1. Growth and characterization of two-dimensional transition metal dichalcogenide in-plane heterostructures
- Author
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Corso, Martina, Pascual, José I., CSIC-UPV - Centro de Física de Materiales (CFM), Angulo Portugal, Paula, Corso, Martina, Pascual, José I., CSIC-UPV - Centro de Física de Materiales (CFM), and Angulo Portugal, Paula
- Abstract
2D materials have attracted signi cant interest due to their unique physical, electronic and optical properties. Among them, some 2D materials present strong electron-hole con nement, extreme bendability, and high transparency. In particular, thin transition metal dichalcogendides (TMDs) represent a nearly ideal class of 2D materials for fundamental research at the limit of single-atom thickness, and have the potential to open up new technological opportunities beyond the reach of existing materials. TMDs single layers exhibit emergent characteristics different than those of their bulk counterparts, many of which show tunable electronic structure that can undergo for example transition from an indirect electronic band gap in crystals to a direct band gap in the monolayer regime. The hybridization of 2D TMDs with other layered materials or even other TMDs to build TMD-based heterostructures is a very effective way to boost their overall properties and thus expand their applications. One of the most appealing advantages offered by heterostructures is the design of new arti cial materials with tailored properties that are not exactly the ones of their original components, but new ones. For instance, the alignment of band structure at the interface of the heterostructure plays a critical role in optimizing the carrier transfer path in photodetectors. Although complex heterostructures have been fabricated via the van der Waals vertical stacking of different 2D materials, the in-situ fabrication of high-quality lateral heterostructures remains a challenge. The aim of this work is to explore the growth of novel TMD lateral heterostructures with Molecular Beam Epitaxy (MBE). We have grown metal-semiconductor and metal-superconductor TMD junctions in ultra-high vacuum conditions and characterized by Re ection high-energy electron diffraction (RHEED) and Atomic Force Microscopy (AFM). We have explored at first the suitability of PtSe2 and MoSe2 as semiconductors for a metal-s
- Published
- 2021