1. Laser Desorption Ionisation Time-of-Flight Mass Spectrometry of Chalcogenide Glasses from (GeSe2)100-x(Sb2Se3)x System
- Author
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Marek Bouška, Virginie Nazabal, Katarína Šútorová, Petr Němec, Lubomír Prokeš, Josef Havel, Institut des Sciences Chimiques de Rennes (ISCR), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), R&D Center for Low-Cost Plasma and Nanotechnology Surface Modifications, Masaryk University [Brno] (MUNI), Department of Physical Electronics, Department of Chemistry (A14/107), Department of Graphic Arts and Photophysics [University of Pardubice], Faculty of Chemical Technology [University of Pardubice], University of Pardubice-University of Pardubice, 13-05082S, Grantová Agentura České Republiky, CZ.1.05/2.1.00/03.0086, European Regional Development Fund, CEPLANT, CZ.1.07/2.3.00/30.0058, Ministry of Education, Youth and Sports of the Czech Republic, Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), and Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)
- Subjects
Materials science ,Chalcogenide ,Analytical chemistry ,[CHIM.MATE]Chemical Sciences/Material chemistry ,Mass spectrometry ,chemistry.chemical_compound ,chemistry ,Desorption ,Ionization ,Materials Chemistry ,Ceramics and Composites ,Time-of-flight mass spectrometry ,Thin film ,Ternary operation ,Stoichiometry - Abstract
International audience; Laser Desorption Ionization Time-of-Flight Mass Spectrometry (LDI TOFMS) was used to characterize chalcogenide glasses from pseudobinary (GeSe2)100-x(Sb2Se3)x system, where x = 5-60, aiming description of their partial structure through the anal. of the plasma formed due to interaction of pulsed laser beam with studied glasses. The plasma contains pos. or neg. charged clusters; their stoichiometry was detd. as Sec- (c = 2-3), Sb+, Se2+, and Sb3+; binary GeSec+, SbSec+/- (c = 1-2), SbbSec+ (b = 2-3, c = 1-4), GeaSb3+ (a = 1-4), Sb2Sec- (c = 3-4), SbSe3-, and Sb3Se5+; ternary GeSbSe2+, GeSbSec- (c = 3-5), GeSbbSe+ (b = 4-5), and Ge9Sb2Sec+ (c = 5-7) ones. Described method is generally useful not only for partial structural characterization of chalcogenide glasses and corresponding thin films but also for evaluation of their contamination with oxygen and/or hydrogen.
- Published
- 2015
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