Search

This work focuses on the generation of ferromagnetism at the surface of anatase TiO2 films by low-energy ion irradiation. Controlled Ar+-ion irradiation resulted in a thin (∼10) nm ferromagnetic surface layer. The intrinsic origin and robustness of the magnetic order has been characterized by x-ray magnetic circular dichroism at room temperature revealing that a Ti band is spin-polarized. These results, together with density functional theory calculations, indicate that Ti vacancy-interstitial pairs are responsible for the magnetic order. Superconducting quantum interference device measurements show the existence of a perpendicular magnetic anisotropy and a low remanent magnetization. Magnetic force microscopy reveals that this low remanence is due to oppositely aligned magnetic domains with magnetization vectors normal to the main surface. The weak domain-wall pinning, the magnetic anisotropy, together with the simplicity of the preparation method, open up interesting possibilities for future applications. As an example, single domain patterns of ∼1μm width and several μm length can be easily prepared.

The properties of sputtered and scattered ions are studied for ion beam sputtering of Si by bombardment with noble gas ions. The energy distributions in dependence on ion beam parameters (ion energy: 0.5-1 keV; ion species: Ne, Ar, Xe) and geometrical parameters (ion incidence angle, polar emission angle, and scattering angle) are measured by means of energy-selective mass spectrometry. The presence of anisotropic effects due to direct sputtering and scattering is discussed and correlated with process parameters. The experimental results are compared to calculations based on a simple elastic binary collision model and to simulations using the Monte-Carlo code sdtrimsp. The influence of the contribution of implanted primary ions on energy distributions of sputtered and scattered particles is studied in simulations. It is found that a 10% variation of the target composition leads to detectable but small differences in the energy distributions of scattered ions. Comparison with previously reported data for other ion/target configurations confirms the presence of similar trends and anisotropic effects: The number of high-energy sputtered ions increases with increasing energy of incident ions and decreasing scattering angle. The effect of the ion/target mass ratio is additionally investigated. Small differences are observed with the change of the primary ion species: The closer the mass ratio to unity, the higher the average energy of sputtered ions. The presence of peaks, assigned to different mechanisms of direct scattering, strongly depends on the ion/target mass ratio.

Infrared spectroscopic ellipsometry in the spectral range from ω=360 cm-1 to ω=1500 cm-1 and Raman scattering spectroscopy are applied to study the long-wavelength optical phonon modes and dielectric constants of MgxZn1-xO thin films in the composition range 0<=x<=1. The samples were grown by pulsed laser deposition on sapphire substrates. X-ray diffraction measurements of the thin film samples reveal the hexagonal wurtzite crystal structure for x<=0.53 and the cubic rocksalt crystal structure for x>=0.67. A systematic variation of the phonon mode frequencies with Mg-mole fraction x is found for both hexagonal and cubic MgxZn1-xO thin films. The modified random isodisplacement model matches the observed composition dependence of the phonon mode frequencies for the hexagonal structure thin films [J. Chen and W. Z. Shen, Appl. Phys. Lett. 83, 2154 (2003)], whereas a simple linear approximation scheme is sufficient for the cubic structure part. We observe a discontinuous behavior of the transverse optical phonon modes (decrease), and the static and high-frequency dielectric constants (increase) within the phase transition composition region from the wurtzite structure part to the rocksalt structure part. On the contrary, the longitudinal phonon mode parameters increase almost linearly, and upon phase transition the splitting between the transverse and longitudinal modes increases. We associate this discontinuous behavior with the change of the nearest-neighbor coordination number from fourfold (wurtzite structure) to sixfold (rocksalt structure) in our samples and the associated increase in bond ionicity from ZnO to MgO. Accordingly, we propose that the reduced exciton mass parameter should approximately double upon changing from wurtzite to rocksalt crystal structure. [ABSTRACT FROM AUTHOR]

Infrared dielectric function spectra and phonon modes of high-quality, single crystalline, and highly resistive wurtzite ZnO films were obtained from infrared (300-1200 cm[sup -1]) spectroscopic ellipsometry and Raman scattering studies. The ZnO films were deposited by pulsed-laser deposition on c-plane sapphire substrates and investigated by high-resolution x-ray diffraction, high-resolution transmission electron microscopy, and Rutherford backscattering experiments. The crystal structure, phonon modes, and dielectric functions are compared to those obtained from a single-crystal ZnO bulk sample. The film ZnO phonon mode frequencies are highly consistent with those of the bulk material. A small redshift of the longitudinal optical phonon mode frequencies of the ZnO films with respect to the bulk material is observed. This is tentatively assigned to the existence of vacancy point defects within the films. Accurate long-wavelength dielectric constant limits of ZnO are obtained from the infrared ellipsometry analysis and compared with previously measured near-band-gap index-of-refraction data using the Lyddane-Sachs-Teller relation. The ZnO model dielectric function spectra will become useful for future infrared ellipsometry analysis of free-carrier parameters in complex ZnO-based heterostructures. [ABSTRACT FROM AUTHOR]