Search

Your search keyword '"Byrne, Diarmuid"' showing total 37 results
Start Over Author "Byrne, Diarmuid"
37 results on '"Byrne, Diarmuid"'

1. Development of small form factor packaged single-mode semiconductor laser for spectroscopic applications at 689 nm

Author

Ó Dúill, Seán P., Phelan, Richard, Gleeson, Michael, Byrne, Diarmuid, O'Carroll, John, Boylan, Neal, Nawrocka, Marta, Lambkin, Emma, Carney, Kevin, Maigyte, Lina, Lennox, Rob, Somers, Jim, Kelly, Brian, Bartlow, Matthew J., Foote, David B., Heiniger, Adam T., Haimberger, Chris, von Sivers, Moritz, Bachmann, Alexander, Löffler, Florian, Pavlov, N., Jost, John D., and Barry, Liam P.

Published
2023
Full Text
View/download PDF

2. Mid-Infrared InP-Based Discrete Mode Laser Diodes

Author

Phelan, Richard, primary, Byrne, Diarmuid, additional, O’Carroll, John, additional, Gleeson, Michael, additional, Nawrocka, Marta, additional, Lennox, Rob, additional, Carney, Kevin, additional, Herbert, Chris, additional, Somers, Jim, additional, and Kelly, Brian, additional

Published
2019
Full Text
View/download PDF

3. In-Depth Precision Studies of the Spectral Bandwidth of a 25 W 2 mm Band PM Hybrid Ho- and Tm-Doped Fiber Amplifier

Author

Tench, Robert E., Romano, Clément, Delavaux, Jean-Marc, Lennox, Rob, Byrne, Diarmuid, Carney, Kevin, and Publica

Subjects
polarization, optical fiber devices, Infrared Fiber Optics, Doped Fiber Amplifiers
Abstract

We report the broadband spectral performance of a three-stage, high gain, single mode, high output power (25 W) polarization-maintaining (PM) hybrid Ho-doped and Tm-doped fiber amplifier at signal wavelengths of ls = 2004-2108 nm. The three-stage amplifier consists of a two stage high gain Ho-doped PM single clad preamplifier stage followed by a Tm-doped PM double clad power amplifier. We employ narrow linewidth (< 2 MHz), single frequency, discrete mode, packaged InGaAs/InP based laser sources to study the performance of our amplifier in a master oscillator-power amplifier (MOPA) configuration. Measurements are made over a broad wavelength range that is determined by careful selection of the properties of the Ho-doped and Tm-doped fibers in the three amplifier stages. No nonlinear effects, such as stimulated Brillouin scattering (SBS) or stimulated Raman scattering (SRS), are observed at any signal wavelength in our measurements. We compare the experimental results with steady-state simulations of both the Ho-doped preamplifier and the TDFA booster and find good agreement between data and simulations for gain, noise figure, output power, and output optical spectra.

Published
2020

6. High power narrow linewidth discrete mode laser diode integrated with a curved semiconductor optical amplifier emitting at 2051 nm

Author

Phelan, Richard, primary, Gleeson, Michael, additional, Byrne, Diarmuid, additional, O’Carroll, John, additional, Nawrocka, Marta, additional, Carney, Kevin, additional, Lennox, Rob, additional, Maigyte, Lina, additional, Long, Phil, additional, Herbert, Chris, additional, Somers, Jim, additional, and Kelly, Brian, additional

Published
2018
Full Text
View/download PDF

11. A novel two-section tunable discrete mode Fabry-PÉrot laser exhibiting nanosecond wavelength switching

Author

Phelan, Richard, Guo, Wei Hua, Lu, Qiaoyin, Byrne, Diarmuid, Roycroft, Brendan, Lambkin, Paul, Corbett, Brian, Smyth, Frank, Barry, Liam P., Kelly, Brian, O'Gorman, James, Donegan, John Francis, Phelan, Richard, Guo, Wei Hua, Lu, Qiaoyin, Byrne, Diarmuid, Roycroft, Brendan, Lambkin, Paul, Corbett, Brian, Smyth, Frank, Barry, Liam P., Kelly, Brian, O'Gorman, James, and Donegan, John Francis

Abstract

A novel widely tunable laser diode is proposed and demonstrated. Mode selection occurs by etching perturbing slots into the laser ridge. A two-section device is realized with different slot patterns in each section allowing Vernier tuning. The laser operates at 1.3 mum and achieves a maximum output power of 10 mW. A discontinuous tuning range of 30 nm was achieved with a side mode suppression greater than 30 dB. Wavelength switching times of approximately 1.5 ns between a number of wavelength channels separated by 7 nm have been demonstrated.

Published
2008

25. Characterization of Reflective Defects in Fabry—Pérot Laser Diodes Through the Power Transmission Spectrum.

Author

Wei-Hua Guo, Byrne, Diarmuid, Phelan, Richard, Qiaoyin Lu, Donegan, John F., and Corbett, Brian

Subjects
*LASERS, *DIODES, *POWER transmission, *SEMICONDUCTOR lasers, *POWER (Mechanics)
Abstract

Reflective defects in Fabry-Pérot (FP) laser diodes are characterized through the power transmission spectrum based on the Fourier transform method. From a single measurement, the defect reflection, transmission coefficients and the cosine value of the defect phase shift, are calculated through equations built on the intensities of the peaks associated with defects in the Fourier transformed transmission spectrum. Gain dispersion which is unavoidable in semiconductor laser diodes is taken into account in the calculations. Extensive numerical simulations are made which show that the calculated defect characteristics are not influenced by the defect length and position and better results are obtained as the round-trip gain of the FP laser is relatively low. The simulation also shows that the underestimation of the gain caused by insufficient resolution of the measurement system degrades the calculated parameters. A deconvolution process is accordingly introduced, which is able to greatly reduce the resolution influence. Amplified spontaneous emission from FP laser diodes with a single slot very close to the laser front facet are measured and used to characterize the slot. The slots act as reflective defects in the laser diode and are produced by etching a rectangular well into the laser waveguide. For two lasers on the same bar with nominally the same slot, good agreement in the calculated reflection coefficient and cosine value of the slot phase shift is obtained, but the slot transmission coefficients calculated are different, which is due to the round-trip gain difference observed in the two lasers under the same current injection. [ABSTRACT FROM AUTHOR]

Published
2007
Full Text
View/download PDF

26. Narrow linewidth discrete mode laser diodes for advanced modulation formats.

Author

O'Carroll, John, Phelan, Richard, Kelly, Brian, Byrne, Diarmuid, Smyth, Frank, Cardiff, Barry, Anandarajah, Prince M., and Barry, Liam P.

Abstract

We report on discrete mode laser diodes with narrow linewidth and show comparable performance to an external cavity laser in a QPSK setup at baud rates as low as 2.5 Gbaud. [ABSTRACT FROM PUBLISHER]

Published
2012

27. Discrete mode laser diodes for FTTH/PON applications up to 10 Gbit/s

Author

O'Carroll, John, Phelan, Richard, Kelly, Brian, Byrne, Diarmuid, Latkowski, Sylwester, Anandarajah, Prince M., and Barry, Liam P.

Abstract

Discrete Mode Laser Diodes (DMLDs) present an economic approach with a focus on high volume manufacturability of single mode lasers using a single step fabrication process. We report on a DMLD designed for operation in the 1550 nm window with high Side Mode Suppression Ratio (SMSR) over a wide temperature tuning range of -20 °C < T < 95 °C. Direct modulation rates as high as 10 Gbit/s are demonstrated at both 1550 nm and 1310 nm. Transmission experiments were also carried out over single mode fibre at both wavelengths. Using dispersion pre-compensation transmission from 0 to 60 km is demonstrated at 1550 nm with a maximum power penalty measured at 60 km of 3.6 dB.

Published
2012
Full Text
View/download PDF

28. Narrow linewidth discrete mode laser diodes at 1550 nm

Author

O'Carroll, John, Phelan, Richard, Kelly, Brian, Byrne, Diarmuid, Smyth, Frank, Cardiff, Barry, Anandarajah, Prince M., and Barry, Liam P.

Abstract

We report on discrete mode laser diodes designed for narrow linewidth emission and demonstrate a linewidth as low as 96 kHz. A discrete mode laser diode with a minimum linewidth of 189 kHz was also characterised in a coherent transmission setup using quadrature phase shift keying modulation. Similar performance to an external cavity laser is demonstrated at baud rates as low as 2.5 Gbaud. The effect of increased linewidth on transmission performance is also investigated using lasers with linewidths up to 1.5 MHz.

Published
2012
Full Text
View/download PDF

37. Wide temperature range 0 < T < 85 °C narrow linewidth discrete mode laser diodes for coherent communications applications.

Author

O'Carroll J, Phelan R, Kelly B, Byrne D, Barry LP, and O'Gorman J

Abstract

Cost effective lasers meeting the linewidth requirements for coherent communication systems are a key element in reducing the overall cost of future coherent systems. We report on monolithic devices with linewidths as low as 138 kHz which operate in a narrow linewidth, single wavelength mode with high sidemode suppression ratio over a wide temperature tuning range of -10 °C < T < 110 °C. A linewidth variation of only 23 kHz was measured at a constant emitted power of 4 mW as the device temperature is varied in the range 0 °C < T < 85 °C., (© 2011 Optical Society of America)

Published
2011
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results