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1. Challenges in QCD matter physics --The scientific programme of the Compressed Baryonic Matter experiment at FAIR

Author

V. Jakovlev, R. Talukdar, Alberica Toia, V.M. Golovatyuk, P. Ivanov, Abhijit Bhattacharyya, M. Kohn, Yu. Onishchuk, M. Tanha, Suman Sau, E. Friske, L. Kumar, A. Roy, Valerica Baban, Yaping Wang, V. Blinov, D. Svirida, Pradip Kumar Sahu, D. Dementiev, A. Gomez Ramirez, M. Petris, Ming Shao, D. Blau, Yu. P. Tsyupa, A. Rost, D. P. Mahapatra, Y. F. Ryabov, D. Wielanek, Anju Bhasin, C. Lara, Saikat Biswas, Shusu Shi, E. P. Akishina, F. Seck, V. Jain, Hongfang Chen, O. Malyatina, B. Komkov, I. Carevic, V. Baublis, Raghunath Sahoo, D. Normanov, Tetyana Galatyuk, S. Amar-Youcef, Cristian Andrei, Yu. I. Bocharov, A. Vorobiev, M. Strikhanov, Y. Leifels, O. Petukhov, A. Petrovici, Dezso Varga, Oana Ristea, W. Verhoeven, J. Sánchez Rosado, Victor Golovtsov, S. Belogurov, E. Kryshen, M. Dey, Johannes Lehrbach, Y. P. Viyogi, A. V. Kazantsev, A. Himmi, M. Anđelić, Oleg Bezshyyko, Cheng Li, A. Raportirenko, Xu Cai, C. Kreidl, Daniela Bartos, T. Balog, Volker Lindenstruth, A. Chaus, M. Mohisin Khan, Mate Csanad, J. Pluta, A. Senger, Matthias Balzer, Christoph Blume, H. Appelshäuser, Di Jiang, B. Kämpfer, A. Lymanets, I. Berceanu, S. Gorbunov, S. Sarangi, V. Pospíšil, N. Heine, A. Veshikov, Yuanjing Li, V. Kushpil, Ch. Klein-Bösing, I. Selyuzhenkov, S. Razin, Guofeng Song, D. Belyakov, G. Berezin, V. Kyva, Andrei Ionut Herghelegiu, Heiko Engel, K. Schmidt, V. Klochkov, Alla Maevskaya, P.-A. Loizeau, L. Golinka-Bezshyyko, V.A. Karnaukhov, J. Bendarouach, C. Xiang, A.D. Sheremetiev, V. F. Chepurnov, Hr Schmidt, Zbigniew Sosin, M. Singla, I. Momot, O. Andreeva, I. Alexandrov, R. N. Singaraju, S. Avdeev, Evgeny Alexandrov, R. Płaneta, Gennady Ososkov, D. Hutter, A. Reinefeld, C.J. Schmidt, Andrei Dorokhov, Vikram Patel, K.-H. Becker, N. Kurepin, E. Lebedeva, C. P. Singh, Y. K. Sun, K. Jaaskelainen, Andras Szabo, J. Rożynek, Sanjeev Singh Sambyal, V. S. Negi, Krzysztof Piasecki, W. F. J. Müller, M. Baznat, N. Miftakhov, Feng Liu, N. Ahmad, L. Skoda, G. D. Kekelidze, Vladimir Ivanov, Krzysztof Kasinski, Xi-Wei Wang, D. Miskowiec, Serguei Volkov, Sudhir Raniwala, I. Tsakov, A. Nedosekin, Peter Senger, T. Barczyk, S. Dubnichka, C. Ristea, N.G. Tuturas, E. V. Atkin, D. Karmanov, W. Zabolotny, Tatiana Karavicheva, Subhasis Samanta, Yu.V. Zanevsky, S. Bähr, O. Batenkov, M. Petrovici, B. Milanovic, Muhammad Farooq, R. Karabowicz, I. Vassiliev, P. Staszel, Sheng Dong, Udo Wolfgang Kebschull, P. Koczon, Goutam Gangopadhyay, P. Zumbruch, Vladimir Plujko, Y. Berdnikov, Shue He, Volodymyr Vovchenko, V. Mialkovski, W. Zipper, T. Bus, O. Tarassenkova, S. K. Sahu, V. Militsija, Yu. Zaitsev, C. Müntz, S. K. Ghosh, Sushanta Tripathy, E. Rostchin, V. Shumikhin, I. Fröhlich, I. Panasenko, A. Laso Garcia, L. Dutka, Yu.S. Anisimov, B. Linnik, T. Tischler, A. Ivashkin, R. Kotte, Calin Besliu, T. Akishina, Rashmi Raniwala, Sheng Zheng, K. Koch, J. Kunkel, A. Shabunov, E. Lobanova, Wojciech Kucewicz, T. Breitner, M. Al-Turany, R. P. Adak, Claudiu Cornel Schiaua, S. Masciocchi, Zhongbao Yin, Xinjie Huang, Jens Wiechula, Nu Xu, I. Kisel, Christian Sturm, T. Mahmoud, V. Kalinin, A. Abuhoza, Mohd Danish Azmi, P. Zrelov, Jing Zhou, M. Dželalija, C. Deveaux, M. Goffe, Ke-Jun Wu, S. Strohauer, S. Bashir, D. Argintaru, B. Heß, A. Turowiecki, M. B. Golubeva, F. Ahmad, S. Gläßel, V. Plotnikov, Manuel Penschuck, Supriya Das, Grzegorz Kasprowicz, Vladislav Manko, O. Vasylyev, D. Kresan, L. Kudin, Yu. V. Gusakov, Dongdong Hu, Vladimir Nikulin, M. Ivanov, D. Gottschalk, Karl-Heinz Kampert, A. Kolosova, G. Caragheorgheopol, K. Dey, K. Mikhailov, Anand Kumar Dubey, J. Scholten, S. P. D. Figuli, T. Blank, Ajit Kumar, Vladimir Peshekhonov, Igor Pshenichnov, E. Badura, Michael Deveaux, I. Rostovtseva, M. Kiš, Jürgen Becker, Evgeny Karpechev, B. W. Kolb, Valery Pugatch, Xiaofeng Luo, I. Som, E. Ovcharenko, F.F. Guber, H. Büsching, H. Cherif, N. R. Panda, Zubayer Ahammed, R. Najman, Fouad Rami, M. Gumiński, J. Pieper, Jerzy Gajda, G. Kozlov, H. Jahan, A. Drozd, V. Butuzov, Joachim Stroth, I. K. Yoo, Thomas Janson, M. Petri, R. Holzmann, D. Finogeev, S. Golovnya, Ping Cao, E. Malankin, Buddhadeb Bhattacharjee, L. Meder, Junfeng Yang, Lei Zhao, C. Simon, S. Kuznetsov, I. Valin, M. Zyzak, H. Hartmann, T. Satława, Yi Wang, Anton Andronic, Daicui Zhou, Zebo Tang, M. Prokudin, V. Saveliev, Qiyan Li, I. M. Deppner, Mahitosh Mandal, F. Uhlig, J. A. Lucio Martínez, J. Book, L. Mik, S. Schatral, S. K. Pal, A. Petrovskiy, J. Pietraszko, B. Debnath, E. Usenko, O. Svoboda, Gy. Wolf, V.V. Elsha, J. Lehnert, Pengfei Lyu, S. Seddiki, Peter Fischer, Huanhuan Fan, D. Doering, J. Frühauf, C. Wendisch, Yu Zhang, V. Kozlov, P. Tlustý, Piotr Otfinowski, N. Baranova, Sergey Kiselev, J. Rautenberg, Dmitry Mal'kevich, I. Kadenko, I. Lobanov, Mikhail Zhalov, A. Rodriguez Rodriguez, D. Emschermann, Vikas Singhal, Pavel Akishin, M. Bach, P. Kravtsov, X. Zhu, C. Nandi, I. Korolko, Rongxing Yang, E. Nandy, D. Ivanischev, Anil Prakash, A. Semennikov, I. E. Yushmanov, S. Parzhitskiy, M. Vznuzdaev, A. Khvorostukhin, A. Kiryakov, Soma Mukherjee, LuYao Chen, M. Pugach, Piotr Kmon, J. Gebelein, V. Kleipa, C. Bergmann, Kai Schweda, S. Rabtsun, Victor Ivanov, Tivadar Kiss, M. Dreschmann, I. G. Alekseev, A. K. Kurilkin, A. Volochniuk, E. Krebs, A. Lebedev, V. Kramarenko, N. Topil'skaya, S. Das, S. Lebedev, S. Querchfeld, Madan M. Aggarwal, N.I. Zamiatin, Amrendra K. Singh, Swagata Mandal, A. Khanzadeev, C. Simons, Gilles Claus, U. Frankenfeld, V.V. Ivanov, A. Chernogorov, Pascal Dillenseger, V. Dobyrn, Z. Dubnichkova, S. Löchner, Bhartendu K. Singh, S. Ahmad, Rishat Sultanov, J. Kallunkathariyil, A. Wieloch, T. Matulewicz, R. Berendes, A. Shabanov, Saniya Khan, V. Friese, Anik Gupta, L. Kochenda, M. Kirejczyk, Pavel Kisel, Amlan Chakrabarti, Ashwini Kumar, Michal Koziel, A. Berdnikov, A. Sadovsky, T. O. Ablyazimov, S. Mahajan, M. Merkin, Robert Szczygiel, C. Pauly, Krzysztof Poźniak, F. Roether, Alexey Kurepin, Alexander Voronin, A. Bubak, Nikolai Shumeiko, Nicolas Winckler, A. V. Kryanev, Andrey Reshetin, A. Simakov, Sukalyan Chattopadhyay, E. M. Ilgenfritz, B. Sikora, Jihye Song, J. Hehner, Zhi Deng, M. Irfan, J. Saini, S. A. Lone, L. Naumann, D. Eschweiler, A. M. Marin Garcia, P. Kähler, O. Derenovskaya, A.P. Ierusalimov, Alexandru Jipa, K. Agarwal, T. Tolyhi, H. Malygina, Xingming Fan, Amalia Pop, Dmitry Golubkov, E. M. Verbitskaya, L. Radulescu, Ryszard S. Romaniuk, D. Pfeifer, Yifei Zhang, Rajarshi Ray, V. Zryuev, M. Teklishyn, M. Träger, S. Morozov, H. Flemming, A. Oancea, A. Wilms, P. Ghosh, A. Grzeszczuk, V. Mikhaylov, Patrick Simon Reichelt, Ankhi Roy, Sanguk Won, Vladimir Samsonov, T. Esanu, V. Akishina, D.V. Peshekhonov, A.I. Zinchenko, M. Żoładź, Xin Li, I. Sibiryak, J. Wüstenfeld, Aleksey Voronin, M. Korolev, Guangming Huang, A. Kugler, E. Kaptur, J. Michel, J. Tarasiuk, Manjit Kaur, A. Bychkov, F. Lemke, Bekhzod S Yuldashev, T. K. Bhattacharyya, S. Gorokhov, F. Schintke, P. Klaus, Adrian Byszuk, Ionel Lazanu, Dong Wang, Michael Dürr, M. Krieger, H. Deppe, Sibaji Raha, O. Sander, S. Kowalski, K. Wiśniewski, Alexander Malakhov, I. Filozova, Shengqin Feng, M. Calin, S. Reinecke, V. Kucher, M. Weber, A. Kovalchuk, V. Petráček, M. Adamczyk, K.K. Gudima, Johannes Peter Wessels, P. Sitzmann, J. Markert, V. K. Eremin, Alexandru Bercuci, Marc Winter, Mateusz Baszczyk, M.I. Ciobanu, E. Bao, M. Kuc, U. Brüning, O. V. Fateev, Piotr Maj, J. de Cuveland, M. G. Târzilă, Pavel Larionov, R. Averbeck, Jianping Cheng, Jacek Rauza, C. E. Muñoz Castillo, N. D'Ascenzo, O. Bertini, Wendi Deng, G. Kretschmar, I. Skwira-Chalot, W. Niebur, K. Oh, V. P. Ladygin, T. Morhardt, C. Höhne, M. G. Wiebusch, Partha Pratim Bhaduri, Dong Han, Oleg Karavichev, N. Herrmann, R. Visinka, F. Constantin, C. García Chávez, J. Brzychczyk, Sidharth Kumar Prasad, D. Soyk, V. V. Kirakosyan, W. Koenig, D. Bertini, Z. Majka, F. Khasanov, J. Eschke, P. Gryboś, E. Lavrik, V. Cătănescu, K. Siwek-Wilczyńska, P. K. Kurilkin, J.M. Heuser, Adeel Akram, Yu. Murin, Alexander Akindinov, A. K. Bhati, I. Kres, J. Förtsch, Rafal Kleczek, Jiajun Zheng, S. Manz, T. K. Nayak, Institut Pluridisciplinaire Hubert Curien (IPHC), Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS), CBM, Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA), and Université de Strasbourg (UNISTRA)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)

Subjects
J/psi(3100), Phase transition, matter: interaction, Hadron, Nuclear Theory, hypernucleus, 7. Clean energy, 01 natural sciences, Critical point (thermodynamics), transport theory, hadron: gas, Nuclear Experiment, neutron star, QCD matter, Brookhaven RHIC Coll, quark gluon: plasma, Physics, Large Hadron Collider, fireball, elliptic flow, strong interaction, Observable, heavy ion, CERN LHC Coll, QCD matter, Quark-Gluon-Plasma (QGP), QCD phase diagram, strong interaction, hadronic matter, partonic matte, heavy-ion, 2-4.9 GeV/nucleon, Nuclear and High Energy Physics, Particle physics, CBM, charmonium, [PHYS.NUCL]Physics [physics]/Nuclear Theory [nucl-th], Strong interaction, review, nonperturbative, [PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex], symmetry: chiral, quantum chromodynamics: critical phenomena, strangeness, 0103 physical sciences, density: high, Darmstadt GSI FAIR, structure, 010306 general physics, equation of state, quantum chromodynamics: matter, 010308 nuclear & particles physics, High Energy Physics::Phenomenology, nucleus, temperature: high, baryon, Neutron star, Automatic Keywords, HADES, charm
Abstract

International audience; Substantial experimental and theoretical efforts worldwide are devoted to explore the phase diagram of strongly interacting matter. At LHC and top RHIC energies, QCD matter is studied at very high temperatures and nearly vanishing net-baryon densities. There is evidence that a Quark-Gluon-Plasma (QGP) was created at experiments at RHIC and LHC. The transition from the QGP back to the hadron gas is found to be a smooth cross over. For larger net-baryon densities and lower temperatures, it is expected that the QCD phase diagram exhibits a rich structure, such as a first-order phase transition between hadronic and partonic matter which terminates in a critical point, or exotic phases like quarkyonic matter. The discovery of these landmarks would be a breakthrough in our understanding of the strong interaction and is therefore in the focus of various high-energy heavy-ion research programs. The Compressed Baryonic Matter (CBM) experiment at FAIR will play a unique role in the exploration of the QCD phase diagram in the region of high net-baryon densities, because it is designed to run at unprecedented interaction rates. High-rate operation is the key prerequisite for high-precision measurements of multi-differential observables and of rare diagnostic probes which are sensitive to the dense phase of the nuclear fireball. The goal of the CBM experiment at SIS100 ( $\sqrt{s_{NN}}=$ 2.7--4.9 GeV) is to discover fundamental properties of QCD matter: the phase structure at large baryon-chemical potentials ( $\mu_B > 500$ MeV), effects of chiral symmetry, and the equation of state at high density as it is expected to occur in the core of neutron stars. In this article, we review the motivation for and the physics programme of CBM, including activities before the start of data taking in 2024, in the context of the worldwide efforts to explore high-density QCD matter.

Published
2017

2. CBM Collaboration

Author

T. Ablyazimov, A. Abuhoza, R. Adak, J. Adamczewski-Musch, M. Adamczyk, M.M. Aggarwal, Z. Ahammed, F. Ahmad, N. Ahmad, S. Ahmad, A. Akindinov, P. Akishin, E. Akishina, T. Akishina, V. Akishina, M. Al-Turany, E. Alexandrov, I. Alexandrov, S. Amar-Youcef, M. Anđelić, O. Andreeva, C. Andrei, A. Andronic, Yu. Anisimov, H. Appelshäuser, A. Arend, D. Argintaru, E. Atkin, S. Avdeev, R. Averbeck, M.D. Azmi, V. Baban, M. Bach, E. Badura, S. Baginyan, T. Balle, T. Balog, S. Bandyopadhyay, P. Banerjee, N. Baranova, T. Barczyk, D. Bartoş, S. Bashir, Z. Basrak, M. Baszczyk, O. Batenkov, V. Baublis, C. Baumann, M. Baznat, K.-H. Becker, T. Bel, S. Belogurov, J. Bendarouach, I. Berceanu, A. Bercuci, E. Berdermann, A. Berdnikov, Y. Berdnikov, R. Berendes, C. Bergmann, D. Bertini, O. Bertini, C. Beşliu, O. Bezshyyko, P.P. Bhaduri, A. Bhasin, A.K. Bhati, B. Bhattacharjee, A. Bhattacharyya, T.K. Bhattacharyya, S. Biswas, D. Blau, C. Blume, Yu. Bocharov, S. Böttger, M. Borysova, T. Breitner, U. Brüning, J. Brzychczyk, A. Bubak, H. Büsching, A. Bychkov, A. Byszuk, Xu Cai, M. Cãlin, Ping Cao, R. Čaplar, G. Caragheorgheopol, I. Carević, V. Cătănescu, A. Chakrabarti, S. Chatterji, Sanatan Chattopadhyay, Subhasis Chattopadhyay, Hongfang Chen, Jianping Cheng, V. Chepurnov, S. Chernenko, A. Chernogorov, Kyung-Eon Choi, M.I. Ciobanu, G. Claus, F. Constantin, V. Covlea, M. Csanád, N. D'Ascenzo, S. Das, K. Davkov, V. Davkov, J. de Cuveland, B. Debnath, D. Dementiev, Zhi Deng, H. Deppe, I. Deppner, O. Derenovskaya, C.A. Deveaux, M. Deveaux, K. Dey, M. Dey, P. Dillenseger, V. Dobyrn, D. Doering, A. Dorokhov, A. Drozd, A.K. Dubey, S. Dubnichka, A. Dubnichkova, M. Dürr, W. Dulinski, L. Dutka, M. Dželalija, D. Emschermann, H. Engel, V. Eremin, T. Eşanu, J. Eschke, D. Eschweiler, Jongsik Eum, Huanhuan Fan, O. Fateev, I. Filozova, D. Finogeev, P. Fischer, H. Flemming, U. Frankenfeld, V. Friese, E. Friske, I. Fröhlich, J. Frühauf, Á. Fülöp, J. Gajda, T. Galatyuk, A. Galkin, V. Galkin, G. Gangopadhyay, C. García Chávez, I. Gašparić, J. Gebelein, P. Ghosh, S.K. Ghosh, M. Goffe, L. Golinka-Bezshyyko, V. Golovatyuk, S. Golovnya, V. Golovtsov, M. Golubeva, D. Golubkov, A. Gómez Ramírez, S. Gorbunov, S. Gorokhov, D. Gottschalk, P. Gryboś, A. Grzeszczuk, F. Guber, K. Gudima, A. Gupta, Yu. Gusakov, A. Haldar, S. Haldar, H. Hartmann, J. Hehner, K. Heidel, N. Heine, E. Hellbär, A. Herghelegiu, N. Herrmann, B. Heß, J.M. Heuser, A. Himmi, C. Höhne, R. Holzmann, Guangming Huang, Xinjie Huang, J. Hutsch, D. Hutter, E. Iakovleva, A. Ierusalimov, E.-M. Ilgenfritz, M. Irfan, M. Ivanov, Valery Ivanov, Victor Ivanov, Vladimir Ivanov, A. Ivashkin, K. Jaaskelainen, H. Jahan, V. Jain, V. Jakovlev, T. Janson, A. Jipa, I. Kadenko, B. Kämpfer, S. Kalcher, V. Kalinin, K.-H. Kampert, Tae Im Kang, E. Kaptur, R. Karabowicz, O. Karavichev, T. Karavicheva, D. Karmanov, V. Karnaukhov, E. Karpechev, K. Kasiński, G. Kasprowicz, M. Kaur, A. Kazantsev, U. Kebschull, G. Kekelidze, M.M. Khan, S.A. Khan, A. Khanzadeev, F. Khasanov, A. Khvorostukhin, V. Kirakosyan, M. Kirejczyk, A. Kiryakov, M. Kiš, I. Kisel, P. Kisel, S. Kiselev, A. Kiss, T. Kiss, P. Klaus, R. Kłeczek, Ch. Klein-Bösing, V. Kleipa, P. Kmon, K. Koch, L. Kochenda, P. Koczoń, W. König, M. Kohn, B.W. Kolb, A. Kolosova, B. Komkov, J.M. Kopfer, M. Korolev, I. Korolko, R. Kotte, A. Kotynia, A. Kovalchuk, S. Kowalski, M. Koziel, G. Kozlov, P. Kravtsov, E. Krebs, C. Kreidl, D. Kresan, G. Kretschmar, M. Kretz, M. Krieger, E. Kryshen, W. Kucewicz, L. Kudin, A. Kugler, I. Kulakov, J. Kunkel, A. Kurepin, P. Kurilkin, V. Kushpil, V. Kyva, V. Ladygin, C. Lara, P. Larionov, A. Laso Garcia, E. Lavrik, I. Lazanu, A. Lebedev, S. Lebedev, E. Lebedeva, J. Lehnert, J. Lehrbach, F. Lemke, Cheng Li, Jin Li, Qiyan Li, Yuanjing Li, Yulan Li, V. Lindenstruth, S. Linev, B. Linnik, E. Litvinenko, Feng Liu, I. Lobanov, E. Lobanova, S. Löchner, P.-A. Loizeau, J.A. Lucio Martínez, A. Lymanets, A. Maevskaya, S. Mahajan, D.P. Mahapatra, T. Mahmoud, P. Maj, Z. Majka, A. Malakhov, E. Malankin, D. Malkevich, O. Malyatina, H. Malygina, S. Mandal, V. Manko, S. Manz, V. Marin, A.M. Marin Garcia, J. Markert, S. Masciocchi, T. Matulewicz, M. Merkin, V. Mialkovski, J. Michel, N. Miftakhov, K. Mikhailov, V. Mikhaylov, B. Milanović, V. Militsija, M.F. Mir, D. Miskowiec, T. Morhardt, W.F.J. Müller, C. Müntz, Yu. Murin, R. Najman, L. Naumann, T. Nayak, A. Nedosekin, B. Neumann, W. Niebur, V. Nikulin, D. Normanov, M. Nüssle, A. Oancea, Kunsu Oh, Y. Onishchuk, D. Osipov, G. Ososkov, D. Ossetski, P. Otfinowski, E. Ovcharenko, S. Pal, I. Panasenko, N.R. Panda, S. Parzhitskiy, C. Pauly, Haiping Peng, I. Peric, D. Peshekhonov, V. Peshekhonov, V. Petráček, M. Petriş, A. Petrovici, M. Petrovici, A. Petrovskiy, O. Petukhov, K. Piasecki, J. Pieper, J. Pietraszko, R. Płaneta, E. Plekhanov, V. Plotnikov, V. Plujko, J. Pluta, V. Poliakov, P. Polozov, A. Pop, V. Popov, V. Pospisil, B.V.K.S. Potukuchi, J. Pouryamout, K. Poźniak, A. Prakash, M. Prokudin, I. Pshenichnov, M. Pugach, V. Pugatch, S. Querchfeld, L. Radulescu, S. Raha, W. Raja, F. Rami, R. Raniwala, S. Raniwala, A. Raportirenko, J. Rautenberg, J. Rauza, R. Ray, S. Razin, P. Reichelt, S. Reinecke, A. Reshetin, C. Ristea, O. Ristea, F. Roether, R. Romaniuk, A. Rost, E. Rostchin, I. Rostovtseva, A. Roy, J. Rożynek, Yu. Ryabov, V. Rykalin, A. Sadovsky, S. Sadovsky, R. Sahoo, P.K. Sahu, J. Saini, S. Samanta, S.S. Sambyal, V. Samsonov, J. Sánchez Rosado, S. Sau, V. Saveliev, S. Schatral, C. Schiaua, C.J. Schmidt, H.R. Schmidt, K. Schmidt, K. Schweda, A. Scurtu, F. Seck, S. Seddiki, I. Selyuzhenkov, A. Semennikov, A. Senger, P. Senger, A. Shabunov, Ming Shao, M.K. Sharma, N. Shumeiko, V. Shumikhin, B. Sikora, A. Simakov, C. Simon, C. Simons, R.N. Singaraju, A.K. Singh, B.K. Singh, C.P. Singh, V. Singhal, K. Siwek-Wilczyńska, L. Škoda, I. Skwira-Chalot, I. Som, Jihye Song, I. Sorokin, Z. Sosin, D. Soyk, P. Staszel, A. Stavinskiy, E. Stephan, D. Storozhyk, M. Strikhanov, S. Strohauer, J. Stroth, C. Sturm, R. Sultanov, Yongjie Sun, O. Svoboda, R. Szczygieł, R. Talukdar, Zebo Tang, M. Tanha, J. Tarasiuk, O. Tarassenkova, M.-G. Târzilă, V. Tiflov, T. Tischler, P. Tlustý, A. Toia, T. Tolyhi, N. Topil'skaya, C. Trageser, P. Trivedy, I. Tsakov, Yu. Tsyupa, A. Turowiecki, F. Uhlig, E. Usenko, I. Valin, T. Vasiliev, I. Vassiliev, E. Verbitskaya, W. Verhoeven, A. Veshikov, R. Visinka, Y.P. Viyogi, S. Volkov, Yu. Volkov, A. Vorobiev, A. Voronin, V. Vovchenko, E. Vznuzdaev, M. Vznuzdaev, Dong Wang, Yaping Wang, Wang Yi, C. Wendisch, J.P. Wessels, M. Wiebusch, J. Wiechula, B. Wiedemann, D. Wielanek, A. Wieloch, N. Winckler, M. Winter, K. Wiśniewski, D. Wohlfeld, Gy. Wolf, Won Sanguk, J. Wüstenfeld, Changzhou Xiang, Xu Nu, Jun-Gyu Yi, Zhongbao Yin, In-Kwon Yoo, Qian Yue, B. Yuldashev, I. Yushmanov, W. Zabołotny, Yu. Zaitsev, Yu. Zanevsky, M. Zhalov, Ya Peng Zhang, Yifei Zhang, Daicui Zhou, Xianglei Zhu, A. Zinchenko, W. Zipper, M. Żoładź, P. Zrelov, V. Zryuev, P. Zumbruch, and M. Zyzak

Subjects
Nuclear and High Energy Physics
Published
2014

3. High-voltage pixel detectors in commercial CMOS technologies for ATLAS, CLIC and Mu3e experiments

Author

Fabian Hügging, D. Fougeron, P. Pangaud, Theresa Obermann, F. Bompard, Simon Feigl, Timon Heim, Ivan Peric, A.-K. Perrevoort, C. Kreidl, Hans Krüger, Jian Liu, H. Augustin, Moritz Kiehn, Hong Hanh Nguyen, Niklaus Berger, Antonio Miucci, P. Breugnon, Maurice Garcia-Sciveres, F. Lütticke, Alexandre Rozanov, Peter Fischer, Dominik Dannheim, Mathieu Benoit, Marlon Barbero, André Schöning, Dirk Wiedner, Alexander Dierlamm, Carlos Marinas, J. C. Clemens, Benjamin Schwenker, Daniel Münstermann, Lingxin Meng, Alessandro La Rosa, and Malte Backhaus

Subjects
Physics, Nuclear and High Energy Physics, Large Hadron Collider, Spectrometer, Pixel, 010308 nuclear & particles physics, business.industry, Detector, 7. Clean energy, 01 natural sciences, Particle detector, Semiconductor detector, CMOS, 0103 physical sciences, 010306 general physics, business, Instrumentation, Image resolution, Computer hardware
Abstract

High-voltage particle detectors in commercial CMOS technologies are a detector family that allows implementation of low-cost, thin and radiation-tolerant detectors with a high time resolution. In the R/D phase of the development, a radiation tolerance of 10 15 n eq / cm 2, nearly 100% detection efficiency and a spatial resolution of about 3 μm were demonstrated. Since 2011 the HV detectors have first applications: the technology is presently the main option for the pixel detector of the planned Mu3e experiment at PSI (Switzerland). Several prototype sensors have been designed in a standard 180 nm HV CMOS process and successfully tested. Thanks to its high radiation tolerance, the HV detectors are also seen at CERN as a promising alternative to the standard options for ATLAS upgrade and CLIC. In order to test the concept, within ATLAS upgrade R/D, we are currently exploring an active pixel detector demonstrator HV2FEI4; also implemented in the 180 nm HV process.

Published
2013

4. The CBM Collaboration

Author

A. Abuhoza, J. Adamczewski-Musch, M.M. Aggarwal, Z. Ahammed, F. Ahmad, N. Ahmad, S. Ahmad, A. Akindinov, P. Akishin, E. Akishina, T. Akishina, V. Akishina, M. Al-Turany, S. Amar-Youcef, M. Anđelić, C. Andrei, A. Andronic, Yu. Anisimov, H. Appelshäuser, A. Arend, D. Argintaru, T. Armbruster, E. Atkin, S. Avdeyev, M.D. Azmi, V. Baban, M. Bach, E. Badura, S. Baginyan, T. Balog, S. Bandyopadhyay, P. Banerjee, N. Baranova, D. Bartoş, S. Bashir, Z. Basrak, M. Baszczyk, O. Batenkov, V. Baublis, C. Baumann, K.-H. Becker, T. Bel, S. Belogurov, I. Berceanu, E. Berdermann, A. Berdnikov, Y. Berdnikov, R. Berendes, C. Bergmann, D. Bertini, C. Beşliu, O. Bezshyyko, P.P. Bhaduri, A. Bhasin, A.K. Bhati, B. Bhattacharjee, A. Bhattacharyya, T.K. Bhattacharyya, S. Biswas, D. Blau, C. Blume, Yu. Bocharov, S. Böttger, M. Borysova, B. Bozsogi, T. Breitner, U. Brüning, J. Brzychczyk, A. Bubak, A. Bychkov, Xu Cai, M. Cãlin, R. Čaplar, G. Caragheorgheopol, I. Carević, V. Cătănescu, A. Chakrabarti, S. Chatterji, Sanatan Chattopadhyay, Subhasis Chattopadhyay, Hongfang Chen, Jianping Cheng, V. Chepurnov, S. Chernenko, A. Chernogorov, M.I. Ciobanu, G. Claus, F. Constantin, V. Covlea, M. Csanád, N. DʼAscenzo, S. Das, K. Davkov, V. Davkov, J. de Cuveland, B. Debnath, Zhi Deng, H. Deppe, I. Deppner, O. Derenovskaya, M. Deveaux, K. Dey, M. Dey, P. Dillenseger, V. Dobyrn, D. Doering, M. Domachowski, A. Dorokhov, C.A. Dritsa, A.K. Dubey, S. Dubnichka, A. Dubnichkova, W. Dulinski, M. Dželalija, D. Emschermann, H. Engel, V. Eremin, T. Eşanu, J. Eschke, O. Fateev, P. Fischer, H. Flemming, U. Frankenfeld, V. Friese, I. Fröhlich, J. Frühauf, Á. Fülöp, J. Gajda, T. Galatyuk, A. Galkin, V. Galkin, G. Gangopadhyay, M.S. Ganti, C. García Chávez, I. Gašparić, J. Gebelein, P. Ghosh, S.K. Ghosh, M. Goffe, V. Golovatyuk, S. Golovnya, V. Golovtsov, M. Golubeva, D. Golubkov, S. Gorbunov, D. Gottschalk, P. Gryboś, A. Grzeszczuk, F. Guber, A. Gupta, Yu. Gusakov, A. Haldar, S. Haldar, M. Hartig, J. Hehner, K. Heidel, N. Heine, A. Herghelegiu, N. Herrmann, B. Heß, J.M. Heuser, A. Himmi, C. Höhne, R. Holzmann, Guangming Huang, J. Hutsch, D. Hutter, A. Ierusalimov, E.-M. Ilgenfritz, M. Irfan, Valery Ivanov, Victor Ivanov, Vladimir Ivanov, A. Ivashkin, K. Jaaskelainen, V. Jakovlev, T. Janson, A. Jipa, I. Kadenko, B. Kämpfer, S. Kalcher, V. Kalinin, K.-H. Kampert, Tae Im Kang, E. Kaptur, R. Karabowicz, O. Karavichev, T. Karavicheva, D. Karmanov, V. Karnaukhov, E. Karpechev, K. Kasiński, M. Kaur, A. Kazantsev, U. Kebschull, G. Kekelidze, M.M. Khan, S.A. Khan, A. Khanzadeev, F. Khasanov, V. Kirakosyan, M. Kirejczyk, M. Kiš, I. Kisel, P. Kisel, S. Kiselev, A. Kiss, T. Kiss, R. Kłeczek, Ch. Klein-Bösing, V. Kleipa, K. Koch, L. Kochenda, P. Koczoń, B. Kolb, B. Komkov, J.M. Kopfer, M. Korolev, I. Korolko, R. Kotte, A. Kotynia, A. Kovalchuk, S. Kowalski, M. Koziel, G. Kozlov, P. Kravtsov, C. Kreidl, D. Kresan, M. Kretz, M. Krieger, E. Kryshen, W. Kucewicz, L. Kudin, A. Kugler, I. Kulakov, J. Kunkel, A. Kurepin, V. Kyva, V. Ladygin, C. Lara, P. Larionov, A. Laso Garcia, E. Lavrik, I. Lazanu, A. Lebedev, S. Lebedev, E. Lebedeva, J. Lehrbach, F. Lemke, Cheng Li, Jin Li, Li Qyian, Yuanjing Li, Yulan Li, V. Lindenstruth, S. Linev, E. Litvinenko, Feng Liu, I. Lobanov, E. Lobanova, S. Löchner, P.-A. Loizeau, A. Lymanets, A. Maevskaya, S. Mahajan, D.P. Mahapatra, T. Mahmoud, P. Maj, Z. Majka, A. Malakhov, O. Malyatina, H. Malygina, J. Manjavidze, V. Manko, S. Manz, V. Marin, T. Matulewicz, M. Merkin, V. Mialkovski, N. Miftakhov, K. Mikhailov, B. Milanovic, V. Militsija, F. Mir, W.F.J. Müller, C. Müntz, Yu. Murin, L. Naumann, T. Nayak, B. Neumann, W. Niebur, V. Nikulin, M. Nüssle, A. Oancea, Oh Kunsu, Y. Onishchuk, G. Ososkov, D. Ossetski, P. Otfinowski, E. Ovcharenko, Pal Susanta, I. Panasenko, S. Parzhitskiy, C. Pauly, Haiping Peng, I. Peric, D. Peshekhonov, V. Peshekhonov, V. Petráček, M. Petriş, A. Petrovici, M. Petrovici, A. Petrovskiy, O. Petukhov, K. Piasecki, J. Pietraszko, E. Plekhanov, V. Plujko, V. Poliakov, P. Polozov, A. Pop, V. Popov, V. Pospisil, B.V.K.S. Potukuchi, J. Pouryamout, A. Prakash, M. Prokudin, I. Pshenichnov, V. Pugatch, S. Querchfeld, S. Raha, W. Raja, F. Rami, R. Raniwala, S. Raniwala, A. Raportirenko, J. Rautenberg, R. Ray, S. Razin, P. Reichelt, S. Reinecke, A. Reshetin, C. Ristea, O. Ristea, E. Rostchin, I. Rostovtseva, A. Roy, J. Rożynek, Yu. Ryabov, V. Rykalin, A. Sadovsky, S. Sadovsky, P.K. Sahu, J. Saini, S.S. Sambyal, V. Samsonov, J. Sanchez Rosado, V. Saveliev, S. Schatral, C. Schiaua, C.J. Schmidt, H.R. Schmidt, C. Schrader, K. Schweda, A. Scurtu, S. Seddiki, A. Semennikov, A. Senger, P. Senger, A. Shabunov, Ming Shao, M.K. Sharma, V. Shumikhin, B. Sikora, A. Simakov, C. Simon, C. Simons, R.N. Singaraju, A.K. Singh, B.K. Singh, C.P. Singh, V. Singhal, M. Singla, K. Siwek-Wilczynska, L. Škoda, Song Jihye, I. Sorokin, D. Soyk, P. Staszel, A. Stavinskiy, E. Stephan, D. Storozhyk, M. Strikhanov, J. Stroth, C. Sturm, Yongjie Sun, O. Svoboda, R. Szczygieł, R. Talukdar, Zebo Tang, O. Tarassenkova, M. Târzilă, V. Tiflov, T. Tischler, P. Tlustý, T. Tolyhi, N. Topilʼskaya, C. Trageser, P. Trivedy, I. Tsakov, Yu. Tsyupa, F. Uhlig, E. Usenko, I. Valin, T. Vasiliev, I. Vassiliev, E. Verbitskaya, W. Verhoeven, A. Veshikov, Y. Viyogi, S. Volkov, Yu. Volkov, A. Vorobiev, A. Voronin, E. Vznuzdaev, M. Vznuzdaev, Dong Wang, Yaping Wang, Yi Wang, C. Wendisch, J.P. Wessels, J. Wiechula, B. Wiedemann, M. Winter, K. Wisniewski, D. Wohlfeld, Gy. Wolf, J. Wüstenfeld, Changzhou Xiang, Xu Nu, Jun-Gyu Yi, Yin Zhongbao, In-Kwon Yoo, Qian Yue, I. Yushmanov, Yu. Zaitsev, Yu. Zanevsky, M. Zhalov, Ya Peng Zhang, Yifei Zhang, Zhou Daicui, Xianglei Zhu, A. Zinchenko, W. Zipper, M. Żoładź, P. Zrelov, V. Zryuev, P. Zumbruch, and M. Zyzak

Subjects
Nuclear and High Energy Physics
Published
2013

5. Intrinsic resolutions of DEPFET detector prototypes measured at beam tests

Author

L. Malina, Robert Richter, Jelena Ninkovic, A. Frey, J. Knopf, Carlos Lacasta, C. Geisler, Hans Krüger, Peter Kodys, Carlos A. Iglesias, S. Rummel, Z. Doležal, J. Scheirich, T. Weiler, J. Caride, L. Reuen, Christian Koffmane, Norbert Wermes, Benjamin Schwenker, S. Heindl, C. Kreidl, Ladislav Andricek, Marcel Vos, Sergey Furletov, M. Koch, J. Schneider, Z. Drásal, P. Vazquez, Peter Kvasnicka, Julia Furletova, S. Esch, and Carlos Marinas

Subjects
Physics, Nuclear and High Energy Physics, Observational error, Large Hadron Collider, Physics::Instrumentation and Detectors, 010308 nuclear & particles physics, Scattering, business.industry, Detector, 01 natural sciences, Dot pitch, Optics, 0103 physical sciences, Cathode ray, High Energy Physics::Experiment, 010306 general physics, business, Instrumentation, Image resolution, Beam (structure)
Abstract

The paper is based on the data of the 2009 DEPFET beam test at CERN SPS. The beam test used beams of pions and electrons with energies between 40 and 120 GeV, and the sensors tested were prototypes with thickness of 450 μ m and pixel pitch between 20 and 32 μ m . Intrinsic resolutions of the detectors are calculated by disentangling the contributions of measurement errors and multiple scattering in tracking residuals. Properties of the intrinsic resolution estimates and factors that influence them are discussed. For the DEPFET detectors in the beam test, the calculation yields intrinsic resolutions of ≈ 1 μ m , with a typical accuracy of 0.1 μ m . Bias scan, angle scan, and energy scan are used as example studies to show that the intrinsic resolutions are a useful tool in studies of detector properties. With sufficiently precise telescopes, detailed resolution maps can be constructed and used to study and optimize detector performance.

Published
2011

6. Hybrid pixel detector based on capacitive chip to chip signal-transmission

Author

Peter Fischer, C. Kreidl, and Ivan Peric

Subjects
Physics, Capacitive coupling, Nuclear and High Energy Physics, CMOS sensor, Physics::Instrumentation and Detectors, Preamplifier, business.industry, Capacitive sensing, Detector, Hardware_PERFORMANCEANDRELIABILITY, Chip, Computer Science::Hardware Architecture, CMOS, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, business, Instrumentation, Diode
Abstract

Hybrid pixel-detectors for the detection of elementary particles without bump-interconnections will be presented. The signals, generated in the sensor chip, are transmitted using capacitive coupling to the readout chip. In order to ease the capacitive signal transmission, an active pixel sensor has been used. The sensor chip is implemented in a standard CMOS high-voltage technology where lowly doped n-well in p-substrate diodes are used as pixel-sensors. CMOS in-pixel preamplifiers are implemented inside the n-wells. Experimental results obtained with two different hybrid detector prototypes will be presented.

Published
2010

7. DCD – The Multi-Channel Current-Mode ADC Chip for the Readout of DEPFET Pixel Detectors

Author

Peter Fischer, Tim Armbruster, C. Kreidl, Ivan Peric, and M. Koch

Subjects
Physics, Nuclear and High Energy Physics, Detector, Hardware_PERFORMANCEANDRELIABILITY, Chip, Signal-to-noise ratio, Nuclear Energy and Engineering, CMOS, Nuclear electronics, Logic gate, Hardware_INTEGRATEDCIRCUITS, Electronic engineering, Cascode, Hardware_ARITHMETICANDLOGICSTRUCTURES, Electrical and Electronic Engineering, NMOS logic
Abstract

The current-mode ADC chip-prototype for the readout of DEPFET particle pixel-detectors with high spatial resolution is presented. The planned application of these DEPFET detectors are vertex detectors for ILC and Belle II. The chip has 72 ADC channels. Every channel processes the input signals using two cyclic ADCs that operate in parallel. The cyclic ADCs are based on current-mode memory cells. The measured signal to noise ratio of one ADC is about 660 (fast ADC variant: 520) and its conversion time is 320 ns (fast ADC variant: 160 ns) in the case of 8-bit resolution. Redundant signed-digit cyclic conversion is used for automated digital error correction. One ADC-core occupies only 40 ?m × 55 ?m, its static power consumption is 0.96 mW. Besides the two ADCs, every channel contains a regulated cascode and two additional current-mode memory cells that allow double-sampling of the input signal. Due to the need for high radiation tolerance, the chip has been implemented in a 180 nm CMOS technology using enclosed NMOS gate layouts. Novel radiation-hard circuits have been used. The chip has also been used to read out a small DEPFET test matrix.

Published
2010

8. DEPFET, a monolithic active pixel sensor for the ILC

Author

Ladislav Andricek, C. Sandow, R.H. Richter, A. Frey, N. Wermes, Jaap Velthuis, C. Kreidl, L. Reuen, Gerhard Lutz, H. G. Moser, R. Kohrs, A. Raspereza, Hans Krüger, M. Trimpl, Peter Fischer, Daniel Scheirich, F. Giesen, M. Mathes, P. Lodomez, Peter Kodys, Zdenek Dolezal, Q. Wei, E. von Törne, and M. Koch

Subjects
Physics, Nuclear and High Energy Physics, CMOS sensor, International Linear Collider, Silicon, business.industry, chemistry.chemical_element, Chip, CMOS, chemistry, MOSFET, Optoelectronics, Silicon detector, Field-effect transistor, business, Instrumentation
Abstract

In a DEPleted Field Effect Transistor (DEPFET) sensor a MOSFET is integrated on a sidewards depleted p-on-n silicon detector, thereby combining the advantages of a fully depleted silicon sensor with in-pixel amplification. A 450 μm thick DEPFET was tested in a testbeam. The S/N was found to be larger than 110. The position resolution is better than 5 μm. At a seed cut of 7σ, the efficiency and purity are both close to 100%. In the readout chip a zero-suppression capability is implemented. The functionality was demonstrated using a radio-active source. The predicted impact parameter resolution of a 50 μm thick DEPFET vertex detector, is much better than required for the International Linear Collider (ILC).

Published
2007

9. HV/HR-CMOS sensors for the ATLAS upgrade—concepts and test chip results

Author

Marzio Nessi, Fabian Hügging, Richard Bates, Antonio Miucci, J. C. Clemens, Didier Ferrere, Hans Krüger, F. Bompard, M. Garcia-Sciveres, Laura Gonella, Arnulf Quadt, Theresa Obermann, Daniel Muenstermann, P. Breugnon, M. George, Malte Backhaus, S. Godiot-Basolo, Julia Rieger, Norbert Wermes, M. Capeans, Sergio Gonzalez-Sevilla, J. Große-Knetter, Andrew Blue, D. Hynds, A. La Rosa, Jens Weingarten, P. Pangaud, Giuseppe Iacobucci, Branislav Ristić, D. Fougeron, Craig Buttar, Simon Feigl, Ivan Peric, Jian Liu, Tomasz Hemperek, M. Barbero, Alexandre Rozanov, Heinz Pernegger, and C. Kreidl

Subjects
Computer science, Physics::Instrumentation and Detectors, Novel high voltage and resistive CMOS sensors [6], 7. Clean energy, 01 natural sciences, 0103 physical sciences, Detectors and Experimental Techniques, 010306 general physics, Instrumentation, Radiation hardening, Engineering & allied operations, Mathematical Physics, Interconnection, Large Hadron Collider, Pixel, 010308 nuclear & particles physics, business.industry, Electrical engineering, High voltage, Chip, Upgrade, CMOS, Solid state detectors, Radiation-hard detectors, Particle tracking detectors (Solidstate detectors), High Energy Physics::Experiment, ddc:620, business
Abstract

In order to extend its discovery potential, the Large Hadron Collider (LHC) will have a major upgrade (Phase II Upgrade) scheduled for 2022. The LHC after the upgrade, called High-Luminosity LHC (HL-LHC), will operate at a nominal leveled instantaneous luminosity of 5 1034 cm􀀀2 s􀀀1, more than twice the expected Phase I. The new Inner Tracker needs to cope with this extremely high luminosity. Therefore it requires higher granularity, reduced material budget and increased radiation hardness of all components. A new pixel detector based on High Voltage CMOS (HVCMOS) technology targeting the upgraded ATLAS pixel detector is under study. The main advantages of the HVCMOS technology are its potential for low material budget, use of possible cheaper interconnection technologies, reduced pixel size and lower cost with respect to traditional hybrid pixel detector. Several first prototypes were produced and characterized within ATLAS upgrade R&D effort, to explore the performance and radiation hardness of this technology. In this paper, an overview of the HVCMOS sensor concepts is given. Laboratory tests and irradiation tests of two technologies, HVCMOS AMS and HVCMOS GF, are also given. peerReviewed

Published
2015
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10. Strip Technology and HVMPAS

Author

Rozanov Alexandre, Peter Fischer, P. Pangaud, C. Kreidl, Marlon Barbero, M. Garcia-Sciveres, Hong Hanh Nguyen, Ivan Peric, P. Breugnon, Jian Liu, Tomasz Hemperek, J. C. Clemens, Lingxin Meng, Hans Krueger, Fabian Huegging, Daniel Muenstermann, Backhaus Malte, D. Fougeron, and F. Bompard

Subjects
Computer science
Published
2013

11. DEPFET Active Pixel Detectors for a Future Linear e(+)e(-) Collider

Author

O. Alonso, R. Casanova, A. Dieguez, J. Dingfelder, T. Hemperek, T. Kishishita, T. Kleinohl, M. Koch, H. Kruger, M. Lemarenko, F. Lutticke, C. Marinas, M. Schnell, N. Wermes, A. Campbell, T. Ferber, C. Kleinwort, C. Niebuhr, Y. Soloviev, M. Steder, R. Volkenborn, S. Yaschenko, P. Fischer, C. Kreidl, I. Peric, J. Knopf, M. Ritzert, E. Curras, A. Lopez-Virto, D. Moya, I. Vila, M. Boronat, D. Esperante, J. Fuster, I. Garcia Garcia, C. Lacasta, A. Oyanguren, P. Ruiz, G. Timon, M. Vos, T. Gessler, W. Kuhn, S. Lange, D. Munchow, B. Spruck, A. Frey, C. Geisler, B. Schwenker, F. Wilk, T. Barvich, M. Heck, S. Heindl, O. Lutz, Th. Muller, C. Pulvermacher, H. J. Simonis, T. Weiler, T. Krausser, O. Lipsky, S. Rummel, J. Schieck, T. Schluter, K. Ackermann, L. Andricek, V. Chekelian, V. Chobanova, J. Dalseno, C. Kiesling, C. Koffmane, L. Li Gioi, A. Moll, H. G. Moser, F. Muller, E. Nedelkovska, J. Ninkovic, S. Petrovics, K. Prothmann, R. Richter, A. Ritter, M. Ritter, F. Simon, P. Vanhoefer, A. Wassatsch, Z. Dolezal, Z. Drasal, P. Kodys, P. Kvasnicka, J. Scheirich, European Organization for Nuclear Research, and Federal Ministry of Education and Research (Germany)

Subjects
Vertex (graph theory), Nuclear and High Energy Physics, Particle physics, Physics - Instrumentation and Detectors, Physics::Instrumentation and Detectors, vertex detector, ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION, FOS: Physical sciences, 01 natural sciences, High Energy Physics - Experiment, law.invention, High Energy Physics - Experiment (hep-ex), Signal-to-noise ratio, law, 0103 physical sciences, Electrical and Electronic Engineering, Detectors and Experimental Techniques, 010306 general physics, Collider, Precision Pixel Detectors [9.3], ComputingMethodologies_COMPUTERGRAPHICS, Advanced infrastructures for detector R&D [9], Physics, Pixel, 010308 nuclear & particles physics, Detector, Física, Instrumentation and Detectors (physics.ins-det), Active pixel sensor, Nuclear Energy and Engineering, High Energy Physics::Experiment, Vertex detector, linear collider, ddc:620, DEPFET, Pixel detector
Abstract

arXiv:1212.2160v1.-- et al., The DEPFET collaboration develops highly granular, ultra-transparent active pixel detectors for high-performance vertex reconstruction at future collider experiments. The characterization of detector prototypes has proven that the key principle, the integration of a first amplification stage in a detector-grade sensor material, can provide a comfortable signal to noise ratio of over 40 for a sensor thickness of 50-75 mu m. ASICs have been designed and produced to operate a DEPFET pixel detector with the required read-out speed. A complete detector concept is being developed, including solutions for mechanical support, cooling, and services. In this paper, the status of the DEPFET R & D project is reviewed in the light of the requirements of the vertex detector at a future linear e(+)e(-) collider., The authors would like to acknowledge the support from the AIDA project, that provided the infrastructure used to characterize the DEPFET prototypes in beam tests at CERN and DESY. This work was supported by the German Ministerium f̈ur Bildung, Wissenschaft, Forschung und Technologie (BMBF).

Published
2013

12. Progress towards a large area, thin DEPFET detector module

Author

Peter Fischer, S. Rummel, Gerhard Lutz, H. G. Moser, Hans Krüger, R. Kohrs, Jaap Velthuis, M. Trimpl, Sven Herrmann, N. Wermes, C. Kreidl, R.H. Richter, Lothar Strüder, L. Reuen, Ladislav Andricek, Johannes Treis, C. Sandow, Ivan Peric, M. Karagounis, E.v. Törne, and Matteo Porro

Subjects
Physics, Nuclear and High Energy Physics, International Linear Collider, Silicon, business.industry, Readout electronics, Detector, chemistry.chemical_element, Column (database), Settore ING-INF/01 - Elettronica, Silicon vertex detector, chemistry, Vertex detector, Optoelectronics, Particle sensor, Field-effect transistor, DEPFET, business, Instrumentation
Abstract

Large arrays of depleted field effect transistor (DEPFET) detector elements are one possible technology for the vertex detector of the planned International Linear Collider. The main challenges are the production of large ( 10 cm 2 ) devices with an average thickness of around 100 μ m (silicon) and their fast column parallel readout. This paper describes in some detail how a DEPFET based sensor module could be built and presents the design of the latest generation of ‘Switcher’ steering chips.

Published
2007

13. Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology

Author

A Miucci, L Gonella, T Hemperek, F Hügging, H Krüger, T Obermann, N Wermes, M Garcia-Sciveres, M Backhaus, M Capeans, S Feigl, M Nessi, H Pernegger, B Ristic, S Gonzalez-Sevilla, D Ferrere, G Iacobucci, A La Rosa, D Muenstermann, M George, J Große-Knetter, A Quadt, J Rieger, J Weingarten, R Bates, A Blue, C Buttar, D Hynds, C Kreidl, I Peric, P Breugnon, P Pangaud, S Godiot-Basolo, D Fougeron, F Bompard, J C Clemens, J Liu, M Barbero, A Rozanov, and for HV-CMOS collaboration

Subjects
Silicon, Physics::Instrumentation and Detectors, Computer science, chemistry.chemical_element, Hardware_PERFORMANCEANDRELIABILITY, Substrate (electronics), 01 natural sciences, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Electronics, Detectors and Experimental Techniques, 010306 general physics, Precision Pixel Detectors [9.3], Instrumentation, Mathematical Physics, Advanced infrastructures for detector R&D [9], Large Hadron Collider, Pixel, 010308 nuclear & particles physics, business.industry, Detector, Electrical engineering, Chip, CMOS, chemistry, business
Abstract

Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. 1Corresponding author. c CERN 2014, published under the terms of the Creative Commons Attribution 3.0 License by IOP Publishing Ltd and Sissa Medialab srl. Any further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation and DOI. doi:10.1088/1748-0221/9/05/C050642014 JINST 9 C05064 A proposal for the next generation of inner detectors is based on HV-CMOS: a new family of silicon sensors based on commercial high-voltage CMOS technology, which enables the fabrication of part of the pixel electronics inside the silicon substrate itself. The main advantages of this technology with respect to the standard silicon sensor technology are: low material budget, fast charge collection time, high radiation tolerance, low cost and operation at room temperature. A traditional readout chip is still needed to receive and organize the data from the active sensor and to handle high-level functionality such as trigger management. HV-CMOS has been designed to be compatible with both pixel and strip readout. In this paper an overview of HV2FEI4, a HV-CMOS prototype in 180 nm AMS technology, will be given. Preliminary results after neutron and X-ray irradiation are shown.

Published
2014

14. High-voltage pixel sensors for ATLAS upgrade

Author

J. C. Clemens, Malte Backhaus, Jens Weingarten, Richard Bates, P. Pangaud, F. Bompard, Alexandre Rozanov, Fabian Hügging, T. Hemperek, G. Iacobucci, Daniel Muenstermann, Norbert Wermes, D. Fougeron, Heinz Pernegger, D. Hynds, P. Breugnon, Craig Buttar, A. La Rosa, M. Garcia-Sciveres, Branislav Ristić, Andrew Blue, M. Capeans, Joern Grosse-Knetter, Arnulf Quadt, Didier Ferrere, C. Kreidl, Theresa Obermann, Julia Rieger, S. Gonzalez Sevilla, Hans Krüger, Peter Fischer, Simon Feigl, Ivan Peric, Jian Liu, M. Barbero, Marzio Nessi, Antonio Miucci, and M. George

Subjects
Nuclear and High Energy Physics, Physics::Instrumentation and Detectors, Smart diode array, High-voltage pixel detector, 7. Clean energy, 01 natural sciences, Particle detector, Computer Science::Hardware Architecture, Application-specific integrated circuit, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Electronics, Detectors and Experimental Techniques, 010306 general physics, Instrumentation, Radiation hardening, Physics, Pixel, 010308 nuclear & particles physics, business.industry, Detector, Electrical engineering, High voltage, Capacitive coupled pixel detector, CCPD, CMOS, High-voltage CMOS technology, HVMAPS, business
Abstract

The high-voltage (HV-) CMOS pixel sensors offer several good properties: a fast charge collection by drift, the possibility to implement relatively complex CMOS in-pixel electronics and the compatibility with commercial processes. The sensor element is a deep n-well diode in a p-type substrate. The n-well contains CMOS pixel electronics. The main charge collection mechanism is drift in a shallow, high field region, which leads to a fast charge collection and a high radiation tolerance. We are currently evaluating the use of the high-voltage detectors implemented in 180nm HV-CMOS technology for the high-luminosity ATLAS upgrade. Our approach is replacing the existing pixel and strip sensors with the CMOS sensors while keeping the presently used readout ASICs. By intelligence we mean the ability of the sensor to recognize a particle hit and generate the address information. In this way we could benefit from the advantages of the HV sensor technology such as lower cost, lower mass, lower operating voltage, smaller pitch, smaller clusters at high incidence angles. Additionally we expect to achieve a radiation hardness necessary for ATLAS upgrade. In order to test the concept, we have designed two HV-CMOS prototypes that can be readout in two ways: using pixel and strip readout chips. In the case of the pixel readout, the connection between HV-CMOS sensor and the readout ASIC can be established capacitively.

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