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2 results on '"Caio E. de Oliveira"'

1. Author Correction: Optical Absorption Exhibits Pseudo-Direct Band Gap of Wurtzite Gallium Phosphide

Author

Hélio T. Obata, Mônica A. Cotta, Fernando Iikawa, Guilherme Matos Sipahi, Caio E. de Oliveira, Fábio D. Bonani, O. D. D. Couto, Bruno César Gregório da Silva, and Mauricio M. de Lima

Subjects
Multidisciplinary, Materials science, lcsh:R, Analytical chemistry, lcsh:Medicine, chemistry.chemical_compound, chemistry, Gallium phosphide, lcsh:Q, Direct and indirect band gaps, lcsh:Science, Absorption (electromagnetic radiation), Author Correction, Wurtzite crystal structure
Abstract

Definitive evidence for the direct band gap predicted for Wurtzite Gallium Phosphide (WZ GaP) nanowires has remained elusive due to the lack of strong band-to-band luminescence in these materials. In order to circumvent this problem, we successfully obtained large volume WZ GaP structures grown by nanoparticle-crawling assisted Vapor-Liquid-Solid method. With these structures, we were able to observe bound exciton recombination at 2.14 eV with FHWM of approximately 1 meV. In addition, we have measured the optical absorption edges using photoluminescence excitation spectroscopy. Our results show a 10 K band gap at 2.19 eV and indicate a weak oscillator strength for the lowest energy band-to-band absorption edge, which is a characteristic feature of a pseudo-direct band gap semiconductor. Furthermore, the valence band splitting energies are estimated as 110 meV and 30 meV for the three highest bands. Electronic band structure calculations using the HSE06 hybrid density functional agree qualitatively with the valence band splitting energies.

Published
2020

2. Optical Absorption Exhibits Pseudo-Direct Band Gap of Wurtzite Gallium Phosphide

Author

Fernando Iikawa, Fábio D. Bonani, Mauricio M. de Lima, Hélio T. Obata, Guilherme Matos Sipahi, Caio E. de Oliveira, Bruno César Gregório da Silva, Mônica A. Cotta, and O. D. D. Couto

Subjects
Materials science, Electronic properties and materials, Oscillator strength, Band gap, Exciton, lcsh:Medicine, 02 engineering and technology, 01 natural sciences, Molecular physics, Article, chemistry.chemical_compound, Condensed Matter::Materials Science, 0103 physical sciences, Gallium phosphide, Photoluminescence excitation, lcsh:Science, Electronic band structure, Wurtzite crystal structure, 010302 applied physics, Multidisciplinary, Nanoscale materials, Nanowires, lcsh:R, 021001 nanoscience & nanotechnology, ABSORÇÃO DA LUZ, chemistry, Semiconductors, Raman spectroscopy, lcsh:Q, Direct and indirect band gaps, 0210 nano-technology
Abstract

Definitive evidence for the direct band gap predicted for Wurtzite Gallium Phosphide (WZ GaP) nanowires has remained elusive due to the lack of strong band-to-band luminescence in these materials. In order to circumvent this problem, we successfully obtained large volume WZ GaP structures grown by nanoparticle-crawling assisted Vapor-Liquid-Solid method. With these structures, we were able to observe bound exciton recombination at 2.14 eV with FHWM of approximately 1 meV. In addition, we have measured the optical absorption edges using photoluminescence excitation spectroscopy. Our results show a 10 K band gap at 2.19 eV and indicate a weak oscillator strength for the lowest energy band-to-band absorption edge, which is a characteristic feature of a pseudo-direct band gap semiconductor. Furthermore, the valence band splitting energies are estimated as 110 meV and 30 meV for the three highest bands. Electronic band structure calculations using the HSE06 hybrid density functional agree qualitatively with the valence band splitting energies.

Published
2020

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