials.

CdTe has been a special semiconductor for constructing the lowest-cost solar cells and the CdTe-based Cd1-xZnxTe alloy has been the leading semiconductor for radiation detection applications. The performance currently achieved for the materials, however, is still far below the theoretical expectations. This is because the property-limiting nanoscale defects that are easily formed during the growth of CdTe crystals are difficult to explore in experiments. Here we demonstrate the capability of a bond order potential-based molecular dynamics method for predicting the crystalline growth of CdTe films during vapor deposition simulations. Such a method may begin to enable defects generated during vapor deposition of CdTe crystals to be accurately explored.

Baryon Acoustic Oscillations (BAO) provide a standard ruler of known physical length, making it a promising probe of the nature of dark energy. The detection of BAO requires measuring galaxy positions and redshifts. "Transversal" (angular distance) BAO measure the angular size of this scale, while "line-of-sight" (or "radial") BAO require precise redshifts, but provide a direct measurement of the Hubble parameter at different redshifts, a more sensitive probe of dark energy. The main goal of this paper is to show that a precision of sigma_z ~0.003(1 + z) is sufficient to measure BAO in the radial direction. This precision can be achieved for bright, red galaxies, by using a filter system comprising about 40 filters, each with a width of ~100 A, from ~ 4000 A to ~ 8000 A, supplemented by two broad-band filters. We describe a practical implementation, a new galaxy survey, PAU, to be carried out with a telescope/camera combination with an etendue of about 20 m^2deg^2, and covering 8000 sq. deg. in the sky in four years. We expect to measure positions and redshifts for over 14 million red, early-type galaxies with L > L* and i_AB < 22.5 in the interval 0.1 < z < 0.9, with sigma_z < 0.003(1 + z). This population has a number density n > 10^-3 Mpc^-3 h^3 within the 9 (Gpc/h)^3 volume of the survey, ensuring that the error in the determination of the BAO scale is not limited by shot-noise. By itself, such a survey will deliver precisions of order 5% in the dark-energy equation of state parameter w, if assumed constant, and can determine its time derivative when combined with future CMB measurements. In addition, PAU will yield high-quality redshift and low-resolution spectroscopy for hundreds of millions of other galaxies., Comment: 56 pages, 18 figures. Version 4 fixes figures 5 and 9 to 14 that had been erroneously uploaded in v2 and v3. The figures were however correct in version 1

Before the discovery of superconductivity in an oxide of Bi, Sr, and Cu, the system Bi-Sr-Cu-O had not been studied, although several solid phases had been identified in the two-component regions of the ternary system Bi2O3-Si-O-CuO. The oxides Sr2CuO3, SrCu2O2, SrCuO2, and Bi2CuO4 were then well known and characterized, and the phase diagram of the binary system Bi2O3-SrO had been established in the temperature range 620 to 1000 C. Besides nine solutions of compositions Bi(2-2x) Sr(x) O(3-2x) and different symmetries, this diagram includes three definite compounds of stoichiometries Bi(2)BrO4. Bi2Sr2O5, and Bi2Sr3O6 (x - 0.50, 0.67 and 0.75 respectively), only the second of which with known unit-cell of orthorhombic symmetry, dimensions (A) a = 14.293(2), b = 7.651(2), c = 6.172(1), and z = 4. The first superconducting oxide in the system Bi-Sr-Cu-O was initially formulated as Bi2Sr2Cu2O(7+x), with an orthorhombic unit-cell of parameters (A) a = 5.32, b = 26.6, c = 48.8. In a preliminary study the same oxide was formulated with half the copper content, Bi(2)Sr(2)CuO(6+x), and index its reflections assuming an orthorhombic unit-cell of dimensions (A) a = 5.390(2), b = 26.973(8), c = 24.69(4). Subsequent studies by diffraction techniques have confirmed the composition 2:2:1. A new family of oxygen-deficient perovskites, was characterized, after identifying by x ray diffraction the phases present in the products of thermal treatments of about 150 mixtures of analytical grade Bi2O3, Sr(OH)2-8H2O and CuO at different molar ratios. X ray diffraction data are presented for some other oxides of Bi and Sr, as well as for various quaternary oxides, among them an oxide of Bi, Sr, and Cu.

Before the discovery of superconductivity in an oxide of Bi, Sr, and Cu, the system Bi-Sr-Cu-O had not been studied, although several solid phases had been identified in the two-component regions of the ternary system Bi2O3-SrO-CuO. The oxides Sr2CuO3, SrCu2O2, SrCuO2, and Bi2CuO4 were then well known and characterized, and the phase diagram of the binary system Bi2O3 -SrO had been established in the temperature range 620 to 1000 C. Besides nine solutions of compositions Bi(2-2x) Sr(x) O(3-2x) and different symmetries, this diagram includes three definite compounds of stoichiometries Bi(2)SrO4, Bi2Sr2O5, and Bi2Sr3O6 (x = 0.50, 0.67 and 0.75 respectively), only the second of which with known unit-cell of orthorhombic symmetry, dimensions (A) a = 14.293(2), b = 7.651(2), c = 6.172(1), and z = 4. The first superconducting oxide in the system Bi-Sr-Cu-O was initially formulated as Bi2Sr2Cu2O(7+x), with an orthorhombic unit-cell of parameters (A) a = 5.32, b = 26.6, c = 48.8. In a preliminary study the same oxide was formulated with half the copper content, Bi(2)Sr(2)CuO(6+x), and indexed its reflections assuming an orthorhombic unit-cell of dimensions (A) a = 5.390(2), b = 26.973(8), c = 24.69(4). Subsequent studies by diffraction techniques have confirmed the composition 2:2:1. A new family of oxygen-deficient perovskites, was characterized, after identifying by x ray diffraction the phases present in the products of thermal treatments of about 150 mixtures of analytical grade Bi2O3, Sr(OH)2-8H2O and CuO at different molar ratios. X ray diffraction data are presented for some other oxides of Bi and Sr, as well as for various quaternary oxides, among them an oxide of Bi, Sr, and Cu.