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9. Negative Kerr nonlinearity of graphene as seen via chirped-pulse-pumped self-phase modulation

Author

Vermeulen, Nathalie, Castello-Lurbe, David, Cheng, JinLuo, Pasternak, Iwona, Krajewska, Aleksandra, Ciuk, Tymoteusz, Strupinski, Wlodek, Thienpont, Hugo, and Van Erps, Jurgen

Subjects
Physics - Optics
Abstract

We experimentally demonstrate a negative Kerr nonlinearity for quasi-undoped graphene. Hereto, we introduce the method of chirped-pulse-pumped self-phase modulation and apply it to graphene-covered silicon waveguides at telecom wavelengths. The extracted Kerr-nonlinear index for graphene equals n2,gr = -10^(-13) m^2/W. Whereas the sign of n2,gr turns out to be negative in contrast to what has been assumed so far, its magnitude is in correspondence with that observed in earlier experiments. Graphene's negative Kerr nonlinearity strongly impacts how graphene should be exploited for enhancing the nonlinear response of photonic (integrated) devices exhibiting a positive nonlinearity. It also opens up the possibility of using graphene to annihilate unwanted nonlinear effects in such devices, to develop unexplored approaches for establishing Kerr processes, and to extend the scope of the "periodic poling" method often used for second-order nonlinearities towards third-order Kerr processes. Because of the generic nature of the chirped-pulse-pumped self-phase modulation method, it will allow fully characterizing the Kerr nonlinearity of essentially any novel (2D) material.

Published
2016
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12. Properties of Z 1 and Z 2 Deep-Level Defects in n -Type Epitaxial and High-Purity Semi-Insulating 4 H -SiC.

Author

Kamiński, Paweł, Kozłowski, Roman, Żelazko, Jarosław, Kościewicz, Kinga, and Ciuk, Tymoteusz

Subjects
DEEP level transient spectroscopy, ENERGY levels (Quantum mechanics), STIMULATED emission, ELECTRON traps, ACTIVATION energy
Abstract

For the first time, the Z1 and Z2 defects with closely spaced energy levels having negative-U properties are revealed in high-purity semi-insulating (HPSI) 4H-SiC using Laplace-transform photoinduced transient spectroscopy (LPITS). In this material, after switching off the optical trap-filling pulse, either the one-electron or the two-electron thermally stimulated emission from these defects is observed at temperatures 300–400 K. It is found that the former corresponds to the Z10/+ and Z20/+ transitions with the activation energies of 514 and 432 meV, respectively, and the latter is associated with the Z1−/+ and Z2−/+ transitions with the activation energies of 592 meV and 650 meV, respectively. The Z1 and Z2 defect concentrations are found to increase from 2.1 × 1013 to 2.2 × 1014 cm−3 and from 1.2 × 1013 to 2.7 × 1014 cm−3, respectively, after the heat treatment of HPSI 4H-SiC samples at 1400 °C for 3 h in Ar ambience. Using the electrical trap-filling pulse, only the thermal two-electron emission from each defect was observed in the epitaxial 4H-SiC through Laplace-transform deep level transient spectroscopy (LDLTS). The activation energies for this process from the Z1 and Z2 defects are 587 and 645 meV, respectively, and the defect concentrations are found to be 6.03 × 1011 and 2.64 × 1012 cm−3, respectively. It is postulated that the Z1 and Z2 defects are the nearest-neighbor divacancies involving the carbon and silicon vacancies located at mixed, hexagonal (h), and quasi-cubic (k) lattice sites. [ABSTRACT FROM AUTHOR]

Published
2024
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25. Production and processing of graphene and related materials

Author

Backes, Claudia, Abdelkader, Amr M., Andrieux-Ledier, Amandine, Arenal, Raul, Azpeitia, Jon, Balakrishnan, Nilanthy, Banszerus, Luca, Barjon, Julien, Bartali, Ruben, Bellani, Sebastiano, Berger, Claire, Berger, Reinhard, Ortega, M M Bernal, Bernard, Carlo, Beton, Peter H., Bianco, Alberto, Bonaccorso, Francesco, Barin, Gabriela Borin, Botas, Cristina, Bueno, Rebeca A, Carriazo, Daniel, Castellanos-Gomez, Andres, Christian, Meganne, Ciesielski, Artur, Ciuk, Tymoteusz, Cole, Matthew T., Coleman, Jonathan, Coletti, Camilla, Crema, Luigi, Cun, Huanyao, Dasler, Daniela, De Fazio, Domenico, Drieschner, Simon, Duesberg, Georg S., Fasel, Roman, Feng, Xinliang, Fina, Alberto, Forti, Stiven, Galiotis, Costas, Garberoglio, Giovanni, Garrido, Jose Antonio, Gibertini, Marco, Greber, Thomas, Hauke, Frank, Hemmi, Adrian, Hernandez-Rodriguez, Irene, Hirsch, Andreas, Hodge, Stephen A., Huttel, Yves, Jepsen, Peter U., Jimenez, Ignacio, Kaiser, Ute, Kaplas, Tommi, Kim, HoKwon, Kis, Andras, Papagelis, Konstantinos, Kostarelos, Kostas, Krajewska, Aleksandra, Lee, Kangho, Li, Changfeng, Lipsanen, Harri, Liscio, Andrea, Lohe, Martin R., Loiseau, Annick, Lombardi, Lucia, Martin, Oliver, Martin-Gago, Jose Angel, Marzari, Nicola, McManus, John, Melucci, Manuela, Merino, Cesar, Merino, Pablo, Meyer, Andreas P., Miniussi, Elisa, Miseikis, Vaidotas, Mishra, Neeraj, Morandi, Vittorio, Munuera, Carmen, Nolan, Hugo, Ortolani, Luca, Ott, Anna K., Palacio, Irene, Palermo, Vincenzo, Parthenios, John, Pasternak, Iwona, Patane, Amalia, Prato, Maurizio, Prevost, Henri, Prudkovskiy, Vladimir, Pugno, Nicola, Rossi, Antonio, Ruffieux, Pascal, Setijadi, Eki, Seyller, Thomas, Speranza, Giorgio, Stampfer, Christoph, Stenger, Ingrid, Strupinski, Wlodek, Svirko, Yuri, Taioli, Simone, Teo, Kenneth B.K., Testi, Matteo, Tomarchio, Flavia, Tortello, Mauro, Treossi, Emanuele, Turchanin, Andrey, Vazquez, Ester, Villaro, Elvira, Whelan, Patrick R, Xia, Zhenyuan, Yakimova, Rositza, Yang, Sheng, Yazdi, G Reza, Yim, Chanyoung, Yoon, Duhee, Zhang, Xianghui, Zhuang, Xiaodong, Colombo, Luigi, Ferrari, Andrea C, and Garcia-Hernandez, Mar

Published
2020

26. Production and processing of graphene and related materials

Author

European Commission, García-Hernández, M. [0000-0002-5987-0647], Backes, Claudia, Abdelkader, Amr M., Alonso, Concepción, Andrieux-Ledier, Amandine, Arenal, Raúl, Azpeitia-Urkia, Jon, Balakrishnan, Nilanthy, Banszerus, Luca, Barjon, Julien, Bartali, Ruben, Bellani, Sebastiano, Melucci, Manuela, Beton, Peter H., Patane, Amalia, Muñoz, Roberto, Méndez, Javier, Merino, César, Zhang, Xianghui, Villaro, Elvira, Ortolani, Luca, Ruffieux, Pascal, Borin Barin, Gabriela, Miseikis, Vaidotas, Zhuang, Xiaodong, Pugno, Nicola, Yazdi, Reza G., Bernard, Carlo, Tortello, Mauro, Carriazo, Daniel, Parthenios, John, Rojo, Teófilo, Ott, Anna K., Tomarchio, Flavia, Coletti, Camilla, Palacio, Irene, Castellanos-Gómez, Andrés, Strupinski, Wlodek, Prevost, Henri, Cun, Huanyao, Pasternak, Iwona, Prudkovskiy, Vladimir, Feng, Xinliang, Coleman, Jonathan, Fasel, Román, Beyer, André, García-Hernández, Mar, Díez, Noel, Prato, Maurizio, Berger, Claire, Stenger, Ingrid, Bonaccorso, Francesco, Crema, Luigi, Botas, Cristina, Bueno, Rebeca A., Hemmi, Adrian, Hirsch, Andreas, Yang, Sheng, Ciesielski, Artur, Kenneth, Teo B. K., Ciuk, Tymoteusz, Cole, Matthew T., Bøggild, Peter, Berger, Reinhard, Bernal, M. Mar, Galiotis, Costas, Hodge, Stephen A., Drieschner, Simon, Garrido, Jose A., Bianco, Alberto, Kim, HoKwon, Setijadi, Eki, García Martínez, Jorge Manuel, Stampfer, Christoph, Speranza, Giorgio, Dasler, Daniela, Garberoglio, Giovanni, Duesberg, Georg S., Testi, Matteo, Lombardi, Lucia, Kaplas, Tommi, Gómez, Julio, Ferrari, Andrea C., Gölzhäuser, Armin, Schué, Léonard, Fina, Alberto, Forti, Stiven, Hernández-Rodríguez, Irene, Gibertini, Marco, Vázquez, Ester, Yakimova, Rositza, Yoon, Duhee, Martínez, José I., Martín-Gago, José A., Greber, Thomas, Hauke, Frank, López, María Francisca, Lee, Kangho, Merino-Mateo, Pablo, Kostarelos, Kostas, Seyller, Thomas, Papagelis, Konstantinos, Yim, Chanyoung, Nolan, Hugo, Kis, Andras, Huttel, Yves, Jepsen, Peter U., Rossi, Antonio, Morandi, Vittorio, Jiménez, Ignacio, Kaiser, Ute, Li, Changfeng, Loiseau, Annick, Svirko, Yuri, Colombo, Luigi, Krajewska, Aleksandra, Mayoral, Álvaro, Treossi, Emanuele, Meyer, Andreas P., Xia, Zhenyuan, Lipsanen, Harri, Munuera, C., Liscio, Andrea, Lohe, Martin R., Samorì, Paolo, Turchanin, Andrey, McManus, John, Martín, Oliver, Martín, Cristina, De-Fazio, Domenico, Palermo, Vincenzo, Martínez-Izquierdo, Lidia, Taioli, Simone, Christian, Meganne, Mishra, Neeraj, Marzari, Nicola, Whelan, Patrick R., Miniussi, Elisa, European Commission, García-Hernández, M. [0000-0002-5987-0647], Backes, Claudia, Abdelkader, Amr M., Alonso, Concepción, Andrieux-Ledier, Amandine, Arenal, Raúl, Azpeitia-Urkia, Jon, Balakrishnan, Nilanthy, Banszerus, Luca, Barjon, Julien, Bartali, Ruben, Bellani, Sebastiano, Melucci, Manuela, Beton, Peter H., Patane, Amalia, Muñoz, Roberto, Méndez, Javier, Merino, César, Zhang, Xianghui, Villaro, Elvira, Ortolani, Luca, Ruffieux, Pascal, Borin Barin, Gabriela, Miseikis, Vaidotas, Zhuang, Xiaodong, Pugno, Nicola, Yazdi, Reza G., Bernard, Carlo, Tortello, Mauro, Carriazo, Daniel, Parthenios, John, Rojo, Teófilo, Ott, Anna K., Tomarchio, Flavia, Coletti, Camilla, Palacio, Irene, Castellanos-Gómez, Andrés, Strupinski, Wlodek, Prevost, Henri, Cun, Huanyao, Pasternak, Iwona, Prudkovskiy, Vladimir, Feng, Xinliang, Coleman, Jonathan, Fasel, Román, Beyer, André, García-Hernández, Mar, Díez, Noel, Prato, Maurizio, Berger, Claire, Stenger, Ingrid, Bonaccorso, Francesco, Crema, Luigi, Botas, Cristina, Bueno, Rebeca A., Hemmi, Adrian, Hirsch, Andreas, Yang, Sheng, Ciesielski, Artur, Kenneth, Teo B. K., Ciuk, Tymoteusz, Cole, Matthew T., Bøggild, Peter, Berger, Reinhard, Bernal, M. Mar, Galiotis, Costas, Hodge, Stephen A., Drieschner, Simon, Garrido, Jose A., Bianco, Alberto, Kim, HoKwon, Setijadi, Eki, García Martínez, Jorge Manuel, Stampfer, Christoph, Speranza, Giorgio, Dasler, Daniela, Garberoglio, Giovanni, Duesberg, Georg S., Testi, Matteo, Lombardi, Lucia, Kaplas, Tommi, Gómez, Julio, Ferrari, Andrea C., Gölzhäuser, Armin, Schué, Léonard, Fina, Alberto, Forti, Stiven, Hernández-Rodríguez, Irene, Gibertini, Marco, Vázquez, Ester, Yakimova, Rositza, Yoon, Duhee, Martínez, José I., Martín-Gago, José A., Greber, Thomas, Hauke, Frank, López, María Francisca, Lee, Kangho, Merino-Mateo, Pablo, Kostarelos, Kostas, Seyller, Thomas, Papagelis, Konstantinos, Yim, Chanyoung, Nolan, Hugo, Kis, Andras, Huttel, Yves, Jepsen, Peter U., Rossi, Antonio, Morandi, Vittorio, Jiménez, Ignacio, Kaiser, Ute, Li, Changfeng, Loiseau, Annick, Svirko, Yuri, Colombo, Luigi, Krajewska, Aleksandra, Mayoral, Álvaro, Treossi, Emanuele, Meyer, Andreas P., Xia, Zhenyuan, Lipsanen, Harri, Munuera, C., Liscio, Andrea, Lohe, Martin R., Samorì, Paolo, Turchanin, Andrey, McManus, John, Martín, Oliver, Martín, Cristina, De-Fazio, Domenico, Palermo, Vincenzo, Martínez-Izquierdo, Lidia, Taioli, Simone, Christian, Meganne, Mishra, Neeraj, Marzari, Nicola, Whelan, Patrick R., and Miniussi, Elisa

Abstract

We present an overview of the main techniques for production and processing of graphene and related materials (GRMs), as well as the key characterization procedures. We adopt a 'hands-on' approach, providing practical details and procedures as derived from literature as well as from the authors' experience, in order to enable the reader to reproduce the results. Section I is devoted to 'bottom up' approaches, whereby individual constituents are pieced together into more complex structures. We consider graphene nanoribbons (GNRs) produced either by solution processing or by on-surface synthesis in ultra high vacuum (UHV), as well carbon nanomembranes (CNM). Production of a variety of GNRs with tailored band gaps and edge shapes is now possible. CNMs can be tuned in terms of porosity, crystallinity and electronic behaviour. Section II covers 'top down' techniques. These rely on breaking down of a layered precursor, in the graphene case usually natural crystals like graphite or artificially synthesized materials, such as highly oriented pyrolythic graphite, monolayers or few layers (FL) flakes. The main focus of this section is on various exfoliation techniques in a liquid media, either intercalation or liquid phase exfoliation (LPE). The choice of precursor, exfoliation method, medium as well as the control of parameters such as time or temperature are crucial. A definite choice of parameters and conditions yields a particular material with specific properties that makes it more suitable for a targeted application. We cover protocols for the graphitic precursors to graphene oxide (GO). This is an important material for a range of applications in biomedicine, energy storage, nanocomposites, etc. Hummers' and modified Hummers' methods are used to make GO that subsequently can be reduced to obtain reduced graphene oxide (RGO) with a variety of strategies. GO flakes are also employed to prepare three-dimensional (3d) low density structures, such as sponges, foams, hydro

Published
2020

28. Production and processing of graphene and related materials

Author

Backes, Claudia, primary, Abdelkader, Amr M, additional, Alonso, Concepción, additional, Andrieux-Ledier, Amandine, additional, Arenal, Raul, additional, Azpeitia, Jon, additional, Balakrishnan, Nilanthy, additional, Banszerus, Luca, additional, Barjon, Julien, additional, Bartali, Ruben, additional, Bellani, Sebastiano, additional, Berger, Claire, additional, Berger, Reinhard, additional, Ortega, M M Bernal, additional, Bernard, Carlo, additional, Beton, Peter H, additional, Beyer, André, additional, Bianco, Alberto, additional, Bøggild, Peter, additional, Bonaccorso, Francesco, additional, Barin, Gabriela Borin, additional, Botas, Cristina, additional, Bueno, Rebeca A, additional, Carriazo, Daniel, additional, Castellanos-Gomez, Andres, additional, Christian, Meganne, additional, Ciesielski, Artur, additional, Ciuk, Tymoteusz, additional, Cole, Matthew T, additional, Coleman, Jonathan, additional, Coletti, Camilla, additional, Crema, Luigi, additional, Cun, Huanyao, additional, Dasler, Daniela, additional, De Fazio, Domenico, additional, Díez, Noel, additional, Drieschner, Simon, additional, Duesberg, Georg S, additional, Fasel, Roman, additional, Feng, Xinliang, additional, Fina, Alberto, additional, Forti, Stiven, additional, Galiotis, Costas, additional, Garberoglio, Giovanni, additional, García, Jorge M, additional, Garrido, Jose Antonio, additional, Gibertini, Marco, additional, Gölzhäuser, Armin, additional, Gómez, Julio, additional, Greber, Thomas, additional, Hauke, Frank, additional, Hemmi, Adrian, additional, Hernandez-Rodriguez, Irene, additional, Hirsch, Andreas, additional, Hodge, Stephen A, additional, Huttel, Yves, additional, Jepsen, Peter U, additional, Jimenez, Ignacio, additional, Kaiser, Ute, additional, Kaplas, Tommi, additional, Kim, HoKwon, additional, Kis, Andras, additional, Papagelis, Konstantinos, additional, Kostarelos, Kostas, additional, Krajewska, Aleksandra, additional, Lee, Kangho, additional, Li, Changfeng, additional, Lipsanen, Harri, additional, Liscio, Andrea, additional, Lohe, Martin R, additional, Loiseau, Annick, additional, Lombardi, Lucia, additional, Francisca López, Maria, additional, Martin, Oliver, additional, Martín, Cristina, additional, Martínez, Lidia, additional, Martin-Gago, Jose Angel, additional, Ignacio Martínez, José, additional, Marzari, Nicola, additional, Mayoral, Álvaro, additional, McManus, John, additional, Melucci, Manuela, additional, Méndez, Javier, additional, Merino, Cesar, additional, Merino, Pablo, additional, Meyer, Andreas P, additional, Miniussi, Elisa, additional, Miseikis, Vaidotas, additional, Mishra, Neeraj, additional, Morandi, Vittorio, additional, Munuera, Carmen, additional, Muñoz, Roberto, additional, Nolan, Hugo, additional, Ortolani, Luca, additional, Ott, Anna K, additional, Palacio, Irene, additional, Palermo, Vincenzo, additional, Parthenios, John, additional, Pasternak, Iwona, additional, Patane, Amalia, additional, Prato, Maurizio, additional, Prevost, Henri, additional, Prudkovskiy, Vladimir, additional, Pugno, Nicola, additional, Rojo, Teófilo, additional, Rossi, Antonio, additional, Ruffieux, Pascal, additional, Samorì, Paolo, additional, Schué, Léonard, additional, Setijadi, Eki, additional, Seyller, Thomas, additional, Speranza, Giorgio, additional, Stampfer, Christoph, additional, Stenger, Ingrid, additional, Strupinski, Wlodek, additional, Svirko, Yuri, additional, Taioli, Simone, additional, Teo, Kenneth B K, additional, Testi, Matteo, additional, Tomarchio, Flavia, additional, Tortello, Mauro, additional, Treossi, Emanuele, additional, Turchanin, Andrey, additional, Vazquez, Ester, additional, Villaro, Elvira, additional, Whelan, Patrick R, additional, Xia, Zhenyuan, additional, Yakimova, Rositza, additional, Yang, Sheng, additional, Yazdi, G Reza, additional, Yim, Chanyoung, additional, Yoon, Duhee, additional, Zhang, Xianghui, additional, Zhuang, Xiaodong, additional, Colombo, Luigi, additional, Ferrari, Andrea C, additional, and Garcia-Hernandez, Mar, additional

Published
2020
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29. Localized optical-quality doping of graphene on silicon waveguides through a TFSA-containing polymer matrix

Author

Misseeuw, Lara, Ciuk, Tymoteusz, Krajewska, Aleksandra, Strupinski, Wlodzimierz, Feigel, Benjamin, Khoder, Mulham, Vandriessche, Isabelle, Van Erps, Jürgen, Van Vlierberghe, Sandra, Thienpont, Hugo, Dubruel, Peter, and Vermeulen, Nathalie

Abstract

The use of graphene in optical and photonic applications has gained much attention in recent years. To maximize the exploitation of graphene's extraordinary optical properties, precise control over its Fermi level (e.g.by means of chemical doping) will be of vital importance. In this work, we show the usage of a versatile p-doping strategy based on the incorporation of bis(trifluoromethanesulfonyl)amide (TFSA), functioning as an active p-dopant molecule, into a poly(2,2,3,3,4,4,5,5-octafluoropentyl methacrylate) (POFPMA) polymer matrix. The TFSA/POFPMA dopant can be utilized both onto large size graphene regionsviaspin coating and on small predefined spatial zones of micrometer dimension by localized inkjet printing. Whereas pure TFSA suffers from a clustered layer deposition combined with environmental instability, the application of the POFPMA polymer matrix yields doping layers revealing superior properties counteracting the existing shortcomings of pure TFSA. A first key finding relates to the optical quality of the dopant layer. We obtain a layer with an extremely low surface roughness (0.4–0.8 nm/25 μm2) while exhibiting very high transparency (absorbance

Published
2018

32. Step-edge-induced resistance anisotropy in quasi-free-standing bilayer chemical vapor deposition graphene on SiC.

Author

Ciuk, Tymoteusz, Cakmakyapan, Semih, Ozbay, Ekmel, Caban, Piotr, Grodecki, Kacper, Krajewska, Aleksandra, Pasternak, Iwona, Szmidt, Jan, and Strupinski, Wlodek

Subjects
*ANISOTROPY, *GRAPHENE, *SILICON carbide, *CHEMICAL vapor deposition, *SCATTERING (Physics)
Abstract

The transport properties of quasi-free-standing (QFS) bilayer graphene on SiC depend on a range of scattering mechanisms. Most of them are isotropic in nature. However, the SiC substrate morphology marked by a distinctive pattern of the terraces gives rise to an anisotropy in graphene's sheet resistance, which may be considered an additional scattering mechanism. At a technological level, the growth-preceding in situ etching of the SiC surface promotes step bunching which results in macro steps ~10 nm in height. In this report, we study the qualitative and quantitative effects of SiC steps edges on the resistance of epitaxial graphene grown by chemical vapor deposition. We experimentally determine the value of step edge resistivity in hydrogen-intercalated QFS-bilayer graphene to be ~190 Ωµm for step height hS = 10 nm and provide proof that it cannot originate from mechanical deformation of graphene but is likely to arise from lowered carrier concentration in the step area. Our results are confronted with the previously reported values of the step edge resistivity in monolayer graphene over SiC atomic steps. In our analysis, we focus on large-scale, statistical properties to foster the scalable technology of industrial graphene for electronics and sensor applications. [ABSTRACT FROM AUTHOR]

Published
2014
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33. Effect of oxidation temperature on the inhomogeneity of chemical composition and density in nanometric SiO2 films grown on 4H-SiC.

Author

Kamiński, Paweł, Budzich, Rafał, Gaca, Jarosław, Michałowski, Paweł Piotr, Kozłowski, Roman, Harmasz, Anna, Ciuk, Tymoteusz, and Płocharski, Janusz

Abstract

State-of-the-art secondary ion mass spectrometry (SIMS), X-ray reflectivity (XRR) and atomic force microscopy (AFM) have been used to determine the effect of oxidation temperature on the inhomogeneity of chemical composition and density in nanometric SiO2 films grown on n-type 4H-SiC by thermal oxidation in dry oxygen. Within the films grown at 1000–1100 °C with thicknesses of 7.6–21.1 nm, we have revealed three regions with various distributions of the Si, O and C concentrations: the transition region, adjacent to the substrate surface, where the O concentration steeply rises and the Si and C concentrations go down, the middle region, where the O, Si and C concentrations are nearly constant, and the near-surface region, adjacent to the outer surface of the oxide film, where the O concentration increases towards the surface. Based on the images of the two-dimensional distributions of the O and C concentrations and the density profiles in the oxide films, we postulate that in the transition and middle regions the density depends on the ratio of the volume of SiOxCy and SiO2 phases. In the near-surface regions, the density is mainly determined by SiO2 porosity. [ABSTRACT FROM AUTHOR]

Published
2021
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36. Localized optical-quality doping of graphene on silicon waveguides through a TFSA-containing polymer matrix

Author

Misseeuw, Lara, primary, Ciuk, Tymoteusz, additional, Krajewska, Aleksandra, additional, Pasternak, Iwona, additional, Strupinski, Wlodek, additional, Feigel, Benjamin, additional, Khoder, Mulham, additional, Vandriessche, Isabelle, additional, Van Erps, Jürgen, additional, Van Vlierberghe, Sandra, additional, Thienpont, Hugo, additional, Dubruel, Peter, additional, and Vermeulen, Nathalie, additional

Published
2018
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43. Optical-quality controllable wet-chemical doping of graphene through a uniform, transparent and low-roughness F4-TCNQ/MEK layer

Author

Misseeuw, Lara, primary, Krajewska, Aleksandra, additional, Pasternak, Iwona, additional, Ciuk, Tymoteusz, additional, Strupinski, Wlodek, additional, Reekmans, Gunter, additional, Adriaensens, Peter, additional, Geldof, Davy, additional, Blockhuys, Frank, additional, Van Vlierberghe, Sandra, additional, Thienpont, Hugo, additional, Dubruel, Peter, additional, and Vermeulen, Nathalie, additional

Published
2016
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45. Termiczne formowanie tytanowych kontaktów omowych do węglika krzemu 4H-SiC.

Author

KWIETNIEWSKI, Norbert, SZARAFIŃSKI, Jakub, SOCHACKI, Mariusz, SZMIDT, Jan, KASZUB, Wawrzyniec, and CIUK, Tymoteusz

Subjects
SURFACE preparation, SILICON carbide, OHMIC contacts, ANNEALING of metals, HYDROGEN
Abstract

Copyright of Przegląd Elektrotechniczny is the property of Przeglad Elektrotechniczny and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Published
2019
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46. Homoepitaksja węglika krzemu dla przyrządów mocy w Sieci Badawczej Łukasiewicz - ITME.

Author

CIUK, Tymoteusz, KASZUB, Wawrzyniec, KOŚCIEWICZ, Kinga, CZOŁAK, Dariusz, DOBROWOLSKI, Artur, JAGIEŁŁO, Jakub, CHAMRYGA, Adrianna, BUDZICH, Rafał, STAŃCZYK, Beata, PRZYBOROWSKA, Krystyna, HARMASZ, Anna, GÓRA, Krzysztof, KOZŁOWSKI, Andrzej, MICHAŁOWSKI, Paweł Piotr, CIEPIELEWSKI, Paweł, JÓŹWIK, Iwona, TEKLIŃSKA, Dominika, TYMICKI, Emil, KOZŁOWSKI, Roman, and KOZUBAL, Michał

Subjects
HOMOEPITAXY, SILICON carbide, RAMAN spectroscopy, DENSITY, TECHNOLOGY
Abstract

Copyright of Przegląd Elektrotechniczny is the property of Przeglad Elektrotechniczny and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Published
2019
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49. Production and processing of graphene and related materials

Author

Backes, Claudia, Abdelkader, Amr M., Alonso, Concepción, Andrieux-Ledier, Amandine, Arenal, Raul, Azpeitia, Jon, Balakrishnan, Nilanthy, Banszerus, Luca, Barjon, Julien, Bartali, Ruben, Bellani, Sebastiano, Berger, Claire, Berger, Reinhard, Ortega, M. M. Bernal, Bernard, Carlo, Beton, Peter H., Beyer, André, Bianco, Alberto, Bøggild, Peter, Bonaccorso, Francesco, Barin, Gabriela Borin, Botas, Cristina, Bueno, Rebeca A., Carriazo, Daniel, Castellanos-Gomez, Andres, Christian, Meganne, Ciesielski, Artur, Ciuk, Tymoteusz, Cole, Matthew T., Coleman, Jonathan, Coletti, Camilla, Crema, Luigi, Cun, Huanyao, Dasler, Daniela, De Fazio, Domenico, Díez, Noel, Drieschner, Simon, Duesberg, Georg S., Fasel, Roman, Feng, Xinliang, Fina, Alberto, Forti, Stiven, Galiotis, Costas, Garberoglio, Giovanni, García, Jorge M., Garrido, Jose Antonio, Gibertini, Marco, Gölzhäuser, Armin, Gómez, Julio, Greber, Thomas, Hauke, Frank, Hemmi, Adrian, Hernandez-Rodriguez, Irene, Hirsch, Andreas, Hodge, Stephen A., Huttel, Yves, Jepsen, Peter U., Jimenez, Ignacio, Kaiser, Ute, Kaplas, Tommi, Kim, HoKwon, Kis, Andras, Papagelis, Konstantinos, Kostarelos, Kostas, Krajewska, Aleksandra, Lee, Kangho, Li, Changfeng, Lipsanen, Harri, Liscio, Andrea, Lohe, Martin R., Loiseau, Annick, Lombardi, Lucia, Francisca López, Maria, Martin, Oliver, Martín, Cristina, Martínez, Lidia, Martin-Gago, Jose Angel, Ignacio Martínez, José, Marzari, Nicola, Mayoral, Álvaro, McManus, John, Melucci, Manuela, Méndez, Javier, Merino, Cesar, Merino, Pablo, Meyer, Andreas P., Miniussi, Elisa, Miseikis, Vaidotas, Mishra, Neeraj, Morandi, Vittorio, Munuera, Carmen, Muñoz, Roberto, Nolan, Hugo, Ortolani, Luca, Ott, Anna K., Palacio, Irene, Palermo, Vincenzo, Parthenios, John, Pasternak, Iwona, Patane, Amalia, Prato, Maurizio, Prevost, Henri, Prudkovskiy, Vladimir, Pugno, Nicola, Rojo, Teófilo, Rossi, Antonio, Ruffieux, Pascal, Samorì, Paolo, Schué, Léonard, Setijadi, Eki, Seyller, Thomas, Speranza, Giorgio, Stampfer, Christoph, Stenger, Ingrid, Strupinski, Wlodek, Svirko, Yuri, Taioli, Simone, Teo, Kenneth B. K., Testi, Matteo, Tomarchio, Flavia, Tortello, Mauro, Treossi, Emanuele, Turchanin, Andrey, Vazquez, Ester, Villaro, Elvira, Whelan, Patrick R., Xia, Zhenyuan, Yakimova, Rositza, Yang, Sheng, Yazdi, G. Reza, Yim, Chanyoung, Yoon, Duhee, Zhang, Xianghui, Zhuang, Xiaodong, Colombo, Luigi, Ferrari, Andrea C., and Garcia-Hernandez, Mar

Subjects
7. Clean energy
Abstract

2D Materials 7(2), 022001 (2020). doi:10.1088/2053-1583/ab1e0a, Published by IOP Publ., Bristol

50. Optical-quality controllable wet-chemical doping of graphene through a uniform, transparent and low-roughness F4-TCNQ/MEK layer

Author

Hugo Thienpont, Nathalie Vermeulen, D. Geldof, Aleksandra Krajewska, Tymoteusz Ciuk, Peter Dubruel, Wlodek Strupinski, Gunter Reekmans, Peter Adriaensens, Sandra Van Vlierberghe, Iwona Pasternak, Lara Renée Misseeuw, Frank Blockhuys, Applied Physics and Photonics, Faculty of Engineering, Brussels Photonics Team, Misseeuw, Lara, Krajewska, Aleksandra, Pasternak, Iwona, Ciuk, Tymoteusz, Strupinski, Wlodek, REEKMANS, Gunter, ADRIAENSENS, Peter, GELDOF, Davy, Blockhuys, Frank, Van Vlierberghe, Sandra, Thienpont, Hugo, Dubruel, Peter, and Vermeulen, Nathalie

Subjects
SOLAR-CELLS, Materials science, Silicon, Band gap, General Chemical Engineering, BAND-GAP, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, Carbon nanotube, 010402 general chemistry, FILMS, 01 natural sciences, law.invention, law, Surface roughness, plasma, Spin coating, Dopant, business.industry, Graphene, DERIVATIVES, Doping, General Chemistry, 021001 nanoscience & nanotechnology, field, 0104 chemical sciences, Chemistry, chemistry, TRANSISTORS, CARBON-NANOTUBE, Optoelectronics, FUNCTIONALIZATION, graphene, wet-chemical doping, F4-TCNQ, MEK, ketones, COMPLEXES, 0210 nano-technology, business
Abstract

Controllable chemical doping of graphene has already proven very useful for electronic applications, but when turning to optical and photonic applications, the additional requirement of having both a high transparency and a low surface roughness has, to our knowledge, not yet been fulfilled by any chemical dopant system reported so far. In this work, a new method that meets for the first time this optical-quality requirement while also providing efficient, controllable doping is presented. The method relies on F4-TCNQ dissolved in methyl ethyl ketone (MEK) yielding a uniform deposition after spin coating because of an extraordinary charge transfer interaction between the F4-TCNQ and MEK molecules. The formed F4-TCNQ/MEK layer exhibits a very high surface quality and optical transparency over the visible-infrared wavelength range between 550 and 1900 nm. By varying the dopant concentration of F4-TCNQ from 2.5 to 40 mg ml(-1) MEK, the doping effect can be controlled between Delta n - + 5.73 x 10(12) cm(-2) and + 1.09 x 10(13) cm(-2) for initially strongly p-type hydrogen- intercalated graphene grown on 6H-silicon-carbide substrates, and between Delta n = + 5.56 x 10(12) cm(-2) and + 1.04 x 10(13) cm(-2) for initially weakly p-type graphene transferred on silicon samples. This is the first time that truly optical-quality chemical doping of graphene is demonstrated, and the obtained doping values exceed those reported before for F4-TCNQ-based graphene doping by as much as 50%. This work was supported by ERC-FP7/2007-2013 grant 336940, EU-FET GRAPHENICS (grant agreement no. 618086), EU-FP7 Graphene Flagship (grant agreement no. 604391), the Polish National Science Centre UMO-2013/09/N/ST5/02481, BELSPO-IAP, VUB-OZR and Methusalem.

Published
2016

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