1. Properties of Si quantum dots
- Author
-
Cadogan, Carolyn C. F
- Subjects
optical properties ,Condensed Matter::Materials Science ,silicon nitride ,Condensed Matter::Other ,aluminium oxide ,Physics::Optics ,ion implantation ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Condensed Matter Physics ,Silicon quantum dots - Abstract
The fundamental properties of matter in confined particles change dramatically due to quantum effects. In this work, we have explored the optical properties of silicon quantum dots (Si-QDs) embedded in Si3N4; and the role of crystallinity on the optical properties and formation of Si-QDs in Al2O3. This work examined the role of (1) annealing temperature and the composition of the film, (2) Al doping of the host Si3N4 film, (3) doping Si-QDs and (4) Al and P passivation of Si-QDs on the PL intensity of Si-QDs embedded in Si3N4. Photoluminescence (PL), time-resolved photoluminescence (TRPL), X-ray absorption near edge spectroscopy (XANES), X-ray excited optical luminescence (XEOL), elastic recoil detection (ERD), positron annihilation spectroscopy (PAS) and Fourier-Transform infrared (FTIR) spectroscopy measurements were used for characterization. We have found that the luminescence originated from both quantum confinement effects and defects. H, Al and P passivation was found to increase the PL intensity of Si-QDs in Si3N4 while impurities such as Cr3+ and oxygen vacancies dominate the PL spectra for Si-QDs in Al2O3.
- Published
- 2018