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This paper explores the fundamental structural origins of the 0.7 eV band emission peak, known as D07. The increased attention on these d-band emission lines originates mainly from the correlation between crystal defect and the intensified recombination of less dominant charge carriers. This association holds substantial importance, impacting not just the electronics sector but also raising concerns about reduced efficiency in silicon solar cells. By employing hyperspectral photoluminescence imaging, we pinpointed regions manifesting high D07 peak emissions on a microscopic scale. Subsequently, we conducted a structural investigation utilizing scanning electron microscopy and electron backscatter diffraction. Following this, we used a focused ion beam to extract areas of interest, allowing for a detailed characterization of the sample using high-resolution scanning transmission electron microscopy at the atomic scale. This approach aids in identifying defects and determining grain boundary orientation. In areas of high D07 band emission, we found Σ 3 { 114 } { 101 } grain boundaries decorated with two-layer fault twin and/or an extrinsic two-layer stacking faults. In addition, density functional theory calculations suggest oxygen impurities as a possibility for substitutional segregation to these types of defects. It is therefore plausible that the D07 line might be attributed to stacking faults featuring oxygen agglomerates. [ABSTRACT FROM AUTHOR]

This study investigates spectral daylight quality measured in a classroom within a time span of 30-minutes under clouded sky conditions. There is a characteristic difference between vertical and horizontal measured values, where the traditional vertical measurements tend to have greater peak wavelength irradiance reduction. The findings show the importance of considering multi-directional views when considering visual and non-visual light effects. The study indicates that spectral variations and spatiality should be considered when evaluating daylight, in contrast to the static methods commonly used to evaluated the quality of daylight in buildings. The study underscores the need for simulation tools and material databases to enhance the realism of spectral simulations and ultimately contribute to a more effective approach to indoor daylight quality, prioritizing occupant well-being.

Defects in high performance multi-crystalline silicon wafers can be detrimental to the lifetime of the solar cell. It is, therefore, important to study and understand the underlying structure and chemical elements present at these defective areas in order to suppress them. The underlying cause of the D-band emission line " v e r y i n t e n s e D 3 " (VID3) has not yet been understood, although many theories have been proposed. In this paper, we have investigated the underlying causes of the d-band emission peak VID3 by hyperspectral photoluminescence imaging, scanning electron microscopy, electron backscatter diffraction, scanning transmission electron microscopy, and density functional theory (DFT) to understand the defect structure in areas of a VID3 emission peak in more detail. We found a high VID3 peak intensity at sub-grain and Σ 3 twin boundaries bordering to grains with a small misorientation, which suggests higher stress in these regions. Defects close to the twin boundary indicate a light element dopant in the area, such as oxygen. DFT calculations show that oxygen is prone to segregate to this boundary. [ABSTRACT FROM AUTHOR]

We present the discovery and monitoring of the optical transient (OT) associated with GRB 020410. The fading OT was found by Hubble Space Telescope (HST) observations taken 28 and 65 days after burst at a position consistent with the X-ray afterglow. Subsequent re-examination of early ground based observations revealed that a faint OT was present 6 hours after burst, confirming the source association with GRB 020410. A deep non-detection after one week requires that the OT re-brightened between day 7 and day 28, and further late timeHST data taken approximately 100 days after burst imply that it is very red (F_nu proportional to nu-2.7). We compare both the flux and color of the excess with supernova models and show that the data are best explained by the presence of a Type I b/c supernova at a redshift z approx. equal 0.5, which occurred roughly coincident with the day of GRB.

In silicon crystals manufactured by the Czochralski method, oxygen is incorporated as a contaminant originating primarily from dissolution of the quartz crucible used to contain the molten silicon feedstock. The oxygen can be found either as interstitials, agglomerates, or as oxide particles. Particular kinds of agglomerates are known to lead to the formation of thermal donors—electronic states in the bandgap of the silicon base material. These can act as sites for recombination of excited charge carriers and are called thermal donors due to their ability to inject two electrons into the conduction band of silicon by thermal excitation, leading to enhanced electrical conductivity. Neither of these features are desirable in Cz‐Si manufacture. Herein, the behavior of thermal donors as a function of the pull speed, and the position in the ingot, is investigated. Thermal treatment is provided, first for the formation of thermal donors and then for their removal. The aim is to investigate methods for minimalizing their incorporation in the crystal in the first place and then how they can be removed. Hyperspectral imaging and spectroscopy combined with Fourier‐transform infrared spectroscopy are used. [ABSTRACT FROM AUTHOR]