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5 results on '"C. Bru-Chevalier"'

1. Thermally activated inter-dots carriers' transfer in InAs QDs with InGaAs underlying layer: Origin and dependence on the post-growth intermixing

Author

L. Sfaxi, Hassen Maaref, M.H. Hadj Alouane, Vincent Aimez, Denis Morris, Bernard Paquette, Bassem Salem, Richard Arès, Olfa Nasr, Nicolas Chauvin, Bouraoui Ilahi, C. Bru-Chevalier, King Saud University [Riyadh] (KSU), Faculté des Sciences de Monastir (FSM), Université de Monastir - University of Monastir (UM), National Research Council of Canada (NRC), INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), and Université de Lyon-Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon)

Subjects
Intermixing, Materials science, Photoluminescence, 02 engineering and technology, 01 natural sciences, [SPI]Engineering Sciences [physics], Condensed Matter::Materials Science, Emission band, Laser linewidth, 0103 physical sciences, Materials Chemistry, Quantum well, 010302 applied physics, Strain reducing, Condensed matter physics, Quantum dots, business.industry, Mechanical Engineering, Metals and Alloys, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Inter-dots carriers transfer, Mechanics of Materials, Quantum dot, Optoelectronics, 0210 nano-technology, business
Abstract

International audience; This paper reports on experimental and theoretical investigation of atyical temperature-dependent photoluminescence properties of InAs quantum dots in close proximity to InGaAs strain-relief underlying quantum well. The impact of a post-growth intermixing process on these properties has been studied. For the as-grown sample, the maximum of the emission band follows a sigmoidal function while the photoluminescence linewidth mimics a V-shape function as the temperature increases, from 11 to 300 K. These behaviors are attributed to thermally activated carrier transfer mechanisms within the inhomogenious distribution of quantum dots. These atypical behaviors are found to disappear progressively with the degree of intermixing and consequent narrowing of the dot size dispersion. The experimental results have been interpreted in the frame of the localized states ensemble model revealing that the large dots size distribution is the main origin of the observed anomalies. Furthermore, the calculations show that the quantum well continuum states act as a transit channel for the redistribution of thermally activated carriers.

Published
2016

2. Experimental and theoretical investigation of carrier confinement in InAs quantum dashes grown on InP(001).

Author

P. Miska, B. D., T. J. Even, B. D., C. Platz, B. D., B. Salem, T. Benyattou, B. D., C. Bru-Chevalier, B. D., G. Guillot, B. D., G. Bremond, Kh. Moumanis, B. D., F. H. Julien, B. D., O. Marty, C. Monat, B. D., and M. Gendry, B. D.

Subjects
INDIUM arsenide, QUANTUM electrodynamics, ELECTRONIC structure, PHOTOLUMINESCENCE, ELECTRONIC excitation, QUANTUM field theory, ENERGY-band theory of solids
Abstract

Carrier confinement in InAs quantum dashes (QDas) grown on InP(001) is investigated both experimentally and theoretically. The aim of these studies is to reconstruct the electronic structure of the QDas. QDas with low size dispersion are achieved by improving growth conditions. Optical transitions between ground and excited states are studied by continuous-wave-photoluminescence and photoluminescence-excitation experiments at low temperature. We also report on infrared spectroscopy of conduction-band intersubband transitions. A simplified theoretical model is developed, yielding results consistent with the experimental data. Combining experimental and theoretical results, we propose an interpretation of the optical transitions occurring in these QDas, and we give a first theoretical absorption spectrum of these structures. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
2004
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3. Toward long wavelength low density InAs/GaAs quantum dots

Author

Georges Bremond, Hassen Maaref, L. Sfaxi, M. Baira, E. Tranvouez, Bouraoui Ilahi, C. Bru-Chevalier, Faculté des Sciences de Monastir (FSM), Université de Monastir - University of Monastir (UM), Laboratoire de Micro-optoélectronique et Nanostructures [Monastir], Université de Monastir - University of Monastir (UM)-Université de Monastir - University of Monastir (UM), Laboratoire de Photophysique Moléculaire (PPM), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Physics, Photoluminescence, General Physics and Astronomy, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Blueshift, Full width at half maximum, [SPI]Engineering Sciences [physics], Quantum dot, Excited state, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Atomic physics, 010306 general physics, 0210 nano-technology, Spectroscopy, Deposition (law), ComputingMilieux_MISCELLANEOUS, Molecular beam epitaxy
Abstract

Optical and morphological properties of solid source molecular beam epitaxy (MBE) grown InAs/GaAs quantum dots are investigated by photoluminescence spectroscopy (PL) and atomic force microscopy (AFM) as a function of the growth rate. The 10 K relatively high excitation density PL spectra of the investigated samples reveal the existence of multipeaks characterizing fundamental states and corresponding excited states. The emission energies are red-shifted by approximately 70 meV, when the InAs deposition rate is reduced from 0.069 ML/s to 0.013 ML/s. By further reducing the growth rate down to 0.003 ML/s an unexpected blue shift of the emission energy occurs. AFM observations, carried out on similar uncapped samples, show a monotonic decrease of the QDs density with decreasing QDs material's deposition rate. For a growth rate of 0.003 ML/s, islands density of 4.9 × 10 9 cm −2 has been achieved with a room temperature PL full width at half maximum (FWHM) of 22 meV. For the later growth rate, the blue shift of the emission energy has been correlated with desorption of In atoms during InAs deposition.

Published
2006

4. Experimental and theoretical investigation of carrier confinement in InAs quantum dashes grown on InP(001)

Author

Taha Benyattou, Kh. Moumanis, Jacky Even, Patrice Miska, Charly Platz, F. H. Julien, Bassem Salem, Christelle Monat, Gérard Guillot, Olivier Marty, Michel Gendry, C. Bru-Chevalier, Georges Bremond, Laboratoire d'Etudes des NanoStructures (LENS), Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES), Laboratoire de physique de la matière (LPM), Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Electronique, Nanotechnologies, Capteurs (LENAC), Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon, Laboratoire d'électronique, optoélectronique et microsystèmes (LEOM), Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), and École Centrale de Lyon (ECL)

Subjects
010302 applied physics, Absorption spectroscopy, Condensed matter physics, Chemistry, General Physics and Astronomy, Infrared spectroscopy, 02 engineering and technology, Electronic structure, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, 01 natural sciences, Molecular physics, [SPI.MAT]Engineering Sciences [physics]/Materials, Condensed Matter::Materials Science, [SPI]Engineering Sciences [physics], Excited state, 0103 physical sciences, Dispersion (optics), [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, 0210 nano-technology, Quantum
Abstract

International audience; Carrier confinement in InAs quantum dashes (QDas) grown on InP(001) is investigated both experimentally and theoretically. The aim of these studies is to reconstruct the electronic structure of the QDas. QDas with low size dispersion are achieved by improving growth conditions. Optical transitions between ground and excited states are studied by continuous-wave-photoluminescence and photoluminescence-excitation experiments at low temperature. We also report on infrared spectroscopy of conduction-band intersubband transitions. A simplified theoretical model is developed, yielding results consistent with the experimental data. Combining experimental and theoretical results, we propose an interpretation of the optical transitions occurring in these QDas, and we give a first theoretical absorption spectrum of these structures.

Published
2004

5. AFM study and optical properties of GaAsN/GaAs epilayers grown by MOVPE

Author

H. Dumont, Jean Bouix, C. Bru-Chevalier, Laurent Auvray, J. Dazord, Yves Monteil, Laboratoire des Multimatériaux et Interfaces (LMI), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique de la matière (LPM), Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, [PHYS]Physics [physics], Photoluminescence, Annealing (metallurgy), Chemistry, Atomic force microscopy, Analytical chemistry, Mineralogy, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, 01 natural sciences, Inorganic Chemistry, Laser linewidth, 0103 physical sciences, Materials Chemistry, Dimethylhydrazine, Metalorganic vapour phase epitaxy, 0210 nano-technology, Vicinal, ComputingMilieux_MISCELLANEOUS
Abstract

We report a study on surface morphology and optical properties of GaAsN epilayers grown on GaAs (1 0 0) vicinal substrates by metalorganic vapor-phase epitaxy (MOVPE), using dimethylhydrazine as the N source. The surface morphology was investigated by atomic force microscopy (AFM) as a function of N composition and growth temperature ( T g ). At T g =530–550°C, we observed a transition from a bunched step/terrace structure towards a surface with indistinct step/terrace structure when increasing the N content. We attribute this evolution to a transition from step-bunching towards 2D-nucleation growth, related to decreased Ga surface-diffusion length. The optical properties were studied using room-temperature (RT) and low-temperature photoluminescence (PL), and photoreflectance (PR). Post-growth thermal annealing were carried out on GaAs-capped layers. A drastic increase of the RT PL intensity and a narrowing of the linewidth were observed under optimum annealing conditions. The influence of annealing temperature and duration were also examined.

Published
2000

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