Search

WOS: 000452762000010, Amorphous films of two varieties of zinc stannate (ZnSnO3 and Zn2SnO4) have been considered that were fabricated by radio-frequency sputtering of ceramic compound targets containing ZnO and SnO2 in 1: 1 and 2: 1 ratios. The elemental and phase compositions of the films and their optical and electrical parameters were determined. The transparency of the films in the visible spectral range is on average 87%. Zinc stannate amorphous films have a high electrical conductivity in contrast to amorphous ZnO and SnO2. This phenomenon, which makes it possible to use zinc stannate amorphous films in transparent and flexible electronics, is explained., Russian Foundation for Basic Research and TUBITAK [12-02-91373_CT_a], This study was supported in part by the Russian Foundation for Basic Research and TUBITAK, grant no. 12-02-91373_CT_a.

WOS: 000360511400014, The preparation of (SnO2)(x)(ZnO)(1-x) powder as a ceramic target material via hydrothermal synthesis within a broad range of x values (x = 0-1) was investigated. The phase development and particle characteristics of the Zn2SnO4 powders were evaluated. The phase formations of the (SnO2)(x)(ZnO)(1-x) system in the range from x = 0.0 to 1.00 were mapped, and the ZnO, SnO2 and Zn2SnO4 phases were found to depend on the changing x value. The effects of the processing parameters, including the treatment temperature (180-220 degrees C), time (0-24h) and initial concentrations of precursors (Sn:Zn = 0.125:0.3,0.2:0.48, 0.25:0.6, 0.35:0.84, 0.5:1.20), on the formation mechanism of Zn2SnO4 were discussed in detail. Almost single phase Zn2SnO4 occurs only when x = 0.29 (Zn/Sn= 2.4:1) for the (SnO2)(x)(ZnO)(1-x) composite system at 220 degrees C for 24h. The results reveal that the target prepared from synthesized Zn2SnO4 powder can be successfully used to develop thin film transistor channels, Scientific and Technological Research Council of Turkey (TUBITAK) [111M670]; Anadolu University [1303F056, 1305F086]; State Program of Ministry Science and Education of Russian Federation [280, 3.574.2014/K], This study was sponsored by a bilateral research project between Turkey & Russia under the contact number 111M670 by the Scientific and Technological Research Council of Turkey (TUBITAK). The work was also supported by Anadolu University under the contract numbers 1303F056 and 1305F086. The work was also supported by the State Program of Ministry Science and Education of Russian Federation project N 280 and program N 3.574.2014/K. We would like to thank to Pinar KAYA and Tayfun OZMEN for their helps.

Semiconducting metal oxide sensors have been widely studied due to their small dimensions, low cost and low power consumption. Among semiconductor oxide materials, zinc oxide (ZnO) is a very interesting one due to its chemical and thermal stability, its large exciting binding energy and band gap as n-type semiconductor, and, especially, to its high response to toxic and combustible gases. ZnO is a potential material for gas sensor applications because of its high piezoelectric coefficient, great stability of its hexagonal phase and its pyroelectric property. Hydrothermal synthesis is one of the most useful methods to produce homogeneous, nanosized ZnO powders with high purity, controlled particle size and morphology. Therefore, ZnO with various morphologies can be synthesized via simple hydrothermal reactions. The research objectives of this study were to understand formation and growth process of ZnO particles with various morphologies and to investigate role of starting materials, (i.e., zinc chloride (ZnCl2) and zinc nitrate hexahydrate (Zn(NO3)2.6H2O) on the particle morphology. In the present study, ZnO particles with various morphologies were synthesized via an unstirred hydrothermal method. When the using ZnCl2 as a precursor, the final morphology was rod like with a taped tip (length of the rod 0.5-1um ) after 12 h at 100°C. On the other hand, final morphology of the produced ZnO particles was branch rodlike (5-10um) when using Zn(NO3)2.6H2O as precursor under the same synthesis conditions. Accordingly, a proposed growth mechanism has been suggested. Keywords: ZnO; Hydrothermal synthesis; Phase development; Morphology; Growth mechanism DOI: 10.17350/HJSE19030000034 Full Text

WOS: 000340381700023, The study is concerned with high-purity SnO2 and ZnO powders produced from salt solutions of corresponding metals by low-temperature hydrothermal synthesis. Fragments of SnO2 and ZnO ceramic targets formed as 1 x 8 cm bars are fabricated by dry pressing. The bars are used to form composite targets for ion-beam sputtering and the fabrication of compositionally different (SnO2) (x) (ZnO)(1 - x) (x = 1-0.5) films appropriate for the production of gas sensors or transparent electronic devices. The optical and electrical parameters of the films with different compositions are studied., Russian Foundation for Basic Research [12-02-91373_ST_a], This study was supported by the Russian Foundation for Basic Research, joint Russian-Turkish project RFBR-TUBITAK, no. 12-02-91373_ST_a.