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8. Luminescence Features of Bulk Crystals β-(GaxAl1–x)2O3.

Author

Dementeva, E. V., Dementev, P. A., Korenko, N. P., Shkarupa, I. I., Kremleva, A. V., Panov, D. Yu., Spiridonov, V. A., Zamoryanskaya, M. V., Bauman, D. A., Odnobludov, M. A., Romanov, A. E., and Bugrov, V. E.

Subjects
CATHODOLUMINESCENCE, LUMINESCENCE, POINT defects, SURFACE topography, CRYSTALS, ANNEALING of crystals
Abstract

This work is devoted to the study of the luminescence inhomogeneity nature of bulk (GaxAl1–x)2O3 samples grown by the Czochralski method. In the study of sample cleavages by the local cathodoluminescence method, regions with different luminescence were observed. To determine the cathodoluminescence contrast nature, we studied the uniformity of the aluminum distribution, the surface topography, and compared the luminescence spectra and the kinetics of emission bands for different regions of the sample. Also, to determine the luminescence bands nature, the crystal was annealed in air at 1000°C. This made it possible to observe the change in luminescence for the same region of the sample. Based on the studies performed, it was concluded that inhomogeneous luminescence is associated with the distribution of point defects. Upon annealing in air, the transformation of nonradiative recombination centers into luminescent centers was observed. [ABSTRACT FROM AUTHOR]

Published
2023
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15. Characterization of lasing regimes of 1.3 µm vertical-cavity surface-emitting lasers based on a short-period InGaAs/InGaAlAs superlattice

Author

Petrenko, A. A., primary, Rochas, S. S., additional, Karachinskii, L. Ya., additional, Babichev, A. V., additional, Novikov, I. I., additional, Gladyshev, A. G., additional, Kolodeznyi, E. S., additional, Kopytov, P. E., additional, Bugrov, V. E., additional, Blochin, S. A., additional, Blochin, A. A., additional, Voropaev, K. O., additional, and Egorov, A. Yu., additional

Published
2021
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21. Luminescence features of bulk crystals β-(Ga-=SUB=-x-=/SUB=-Al-=SUB=-1-x-=/SUB=-)-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=

Author

null Bugrov V. E., null Romanov A. E., null Odnobludov M. A., null Bauman D. A., null Zamoryanskaya M. V., null Spiridonov V. A., null Panov D. Yu., null Kremleva A. V., null Shkarupa I. I., null Korenko N. P., null Dementev P. A., and null Dementeva E. V.

Abstract

This work is devoted to the study of the luminescence inhomogeneity nature of bulk (GaxAl1-x)2O3 samples grown by the Czochralski method. In the study of sample cleavages by the local cathodoluminescence method, regions with different luminescence were observed. To determine the cathodoluminescence contrast nature, we studied the uniformity of the aluminum distribution, the surface topography, and compared the luminescence spectra and the kinetics of emission bands for different regions of the sample. Also, to determine the luminescence bands nature, the crystal was annealed in air at 1000oC. This made it possible to observe the change in luminescence for the same region of the sample. Based on the studies performed, it was concluded that inhomogeneous luminescence is associated with the distribution of point defects. Upon annealing in air, the transformation of nonradiative recombination centers into luminescent centers was observed. Keywords: gallium oxide, luminescence, point defects.

Published
2022
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27. Characterization of lasing regimes of 1.3??µm vertical-cavity surface-emitting lasers based on a short-period InGaAs/InGaAlAs superlattice

Author

Petrenko, A. A., Rochas, S. S., Karachinskii, L. Ya., Babichev, A. V., Novikov, I. I., Gladyshev, A. G., Kolodeznyi, E. S., Kopytov, P. E., Bugrov, V. E., Blochin, S. A., Blochin, A. A., Voropaev, K. O., and Egorov, A. Yu.

Abstract

Lasing regimes of 1.3 µm vertical-cavity surface-emitting lasers (VCSELs) based on a short-period In_0.57Ga_0.43As/In_0.53Ga_0.27Al_0.2As superlattice and two Al_0.9Ga_0.1As/GaAs distributed Bragg reflectors on a GaAs substrate were characterized in this study. VCSEL crystals were mounted on crystal holders with a radio frequency SMA connector and an optical fiber with ferrule connector (FC) for investigation. Current–voltage and output-power–current characteristics, optical and radio frequency spectra, and polarization stability of laser emission were experimentally investigated in the pump current range of 0–14 mA. The threshold current of the studied VCSELs was established to be 1.7 mA. The maximum output optical power at the output of the optical fiber of the VCSEL based on a short-period In_0.57Ga_0.43As/In_0.53Ga_0.27Al_0.2As superlattice and the current-induced emission wavelength shift were demonstrated to be 1.34 mW and 0.5 nm/mA, respectively. The small-signal modulation frequency was in the GHz range. The investigated VCSELs can be used in the development of radio photonic devices for telecommunications. Further improvement of the static and dynamic properties of VCSELs is possible by optimizing the design of the short-period superlattice and buried tunnel junction.

Published
2021

28. Elemental and Structural Mapping of Czochralski-Grown Bulk (AlxGa1 –x)2O3 Crystals.

Author

Bauman, D. A., P'yankova, L. A., Kremleva, A. V., Spiridonov, V. A., Panov, D. Yu., Zakgeim, D. A., Bakhvalov, A. S., Odnoblyudov, M. A., Romanov, A. E., and Bugrov, V. E.

Subjects
X-ray fluorescence, CRYSTALS, SCANNING electron microscopy, X-ray diffraction
Abstract

The aluminum distribution in the surface layer of an (AlxGa1 –x)2O3 crystal grown on a sapphire seed by the Czochralski method has been studied using X-ray fluorescence and X-ray diffraction mapping and scanning electron microscopy. It is shown that the aluminum distribution correlates with a change in the physical broadening of the diffraction maxima of the (h00) plane system of the crystal and is related to a distance from the seeding zone. [ABSTRACT FROM AUTHOR]

Published
2021
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30. Misfit Stress Relaxation in α-Ga2O3/α-Al2O3Heterostructures via Formation of Misfit Dislocations

Author

Smirnov, A. M., Kremleva, A. V., Sharofidinov, Sh. Sh., Bugrov, V. E., and Romanov, A. E.

Abstract

Abstract: A theoretical model of misfit stress relaxation in film/substrate α-Ga2O3/α-Al2O3heterostructures with allowance for lattice anisotropy of heterostructure materials is proposed. Nucleation of misfit dislocations as a result of basal or prismatic slip in α-Ga2O3/α-Al2O3heterostructures with different film orientations is considered. Dependences of critical thickness hc(above this thickness nucleation of misfit dislocations is favorable) on angle ϑ between the polar c-axis and the normal to the film growth plane for α‑Ga2O3/α-Al2O3heterostructures are obtained. It is shown that consideration of elastic constant C14in these models of relaxation in α-Ga2O3/α-Al2O3heterostructures is unnecessary.

Published
2021
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32. AUGER RECOMBINATION IN QUANTUM WELL LASER WITH PARTICIPATION OF ELECTRONS IN WAVEGUIDE REGION.

Author

Karpova, A. A., Samosvat, D. M., Zegrya, A. G., Zegrya, G. G., and Bugrov, V. E.

Subjects
ELECTRONS, QUANTUM wells, COULOMB functions, SEMICONDUCTORS, CRYSTAL structure
Abstract

A new mechanism of nonradiative recombination of nonequilibrium carriers in semiconductor quantum wells is suggested and discussed. For a studied Auger recombination process the energy of localized electron-hole pair is transferred to barrier carriers due to Coulomb interaction. The analysis of the rate and the coefficient of this process is carried out. It is shown, that there exists two processes of thresholdless and quasithreshold types, and thresholdless one is dominant. The coefficient of studied process is a non-monotonous function of quantum well width having maximum in region of narrow quantum wells. Comparison of this process with CHCC process shows that these two processes of nonradiative recombination are competing in narrow quantum wells, but prevail at different quantum well widths. [ABSTRACT FROM AUTHOR]

Published
2018
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34. Generation of the second harmonic in ridge waveguides formed in periodically poled lithium niobate

Author

Dudelev, V V, Akhmatkhanov, A R, Greshnyakov, E D, Abdulrazak, S Kh, Bugrov, V E, Kognovitskaya, E A, Kuchinskii, V I, Shur, V Ya, and Sokolovskii, G S

Abstract

Generation of the second harmonic of semiconductor laser radiation in the IR range (980-1140 nm) in ridge waveguides with a large refractive index step, formed in periodically poled nonlinear LiNbO3 crystals, is demonstrated. Ridge waveguides have been prepared by precise cutting using a diamond microsaw. Spectral dependences of the SHG power and intensity distributions in the near field of second harmonic and pump radiations have been measured. The results obtained indicate good prospects of designing tunable laser radiation sources in the visible range due to the SHG in ridge waveguides formed in periodically poled nonlinear crystals under semiconductor laser pumping.

Published
2018

35. Luminescence properties of gallium nitride layers grown on silicon carbide substrates by gas-phase epitaxy in a chloride system.

Author

Zubrilov, A. S., Mel’nik, Yu. V., Tsvetkov, D. V., Bugrov, V. E., Nikolaev, A. E., Stepanov, S. I., and Dmitriev, V. A.

Subjects
GALLIUM nitride, LUMINESCENCE, SILICON carbide, EPITAXY
Abstract

The luminescence properties of undoped epitaxial layers of gallium nitride grown on silicon carbide substrates by gas-phase epitaxy in a chloride system have been investigated. An edge band (361 nm, 96 K) and defect bands (380, 430, 560 nm, 96 K) were recorded in the photo- and cathodoluminescence spectra. It was observed that the parameters of the edge and defect luminescence bands for the GaN layers studied do not depend on the crystalline perfection of the substrate, but rather they are determined by the growth conditions, specifically, the position of the sample in the reactor. It is shown that there exists a characteristic symmetry of the distribution of the luminescence properties of a layer along the surface of the samples relative to the direction of the gas flow in the reactor. A correlation is established between the parameters of the edge and blue luminescence bands and the density of the electrically-active impurity in the epitaxial layer. [ABSTRACT FROM AUTHOR]

Published
1997
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37. Luminescence Features of Bulk Crystals β-(GaxAl1–x)2O3.

Author

Dementeva, E. V., Dementev, P. A., Korenko, N. P., Shkarupa, I. I., Kremleva, A. V., Panov, D. Yu., Spiridonov, V. A., Zamoryanskaya, M. V., Bauman, D. A., Odnobludov, M. A., Romanov, A. E., and Bugrov, V. E.

Subjects
*CATHODOLUMINESCENCE, *LUMINESCENCE, *POINT defects, *SURFACE topography, *CRYSTALS, *ANNEALING of crystals
Abstract

This work is devoted to the study of the luminescence inhomogeneity nature of bulk (GaxAl1–x)2O3 samples grown by the Czochralski method. In the study of sample cleavages by the local cathodoluminescence method, regions with different luminescence were observed. To determine the cathodoluminescence contrast nature, we studied the uniformity of the aluminum distribution, the surface topography, and compared the luminescence spectra and the kinetics of emission bands for different regions of the sample. Also, to determine the luminescence bands nature, the crystal was annealed in air at 1000°C. This made it possible to observe the change in luminescence for the same region of the sample. Based on the studies performed, it was concluded that inhomogeneous luminescence is associated with the distribution of point defects. Upon annealing in air, the transformation of nonradiative recombination centers into luminescent centers was observed. [ABSTRACT FROM AUTHOR]

Published
2023
Full Text
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