1. 1.26 $��$m intersubband transitions in In$_{0.3}$Ga$_{0.7}$As/AlAs quantum wells
- Author
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C. PASCUAL GARCIA, A. DE NARDIS, V. PELLEGRINI, JANCU J. M., BELTRAM F., MLLER B. H., SORBA L., FRANCIOSI, ALFONSO, C., PASCUAL GARCIA, A., DE NARDIS, V., Pellegrini, Jancu, J. M., Beltram, F., Mller, B. H., Sorba, L., and Franciosi, Alfonso
- Subjects
Condensed Matter::Materials Science ,Condensed Matter::Other ,Materials Science (cond-mat.mtrl-sci) ,FOS: Physical sciences ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect - Abstract
We observed room-temperature intersubband transitions at 1.26 microns in n-doped type-II In$_{0.3}$Ga$_{0.7}$As/AlAs strained quantum wells. An improved tight-binding model was used to optimize the structure parameters in order to obtain the shortest wavelength intersubband transition ever achieved in a semiconductor system. The corresponding transitions occur between the first confined electronic levels of the well following mid-infrared optical pumping of electrons from the barrier X-valley into the well ground state., To appear in Applied Physics Letters
- Published
- 2000
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