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The authors implanted P atoms at 50 and 140-keV energies with respective fluences of 1 × 10 14 and 2 × 10 14 /cm 2 into diamond thin films synthesized by chemical vapor deposition on the type-Ib diamond substrate formed by high-pressure and high-temperature conditions. The occupational sites of implanted P atoms were determined in each processing stage of P implantation, ion-beam-induced epitaxial crystallization (IBIEC) annealing by 3-MeV-Ne 2 + ion irradiation at 750 ° C, and thermal annealing at 850 ° C in vacuum, by quantitatively comparing the random and channeling yields in Rutherford backscattering (RBS) measurements. In the analysis of RBS spectra, simulated distributions were fitted to the experimentally obtained spectra and we quantitatively identified the occupational sites and ratio of implanted P atoms. In addition, we investigated the diffusion phenomenon of implanted P atoms during annealing processes from the depth profile of scattered He ions. Consequently, the averaged occupational ratio in the substitutional lattice site was stably recorded around 50%. From the depth profile in the RBS spectra, thermal diffusion of implanted P atoms was clearly observed during the last thermal annealing after MeV-IBIEC annealing. We finally discuss the potentials of the MeV-IBIEC irradiation at relatively low temperatures applying to useful and credible annealing methods for electrical activation as well as recovery of damaged crystallinity. [ABSTRACT FROM AUTHOR]

Growth of GeSn films directly on Si substrates is desirable for integrated photonics applications since the absence of an intervening buffer layer simplifies device fabrication. Here, we analyze the microstructure of two GeSn films grown directly on (001) Si by remote plasma-enhanced chemical vapor deposition (RPECVD): a 1000 nm thick film containing 3% Sn and a 600 nm thick, 10% Sn film. Both samples consist of an epitaxial layer with nano twins below a composite layer containing nanocrystalline and amorphous. The epilayer has uniform composition, while the nanocrystalline material has higher levels of Sn than the surrounding amorphous matrix. These two layers are separated by an interface with a distinct, hilly morphology. The transition between the two layers is facilitated by formation of densely populated (111)-coupled nano twins. The 10% Sn sample exhibits a significantly thinner epilayer than the one with 3% Sn. The in-plane lattice mismatch between GeSn and Si induces a quasi-periodic misfit dislocation network along the interface. Film growth initiates at the interface through formation of an atomic-scale interlayer with reduced Sn content, followed by the higher Sn content epitaxial layer. A corrugated surface containing a high density of twins with elevated levels of Sn at the peaks begins forming at a critical thickness. Subsequent epitaxial breakdown at the peaks produces a composite containing high levels of Sn nanocrystalline embedded in lower level of Sn amorphous. The observed microstructure and film evolution provide valuable insight into the growth mechanism that can be used to tune the RPECVD process for improved film quality. [ABSTRACT FROM AUTHOR]

Thin films of amorphous silicon (a-Si) coated on metals such as nickel (Ni) are one of the most promising anode architectures for high-energy-density lithium-ion (Li-ion) batteries. The performance and longevity of batteries with this type of electrode depend on the integrity of the Ni/a–Si interface. The integrity of the a-Si /Ni bonded interface during cycling is critical, but the experimental characterization of interfacial failure of this material system is highly challenging and there is a sparsity of interface strength data in the literature. Here, we describe a laser spallation (LS) technique to characterize the interfacial adhesion strength of Ni/a–Si multilayer films created by chemical vapor deposition (CVD). The LS technique enables the non-contact measurement of the tensile interfacial strength with high precision when compared to conventional methods for characterizing adhesion. Interferometric measurement combined with finite element analysis shows that the Ni/a–Si interface, created via the CVD of a-Si on Ni surfaces can withstand ≈46–72 MPa in tension before failure initiation. To ensure successful and precise characterization of interfacial adhesion strength using LS, we further develop a design criterion for multi-layer samples by analyzing the thin-film mechanics. Our study provides insights into the strength of the Ni/a–Si interface that governs the performance and durability of high-energy-density anodes and offers design guidelines for improving thin-film electrode integrity. [ABSTRACT FROM AUTHOR]

We performed Ge doping of α-Ga2O3 thin films grown on m-plane sapphire substrates using mist chemical vapor deposition. Although the typical growth rate was high at 4 μm/h, the resultant α-Ga2O3 thin films exhibited high crystallinity. We controlled the carrier density in the range of 8.2 × 1016–1.6 × 1019 cm−3 using bis[2-carboxyethylgermanium(IV)]sesquioxide as the Ge source. The highest mobility achieved was 66 cm2 V−1 s−1 at a carrier concentration of 6.3 × 1017 cm−3. Through secondary ion mass spectrometry analysis, a linear relationship between the Ge concentration in the α-Ga2O3 thin films and the molar ratio of Ge to Ga in the source solution was established. The quasi-vertical Schottky barrier diode fabricated using the Ge-doped α-Ga2O3 thin films exhibited an on-resistance of 7.6 mΩ cm2 and a rectification ratio of 1010. These results highlight the good performance of the fabricated device and the significant potential of Ge-doped α-Ga2O3 for power-device applications. [ABSTRACT FROM AUTHOR]

In recent years, inorganic lead-free perovskite materials have garnered attention for their non-toxicity, high carrier mobility, and strong light absorption capabilities, showing promising application prospects in photoelectric sensing. CsCu2I3 perovskite has been mentioned as one of the representatives and as a potential material for short-wavelength optoelectronic devices. This study employs a one-step chemical vapor deposition (CVD) process to fabricate CsCu2I3 thin films, which exhibit a vibrant yellow emission at 560 nm. Ultraviolet photodetectors utilizing CsCu2I3 films demonstrate an exceptional responsivity and a detectivity of 1.43 A/W and 1.15 × 1012 Jones (254 nm, 5 V bias), along with rapid response times (trise ≈ 50 ms, tdecay ≈ 70 ms). Moreover, this work examines the factors affecting device performance, including wavelength, operating voltage, and film thickness. It presents a straightforward, ecofriendly CVD method for producing lead-free perovskite films and optoelectronic devices, which has significant implications for the development of lead-free perovskite-based photoelectric technologies. [ABSTRACT FROM AUTHOR]

Borazine is a well-established precursor molecule for the growth of hexagonal boron nitride (h-BN) via chemical vapor deposition on metal substrates. To understand the formation of the h-BN/Rh(111) moiré from borazine on a molecular level, we investigated the low-temperature adsorption and thermally induced on-surface reaction of borazine on Rh(111) in situ using synchrotron radiation-based high-resolution x-ray photoelectron spectroscopy (XPS), temperature-programmed XPS, and near-edge x-ray absorption fine structure measurements. We find that borazine adsorbs mainly as an intact molecule and have identified a flat-lying adsorption geometry. Borazine multilayers are observed to desorb below 200 K. Starting at about 300 K, dehydrogenation of the remaining borazine and borazine fragments takes place, and disordered boron nitride starts to grow. Above 600 K, the formation of the h-BN sets in. Finally, at 1100 K, the conversion to h-BN is complete. The h-BN formed by deposition and post-annealing was compared to the h-BN grown by an established procedure, proving the successful preparation of the desired two-dimensional material. [ABSTRACT FROM AUTHOR]

As initiated Chemical Vapor Deposition (iCVD) finds increasing application in precision industries like electronics and optics, defect prevention will become critical. While studies of non-ideal morphology exist in the iCVD literature, no studies investigate the role of defects. To address this knowledge gap, we show that the buildup of short-chain polymers or oligomers during normal operation of an iCVD reactor can lead to defects that compromise film integrity. We used atomic force microscopy to show that oligomer aggregates selectively prevented film growth, causing these hole-like defects. X-ray diffraction and optical microscopy demonstrated the crystallinity of the aggregates, pointing to a flat-on lamellar or mono-lamellar structure. To understand the origin of the aggregates, spectroscopic ellipsometry showed that samples exposed to the reactor consistently accrued low-volatility contaminants. X-ray photoelectron spectroscopy revealed material derived from polymerization in the contamination, while scanning electron microscopy showed the presence of defect-causing aggregates. We directly linked oligomeric/polymeric contamination with defect formation by showing an increased defect rate when a contaminant polymer was heated alongside the sample. Most importantly, we showed that starting a deposition at a high sample temperature (e.g., 50 °C) before reducing it to the desired setpoint (e.g., 9 °C) unilaterally prevented defects, providing a simple method to prevent defects with minimal impact on operations. [ABSTRACT FROM AUTHOR]

Due to fascinating physical properties powered by remarkable progress in chemical vapor deposition of high-quality epilayers, diamond thin films attract great attention for fabrication of nitrogen-vacancy-based solid-state spin systems capable of operating in ambient conditions. To date, diamond heteroepitaxy via bias-enhanced nucleation is an unavoidable method for reliable wafer-scale film manufacturing. In this work, we analyze the coalescence phenomena in nitrogen doped, heteroepitaxial diamond epilayers, with a particular focus on their specific role in the annihilation of macroscopic crystal irregularities such as grain boundaries, non-oriented grains, and twinned segments. Here, we also report on the growth mechanism for the "primary" crystal orientation along with a predominant formation of two different types of boundaries highlighting the {011}-type as a main source of the crystal lattice irregularities. [ABSTRACT FROM AUTHOR]

Chemical vapor deposition (CVD) is a crucial technique to prepare high-quality graphene because of its controllability. In the research, we perform a systematic computational fluid dynamics numerical investigation on the effect of gas-phase reaction dynamics on the graphene growth in a horizontal tube CVD reactor. The research results indicate that the gas-phase chemical reactions in the CVD reactor are in a nonequilibrium state, as evidenced by the comparison of species mole fraction distributions during the CVD process and under chemical equilibrium conditions. The effect of gas-phase reaction dynamics on the deposition rate of graphene under different conditions is studied, and our research shows that the main causes of change in graphene growth rates under different conditions are gas-phase reaction dynamics and active species transport. The results of numerical simulation agree well with the experimental phenomena. The research results also indicate that, for methane, the main limiting factor of graphene growth is the surface kinetic reaction rate. Conversely, for active species, the main limiting factor of graphene growth is species transport. Our research suggests that the growth rate of graphene can be regulated from the perspective of the gas reaction mechanism. This method has theoretical guiding significance and can be extended to the preparation of large-area graphene. [ABSTRACT FROM AUTHOR]

In this work, we demonstrate an in situ etch technique for β-Ga2O3 inside a metalorganic chemical vapor deposition (MOCVD) reactor using triethylgallium (TEGa) as the etching agent. At sufficiently high substrate temperatures (Tsub), TEGa is introduced into the MOCVD reactor which undergoes pyrolysis, resulting in the deposition of Ga on the β-Ga2O3 surface. These Ga adatoms react with Ga2O3 to form gallium suboxide (Ga2O), which desorbs from the β-Ga2O3 surface resulting in the etching of the epilayer. MOCVD chamber parameters such as TEGa molar flow rate, substrate temperature, and chamber pressure were shown to be key in controlling the etch rate and surface morphology. A wide range of etch rates from ∼0.3 to 8.5 μm/h is demonstrated by varying the etch parameters. In addition, smooth surface morphology on (010) and (001) β-Ga2O3 substrates is also demonstrated. This new etch technique could enable damage free fabrication of 3D structures like fins and trenches, which are key components in many β-Ga2O3 device structures. [ABSTRACT FROM AUTHOR]

Mn-doped diamond (111) layers were grown by microwave plasma chemical vapor deposition using bis(methylcyclopentadienyl)manganese as a Mn source. The Mn concentration ([Mn]) was intentionally controlled in the range between ∼1 × 1015 and ∼1 × 1017 cm−3 by regulating the Mn/C molar ratio in the gas phase within 0.15%–3.0%. When [Mn] > ∼1 × 1016 cm−3, the step edges of the growing surface changed from straight to a zigzag shape. Using a model based on the classic theory by Cabrera and Vermilyea, we show that this roughening of the step edges resulted from step pinning due to Mn atoms absorbed on the diamond surfaces. [ABSTRACT FROM AUTHOR]

We report on the study of electron transport and band offset across β -Ga 2 O 3 /4H-SiC N–n isotype heterojunction. N-type β -Ga 2 O 3 of thickness 2.7 μ m was grown using low-pressure chemical vapor deposition using germanium (Ge) as the dopant on an n-type 4H-SiC substrate. The grown epilayer having (− 201) orientation was verified through XRD. Temperature-dependent I–V and C–V measurements were performed (50–300 K) to investigate the transport properties across the heterojunction. First, lateral diodes were fabricated on β -Ga 2 O 3 , and from C–V, n-doping was estimated to be 2.3 × 10 17 cm − 3 in the epilayer while the Schottky barrier height was estimated to be 1.75 eV. In top-down I–V sweeps, the reverse current across the heterojunction exhibited marginal dependence on temperature, indicating a possible tunnelling-based transport mechanism, while the forward current exhibited an exponential dependence on both temperature and the applied bias. The band diagram indicated the formation of a two-dimensional electron gas (2DEG) at the hetero-interface, which was indirectly confirmed using C–V measurement and TCAD simulation at low temperatures. From the position of the Fermi level in SiC and band diagram, a conduction band offset of 0.4–0.5 eV was estimated between β -Ga 2 O 3 and 4H-SiC. [ABSTRACT FROM AUTHOR]

To control the growth of layered two-dimensional structures, such as transition metal dichalcogenide materials or heterostructures, understanding the growth mechanism is crucial. Here, we report the synthesis of ultra-thin MoO2 nanoplatelets through the sublimation of MoO3. Rhombus MoO2 nanoplatelets with the P21/c space group were characterized using various microscopic and spectroscopic techniques. Introducing sulfur sources into the chemical vapor deposition system also leads to the formation of monoclinic MoO2 nanoflakes due to the incomplete sulfurization of MoO3. With a gradual increase in the vapor concentration of sulfur, MoO3 undergoes stepwise reduction into MoS2/MoO2 and eventually into MoS2. Additionally, utilizing MoO2 as a precursor for Mo sources enables the formation of monolayer MoS2 single crystals. This work provides an effective approach for growing MoO2 nanoplatelets and elucidates the mechanism behind the stepwise sulfurization of MoO3. [ABSTRACT FROM AUTHOR]

We investigate the sub-bandgap optical absorption (SOA) in 300-nm-thick Al1−xInxN alloys used in cladding layers of edge-emitting laser diodes and distributed Bragg reflectors of vertical-cavity surface-emitting lasers. Al1−xInxN alloys, with indium content x ranging from 0.114 to 0.185, were grown by metal-organic chemical vapor deposition on a c-plane GaN/sapphire template. SOAs on 300-nm-thick thin films were characterized using photothermal deflection spectroscopy (PDS). Thermal emission, such as nonradiative recombination with phonon emission, is the dominant energy relaxation process occurring after SOA in Al1−xInxN alloys. The absorption coefficient of the SOA was estimated to be 0.6–7.0 × 103 cm−1 in these samples by combining PDS and spectroscopic ellipsometry. The drastic increase in the SOA, when x exceeded the lattice-matched composition of the GaN/sapphire template, indicates that impurities, vacancy-type defects, and their complexes with increasing x are possible candidates that result in SOA in Al1−xInxN alloys. [ABSTRACT FROM AUTHOR]

The thermal conductivity (k) of polycrystalline SiC thin films is relevant for thermal management in emerging SiC applications like microelectromechanical and optoelectronic devices. In such films, k can be substantially reduced by microstructure features including grain boundaries, thin film surfaces, and porosity, although these microstructural effects can also be manipulated through thermal annealing. Here, we investigate these effects by using microfabricated suspended devices to measure the thermal conductivities of nine low-pressure chemical vapor deposition SiC films of varying thicknesses (from 120 to 300 nm) and annealing conditions (as-grown and annealed at 950 and 1100 °C for 2 h, and in one case 17 h). Fourier-transform infrared spectroscopy, x-ray diffraction spectra, and density measurements are also used to characterize the effects of annealing on the microstructure of selected samples. Compared to as-deposited films, annealing at 1100 °C typically increases the estimated grain size from 5.5 to 6.6 nm while decreasing the porosity from around 6.5% to practically fully dense. This corresponds to a 34% increase in the measured thin film thermal conductivity near room temperature from 5.8 to 7.8 W/m K. These thermal conductivity measurements show good agreement of better than 3% with fits using a simple theoretical model based on the kinetic theory combined with a Maxwell–Garnett porosity correction. Grain boundary scattering plays the dominant role in reducing the thermal conductivity of these films compared to bulk single-crystal values, while both grain size increase and porosity decrease play important roles in the partial k recovery of the films upon annealing. This work demonstrates the effects of modifying the microstructure and, thus, the thermal conductivity of SiC thin films by thermal annealing. [ABSTRACT FROM AUTHOR]

Developing bifunctional catalysts for overall water splitting with high activity and durability at high current density remains a challenge. In an attempt to overcome this bottleneck, in this work, unique CoNiFe-layered double hydroxide nanoflowers are in situ grown on nickel-iron (NiFe) foam through a corrosive approach and following a chemical vapor deposition process to generate nitrogen-doped carbon nanotubes at the presence of melamine (CoNiFe@NCNTs). The coupling effects between various metal species act a key role in accelerating the reaction kinetics. Moreover, the in situ formed NCNTs also favor promoting electrocatalytic activity and stability. For oxygen evolution reaction it requires low overpotentials of 330 and 341 mV in 1M KOH and 1M KOH + seawater to drive 500 mA cm−2. Moreover, water electrolysis can be operated with CoNiFe@NCNTs as both anode and cathode with small voltages of 1.95 and 1.93 V to achieve 500 mA cm−2 in 1M KOH and 1M KOH + seawater, respectively. [ABSTRACT FROM AUTHOR]

The structure and optical characteristics of thin (∼30 nm) wurtzite AlInN films grown pseudomorphic on free-standing, c-plane GaN substrates are presented. The Al1−xInxN layers are grown by metalorganic chemical vapor deposition, resulting in films with varying In content from x = 0.142 to 0.225. They are measured using atomic force microscopy, x-ray diffraction, reciprocal space mapping, and spectroscopic ellipsometry (SE). The pseudomorphic AlInN layers provide a set where optical properties can be determined without additional variability caused by lattice relaxation, a crucial need for designing devices. They have smooth surfaces (rms < 0.29 nm) with minimum pit areas when the In content is near lattice-matched to GaN. As expected, SE shows that the refractive index increases and the bandgap energy decreases with increased In-content. Plots of bandgap energy vs In content are fitted with a single bowing parameter of 3.19 eV when using bandgap energies for AlN and InN pseudomorphic to GaN, which is lower than previous measurements and closer to theoretical predictions. [ABSTRACT FROM AUTHOR]

In an interconnected high-vacuum illustration system, the surfaces of p-InGaN/GaN heterostructures grown with integrated metalorganic chemical vapor deposition were treated in O2 gas for different times at room temperature and then transferred to another chamber for fabricating ohmic contacts via sputtering Pd/Pt/Au multi-layers. X-ray photoelectron spectroscopy measurements unveil that the proportions of Ga–O of the treated samples significantly increase compared with that of the as-grown sample, indicating that a thin layer of GaOx forms on the p-InGaN/GaN surface after exposing to oxygen or air atmospheres. Meanwhile, the samples exposed to O2 or air were found to have much higher specific contact resistance, i.e., higher by two orders of magnitude than that of the as-grown sample. The specific contact resistance of the as-grown sample was derived as 9.3 × 10−5 Ω cm2 using the circular transmission line measurement. Furthermore, the Schottky barrier height of the samples was determined from the measured I–V curves with the thermionic field emission model and was revealed to be closely related to surface treatments. Despite the fact that the insulating layer of GaOx was as thin as 1.2–1.4 Å for the samples exposed to oxygen at room temperature, it can act as an extra barrier layer causing significant increase in the specific contact resistance via blocking the tunneling of carriers. Therefore, the effective removal of p-InGaN surface oxide plays a vital role in preparing good ohmic contacts. [ABSTRACT FROM AUTHOR]

For the wafer-scale fabrication of diamond devices, the growth of diamond substrates by heteroepitaxial chemical vapor deposition is the most promising option currently available. However, the transfer of growth and also structuring processes from small homoepitaxial to larger heteroepitaxial samples is not straightforward and requires adaptation. In this study, we present an approach for the fabrication of functional microstructures including pyramids and mesas as well as more complex structures with hollow centers. The associated methods were previously demonstrated by homoepitaxial growth and are now evaluated on heteroepitaxially grown diamond films. After optimizing the growth procedures to ensure a sufficient quality of the bare diamond substrates, precursor structures for overgrowth were fabricated by e-beam lithography and plasma etching. In the overgrowth of nanopillars, a truncated pyramidal shape was achieved. The characterization with scanning electron microscopy revealed the growth of higher-index facets. Nevertheless, photoluminescence spectroscopy reveals localized doping on the sides of the microstructures. In addition, optically detected magnetic resonance reaches a contrast of 6 % of one preferred nitrogen vacancy orientation per facet and a transverse relaxation time T 2 ∗ of 96 ns. [ABSTRACT FROM AUTHOR]

Cubic boron nitride (c-BN), with a small 1.4% lattice mismatch with diamond, presents a heterostructure with multiple opportunities for electronic device applications. However, the formation of c-BN/diamond heterostructures has been limited by the tendency to form hexagonal BN at the interface. In this study, c-BN has been deposited on free standing polycrystalline and single crystal boron-doped diamond substrates via electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD), employing fluorine chemistry. In situ x-ray photoelectron spectroscopy (XPS) is used to characterize the nucleation and growth of boron nitride (BN) films as a function of hydrogen gas flow rates during deposition. The PECVD growth rate of BN was found to increase with increased hydrogen gas flow. In the absence of hydrogen gas flow, the BN layer was reduced in thickness or etched. The XPS results show that an excess of hydrogen gas significantly increases the percent of sp2 bonding, characteristic of hexagonal BN (h-BN), particularly during initial layer growth. Reducing the hydrogen flow, such that hydrogen gas is the limiting reactant, minimizes the sp2 bonding during the nucleation of BN. TEM results indicate the partial coverage of the diamond with thin epitaxial islands of c-BN. The limited hydrogen reaction is found to be a favorable growth environment for c-BN on boron-doped diamond. [ABSTRACT FROM AUTHOR]

β-phase gallium oxide (Ga2O3) is an emerging ultrawide bandgap (UWBG) semiconductor with a bandgap energy of ∼ 4.8 eV and a predicted high critical electric field strength of ∼8 MV/cm, enabling promising applications in next generation high power electronics and deep ultraviolet optoelectronics. The advantages of Ga2O3 also stem from its availability of single crystal bulk native substrates synthesized from melt, and its well-controllable n-type doping from both bulk growth and thin film epitaxy. Among several thin film growth methods, metalorganic chemical vapor deposition (MOCVD) has been demonstrated as an enabling technology for developing high-quality epitaxy of Ga2O3 thin films, (AlxGa1−x)2O3 alloys, and heterostructures along various crystal orientations and with different phases. This tutorial summarizes the recent progresses in the epitaxial growth of β-Ga2O3 thin films via different growth methods, with a focus on the growth of Ga2O3 and its compositional alloys by MOCVD. The challenges for the epitaxial development of β-Ga2O3 are discussed, along with the opportunities of future works to enhance the state-of-the-art device performance based on this emerging UWBG semiconductor material system. [ABSTRACT FROM AUTHOR]

Nucleation is important in processing of good quality diamond crystals and textured thin films by microwave plasma enhanced chemical vapor deposition (MPECVD) for applications in quantum devices and systems. Bias-enhanced nucleation (BEN) is one approach for diamond nucleation in situ during MPECVD. However, the mechanism of diamond nucleation by BEN is not well understood. This paper describes results on the nucleation of diamond within a carbon film upon application of electric field during the BEN-facilitated MPECVD process. The nature of the diamond film and nuclei formed is characterized by SEM (scanning electron microscopy), Raman spectroscopy, and high-resolution transmission electron microscopy (HRTEM). The HRTEM images and associated diffraction patterns of the nucleation layer show that the diamond nuclei are formed within the carbon film close to the Si (100) substrate surface under the influence of microwaves and electric fields that lead to formation of the textured diamond film and crystal upon further growth. These results are expected to develop diamond films of optimum quality containing a nitrogen-vacancy center for application in quantum systems. [ABSTRACT FROM AUTHOR]

It is established that 2D magnetic materials are the ideal platform for building up modern-day electronic and spintronic devices. The popular ways to achieve 2D magnetic materials are mechanical exfoliation and chemical vapor deposition. However, the direct chemical synthesis route of such magnetic 2D materials on a large scale is relatively unexplored. This article reports an easy and cost-effective facile chemical synthesis with a proper capping agent and magnetic study of free-standing 2D Cr2S3 nanosheets and Cr2S3 nanoparticles within the temperature range of 2–300 K under the magnetic field of up to 5 T. Although few magnetic results on 2D Cr2S3 are available in the literature, there is enough scope to work for an in-depth understanding of the magnetic aspects of this 2D material. Here, ferrimagnetic ordering with a sufficiently high coercivity of up to 0.139 T at 2 K along with a tendency to the saturation in magnetization down to a certain temperature limit is observed. Contrary to the strong antiferromagnetic coupling with a Néel temperature, as observed by previous researchers, is also observed for this chemically synthesized 2D Cr2S3 nanosheets. A transition temperature of 117 K is observed for the Cr2S3 nanosheets, whereas for Cr2S3 nanoparticles, a transition temperature of 101.7 K is observed with negligible coercivity. This facile synthesis technique may be applied to achieve other non-van der Waals type 2D magnetic materials. These kinds of non-van der Waals type 2D magnets will be useful to modern-day spintronic devices. [ABSTRACT FROM AUTHOR]

High-quality monolithic Ge-on-Si is sought for CMOS-compatible optoelectronic devices. We examine the structural characteristics of Ge-on-Si grown by the aspect ratio trapping (ART) method on a SiO2/Si(001) template in pre-patterned holes. Transmission electron microscopy and surface topography analysis revealed high-quality Ge islands overgrown from the ART holes in SiO2. The superior crystal quality of Ge ART growth was also confirmed by comparing x-ray diffraction (XRD) data of Ge ART and Ge planar epilayer samples. The XRD and micro-Raman data additionally show a small residual strain in the islands which vanishes by reducing the hole diameter from 280 nm to 180 nm, while leading to only a minor increase in the crystallographic inclinations of the Ge islands from 0.34 deg to 0.54 deg. With finite element method simulations, we find that the small residual strain in Ge originates during the cool-down from growth to room temperature because of thermal expansion coefficient mismatch between Ge and SiO2. A tensile force develops along the [001] axis of the Ge pillar whose faster shrinkage to the room temperature volume is restricted by the oversized surface island. [ABSTRACT FROM AUTHOR]

To develop high-temperature structural materials with broadband microwave transmission ability used for high-speed aircraft radome, a sandwich-structured silicon nitride (Si 3 N 4) ceramic consisting of porous core and dense shell is designed based on CST simulation, which helps to obtain the optimized structural and dielectric properties. After that, its near-net-shape preparation strategy is presented by a controllable combined process including gel-casting (GC), polymer infiltration and pyrolysis (PIP), and chemical vapor deposition (CVD). The mechanical and electromagnetic performances were studied. The results show that the optimally-structured sandwich Si 3 N 4 processes a flexural strength of 216.5 MPa and a microwave transmissivity of 80 % in 2–13.4 GHz, which are obviously higher than that of traditional Si 3 N 4 ceramics. Besides, this sandwich-structured Si 3 N 4 ceramics also shows excellent dielectric and mechanical stabilities after a high-temperature oxidization at 1600 °C for 2 h in air atmosphere. Our prepared Si 3 N 4 ceramics achieves excellent mechanical strength, high microwave transmissivity, and good high temperature stability, indicating a great application potential as high-speed aircraft radome materials. [ABSTRACT FROM AUTHOR]

Both, aluminum doped zinc oxide (AZO) and vertically aligned carbon nanotubes (VACNT) have outstanding properties and promising applications in the future, however, there is little information in the scientific literature on whether this is feasible. In this study, we investigated the effects of catalyst layer deposition parameters and the synthesis parameters by using a simple and cost-effective dip coating method to form alumina support layer and iron and cobalt bimetal catalyst layer on the AZO surface thereafter performing synthesis via catalytic chemical vapor deposition technique at 650 °C. In order to gain useful information about the structure of the VACNTs, several parameters were varied during both catalyst layer preparation (e.g. catalyst ink concentration) and CCVD synthesis (e.g. water vapor gas feed, the presence of hydrogen gas). The resulting samples were investigated by scanning electron microscopy, transmission electron microscopy and Raman spectroscopy. The results indicated that the length and structure of CNTs were strongly affected by the catalyst ink concentration and water vapor. [ABSTRACT FROM AUTHOR]

Graphene and its derivatives are widely used in the field of energy conversion and management due to their excellent physical and chemical properties. In this paper, ultra-thin graphite film (GF) with thickness of 100–150 nm prepared by chemical vapor deposition was transferred to oxygen plasma-treated polyimide (PI) substrate as flexible heating film. The electrothermal and photothermal properties of GF on PI substrates with different treatment time were studied. The experimental results show that the PI substrate pretreated by oxygen plasma can change the surface morphology of GF, increase its electrical conductivity and light absorption capacity, and significantly improve the electrothermal and photothermal properties of GF heater. Under the low applied voltage of 5 V (power density of 0.81 W cm−2), the surface temperature of GF on 40 min plasma-treated PI substrate can rise to 250 °C, which is nearly 50 °C higher than that of GF on untreated PI substrate. When 100 nm thick commercial multilayer graphene film (MLG) is used, plasma-treated PI substrate can increase the electric heating temperature of MLG by 70 °C. In terms of photothermal performance, the surface temperature of GF on 50 min plasma-treated PI substrate can reach 73 °C under one Sun irradiation, which is 8 °C higher than that on untreated substrate. The experimental results are in good agreement with the simulation research. Our strategy has important implications for the development of efficient and energy-saving graphene/graphite-based heating films for advanced electrothermal and photothermal conversion devices. [ABSTRACT FROM AUTHOR]

Many different processes have been developed to grow graphene film to protect metals. These processes are primarily based on chemical vapour deposition and are challenging to scale. In this paper, we have attempted to grow the reduced graphene oxide (rGO)-like film using the natural resin 'shellac' as a precursor through the simple process of dip coating of shellac varnish and annealing of coated substrates in a reducing atmosphere. X-ray diffraction (XRD) analysis and Raman spectroscopy were used to establish the rGO phases grown in the coating. The corrosion studies of rGO films grown on cold-rolled interstitial-free steel are investigated with different loadings of shellac in the varnish solution and subsequent heat treatments. Scanning electron probe micro-analysis was done to do elemental analysis, and potentiometric studies were done to investigate the corrosion behaviour of the coatings. The structure–property correlation of the film has established the corrosion mechanism using different microscopy techniques. [ABSTRACT FROM AUTHOR]

This study aims to optimize the performance of silicon nitride (Si3N4) ceramic bearings in high-temperature and heavy-duty environments and to address the issues of insufficient lubrication and heat generation in vacuum environments. To this end, we prepared diamond and MoS2-TiN composite films on silicon nitride ceramic substrates using a hot-wire chemical vapor deposition system and a physical vapor deposition system. The experimental results show that increasing the deposition time of the diamond films can significantly improve their hardness and elastic modulus, enhance the bonding of the films with the substrate, reduce the friction coefficient, and increase the thermal conductivity. Furthermore, by appropriately reducing the sputtering power of the MoS2 film, we can effectively minimize damage to the diamond film and further enhance the overall performance of the composite film. This study offers valuable insights for addressing lubrication and heat dissipation challenges in vacuum environments. [ABSTRACT FROM AUTHOR]

Diamond films were prepared on silicon nitride and zirconia ceramic substrates using hot filament chemical vapor deposition (HFCVD). The surface morphology, friction, and wear properties of the diamond films prepared with different methane concentrations (2%, 4%, and 6%) were compared using scanning electron microscopy, Raman spectroscopy, X-ray diffraction, and friction and wear testing machines. The results showed that, with an increase in the methane concentration, the diamond particles gradually changed from micro- to nanodiamonds, and the grain size first increased and then decreased. The diamond films on silicon nitride substrates were of excellent quality, with good wear resistance, strong adhesion, and wear rates of 2.857 × 10−8 mm−3•m−1•N−1, 5.151 × 10−8 mm−3•m−1•N−1, and 1.334 × 10−7 mm−3•m−1•N−1, respectively. The diamond films on zirconia substrates had more impurities on the surface, higher internal stress, poorer wear resistance, and weaker adhesion, with wear rates of 3.789 × 10−8 mm−3•m−1•N−1, 5.899 × 10−8 mm−3•m−1•N−1, and 2.074 × 10−7 mm−3•m−1•N−1, respectively. Hence, the deposition of diamond films on ceramic substrates significantly reduced the friction coefficient, and the performance of diamond films on silicon nitride substrates was excellent. [ABSTRACT FROM AUTHOR]

Iron‐nitrogen‐carbon (Fe‐N‐C) single‐atom catalysts are promising sustainable alternatives to the costly and scarce platinum (Pt) to catalyze the oxygen reduction reactions (ORR) at the cathode of proton exchange membrane fuel cells (PEMFCs). However, Fe‐N‐C cathodes for PEMFC are made thicker than Pt/C ones, in order to compensate for the lower intrinsic ORR activity and site density of Fe‐N‐C materials. The thick electrodes are bound with mass transport issues that limit their performance at high current densities, especially in H2/air PEMFCs. Practical Fe‐N‐C electrodes must combine high intrinsic ORR activity, high site density, and fast mass transport. Herein, it has achieved an improved combination of these properties with a Fe‐N‐C catalyst prepared via a two‐step synthesis approach, constructing first a porous zinc‐nitrogen‐carbon (Zn‐N‐C) substrate, followed by transmetallating Zn by Fe via chemical vapor deposition. A cathode comprising this Fe‐N‐C catalyst has exhibited a maximum power density of 0.53 W cm−2 in H2/air PEMFC at 80 °C. The improved power density is associated with the hierarchical porosity of the Zn‐N‐C substrate of this work, which is achieved by epitaxial growth of ZIF‐8 onto g‐C3N4, leading to a micro‐mesoporous substrate. [ABSTRACT FROM AUTHOR]

Boron cluster sheets are two-dimensional boron atom-based formations called borophene. They are similar to the two-dimensional sheet known as graphene, which is composed of carbon atoms arranged in a hexagonal lattice. The unique electrical, mechanical, and thermal properties of borophene make it a sought-after substance for a variety of uses, such as catalysis, energy storage, and electronics. There are two ways to manufacture borophene: chemical vapor deposition and molecular beam epitaxy. Vertex-edge valency-based topological descriptors are a great example of a molecular descriptor that provides information on the connection of atoms in a molecule. These descriptions are based on the notion that a node's value in a molecular network is the sum of the valency of those atoms that are directly connected to that node. In this article, we discussed some novel vertex-edge (ve) and edge-vertex (ev) topological descriptors and found their formulations for the boron cluster or borophene sheets. Also, we show the numerical and graphical comparison of these descriptors in this article. [ABSTRACT FROM AUTHOR]

Electrochemical sensors offer promising prospects for real–time pollutant monitoring. In this study, copper oxide–dispersed graphitic carbon nanofibers (CuO−CNFs) grown via chemical vapour deposition were employed as a robust platform for detecting a variety of environmental pollutants. This array–based sensor adeptly identifies three different classes of analytes, i. e., antibiotics (chloramphenicol (CP) and tylosin tartrate (TT)), heavy metals (cadmium (Cd) and lead (Pb)), and pesticides (quinalphos (QP) and imidacloprid (IP)). Electron collection is facilitated by a glassy carbon electrode, while various physico–electrochemical methods delve into the properties of CuO−CNFs. The CuO−CNF–modified GCE array rapidly discerns (<15 sec) a broad linear range: 1–20 ppm for CP, 1–13.33 ppm for TT, 0.66–11.66 ppm for Cd, 20–33.33 ppm for Pb, 1.6–11.6 ppm for QP, and 5–25 ppm for IP, boasting quantification limits of 1.0, 1.0, 0.66, 20.0, 1.6, and 5.0 ppm for CP, TT, Cd, Pb, QP, and IP, respectively. Notably, this sensor achieves simultaneous identification of mixed analytes, including CP and TT, Cd and Pb, and QP and IP, within real tap water. Furthermore, the electrochemical sensor exhibits robustness; heightened sensitivity, selectivity, and stability; a swift response; and impressive reproducibility in detecting CP, TT, Cd, Pb, QP, and IP within aqueous samples. Consequently, this array–based electrochemical sensor has emerged as a rapid and simultaneous detection tool for diverse pollutant residues in surface and groundwater samples. [ABSTRACT FROM AUTHOR]

This study explores the impact of hydrogen flow as a carrier gas on silicon oxycarbide thin films produced via hot wire chemical vapor deposition (HWCVD) using tetraethyl orthosilicate as a precursor. Systematically varying the hydrogen flow rates, the influence on thin film composition, microstructure, and optical properties is investigated. Employing diverse characterization techniques, such as X‐ray diffraction, field‐emission scanning electron microscopy (FE‐SEM), energy‐dispersive X‐ray spectroscopy, Fourier‐transform infrared (FTIR), X‐ray photoelectron spectroscopy (XPS), ellipsometry, and photoluminescence (PL) spectroscopy, it is revealed that there is a correlation between hydrogen flow rate and thin film elemental composition. Higher hydrogen flow rates result in increased silicon content and reduced contributions of oxygen and carbon. FE‐SEM images show agglomerates with improved homogeneity at higher flow rates. FTIR spectra highlight distinctive vibrational modes, including Si–H bonds. XPS confirms the emergence of Si–H bonds at elevated hydrogen flow rates. Ellipsometry indicates increased thickness and refractive index. PL spectra exhibit a broadband across the visible spectrum, influenced by hydrogen‐related defects and electronic transitions. This study provides findings for optimizing HWCVD parameters to tailor thin films for specific applications, emphasizing the important role of hydrogen flow as a carrier gas. [ABSTRACT FROM AUTHOR]

Thermoelectric gas sensor (THGS) devices with catalysts and Si0.8Ge0.2 thin films of different boron doping levels of 1018, 1019, and 1020 cm−3 were fabricated, and their transport properties are investigated. SiGe films were deposited on Si3N4/SiO2 multilayers on Si substrates using low-pressure chemical vapor deposition (LPCVD) and thermally annealed at 1050 °C. The Seebeck coefficients of the SiGe films were increased after thermal annealing, ranging from 191 to 275 μV/K at temperatures of 74 to 468 °C in air, and reaching the highest power factor of 6.78 × 10−4 W/mK2 at 468 °C. The thermal conductivity of the SiGe films varied from 2.4 to 3.0 W/mK at 25 °C. The THGS detection performance was tested for the H2 gas in air from 0.01 to 1.0%, and compared to the thermoelectric properties of the SiGe films. The high-temperature annealing treatment process was successful in enhancing the thermoelectric performance of both the SiGe films and sensor devices, achieving the best THGS performance with the sensor device fabricated from the annealed SiGe film with 1018 cm−3 boron-doped Si0.8Ge0.2. [ABSTRACT FROM AUTHOR]

Two-dimensional transition metal dichalcogenides (2D-TMDs) possess appropriate bandgaps and interact via van der Waals (vdW) forces between layers, effectively overcoming lattice compatibility challenges inherent in traditional heterojunctions. This property facilitates the creation of heterojunctions with customizable bandgap alignments. However, the prevailing method for creating heterojunctions with 2D-TMDs relies on the low-efficiency technique of mechanical exfoliation. Sb2Te3, recognized as a notable p-type semiconductor, emerges as a versatile component for constructing diverse vertical p–n heterostructures with 2D-TMDs. This study presents the successful large-scale deposition of 2D Sb2Te3 onto inert mica substrates, providing valuable insights into the integration of Sb2Te3 with 2D-TMDs to form heterostructures. Building upon this initial advancement, a precise epitaxial growth method for Sb2Te3 on pre-existing WS2 surfaces on SiO2/Si substrates is achieved through a two-step chemical vapor deposition process, resulting in the formation of Sb2Te3/WS2 heterojunctions. Finally, the development of 2D Sb2Te3/WS2 optoelectronic devices is accomplished, showing rapid response times, with a rise/decay time of 305 μs/503 μs, respectively. [ABSTRACT FROM AUTHOR]

Co-condensation of mixed SiGe nanoclusters and impingement of SiGe nanoclusters on a Si substrate were applied using molecular dynamics (MD) simulation in this study to mimic the fast epitaxial growth of SiGe/Si heterostructures under mesoplasma chemical vapor deposition (CVD) conditions. The condensation dynamics and properties of the SiGe nanoclusters during the simulations were investigated first, and then the impingement of transient SiGe nanoclusters on both Si smooth and trench substrate surfaces under varying conditions was studied theoretically. The results show that the mixed nanoclusters as precursors demonstrate potential for enhancing epitaxial SiGe film growth at a high growth rate, owing to their loosely bound atomic structures and high mobility on the substrate surface. By varying cluster sizes and substrate temperatures, this study also reveals that smaller clusters and higher substrate temperatures contribute to faster structural ordering and smoother surface morphologies. Furthermore, the formed layers display a consistent SiGe composition, closely aligning with nominal values, and the cluster-assisted deposition method achieves the epitaxial bridging of heterostructures during cluster impingement, highlighting its additional distinctive characteristics. The implications of this work make it clear that the mechanism of fast alloyed epitaxial film growth by cluster-assisted mesoplasma CVD is critical for extending it as a versatile platform for synthesizing various epitaxial films. [ABSTRACT FROM AUTHOR]

Transition metal dichalcogenides (TMDs), particularly monolayer TMDs with direct bandgap properties, are key to advancing optoelectronic device technology. WSe2 stands out due to its adjustable carrier transport, making it a prime candidate for optoelectronic applications. This study explores monolayer WSe2 synthesis via H2-assisted CVD, focusing on how carrier gas flow rate affects WSe2 quality. A comprehensive characterization of monolayer WSe2 was conducted using OM (optical microscope), Raman spectroscopy, PL spectroscopy, AFM, SEM, XPS, HRTEM, and XRD. It was found that H2 incorporation and flow rate critically influence WSe2's growth and structural integrity, with low flow rates favoring precursor concentration for product formation and high rates causing disintegration of existing structures. This research accentuates the significance of fine-tuning the carrier gas flow rate for optimizing monolayer WSe2 synthesis, offering insights for fabricating monolayer TMDs like WS2, MoSe2, and MoS2, and facilitating their broader integration into optoelectronic devices. [ABSTRACT FROM AUTHOR]

This paper describes the process of producing chemiresistors based on hybrid nanostructures obtained from graphene and conducting polymers. The technology of graphene presumed the following: dispersion and support stabilization based on the chemical vapor deposition technique; transfer of the graphene to the substrate by spin-coating of polymethyl methacrylate; and thermal treatment and electrochemical delamination. For the process at T = 950 °C, a better settlement of the grains was noticed, with the formation of layers predominantly characterized by peaks and not by depressions. The technology for obtaining hybrid nanostructures from graphene and conducting polymers was drop-casting, with solutions of Poly(3-hexylthiophene (P3HT) and Poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-bithiophene] (F8T2). In the case of F8T2, compared to P3HT, a 10 times larger dimension of grain size and about 7 times larger distances between the peak clusters were noticed. To generate chemiresistors from graphene–polymer structures, an ink-jet printer was used, and the metallization was made with commercial copper ink for printed electronics, leading to a structure of a resistor with an active surface of about 1 cm2. Experimental calibration curves were plotted for both sensing structures, for a domain of CH4 of up to 1000 ppm concentration in air. A linearity of the curve for the low concentration of CH4 was noticed for the graphene structure with F8T2, presenting a sensitivity of about 6 times higher compared with the graphene structure with P3HT, which makes the sensing structure of graphene with F8T2 more feasible and reliable for the medical application of irritable bowel syndrome evaluation. [ABSTRACT FROM AUTHOR]

The chemical vapor deposition of silicon on a patterned silicon substrate leads to the formation of 3D microcrystals, which, due to their inclined top facets and high aspect ratio, produce a light‐trapping effect enhancing the optical absorption in the near‐infrared (NIR). In this work, it is demonstrated that Si microcrystals can form the building blocks of a new class of NIR sensitive photodetectors operating in a linear or avalanche regime. Microcrystal‐based devices are designed by coupling a 2D kinetic‐growth model with a Poisson drift‐diffusion solver and fabricated by combining electron beam lithography and low‐energy plasma‐enhanced chemical vapor deposition (LEPECVD). The optoelectronic properties of microcrystal‐based p–i–n photodiodes are investigated both theoretically and experimentally by means of finite‐difference time‐domain (FDTD) simulations and responsivity measurements. At 1000 nm wavelength, the responsivity of microcrystal‐based devices is six times higher than that of an equivalent mesa diode. Moreover, the photocurrent gains of Si microcrystals operating as an avalanche photodiode (APD), at the same wavelength, reaches 2 × 104 demonstrating the potentialities of substrate patterning, combined with epitaxial growth, for amplified photodetection applications. [ABSTRACT FROM AUTHOR]

Graphene-based hybrids such as carbon nanotube/graphene nanosheet (CNT/GNS), carbon nanofiber/graphene nanosheet (CNF/GNS), and CNF-CNT/GNS have attracted extensive attention in energy-related applications due to their excellent properties. The selective synthesis of GNS-based hybrids usually relies on the precise design of metal catalysts and multiple tedious processes. Here, a facile one-step synthesis of GNS-based hybrids was successfully performed by chemical vapor deposition (CVD) on waste bio-shell derived catalysts without the addition of extra metal components, and GNS-based hybrids were selectively synthesized through the hydration and dehydration (H-D) treatment of catalysts. When eggshells were calcined at high temperature, the obtained E-CaO catalyst only synthesized GNSs. After E-CaO was treated by the H-D method, the obtained E-CaO-H-1 catalyst grew CNF/GNS. E-CaO-H-2 catalyst was further prepared by the H-D treatment of E-CaO-H-1, which produced CNF-CNT/GNS. Multiple characterizations of catalysts demonstrated that the high-temperature calcination of eggshells led to the aggregation of CaO and incorporation of Fe into CaO lattices, and thus only GNSs were synthesized on CaO. However, after the H-D treatment of E-CaO, the Fe element was released from CaO lattices and the surface area of CaO enhanced with the decrease of particle size, leading to the dispersion of Fe oxides on the CaO surface, and Fe particles were subsequently formed during the CVD synthesis, which synthesized CNFs on GNS. Further, with the size reduction of Fe particles after the second H-D treatment of the catalyst, smaller Fe particles facilitated the CNT growth, leading to the production of CNF-CNT/GNS. Similarly, the catalysts formed by calcination of other bio-shells (oyster shells, shrimp shells, and crab shells) only synthesized GNSs, whereas these catalysts after H-D treatment produced CNF-CNT/GNS with enhanced carbon yields. This study offers a new method for utilizing the metal species in waste bio-shells for the facile production of structurally tunable GNS-based hybrid materials. [ABSTRACT FROM AUTHOR]

Iron oxide (Fe 2 O 3) structures with various morphologies are synthesized by aerosol-assisted chemical vapor deposition (AACVD) method. The structures are formed reproducibly by tuning different AACVD synthesis parameters, including temperatures, solvents, and samples' position in the reaction chamber. The properties of these structures are characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS). Results demonstrate the formation of six types of crystalline Fe 2 O 3 structures - flattened pyramids (fPy), pyramids (Py), porous pyramids (pPy), sheets (Sh), bricks (Br), and quasi-spherical particles (qsP). The formation of these structures is mainly connected with the use of acetone or acetone/ethanol mixture as solvents and their effect on boosting the influence of the temperature or sample's position, respectively, on the properties of the structures. The gas sensing tests of the structures with higher aspect ratios or porosity (pPy, Py, fPy, and Sh) showed responses to various gases (acetone, ethanol, toluene, carbon monoxide, hydrogen, methane, ammonia, and nitrous oxide), reporting maximum sensitivity and selectivity to acetone and ethanol. The best results recorded are for the porous pyramids which show sensitivities of 5.1 % ppm−1 and 3.9 % ppm−1 (in the range of 10–40 ppm) to acetone and ethanol, respectively. [ABSTRACT FROM AUTHOR]

Graphite substrate, as one of metal-organic chemical vapor deposition (MOCVD) equipment, often fails due to corrosion and powder loss during service. SiC is an ideal protective coating on graphite substrate surfaces due to its excellent properties. Currently, the preparation of SiC coating on large-size graphite substrates by chemical vapor deposition (CVD) in batches is extensively concerned. The coating was affected by various deposition processes during deposition due to the complexity of CVD. The deposition process of CVD needed to be optimized for batch preparation of large-size graphite plate/SiC coating. However, the temperature field and airflow field distribution inside the CVD equipment and the variation of SiC deposition mass fraction were challenging to obtain by instrumental measurement in the experiments. Herein, the optimization of the CVD process was guided by using Computational Fluid Dynamics (CFD) simulation. Five deposition processes, such as graphite plate placement, diameter, deposition temperature, reaction gas flow, and graphite plate rotational speed, were selected for the investigation. The simulation results were validated by CVD experiments. Optimal process parameters for the batch preparation of large-size graphite plate/SiC coating by CVD were obtained. Guidance for future batch production of coating on a large-size substrate by CVD was provided. [ABSTRACT FROM AUTHOR]

A model for the relationship between the healing time of the scratched diamond-like carbon (DLC) film and the localized corrosion incubation period of metal was established. Based on model calculations combined with experimental results, the scratched DLC film on 13Cr stainless steel was able to heal within 10–16h in NaCl solution with an adsorbent-type corrosion inhibitor. However, the localized corrosion incubation time was 30–40h. Healing of the scratched DLC film can be completed before localized corrosion occurs. This model provides a theoretical reference for the scratch-repassivation of inert films in corrosion inhibitors solutions. [ABSTRACT FROM AUTHOR]

A transfer-free graphene with high magnetoresistance (MR) and air stability has been synthesized using nickel-catalyzed atmospheric pressure chemical vapor deposition. The Raman spectrum and Raman mapping reveal the monolayer structure of the transfer-free graphene, which has low defect density, high uniformity, and high coverage (>90%). The temperature-dependent (from 5 to 300 K) current–voltage (I–V) and resistance measurements are performed, showing the semiconductor properties of the transfer-free graphene. Moreover, the MR of the transfer-free graphene has been measured over a wide temperature range (5–300 K) under a magnetic field of 0 to 1 T. As a result of the Lorentz force dominating above 30 K, the transfer-free graphene exhibits positive MR values, reaching ∼8.7% at 300 K under a magnetic field (1 Tesla). On the other hand, MR values are negative below 30 K due to the predominance of the weak localization effect. Furthermore, the temperature-dependent MR values of transfer-free graphene are almost identical with and without a vacuum annealing process, indicating that there are low density of defects and impurities after graphene fabrication processes so as to apply in air-stable sensor applications. This study opens avenues to develop 2D nanomaterial-based sensors for commercial applications in future devices. [ABSTRACT FROM AUTHOR]

In recent years, spatial atomic layer deposition (SALD) has gained significant attention for its remarkable capability to accelerate ALD growth by several orders of magnitude compared to conventional ALD, all while operating at atmospheric pressure. Nevertheless, the persistent challenge of inadvertent contributions from chemical vapor deposition (CVD) in SALD processes continues to impede control over film homogeneity, and properties. This research underscores the often-overlooked influence of diffusion coefficients and important geometric parameters on the close-proximity SALD growth patterns. We introduce comprehensive physical models complemented by finite element method simulations for fluid dynamics to elucidate SALD growth kinetics across diverse scenarios. Our experimental findings, in alignment with theoretical models, reveal distinctive growth rate trends in ZnO and SnO2 films as a function of the deposition gap. These trends are ascribed to precursor diffusion effects within the SALD system. Notably, a reduced deposition gap proves advantageous for both diffusive and low-volatility bulky precursors, minimizing CVD contributions while enhancing precursor chemisorption kinetics. However, in cases involving highly diffusive precursors, a deposition gap of less than 100 μ m becomes imperative, posing technical challenges for large-scale applications. This can be ameliorated by strategically adjusting the separation distance between reactive gas outlets to mitigate CVD contributions, which in turn leads to a longer deposition time. Furthermore, we discuss the consequential impact on material properties and propose a strategy to optimize the injection head to control the ALD/CVD growth mode. [ABSTRACT FROM AUTHOR]

2D magnetic materials with distinct mechanical properties are of great importance for flexible spintronics. However, synthesizing 2D magnets with atomic thickness is challenging and their mechanical properties remain largely unexplored. Here, the growth of a ferrimagnetic 2D Cr9Se13 with anomalous elasticity is reported by an aged‐precursor‐assisted method. The obtained 2D Cr9Se13 exhibits an out‐of‐plane ferrimagnetic order with a coercivity larger than those of conventional magnetic materials. Noteworthy, it presents decent breaking strength and a Young's modulus of 52 ± 8 GPa that is among the smallest of the 2D family. This exceptional elasticity is attributed to the unique internal voids in Cr9Se13, as evidenced by the formed edge dislocations under strain. This work not only offers a facile method to synthesize 2D magnets but also develops avenues for obtaining 2D materials with desired mechanical properties, paving the way for future flexible spintronics. [ABSTRACT FROM AUTHOR]

Chemical vapor deposition (CVD) method was performed to grow carbon nanotubes (CNTs) on oxidized carbon fiber (CF). First, CF was oxidized by a simple and gentle way to increase the number of active groups and the optimal treatment time was determined. Then, effects of catalyst concentration and growth time on morphologies and loading amount of CNTs, the properties of CF/CNTs reinforcements, and the interlayer properties of CF/CNTs composites were explored. When the catalyst concentration and growth time were controlled at a reasonable level, CNTs can be uniformly grown on the CF surface. The interlaminar shear strength (ILSS) was characterized and the fracture surfaces of CF/CNTs composites were observed. The results demonstrated that when the catalyst precursor was kept at 0.05 mol/L and the growth time was controlled at 10 min, CNTs had the best strength effect and the ILSS increased by 30.25% compared to that of composites without CNTs. The fracture surface showed that CNTs can penetrate the matrix at the interface and enhance the interface through mechanical interlocking effect. The CNTs‐induced interphase allows the stress inside the composites to propagate continuously between resin and fibers, thereby heightening the load carrying capacity. Highlights: A simple and gentle way was performed to activate CF without strength reduction.The influence mechanism of various parameters was revealed in detail.The mechanism of CNTs enhancing the interface was revealed. [ABSTRACT FROM AUTHOR]

Engineering the spectral response of materials in infrared (IR) wavelength range can enable effective radiative cooling. Current configurations of IR emitters usually adopt complicated photonic designs and engineered structures because pure/singular materials such as dielectrics and polymers can hardly realize broadband and spectrally selective emissivity simultaneously. Herein, we propose single-layer silicon oxynitride (SiON) coatings with visible transparency and outstanding broadband spectral emissivity of 0.8–0.9 in the wavelength range of 8–14 μm. The single layered composite coating has a thickness below 2 μm, and its mid-IR broadband absorption characteristics can be tuned by adjusting the chemical intermixing of SiO2 and SiN as well as proportion of the Si–O and Si–N bonds during the physical and chemical vapor deposition processes, respectively. When deposited on solar reflective substrate, the composite coating with highest selective emissivity of 0.9 shows a promising net cooling power of ≥ 120 W m−2, when the ambient temperature is 27 °C. In an outdoor experiment, the selective emitter exhibits 4.5–5 °C lower temperature when compared to the ambient temperature inside the chamber, thus achieving the sub-ambient daytime cooling. Therefore, absorption bandwidth extension of single material provides a feasible cooling solution for many applications, including solar cells, and building and automobile windows. [ABSTRACT FROM AUTHOR]

Over the past few decades, chemical vapor deposition (CVD) of [2.2]paracyclophanes has captured significant attention as an emergent technology, producing conformal, chemically pure, and pinhole‐free coatings for biomedical and industrial applications. Compelling examples range from functional CVD polymers to tailored nanostructures. In this work, the unique functional properties of polymers derived from [2.2]paracyclophanes are connected with emergent applications. Special attention is given to the function‐property relationships in the areas of electronic materials, biomaterials, and separation materials. A particular focus is to highlight the versatility of CVD polymerization to process these polymers. [ABSTRACT FROM AUTHOR]