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Conventional Copper Indium Gallium Di Selenide (CIGS)-based solar cells are more efficient than second-generation technology based on hydrogenated amorphous silicon (a-Si: H) or cadmium telluride (CdTe). So, herein the photovoltaic (PV) performance of CIGS-based solar cells has been investigated numerically using SCAPS-1D solar simulator with different buffer layer and less expensive tin sulfide (Sn2S3) back-surface field (BSF). At first, three buffer layer such as cadmium sulfide (CdS), zinc selenide (ZnSe) and indium-doped zinc sulfide ZnS:In have been simulated with CIGS absorber without BSF due to optimized and non-toxic buffer. Then the optimized structure of Al/FTO/ZnS:In/CIGS/Ni is modified to become Al/FTO/ZnS:In/CIGS/Sn2S3/Ni by adding a Sn2S3 BSF to enhanced efficiency. The detailed analysis have been investigated is the influence of physical properties of each absorber and buffer on photovoltaic parameters including layer thickness, carrier doping concentration, bulk defect density, interface defect density. This study emphasizes investigating the reasons for the actual devices' poor performance and illustrates how each device's might vary open-circuit voltage (VOC), short-circuit current density (JSC), fill factor (FF), power conversion efficiency (PCE), and quantum efficiency (QE). The optimized structure offers outstanding power conversion efficiency (PCE) of 21.83 % with only 0.80 μm thick CIGS absorber. The proposed CIGS-based solar cell performs better than the previously reported conventional designs while also reducing CIGS thickness and cost.

Conventional Copper Indium Gallium Di Selenide (CIGS)-based solar cells are more efficient than second-generation technology based on hydrogenated amorphous silicon (a-Si: H) or cadmium telluride (CdTe). So, herein the photovoltaic (PV) performance of CIGS-based solar cells has been investigated numerically using SCAPS-1D solar simulator with different buffer layer and less expensive tin sulfide (Sn 2 S 3 ) back-surface field (BSF). At first, three buffer layer such as cadmium sulfide (CdS), zinc selenide (ZnSe) and indium-doped zinc sulfide ZnS:In have been simulated with CIGS absorber without BSF due to optimized and non-toxic buffer. Then the optimized structure of Al/FTO/ZnS:In/CIGS/Ni is modified to become Al/FTO/ZnS:In/CIGS/Sn 2 S 3 /Ni by adding a Sn 2 S 3 BSF to enhanced efficiency. The detailed analysis have been investigated is the influence of physical properties of each absorber and buffer on photovoltaic parameters including layer thickness, carrier doping concentration, bulk defect density, interface defect density. This study emphasizes investigating the reasons for the actual devices' poor performance and illustrates how each device's might vary open-circuit voltage (V OC ), short-circuit current density (J SC ), fill factor (FF), power conversion efficiency (PCE), and quantum efficiency (QE). The optimized structure offers outstanding power conversion efficiency (PCE) of 21.83 % with only 0.80 μm thick CIGS absorber. The proposed CIGS-based solar cell performs better than the previously reported conventional designs while also reducing CIGS thickness and cost., Competing Interests: The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper., (© 2023 The Authors.)

Taking into account the absorption spectra of the hybrid-film (i.e., molybdenum (P1), copper indium gallium selenide (CIGS)/CdS/i-ZnO (P2), and AZO/CIGS/CdS/i-ZnO (P3)) layers of CIGS-based solar cells, we investigate the hybrid films of CIGS-based solar cells. P1, P2, and P3 isolated layer scribing is performed using infrared (1064 nm) and ultraviolet (355 nm) laser systems. The effects of different lasers on the P1, P2, and P3 isolated layers are discussed in terms of the scribing width and depth, bottom residuals, and edge debris. Subsequently, through energy-dispersive spectrometry and three-dimensional confocal laser scanning microscopy, we obtain the optimal laser process parameters. The experimental results obtained using nanosecond lasers are similar to those obtained using femto- and picosecond lasers in the literature. [ABSTRACT FROM AUTHOR]