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Ion implantation can modify the properties of materials by changing their electrical, optical, chemical or mechanical properties, and this technique is already in commercial use for production of semiconductor devices. The 65 papers presented at the conference on 'Applications of Ion Beams to Materials' (U. of Warwick, 8-12 Sept 1975) covered the applications of ion beams to semiconductors, insulators, and metals and included studies of radiation damage. All these aspects of the conference proceedings are summarized in this report, which also contains background material for the non-specialist.

This document is the eleventh and final report of a series of summaries of the use and development of the NRL 5-MV Van de Graaff accelerator and associated equipment. The first six were semiannual summaries; and the next five (including the present one) were annual summaries. The present report includes a section on facility development and improvement, including specific reports on (1) the development of new species of ion beams from the Van de Graaff and (2) the construction of a new 200-kV ion implantation system. A section on research highlights includes descriptions of experiments on reactor material neutron damage simulation by heavy-ion bombardment, x-ray emission during bombardment of materials by heavy ions, materials modification by ion implantation, and materials analysis by ion beams. The final section includes brief descriptions of service irradiations for scientists outside the branch., See also report dated Jul 75, AD-A014 507.

In the Cooperative Radiation Effects Simulation Program, a number of nickel alloys (primarily Ni-Al, but there were three dilute-solution alloys containing separately 1 at.% of V, Ti, or Cu) were irradiated with 2.8-MeV58Ni(+)ions at dose rates from .0007 dpa/sec to .07 dpa/sec with the targets at temperatures from 525C to 725C. In the ion-solid interactions program, projectile ions of S, Ar, Ca, Ni, and Kr from 2.0 to 7.8 MeV have been used to bombard targets of Al, and the resulting Al K alpha spectra have been measured; and 4-MeV S ions have been used to bombard targets of Al, Si, GaP, KCl, Ca, and Ti, and the resulting S K alpha spectra have been measured. In another part of this program, ion-excited XUV radiation has been measured when various ions from Al to Ar collide with various target atoms from Be to Ni. Ion-implantation has been studied as an alternate means of doping SiC with Al, and the role of oxygen in the luminescence of SiC crystals has been studied by the implantation of 16O(+) ions to fluences from 10 to the 12th power atoms/sq cm to 10 to the 16th power atoms/sq cm. The use of the charged particle magnetic spectrometer has been studied as a tool in the application of Rutherford backscattering of ions in materials analysis. And the nuclear-resonance technique has been developed as a means of measuring the depth concentration profiles of Al and Na in metal-oxide-semiconductor devices.

This report describes the theory and operation of a program for analysing the data obtained by the scattering of high-energy ions from a sample whose elemental depth concentration profiles are desired. The region so analysed is from the surface to depths of about three micrometers, with a depth resolution of about 30 nm near the surface. The program, written in an enhanced BASIC system language for a desktop computer, is designed for users who are specialists in materials sciences, such as metallurgy of semiconductor device technology, rather than in ion beam technology. The program is highly interactive in the following ways: (i) the user exerts direct control over program flow by means of event-initiated branching, (ii) the computer communicates with the user at the user's natural level (two or three dimensions) vice the computer's natural level (one dimension), and (iii) about 99 percent of the program lines are dedicated to input/output operations and error inhibition and handling. Keywords: Ion beams, Scattering, Computer programs, Basic programming language, Ion scattering, High energy, Ions., Includes envelope with one microfiche insert.

The observation of some "anomalies" in the behavior of gamma-ray resonances induced by hydrogen molecular ion beams has led to an exhaustive investigation of these and other new anomalies, including some involving proton beams. Most of the observations have been made with respect to the 992-KEV resonance in the Al27 (proton, gamma) Si28 reaction, but the following have also been used: the 1317-KEV resonance in the same reaction, the 1747-KEV resonance in the C13 (proton, gamma) N14 reaction, the 1424-KEV resonance of the Ni58 (proton, gamma) Cu59 reaction, and the 1843-KEV resonance in the same reaction.