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Topological objects, such as magnetic vortices in soft-magnetic thin films, have attracted continued attention over the past 20 years for their unique magnetic reversal behavior and compelling potential applications. In exchange-coupled ferromagnetic/antiferromagnetic microdisks, high-resolution magnetic force microscopy imaging reveals a distorted ferromagnetic vortex structure due to randomly distributed (nonplanar) uncompensated spins at the antiferromagnetic/ferromagnetic interface. Further, in-field imaging and magneto-optical Kerr effect magnetometry demonstrate an unexpected increase in the stability of an otherwise somewhat volatile, intermediate vortex-antivortex state in exchange-coupled microdisks.

Spin orbit torque driven switching is a favourable way to manipulate nanoscale magnetic objects for both memory and wireless communication devices. The critical current required to switch from one magnetic state to another depends on the geometry and the intrinsic properties of the materials used, which are difficult to control locally. Here we demonstrate how focused helium ion beam irradiation can modulate the local magnetic anisotropy of a Co thin film at the microscopic scale. Real-time in-situ characterisation using the anomalous Hall effect showed up to an order of magnitude reduction of the magnetic anisotropy under irradiation, and using this, multi-level switching is demonstrated. The result is that spin-switching current densities, down to 800 kA cm$^{-2}$, can be achieved on predetermined areas of the film, without the need for lithography. The ability to vary critical currents spatially has implications not only for storage elements, but also neuromorphic and probabilistic computing., Main text: 22 pages, 3 figures, 2 tables, 1 TOC graphic. Included SI: 2 pages, 2 figures

Nanoscale, low-phase-noise, tunable transmitter-receiver links are key for enabling the progress of wireless communication. We demonstrate that vortex-based spin-torque nano-oscillators, which are intrinsically low-noise devices because of their topologically protected magnetic structure, can achieve frequency tunability when submitted to local ion implantation. In the experiments presented here, the gyrotropic mode is excited with spin-polarized alternating currents and anisotropic magnetoresistance measurements yield discrete frequencies from a single device. Indeed, chromium-implanted regions of permalloy disks exhibit different saturation magnetization than neighboring, non-irradiated areas, and thus different resonance frequency, corresponding to the specific area where the core is gyrating. Our study proves that such devices can be fabricated without the need for further lithographical steps, suggesting ion irradiation can be a viable and cost-effective fabrication method for densely packed networks of oscillators.

We investigate magnetization dynamics in asymmetric interlayer exchange coupled Py/Ru/Py trilayers using both vector network analyzer--based and electrically detected ferromagnetic resonance techniques. Two different ferromagnetic resonance modes, in-phase and out-of-phase, are observed across all three regimes of the static magnetization configurations, through antiparallel alignment at low fields, the spin-flop transition at intermediate fields, and parallel alignment at high fields. The nonmonotonic behavior of the modes as a function of the external field is explained in detail by analyzing the interlayer exchange and Zeeman energies and is found to be solely governed by the interplay of their dynamical components. In addition, the linewidths of both modes were determined across the three regimes and the different behaviors of the linewidths versus external magnetic field are attributed to mutual spin pumping induced in the samples. Interestingly, the difference between the linewidths of the out-of-phase and in-phase modes decreases at the spin-flop transition and is reversed between the antiparallel and parallel aligned magnetization states.

Interfaces separating ferromagnetic (FM) layers from non-ferromagnetic layers offer unique properties due to spin-orbit coupling and symmetry breaking, yielding effects such as exchange bias, perpendicular magnetic anisotropy, spin-pumping, spin-transfer torques, conversion between charge and spin currents and vice-versa. These interfacial phenomena play crucial roles for magnetic data storage and transfer applications, which require forming FM nano-structures embedded in non-ferromagnetic matrices. Here, we investigate the possiblity of creating such nano-structures by ion-irradiation. We study the effect of lateral confinement on the ion-irradiation-induced reduction of non-magnetic metal oxides (e.g., antiferro- or paramagnetic) to form ferromagnetic metals. Our findings are later exploited to form 3-dimensional magnetic interfaces between Co, CoO and Pt by spatially-selective irradiation of CoO/Pt multilayers. We demonstrate that the mechanical displacement of the O atoms plays a crucial role during the reduction from insulating, non-ferromagnetic cobalt oxides to metallic cobalt. Metallic cobalt yields both perpendicular magnetic anisotropy in the generated Co/Pt nano-structures, and, at low temperatures, exchange bias at vertical interfaces between Co and CoO. If pushed to the limit of ion-irradiation technology, this approach could, in principle, enable the creation of densely-packed, atomic scale ferromagnetic point-contact spin-torque oscillator (STO) networks, or conductive channels for current-confined-path based current perpendicular-to-plane giant magnetoresistance read-heads., Comment: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials and Interfaces copyright \c{opyright} American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https:// pubs.acs.org/articlesonrequest/AOR-rPGr2e7nZ7tzzwK3tnBZ

Here, we present an analytical and numerical model describing the magnetization dynamics in MgO-based spin-torque nano-oscillators with an in-plane magnetized polarizer and an out-of-plane free layer. We introduce the spin-transfer torque asymmetry by considering the cosine angular dependence of the resistance between the two magnetic layers in the stack. For the analytical solution, dynamics are determined by assuming a circular precession trajectory around the direction perpendicular to the plane, as set by the effective field, and calculating the energy integral over a single precession period. In a more realistic approach, we include the bias dependence of the tunnel magnetoresistance, which is assumed empirically to be a piecewise linear function of the applied voltage. The dynamical states are found by solving the stability condition for the Jacobian matrix for out-of-plane static states. We find that the bias dependence of the tunnel magnetoresistance, which is an inseparable effect in every tunnel junction, exhibits drastic impact on the spin-torque nano-oscillator phase diagram, mainly by increasing the critical current for dynamics and quenching the oscillations at high currents. The results are in good agreement with our experimental data published elsewhere., Comment: Manuscript: 14 pages, 10 figures

An experimental time-domain, room-temperature study of magnetization precession in ultra-thin Mn3-xGa films excited by femtosecond laser pulses is presented. The thickness dependence of the parameters of THz waves emitted from coherently driven magnetic resonances is investigated.

Magnetotransport is investigated in thin films of the half-metallic ferrimagnet Mn2RuxGa in pulsed magnetic fields of up to 58T. A non-vanishing Hall signal is observed over a broad temperature range, spanning the compensation temperature (155K), where the net magnetic moment is strictly zero, the anomalous Hall conductivity is 6673Ω−1 m−1 and the coercivity exceeds 9T. Molecular field modelling is used to determine the intra- and inter-sublattice exchange constants and from the spin-flop transition we infer the anisotropy of the electrically active sublattice to be 216kJm−3 and predict the magnetic resonances frequencies. Exchange and anisotropy are comparable and hard-axis applied magnetic fields result in a tilting of the magnetic moments from their collinear ground state. Our analysis is applicable to collinear ferrimagnetic half-metal systems.

Here, we demonstrate numerically that shape anisotropy in MgO-based spin-torque nano-oscillators consisting of an out-of-plane magnetized free layer and an in-plane polarizer is necessary to stabilize out-of-plane magnetization precession without the need of external magnetic fields. As the in-plane anisotropy is increased, a gradual tilting of the magnetization towards the in-plane easy direction is introduced, favouring zero-field dynamics over static in-plane states. Above a critical value, zero-field dynamics are no longer observed. The optimum ratio of in-plane shape to out-of-plane uniaxial anisotropy, for which large angle out-of-plane zero-field dynamics occur within the widest current range, is reported.

Similar to electrical currents flowing through magnetic multilayers, thermal gradients applied across the bather of a magnetic tunnel junction may induce pure spin-currents and generate 'thermal' spin-transfer torques large enough to induce magnetization dynamics in the free layer. In this study, we describe a novel experimental approach to observe spin-transfer torques induced by thermal gradients in magnetic multilayers by studying their ferromagnetic resonance response in microwave cavities. Utilizing this approach allows for measuring the magnetization dynamics on micron/nanosized samples in open-circuit conditions, i.e. without the need of electrical contacts. We performed first experiments on magnetic tunnel junctions patterned into 6 x 9 mu m(2) ellipses from Co2FeAl/MgO/CoFeB stacks. We conducted microresonator ferromagnetic resonance (FMR) under focused laser illumination to induce thermal gradients in the layer stack and compared them to measurements in which the sample was globally heated from the backside of the substrate. Moreover, we carried out broadband FMR measurements under global heating conditions on the same extended films the microstructures were later on prepared from. The results clearly demonstrate the effect of thermal spin-torque on the FMR response and thus show that the microresonator approach is well suited to investigate thermal spin-transfer-driven processes for small temperatures gradients, far below the gradients required for magnetic switching.

Tunnel magnetoresistance (TMR) was measured in CoFeB–MgO-based double-barrier magnetic tunnel junctions. The variation of sputtering power density is used to control the relative B content of the middle electrode. MR ratios in both top and bottom junctions are suppressed with respect to the single-barrier case. While the bottom junction shows a saturation of the MR as a function of high-temperature annealing for all sputtering power densities, the top junction exhibits an increase in MR as a function of annealing temperature with higher values for higher sputtering power density. The suppression of high MR is attributed to a lack of strong crystallization in the middle electrode, which is confirmed by cross-sectional transmission electron microscopy. Slight crystallization of the middle electrode is achieved at the highest sputtering power density despite the fact that boron diffusion is suppressed due to the adjacent MgO tunnel barriers. Optimal deposition and postannealing conditions resulted in MR values of 140% and 80% for the top and bottom junctions, respectively.

We report on narrow band THz emission from ferrimagnetic Mn3-xGa nanofilms based. The emission originates from coherently excited spin precession. The central frequency of the emitted radiation is determined by the anisotropy field, while the bandwidth relates to Gilbert damping. It is shown how THz emission can be used for the characterization dynamical properties of ultra-thin magnetic films. We furthermore discuss the potential of these types of films as efficient on-chip spintronic THz emitter.

Narrow-band terahertz emission from coherently excited spin precession in metallic ferrimagnetic Mn3-xGa Heusler alloy nanofilms has been observed. The efficiency of the emission, per nanometer film thickness, is comparable or higher than that of classical laser-driven terahertz sources based on optical rectification. The center frequency of the emission from the films can be tuned precisely via the film composition in the range of 0.20-0.35 THz, making this type of metallic film a candidate for efficient on-chip terahertz emitters. Terahertz emission spectroscopy is furthermore shown to be a sensitive probe of magnetic properties of ultra-thin films. Published by AIP Publishing.

Spin-transfer-torque-induced switching is investigated in 200 nm diameter circularly shaped, perpendicularly magnetized nanopillars. A synthetic antiferromagnet, consisting of two Co/Ni multilayers coupled antiferromagnetically across a Ru layer, is used as a reference layer to minimize the dipolar field on the free layer. The free layer is a single 4 $\times$ [Co/Ni] multilayer. The use of Pt and Pd was avoided to lower the spin-orbit scattering in magnetic layers and intrinsic damping in the free layer, and therefore, reduce the critical current required for spin-transfer-torque switching. The intrinsic Gilbert damping constant of a continuous 4 $\times$ [Co/Ni] multilayer film was measured by ferromagnetic resonance to be $\alpha = 0.022$ , which is significantly lower than in Pt- or Pd-based magnetic multilayers. In zero magnetic field, the critical current required to switch the free layer from parallel to antiparallel alignment is 5.2 mA, and from antiparallel to parallel alignment is 4.9 mA. Given the volume of the free layer, $V_{FL} = 1.01 \times 10^{-22}$ m $^{3}$ , the switching efficiency, $I_{c}/(V_{FL}\times\mu_{0}H_{c}$ ), is $5.28 \times 10^{20}$ A/T $\cdot$ m $^{3}$ , twice as efficient as any previously reported device with a similar structure.

Spin-torque nano-oscillators (STNOs) are novel devices which may be exploited for wireless communication applications [1-3]. In particular, it has recently been demonstrated that STNOs utilizing an in-plane (IP) magnetized polarizer (also acting as read-out layer) and out-of-plane (OOP) magnetized free layer allow for the full parallel (P)-to-antiparallel (AP) resistance variation to be exploited in the limit of 90° precession angle, thereby maximizing the output power [1]. However, for this specific geometry, steady-state precession can only be sustained if the spin-transfer torque exhibits an asymmetric dependence on the angle between the free and the polarizing layer, such as in the case of fully metallic devices [1]. Nevertheless, it has recently been reported that dynamics have been experimentally observed in similarly designed MgO-based MTJs under constant applied electrical current, in spite of the fact that such devices do not exhibit any asymmetry in the spin-torque angular dependence [4,5]. These results have so far been interpreted based on the formalism for metallic devices, including the spin-torque angular dependence.

The static and dynamic magnetic properties of tetragonally distorted Mn--Ga based alloys were investigated. Static properties are determined in magnetic fields up to 6.5~T using SQUID magnetometry. For the pure Mn$_{1.6}$Ga film, the saturation magnetisation is 0.36~MA/m and the coercivity is 0.29~T. Partial substitution of Mn by Co results in Mn$_{2.6}$Co$_{0.3}$Ga$_{1.1}$. The saturation magnetisation of those films drops to 0.2~MA/m and the coercivity is increased to 1~T. Time-resolved magneto-optical Kerr effect (TR-MOKE) is used to probe the high-frequency dynamics of Mn--Ga. The ferromagnetic resonance frequency extrapolated to zero-field is found to be 125~GHz with a Gilbert damping, $\alpha$, of 0.019. The anisotropy field is determined from both SQUID and TR-MOKE to be 4.5~T, corresponding to an effective anisotropy density of 0.81~MJ/m$^3$. Given the large anisotropy field of the Mn$_{2.6}$Co$_{0.3}$Ga$_{1.1}$ film, pulsed magnetic fields up to 60~T are used to determine the field strength required to saturate the film in the plane. For this, the extraordinary Hall effect was employed as a probe of the local magnetisation. By integrating the reconstructed in--plane magnetisation curve, the effective anisotropy energy density for Mn$_{2.6}$Co$_{0.3}$Ga$_{1.1}$ is determined to be 1.23~MJ/m$^3$., Comment: J. Phys. D (accepted)

MgO-based magnetic tunnel junctions (MTJs) are currently the structures of choice for magnetic random access memories (MRAMs), as they exhibit extremely high tunnel magnetoresistance (TMR) values due to highly effective spin-dependent tunneling [1, 2]. Initial studies focused on devices with both free and reference layers exhibiting in-plane remnant states [3, 4]. On the other hand, it has been reported that devices having the magnetic layers magnetized perpendicular to the layer interface offer a better trade-off between reducing the writing power and maintaining a thermal stability sufficient for data retention [5, 6]. It has also been recently demonstrated that CoFeB-based MgO-MTJs can exhibit perpendicular magnetic anisotropy (PMA), while maintaining the crystalline quality of the barrier required for achieving high TMR ratios, thus making them good candidates for next generation spin-transfer-torque (STT) MRAM [7].

We calculate the switching voltages for MgO-based magnetic tunnel junctions taking into account both the in-plane and the fieldlike spin-torque terms. To this end, we analytically solve the Landau-Lifshitz-Gilbert equation for a generalized geometry. We assume that the in-plane spin-torque varies linearly with the applied voltage, while the fieldlike torque exhibits a quadratic voltage dependence. Specifically, we consider that the free layer has two generic, orthogonal anisotropy components, one of which is along the direction defined by the magnetization of the reference layer, which also serves as a polarizer. The resulting formalism is applied to three different, experimentally relevant geometries: tunnel junctions with both the free and the reference layers magnetized in the plane of the layers, junctions with fully perpendicular anisotropy, and perpendicular junctions with an additional in-plane easy axis, respectively. We find that for in-plane devices, the quadratic dependence of the fieldlike torque on the applied voltage can lead to back hopping, which remains possible if we insert an additional linear term for the bias dependence of the fieldlike spin-torque comparable to current experimental results. For perpendicular anisotropy junctions neither back hopping nor spin-transfer-driven steady-state precession are expected. An additional in-plane shape anisotropy component stabilizes canted states in tunnel junctions with perpendicular anisotropy for specific values of voltage and field. The results are consistent with numerical integration of the Landau-Lifshitz-Gilbert equation and in good agreement with recent experiments involving perpendicular magnetic anisotropy magnetic tunnel junctions.

Perpendicular magnetic anisotropy is observed in ultrathin (~ 0.6 nm) amorphous Co40Fe40B20 when sputtered on an MgO (001) buffer layer and capped with Pd. The layers are superparamagnetic with a blocking temperature of ~ 230 K, below which they show an exponential temperature dependence of coercivity. Perpendicular magnetic anisotropy is observed in the as-deposited state and the mechanism is different from that of CoFeB/Pt, which requires postannealing. These ultrathin layers could be a model system for studies of electric field effects on magnetic anisotropy.

We report effect of the annealing temperature on the dynamic and static magnetic properties of MgO/CoFeB/Ta/Ru multilayers. The angular resolved ferromagnetic resonance measurements results show that the as-deposited film exhibits in-plane magnetic anisotropy, whereas in the annealed films the magnetic easy-axis is almost along the direction perpendicular to the plane of the layers. The extracted interfacial anisotropy energy, Ki, is maximized at an annealing temperature 225 °C, in agreement with the vibrating sample magnetometry results. Although the magnetization is not fully out-of-plane, controlling the degree of the magnetization obliquity may be advantageous for specific applications such as spin-transfer oscillators.

Tunnel magnetoresistance ratios of up to 40% are measured between 10 K and 300 K when the highly spin-polarized compensated ferrimagnet, Mn2RuxGa, is integrated into MgO-based perpendicular magnetic tunnel junctions. Temperature and bias dependences of the tunnel magnetoresistance effect, with a sign change near −0.2 V, reflect the structure of the Mn2RuxGa interface density of states. Despite magnetic moment vanishing at a compensation temperature of 200 K for x≈0.8, the tunnel magnetoresistance ratio remains non-zero throughout the compensation region, demonstrating that the spin-transport is governed by one of the Mn sub-lattices only. Broad temperature range magnetic field immunity of at least 0.5 T is demonstrated in the same sample. The high spin polarization and perpendicular magnetic anisotropy make Mn2RuxGa suitable for applications in both non-volatile magnetic random access memory cells and terahertz spin-transfer oscillators.

International audience; Biomagnetic signals, mostly due to the electrical activity in the body, are very weak and they canonly be detected by the most sensitive magnetometers, such as Superconducting QuantumInterference Devices SQUIDs. We report here biomagnetic recordings with hybrid sensors basedon Giant MagnetoResistance GMR.We recorded magnetic signatures of the electric activity of thehuman heart magnetocardiography in healthy volunteers. The P-wave and QRS complex, knownfrom the corresponding electric recordings, are clearly visible in the recordings after an averagingtime of about 1 min. Multiple recordings at different locations over the chest yielded a dipolarmagnetic field map and allowed localizing the underlying current sources. The sensitivity of theGMR-based sensors is now approaching that of SQUIDs and paves way for spin electronics devicesfor functional imaging of the body.

Excited magnetization dynamics in a spin-valve device consisting of an in-plane polarizer and an out-of-plane free layer were studied numerically. In the case where the free layer is assumed to lack any in-plane anisotropy components, a finite external field is required to generate steady-state dynamics, in agreement with previous reports. We demonstrate that this constraint can be removed and precession can be stabilized in zero applied field by introducing an additional in-plane anisotropy axis. Moreover, the in-plane anisotropy offers an additional degree of freedom for tuning the frequency response of the device.

We use a focused helium ion beam microscope to controllably remove material from Pt-capped Co/Pt thin film multilayers with perpendicular magnetic anisotropy. The dose required to remove several nm of the cap layer is similar to that required to induce a spin reorientation transition. Milling depth for the Pt overlayer is found to scale with the logarithm of ion dose, with very high removal yields of hundreds of atoms per He+ ion at low doses. While the deposited energy is of order of previous broad beam helium irradiations, the current density impacting on the surface of the sample is several tens of A cm−2, orders of magnitude higher. Patterning of the platinum capping layer with 20 nm resolution is demonstrated.

Data are presented which indicate a modification of magnetic anisotropy in the MgO/CoFeB/Pd and MgO/CoFeB/Pt systems, using electric fields of order 500 MV m−1 (0.5 V nm−1) applied across a thermally grown SiO2 as a gate dielectric. The effect is most prominent at low temperature (12 K) and is manifested as a small change in coercivity. The sign of the effect depends on the choice of both capping layer and annealing temperature. The results suggest that both interfaces play a role in the appearance of perpendicular magnetic anisotropy in these thin-film stacks, and not just the interface with MgO.

A dual spin valve is built with exchange bias on the top and bottom pinned layers and a central free layer. By suitable choice of the antiferromagnetic and ferromagnetic layer thicknesses, it is possible to separate the three magnetization switching fields and produce a staircase magnetoresistive curve. The maximum magnetoresistance (MR) ratio is 7.6% for current-perpendicular-to-plane and 6.3% for current-in-plane geometries with intermediate MRs of 3.9% and 3.0%, respectively. The use of exchange bias in a multistate memory device is discussed.

We report an oscillation of the giant magnetoresistance (GMR) ratio as a function of Ru layer thickness in the CoFe/Cu/[CoFe/Ru/CoFe]SAF/Cu/CoFe/IrMn dual spin valve (SV) structure. A normal GMR with a positive sign is observed for the thickness of Ru providing a ferromagnetic interlayer exchange coupling (IEC). The inverted GMR is observed for the thickness of Ru providing an antiferromagnetic IEC, which is consistent with IEC period across the Ru spacer as well as the electrical separation of the overall structure into two SVs connected in parallel.

Spin-transfer-torque driven magnetization dynamics in a spin-valve device consisting of an in-plane magnetized polarizer and an out-of-plane magnetized free layer were studied numerically. Such devices hold promise for nanoscale wireless transmitters operating at gigahertz frequencies, compatible with current mobile telephone and wireless local area network technologies [1]. In traditional spin-transfer-torque devices, with applications as memory elements (spin-transfer-torque MRAM), the magnetic easy axes of both the free and reference layers are co-linear (either in-plane magnetized or perpendicularly magnetized) in order to give the maximum difference in magnetoresistance between the two available storage states i.e. fully parallel or fully anti-parallel alignment. For spin-transfer-oscillators the situation is somewhat different. The criterion for having two stable static states with well separated resistance values is no longer an important factor. What is desired is a precessional orbit that passes through both the fully parallel and fully anti-parallel state as well as the maximisation of the torque in the initial state. For this, the most efficient geometry is one in which the free layer is magnetized out-of-plane and the polarizing layer is magnetized in-plane. For the ground state, the spin-transfer-torque efficiency is close to maximum as the angle between the two layers is 90°. The amplitude of oscillation is maximised as precession around the film normal allows passage through the parallel and anti-parallel states in one precession cycle [2,3].