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Metallic amorphous ferrimagnets derived from alloying 3d transition metals with 4f electron rare earths host fascinating effects of compensation between the 3d and 4f magnetic sublattices. Here, a detailed study of anisotropic magnetoresistance (AMR), planar Hall effect (PHE) and anomalous Hall effect (AHE) are reported on a series of CoHo thin films over a wide field temperature phase space. Close to magnetic compensation temperature, the AHE loops show a double sign reversal and signatures of spin flop transition at higher fields. The AMR and PHE also display strong deviations from the classical angular dependence seen in soft ferromagnets like permalloy as the angle between in-plane current and magnetic field is scanned from 0 to 360 degrees. It is argued that the non zero orbital angular momentum of Ho ions in the lattice and stabilization of bubble domains below magnetic saturation may be responsible for such features. Direct imaging of magnetic textures with X ray photoelectron microscopy shows formation of stripe domain patterns in the regime of sublattice compensation. Such stripes are likely to transform into magnetic bubbles before full saturation is reached in a large magnetic field.

Antiferromagnetic Weyl semimetals with spin chirality offer excellent platforms to address the Berry phase physics, which manifests prominently in several of their electro-optical and electro-magnetic responses including as a large anomalous Hall effect (AHE) and spin Hall conductivity. Here, we report measurements of magneto-transport in c-axis textured Mn3Sn thin films grown on the [111] plane of single crystal MgO. At room temperature, these films display a weak uncompensated magnetic moment of \approx 0.12 \micro_{B}/f.u. in the basal plane and a longitudinal resistivity (\rho_{xx}) close to \approx 3.8 \micro\Omega.m. A residual resistivity ration (\rho_{xx} (300 K)/\rho_{xx} (2 K)) of \approx 3.92 further indicates the high quality of the films. While at 300 K a weak AHE together with field-linear Hall resistivity (\rho_{xy}) is observed in magnetic fields (H) applied perpendicular to the Kagome planes, the temperature (T) dependence of \rho_{xy} shows prominent signatures of three magnetic phases in the temperature regime of 2 to 300 K. The \rho_{xy} also derives a non-trivial topological contribution (\r{ho}THE \approx 1n\Omega.m) in the spin glass phase which appears at T \geq 100 K. Our measurements of anisotropic magnetoresistance (AMR) and planar Hall effect (PHE) over a wide H-T phase space reveal the hitherto unseen effects in the three magnetic phases of Mn3Sn. While the AMR and PHE are negative in the inverse triangular spin phase (250 K \geq T \geq TN), the helical phase (100 \geq T \geq 250 K) is devoid of anisotropic in-plane resistivity, and the spin glass phase shows a sign reversal of AMR with the increasing magnetic field. The origin of this sign change in AMR/PHE is attributed to the emergence of topologically protected spin textures like skyrmions where the fictitious effective magnetic field is estimated to be \approx 4.4 tesla.

Different classes of low-dimensional superconducting systems exhibit an inhomogeneous filamentary superconducting condensate whose macroscopic coherence still needs to be fully investigated and understood. Here we present a thorough analysis of the superfluid response of a prototypical filamentary superconductor embedded in a {two-dimensional} metallic matrix. By mapping the system into an exactly solvable random impedance network, we show how the dissipative (reactive) response of the system non-trivially depends on both the macroscopic and microscopic characteristics of the metallic (superconducting) fraction. We compare our calculations with resonant-microwave transport measurements performed on LaAlO$_3$/SrTiO$_3$ heterostructures over an extended range of temperatures and carrier densities finding that the filamentary character of superconductivity accounts for unusual peculiar features of the experimental data., Comment: 22 pages, 7 figures

The enhancement of interfacial Dzyaloshinskii-Moriya Interaction (DMI) in magnetic multilayers results in the stabilization of topological spin textures like chiral domain walls and skyrmions. Here we report on the evaluation of interface-driven magnetic interactions in a uniquely designed multilayer where each magnetic layer of two AFM coupled sublattices of 3d and 4f moments is sandwiched between the layers of \beta-tungsten and holmium whose spin Hall angles are large but opposite in sign. The atomic and magnetic periodicity of these multilayers is established by polarized neutron reflectivity measurements and the presence of a labyrinth domain spin texture of zero remanence with x-ray photoelectron microscopy. Measurements of the Hall resistivity (\rho_{xy}(T, H)) together with static magnetization (M(T,H)) over a broad range of temperature (T) and magnetic field (H) indicate impending compensation between 3d and 4f sublattices at T>350 K. These multilayers are characterized by a small (0.04 %) but positive magnetoresistance indicative of interface enhance scattering and a large (40 n\Omega.m) and negative anomalous \rho_{xy}(T,H) which results from a parallel alignment of 4f moments with the external magnetic field. No distinct scaling is seen between \rho_{xy}(T,H), \rho_{xx}(T, H) and M(T,H) at temperatures above 200K where the magnetization develops out-of-plane anisotropy. The field scans of \rho_{xy} at T>200K show a distinct cusp in the vicinity of magnetic saturation. These Hall data have been analyzed in the framework of a model where a distinct topological contribution to \rho_{xy} rides over the anomalous Hall resistivities of the 3d and 4f magnetic sublattices. It is suggested that this apparent topological effect results from an interfacial DMI and dominates \rho_{xy}(T,H) in the temperature regime where the 3d and 4f lattices are nearly compensated., Comment: 7 figures

3-D topological insulators (TI) with large spin Hall conductivity have emerged as potential candidates for spintronic applications. Here, we report spin to charge conversion in bilayers of amorphous ferromagnet (FM) Fe_{78}Ga_{13}B_{9} (FeGaB) and 3-D TI Bi_{85}Sb_{15} (BiSb) activated by two complementary techniques: spin pumping and ultrafast spin-current injection. DC magnetization measurements establish the soft magnetic character of FeGaB films, which remains unaltered in the heterostructures of FeGaB-BiSb. Broadband ferromagnetic resonance (FMR) studies reveal enhanced damping of precessing magnetization and large value of spin mixing conductance (5.03 x 10^{19} m^{-2}) as the spin angular momentum leaks into the TI layer. Magnetic field controlled bipolar dc voltage generated across the TI layer by inverse spin Hall effect is analyzed to extract the values of spin Hall angle and spin diffusion length of BiSb. The spin pumping parameters derived from the measurements of the femtosecond light-pulse-induced terahertz emission are consistent with the result of FMR. Kubo-Bastin formula and tight-binding model calculations shed light on the thickness-dependent spin-Hall conductivity of the TI films, with predictions that are in remarkable agreement with the experimental data. Our results suggest that room temperature deposited amorphous and polycrystalline heterostructures provide a promising platform for creating novel spin orbit torque devices., Comment: 9 figures

Measurements of frequency dependent ferromagnetic resonance (FMR) and spin pumping driven dc voltage (V_{dc}) are reported for amorphous films of Fe_{78}Ga_{13}B_{9} (FeGaB) alloy to address the phenomenon of self-induced inverse spin Hall effect (ISHE) in plain films of metallic ferromagnets. The V_{dc} signal, which is antisymmetric on field reversal, comprises of symmetric and asymmetric Lorentzians centered around the resonance field. Dominant role of thin film size effects is seen in setting the magnitude of static magnetization, V_{dc} and dynamics of magnetization precession in thinner films (\leq 8 nm). The film thickness dependence of magnetization parameters indicates the presence of a magnetically disordered region at the film-substrate interface, which may promote preferential flow of spins generated by the precessing magnetization towards the substrate. However, the V_{dc} signal also draws contributions from rectification effects of a \approx 0.4 \% anisotropic magnetoresistance and a large (\approx 54 n\Omega.m) anomalous Hall resistivity (AHR) of these films which ride over the effect of spin-orbit coupling driven spin-to-charge conversion near the film-substrate interface. We have addressed these data in the framework of the existing theories of electrodynamics of a ferromagnetic film subjected to radio-frequency field in a coplanar waveguide geometry. Our estimation of the self-induced ISHE for the sample with 54 n\Omega.m AHR shows that it may contribute significantly (\approx 90\%) to the measured symmetric voltage. This study is expected to be very useful for fully understanding the spin pumping induced dc voltages in metallic ferromagnets with disordered interfaces and large anomalous Hall effect., Comment: 9 figures

Thin films of $ \beta- $tungsten host superconductivity in the presence of strong spin-orbit coupling. This non-equilibrium crystalline phase of tungsten has attracted considerable attention in recent years due to its giant spin Hall effect and the potential promise of exotic superconductivity. However, more than 60 years after its discovery, superconductivity in this material is still not well understood. Using time-domain THz spectroscopy, we measure the frequency response of the complex optical conductivity of $ \beta- $tungsten thin film with a T$_c$ of 3.7 K in its superconducting state. At temperatures down to 1.6 K, we find that both the superconducting gap and the superfluid spectral weight are much smaller than that expected for a weakly coupled superconductor given the T$_c$. The conclusion of a small gap holds up even when accounting for possible inhomogeneities in the system, which could come from other crystalline forms of tungsten (that are not superconducting at these temperatures) or surface states on $ \beta- $tungsten grains. Using detailed X-ray diffraction measurements, we preclude the possibility of significant amount of other tungsten allotropes, strongly suggesting the topological surface states of $ \beta- $tungsten play the role of inhomogeneity in these films. Our observations pose a challenge and opportunity for a theory of strongly anisotropic normal metals with strong spin-orbit coupling to describe., Comment: 5 pages, 6 figures and supplementary info

Solid 4He may acquire superfluid characteristics due to the frustration of the solid phase at grain boundaries. Here, we show that an analogous effect occurs in systems with competition among charge-density-waves (CDWs) and superconductivity in the presence of disorder, as cuprate or dichalcogenide superconductors. The CDWs breaks apart in domains with topologically protected filamentary superconductivity (FSC) at the interfaces. Transport experiments carried out in underdoped cuprates with the magnetic field acting as a control parameter are shown to be in excellent agreement with the theoretical expectation. At high temperature and low fields we find a transition from CDWs to fluctuating superconductivity, weakly affected by disorder, while at high field and low temperature the protected filamentary superconducting phase appears in close analogy with "glassy" supersolid phenomena in 4He.

One of the hallmarks of the Berezinskii-Kosterlitz-Thouless (BKT) transition in two-dimensional (2D) superconductors is the universal jump of the superfluid density, that can be indirectly probed via the non-linear exponent of the current-voltage $IV$ characteristics. Here, we compare the experimental measurements of $IV$ characteristics in two cases, namely NbN thin films and SrTiO$_3$-based interfaces. While the former display a paradigmatic example of BKT-like non-linear effects, the latter do not seem to justify a BKT analysis. Rather, the observed $IV$ characteristics can be well reproduced theoretically by modelling the effect of mesoscopic inhomogeneity of the superconducting state. Our results offer an alternative perspective on the spontaneous fragmentation of the superconducting background in confined 2D systems., Comment: Final version, as published

We report on the recrystallization of 200 nm thick as-grown Yttrium Iron Garnet (Y_3.4 Fe_4.6 O_12) films on (111) face of Gadolinium Gallium Garnet (GGG) single crystals by post-deposition annealing. Epitaxial conversion of the as-grown microcrystalline YIG films was seen after annealing at 800oC for more than 30 minutes both in ambient oxygen as well as in air. The as-grown oxygen annealed samples at 800oC for 60 minutes crystallize epitaxially and show excellent figure-of-merit for saturation magnetization (MS = 3.3 {\mu}B/f.u., comparable to bulk value) and coercivity (HC ~ 1.1 Oe). The ambient air annealing at 800oC with a very slow rate of cooling (2oC/min) results in a double layer structure with a thicker unstrained epitaxial top layer having the MS and HC of 2.9 {\mu}B/f.u. and 0.12 Oe respectively. The symmetric and asymmetric Reciprocal space maps of both the samples reveal a locking of the in-plane lattice of the film to the in-plane lattice of substrate, indicating a pseudomorphic growth. The residual stress calculated by sin^2 {\psi} technique is compressive in nature. The lower layer in air annealed sample is highly strained, whereas, the top layer has negligible compressive stress.

The large diversity of exotic electronic phases displayed by two-dimensional superconductors confronts physicists with new challenges. These include the recently discovered quantum Griffith singularity in atomic Ga films, topological phases in proximized topological insulators and unconventional Ising pairing in transition metal dichalcogenide layers. In LaAlO3/SrTiO3 heterostructures, a gate tunable superconducting electron gas is confined in a quantum well at the interface between two insulating oxides. Remarkably, the gas coexists with both magnetism and strong Rashba spin-orbit coupling and is a candidate system for the creation of Majorana fermions. However, both the origin of superconductivity and the nature of the transition to the normal state over the whole doping range remain elusive. Missing such crucial information impedes harnessing this outstanding system for future superconducting electronics and topological quantum computing. Here we show that the superconducting phase diagram of LaAlO3/SrTiO3 is controlled by the competition between electron pairing and phase coherence. Through resonant microwave experiments, we measure the superfluid stiffness and infer the gap energy as a function of carrier density. Whereas a good agreement with the Bardeen-Cooper-Schrieffer (BCS) theory is observed at high carrier doping, we find that the suppression of Tc at low doping is controlled by the loss of macroscopic phase coherence instead of electron pairing as in standard BCS theory. We find that only a very small fraction of the electrons condenses into the superconducting state and propose that this corresponds to the weak filling of a high-energy dxz/yz band, more apt to host superconductivity

We present a study of modulation of spin-orbit interaction (SOI) at the interface of LaTiO$_3$/SrTiO$_3$ by $\delta$-doping with an iso-structural ferromagnetic perovskite LaCoO$_3$. The sheet carrier density at the interface decreases exponentially with $\delta$-doping thickness. We have explored that the spin-orbit scattering time ($\tau_{so}$) can be decreased by nearly 3 orders of magnitude, whereas the inelastic scattering time ($\tau_{i}$) remains almost constant with $\delta$-doping thickness. We have also observed that the $\tau_{i}$ varies almost inversely proportional to temperature and $\tau_{so}$ remains insensitive to temperature, which suggest that the spin relaxation in these interfaces follows D'yakonov-Perel mechanism. The observed in-plane anisotropic magnetoresistance is attributed to the mixing of the spin up and spin down states of d-band at Fermi level due to SOI., Comment: 8 pages, 7 figures

A rather unique feature of the two-dimensional electron gas (2-DEG) formed at the interface between the two insulators LaAlO3 and SrTiO3 is to host both gate-tunable superconductivity and strong spin-orbit coupling. In the present work, we use the disorder generated by Cr substitution of Al atoms in LaAlO3 as a tool to explore the nature of superconductivity and spin-orbit coupling in these interfaces. A reduction of the superconducting Tc is observed with Cr doping consistent with an increase of electron-electron interaction in presence of disorder. In addition, the evolution of spin-orbit coupling with gate voltage and Cr doping suggests a D'Yakonov-Perel mechanism of spin relaxation in the presence of a Rashba-type spin-orbit interaction.

The influence of YBa2Cu3O4 (YBCO) superconductor layer (S-layer) with varying thickness d-YBCO = 20 to 50 nm on the magnetic coupling between two La0.67Ca0.33MnO3 (LCMO) ferromagnet layers (F-layer, thickness d-LCMO = 50 nm) in F/S/F heterostructures (HSs) was investigated by measuring global magnetization (M) in a temperature (T) range = 2 - 300 K and magnetic field (H) range = 0 - 10 kOe. All the HSs were superconducting with critical temperature (Tc) decreasing from = 78 to 36 K with decrease in d-YBCO, whereas the ferromagnetic ordering temperature Tm = 250 K did not change much. Systematically measured M-H loops of all HSs at both T > Tc and T < Tc show three main results- (a) the two step magnetic reversal above Tc converts into a four step reversal below Tc in HSs with d-YBCO >= 30 nm, (b) the magnetic field corresponding to the additional two switching steps and their magnitude show characteristic evolution with T and d-YBCO and (c) the HS with d-YBCO = 20 nm shows radically different behaviour, where the two step magnetic reversal above Tc continues to persist below Tc and converts into a single step reversal at T << Tc. The first two results indicate magnetostatic coupling between the magnetic domains and the vortices across the two F/S interfaces resulting in reversal dynamics different from that deep within the LCMO layers. Whereas, the result c reveals indirect exchange coupling between LCMO layers through the superconducting YBCO layer, which is a clear experimental evidence of coexistence of ferromagnetism and superconductivity in nm scale F/S/F HSs expected theoretically by C.A.R. Sa de Melo (Physica C 387, 17-25 (2003))., Comment: 23 pages, 7 figures, accepted in JPCM

The photoluminescence (PL) spectra of Ar-ion irradiated single crystals of SrTiO3 (STO) excited by the 325 nm line of a He-Cd laser are compared with those of pristine crystals, epitaxial films, and amorphous layers of STO at several temperatures down to 20 K. The 550 eV Ar-beam irradiation activates three distinctly visible PL peaks: blue (~430 nm), green (~550 nm), and infrared (~820 nm) at room temperature, making the photoluminescence multicolored. The abrupt changes in PL properties below ~100 K are discussed in relation with the antiferrodistortive structural phase transition in SrTiO3 from cubic to tetragonal symmetry, which makes it a direct bandgap semiconductor. The photoluminescence spectra are also tuned by an electrostatic gate field in a field-effect transistor geometry. At 20 K, we observed a maximum increase of ~20% in PL intensity under back gating of SrTiO3.

In the vicinity of a phase transition, the order parameter starts fluctuating before vanishing at the critical point. The fluctuation regime, i.e. the way the ordered phase disappears, is a characteristics of a transition, and determines the universality class it belongs to. This is valid for thermal transitions, but also for zero temperature Quantum Phase Transitions (QPT). In the case of superconductivity, the order parameter has an amplitude and a phase, which can both fluctuate according to well identified scenarios. The Ginzburg-Landau theory and its extensions describe the fluctuating regime of regular metallic superconductors, and the associated dynamics of the pair amplitude and the phase. When the system is two-dimensional and/or very disordered, phase fluctuations dominate. Here, we address the possibility that a new type of fluctuations occurs in superconductors with an anomalous dynamics. In particular we show that the superconducting to metal QPT that occurs upon changing the gate voltage in two-dimensional electron gases at LAO/STO and LTO/STO interfaces displays anomalous scaling properties, which can be explained by density driven superconducting critical fluctuations. A Finite Size Scaling (FSS) analysis reveals that the product z.nu (nu is the correlation length exponent and z the dynamical critical one) is z.nu = 3/2. We argue that critical superconducting fluctuations acquire an anomalous dynamics with z=3, since they couple to density ones in the vicinity of a spontaneous electronic phase separation, and that nu=1/2 corresponds to the mean-field value. This approach strongly departs from the conventional z=1 scenario in disordered 2D systems based on long-range Coulomb interactions with dominant phase fluctuations. This scenario can explain recent data in LSCO ultra-thin films, and apply to a whole class of two-dimensional superconductors., Comment: 11 pages, 4 figures

A metallic surface is realized on stoichiometric and insulating (100) SrTiO$_3$ by Ar$^+$ - ion irradiation. The sheet carrier density and Hall mobility of the layer are $\sim$$4.0$ $\times$ $10^{14}$ $/cm^2$ and $\sim$$2$ $\times$ $10^3$ $cm^2/Vs$ respectively at 15 K for the irradiation dose of $\sim$4.2 $\times 10^{18}$ $ions/cm^2$. These samples display ultraviolet light sensitive photoconductivity (PC) which is enhanced abruptly below the temperature ($\approx$100 K) where SrTiO$_3$ crystal undergoes an antiferrodistortive cubic-to-tetragonal ($O_h^1$ $\rightarrow$ $D_{4h}^{18}$) structural phase transition. This behaviour of PC maps well with the temperature dependence of dielectric function and electric field induced conductivity. The longevity of the PC-state also shows a distinct change below $\approx$100 K. At $T > 100$ K its decay is thermally activated with energy barrier of $\approx$36 meV, whereas at $T < 100$ K it becomes independent of temperature. We have examined the effect of electrostatic gating on the lifetime of the PC state. One non-trivial result is the ambient temperature quenching of the photo-conducting state by the negative gate field. This observation opens avenues for designing a solid state photo-electric switch. The origin and lifetime of the PC-state are understood in the light of field effect induced band bending, defect dynamics and thermal relaxation processes.

We report the observation of a magnetic field assisted transient superconducting state in the two dimensional electron gas existing at the interface of LaAlO$_3$/SrTiO$_3$ heterostructures. This metastable state depends critically on the density of charge carriers in the system. It appears concomitantly with a Lifshitz transition as a consequence of the interplay between ferromagnetism and superconductivity and the finite relaxation time of the in-plane magnetization. Our results clearly demonstrate the inherently metastable nature of the superconducting state competing with a magnetic order in these systems. The co-existence of superconductivity and ferromagnetism in the conducting electronic layer formed at the interface of insulating oxides has thrown up several intriguing and as yet unanswered questions. An open question in this field is the energetics of the interplay between these two competing orders and the present observation goes a long way in understanding the underlying mechanism., Comment: 11 pages, 14 figures

We report a gradual suppression of the two-dimensional electron gas (2DEG) at the LaAlO3/SrTiO3 interface on substitution of chromium at the Al sites. The sheet carrier density at the interface (ns) drops monotonically from 2.2x10(14) cm-2 to 2.5x10(13) cm-2 on replacing nearly 60 percent of Al sites by Cr and the sheet resistance (Rs) exceeds the quantum limit for localization (h/2e2) in the concentrating range 40 to 60 percent of Cr.

Measurements of magneto-thermopower (S(H, T)) of interfacial delta doped LaTiO$_3$/SrTiO$_3$ (LTO/STO) heterostructure by an iso-structural antiferromagnetic perovskite LaCrO$_3$ are reported. The thermoelectric power of the pure LTO/STO interface at 300 K is $\approx$ 118 $\mu$V/K, but increases dramatically on $\delta$-doping. The observed linear temperature dependence of S(T) over the temperature range 100 K to 300 K is in agreement with the theory of diffusion thermopower of a two-dimensional electron gas. The S(T) displays a distinct enhancement in the temperature range (T $<$ 100 K) where the sheet resistance shows a Kondo-type minimum. We attributed this maximum in S(T) to Kondo scattering of conduction electron by localized impurity spins at the interface. The suppression of S by a magnetic field, and the isotropic nature of the suppression in out-of-plane and in-plane field geometries further strengthen the Kondo model based interpretation of S(H, T)., Comment: 6 pages, 4 figures, Accepted in Phys. Rev. B

We report the effect of $\delta$-doping at LaAlO$_{3}$/SrTiO$_{3}$ interface with LaMnO$_{3}$ monolayers on the photoconducting (PC) state. The PC is realized by exposing the samples to broad band optical radiation of a quartz lamp and 325 and 441 nm lines of a He-Cd laser. Along with the significant modification in electrical transport which drives the pure LaAlO$_{3}$/SrTiO$_{3}$ interface from metal-to-insulator with increasing LaMnO$_{3}$ sub-monolayer thickness, we also observe an enhancement in the photo-response and relaxation time constant. Possible scenario for the PC based on defect-clusters, random potential fluctuations and large lattice relaxation models have been discussed. For pure LaAlO$_{3}$/SrTiO$_{3}$, the photoconductivity appears to originate from inter-band transitions between Ti-derived $3d$ bands which are $e_{g}$ in character and O 2p - Ti $t_{2g}$ hybridized bands. The band structure changes significantly when fractional layers of LaMnO$_{3}$ are introduced. Here the Mn $e_{g}$ bands ($\approx1.5$ eV above the Fermi energy) within the photo-conducting gap lead to a reduction in the photo-excitation energy and a gain in overall photoconductivity., Comment: 9 pages, 5 figures

We present a study of delta ($\delta$) doping at LaTiO$_3$/SrTiO$_3$ (LTO/STO) interface with iso-structural antiferromagnetic perovskite LaCrO$_3$ (LCO) that dramatically alters the properties of the two dimensional electron gas (2-DEG) at the interface. The effects include a reduction in sheet-carrier density, prominence of the low temperature resistivity minimum, enhancement of weak antilocalization below 10 K and observation of a strong anisotropic magnetoresistance (MR). The positive and negative MR for out-of-plane and in-plane field respectively and the field and temperature dependencies of MR suggest Kondo scattering by localized Ti$^{3+}$ moments renormalized by spin-orbit interaction at T $<$ 10 K, with the increased $\delta$-layer thickness. Electron energy loss spectroscopy and density functional calculations provide convincing evidence for blocking of electron transfer from LTO to STO by the $\delta$-layer., Comment: 6 pages, 4 figures, To be appear in Phys. Rev. B (Rapid Communication)

Proximity coupling and magnetic switching dynamics are shown to be correlated in bilayers (B) of fully spin polarized ferromagnet (F) Co2FeSi and superconductor (S) NbN. The upper critical field derived from resistivity measurements shows a dimensional crossover with a reduced effective thickness of the S layer. At temperatures (T) << superconducting Tc, the measured M-H loops show two step switching; one at T-independent value ~ 7 Oe and other at strongly T-dependent value becoming very large ~ 1 kOe at 2 K. These results reveal induced ferromagnetism in S-layer at the S/F interface with vortex pinning influenced dynamics., Comment: 11 pages, 4 figures; Appl. Phys. Lett. to appear

The influence of epitaxial strain on uniaxial magnetic anisotropy of Co$_{2}$FeSi (CFS) and Co$_{2}$MnSi (CMS) Heusler alloy thin films grown on (001) SrTiO$_3$ (STO) and MgO is reported. The in-plane biaxial strain is susceptible to tune by varying the thickness of the films on STO, while on MgO the films show in-plane easy axis for magnetization (\overrightarrow{M}) irrespective of their thickness. A variational analysis of magnetic free energy functional within the Stoner-Wohlfarth coherent rotation model with out-of-plane uniaxial anisotropy for the films on STO showed the presence of magnetoelastic anisotropy with magnetostriction constant $\approx$ (12.22$\pm$0.07)$\times 10^{-6}$ and (2.02$\pm$0.06)$\times 10^{-6}$, in addition to intrinsic magnetocrystalline anisotropy $\approx$ -1.72$\times 10^{6}$ erg/cm$^{3}$ and -3.94$\times 10^{6}$ erg/cm$^{3}$ for CFS and CMS, respectively. The single-domain phase diagram reveals a gradual transition from in-plane to out-of-plane orientation of magnetization with the decreasing film thickness. A maximum canting angle of 41.5$^{\circ}$ with respect to film plane is predicted for the magnetization of the thinnest (12 nm) CFS film on STO. The distinct behaviour of \overrightarrow{M} in the films with lower thickness on STO is attributed to strain-induced tetragonal distortion., Comment: 5 pages, 4 figures

Driving a two-dimensional superconductor normal by applying a high magnetic field may lead to Cooper pair localization. In this case, there should be a quantum critical point associated with specific scaling laws. Such a transition has been evidenced in a number of low critical temperature superconducting thin films and has been suggested to occur also in high temperature cuprate superconductors. Here we show experimental evidence for two distinct quantum critical regimes when applying perpendicular magnetic fields to underdoped La2-xSrxCuO4 thin films. At intermediate values of the magnetic field (18T-20T), a "ghost" QCP is observed, for which the values of the related critical exponents point towards a fermionic -as opposed to bosonic- scenario. At higher (about 37 T) magnetic field, another QCP is observed, which suggests the existence of either a 2D/3D or a clean/dirty temperature crossover., Comment: arXiv admin note: substantial text overlap with arXiv:1204.3493

Here we investigate LaAlO_3-SrTiO_3 heterostructure with\delta-doping of the interface by LaMnO_3 at less than one monolayer. This doping strongly inhibits the formation of mobile electron layer at the interface. This results in giant increase of the resistance and the thermopower of the heterostructure. Several aspects of this phenomena are investigated. A model to calculate the carrier concentration is presented and effect of doping and detailed temperature dependence is analyzed in terms of model parameters and the weak-scattering theory. The large enhancement of thermopower is attributed to the increased spin and orbital entropy originating from the LaMnO_3 mono-layer.

We report the evolution of magnetic moment as well as magnetic anisotropy with crystalline order in Co$_2$MnSi thin films grown on $(100)$ MgO by pulsed laser deposition. The films become more ordered as the annealing temperature ($T_A$) increases from 400 to 600 $^0$C. The extent of \emph{L}$2_1$ ordering in the films annealed at 600 $^0$C is $\approx 96%$. The static magnetization measurements by vibrating sample magnetometry shows a maximum moment of 4.95 $\mu_B$ per formula unit with low coercivity ($H_C$ $\approx$ 65 Oe) in the films annealed at 600 $^0$C. A rigorous analysis of the azimuthal and polar angle dependent ferromagnetic resonance (FMR) measured at several temperatures allows determination of various anisotropy fields relevant to our system as a function of $T_A$. Finally, we have evaluated the exchange stiffness constant down to 100 K using spin wave modes in FMR spectra. We have also estimated the exchange energies as well as stiffness constant by varying the lattice parameter \emph{ab-initio} using the Korringa-Kohn-Rostoker method., Comment: 7 pages, 7 figures

We report the evolution of crystallographic structure, magnetic ordering and electronic transport in thin films of full-Heusler alloy Co$_2$MnSi deposited on (001) MgO with annealing temperatures ($T_A$). By increasing the $T_A$ from 300$^\circ$C to 600$^\circ$C, the film goes from a disordered nanocrystalline phase to $B2$ ordered and finally to the $L2_1$ ordered alloy. The saturation magnetic moment improves with structural ordering and approaches the Slater-Pauling value of $\approx 5.0 \mu_B$ per formula unit for $T_A$ = 600$^\circ$C. At this stage the films are soft magnets with coercive and saturation fields as low as $\approx$ 7 mT and 350 mT, respectively. Remarkable effects of improved structural order are also seen in longitudinal resistivity ($\rho_{xx}$) and residual resistivity ratio. A model based upon electronic transparency of grain boundaries illucidates the transition from a state of negative $d\rho/dT$ to positive $d\rho/dT$ with improved structural order. The Hall resistivity ($\rho_{xy}$) derives contribution from the normal scattering of charge carriers in external magnetic field, the anomalous effect originating from built-in magnetization and a small but distinct topological Hall effect in the disordered phase. The carrier concentration ($n$) and mobility ($\mu$) have been extracted from the high field $\rho_{xy}$ data. The highly ordered films are characterized by $n$ and $\mu$ of 1.19$\times$ 10$^{29}$ m$^{-3}$ and 0.4 cm$^2V^{-1}s^{-1}$ at room temperature. The dependence of $\rho_{xy}$ on $\rho_{xx}$ indicates the dominance of skew scattering in our films, which shows a monotonic drop on raising the $T_A$. The topological Hall effect is analyzed for the films annealed at 300$^\circ$C. ......, Comment: 10 pages, 9 figures, 1 table

The two-dimensional electron gas at the LaTiO3/SrTiO3 or LaAlO3/SrTiO3 oxide interfaces becomes superconducting when the carrier density is tuned by gating. The measured resistance and superfluid density reveal an inhomogeneous superconductivity resulting from percolation of filamentary structures of superconducting "puddles" with randomly distributed critical temperatures, embedded in a non-superconducting matrix. Following the evidence that superconductivity is related to the appearance of high-mobility carriers, we model intra-puddle superconductivity by a multi-band system within a weak coupling BCS scheme. The microscopic parameters, extracted by fitting the transport data with a percolative model, yield a consistent description of the dependence of the average intra-puddle critical temperature and superfluid density on the carrier density., Comment: 7 pages with 3 figures + supplemental material (4 pages and 5 figures)

Double ring formation on Co2MnSi (CMS) films is observed at electrical breakdown voltage during local anodic oxidation (LAO) using atomic force microscope (AFM). Corona effect and segregation of cobalt in the vicinity of the rings is studied using magnetic force microscopy and energy dispersive spectroscopy. Double ring forma-tion is attributed to the interaction of ablated material with the induced magnetic field during LAO. Steepness of forward bias transport characteristics from the unperturbed region of the CMS film suggest a non equilibrium spin contribution. Such mesoscopic textures in magnetic films by AFM tip can be potentially used for memory storage applications., Comment: 7 pages, 5 figures

Superconductivity (S) and ferromagnetism (F) are probed through transport and magnetization measurements in nanometer scale HoNi$_5$-NbN (F-S) bilayers and HoNi$_5$-NbN-HoNi$_5$ (F-S-F) trilayers. The choice of materials has been made on the basis of their comparable ordering temperatures and strong magnetic anisotropy in HoNi$_5$. We observe the normal state reentrant behavior in resistance vs. temperature plots of the F-S-F structures just below the superconducting transition in the limited range of HoNi$_5$ layer thickness d$_{HN}$ (20 nm $<$ d$_{HN}$ $<$ 80 nm) when d$_{NbN}$ is fixed at $\simeq$ 10 nm. The reentrance is quenched by increasing the out-of-plane (H$_{\perp}$) magnetic field and transport current where as in-plane (H$_{\parallel}$) field of $\leq$ 1500 Oe has no effect on the reentrance. The thermally activated flux flow characteristics of the S, F-S and F-S-F layers reveal a transition from collective pinning to single vortex pinning as we place F layers on both sides of the S film. The origin of the reentrant behavior seen here in the range of 0.74 $\leq$ T$_{Curie}$/T$_C$ $\leq$ 0.92 is attribute to a delicate balance between the magnetic exchange energy and the condensation energy in the interfacial regions of the trilayer., Comment: 13 pages and 5 figures

We study the magnetic field driven Quantum Phase Transition (QPT) in electrostatically gated superconducting LaTiO3/SrTiO3 interfaces. Through finite size scaling analysis, we show that it belongs to the (2+1)D XY model universality class. The system can be described as a disordered array of superconducting islands coupled by a two dimensional electron gas (2DEG). Depending on the 2DEG conductance tuned by the gate voltage, the QPT is single (corresponding to the long range phase coherence in the whole array) or double (one related to local phase coherence, the other one to the array). By retrieving the coherence length critical exponent \nu, we show that the QPT can be "clean" or "dirty" according to the Harris criteria, depending on whether the phase coherence length is smaller or larger than the island size. The overall behaviour is well described by a theoretical approach of Spivak et al., in the framework of the fermionic scenario of 2D superconducting QPT.

The evolution of magnetic domain structure in epitaxial La$_{0.625}$Ca$_{0.375}$MnO$_3$ films on (001) NdGaO$_3$ is monitored as a function of temperature and magnetic field using Magnetic Force Microscopy. We see two distinct regions of magnetic orientational order; one in-plane displaying contrast-less image and the other tilted away from the film plane forming a distinct stripe pattern. A strong domain splitting is observed at the boundary of two regions, which is resilient to reorientation with temperature and magnetic field. We propose a model magnetic free energy functional to explain the mechanism of domain splitting seen in manganite films.

We identify a distinct superconducting phase at the interface of a La$_{1.48}$Nd$_{0.4}$Sr$_{0.12}$CuO$_4$ (LNSCO)/La$_{1.84}$Sr$_{0.16}$CuO$_4$ (LSCO) epitaxial bilayer system using ac screening measurements. A model based on inter-diffusion of quasiparticles and condensate at the interface yields a thickness of $\sim$ 25 nm for the interfacial layer. Two-dimensional superconductivity of the interface layer appears to be governed by Kosterlitz-Thouless-Berezinskii transition. A parallel magnetic field suppresses the superconducting transition temperature of this layer with a pair breaking parameter $\alpha$ varying as $H^2$.

We report enhanced superconductivity in bilayer thin films consisting of superconducting La$_{1.6-x}$Nd$_{0.4}$Sr$_{x}$CuO$_{4}$ with 0.06 $\leq x<$ 0.20 and metallic but non-superconducting La$_{1.55}$Sr$_{0.45}$CuO$_{4}$. These bilayers show a maximum increase in superconducting transition temperature ($T_c$) of more than 200% for $x$ = 0.06 while no change in $T_c$ is observed for the bilayers with $x\geq$ 0.20. The analysis of the critical current and kinetic inductance data suggests 2-3 unit cells thick interfacial layer electronically perturbed to have a higher $T_c$. A simple charge transfer model with cation intermixing explains the observed $T_c$ in bilayers. Still the unusually large thickness of interfacial superconducting layers can not be explained in terms of this model. We believe the stripe relaxation as well as the proximity effect also influence the superconductivity of the interface.

We report remarkably low residual resistivity, giant residual resistivity ratio, free-electron-like Hall resistivity and high mobility ($\approx$ 10$^4$ cm$^2$V$^{-1}$s$^{-1}$) charge transport in epitaxial films of Co$_2$MnSi and Co$_2$FeSi grown on (001) SrTiO$_3$. This unusual behavior is not observed in films deposited on other cubic oxide substrates of comparable lattice parameters. The scaling of the resistivity with thickness of the films allow extraction of interface conductance, which can be attributed to a layer of oxygen vacancies confined within 1.9 nm of the interface as revealed by atomically resolved electron microscopy and spectroscopy. The high mobility transport observed here at the interface of a fully spin polarized metal is potentially important for spintronics applications.

The two-carrier transport model as proposed for the two-dimensional electron gas formed at the interfaces of oxide heterostructures is investigated by means of a combined perturbation of near ultra-violet radiation and electrostatic field, applied both separately and simultaneously. Comparison of the photo-response of the prototype systems such as the band insulator LaAlO3 and Mott insulator LaTiO3 films on TiO2 terminated SrTiO3 show remarkably similarities. Two types of non-equilibrium carriers are generated in each system, having a signature of a particular type of perturbation characterized by distinctly different relaxation process. While, the photo-conducting state diminishes in a stretched exponential manner, with a temperature dependent activation energy varying from few tens of meV to ~ 1 to 2 meV on lowering the temperature, and a relaxation time of several hours, the recovery from electrostatic gating occurs in milli-seconds time scale. An attempt is also made to explain the experimental observations using the ab-initio density functional calculations. The calculations show that the electronic transitions associated with near ultra-violet radiation emerge from bands located at ~ 2 eV above and below the Fermi energy, which are the Ti 3d states of the SrTiO3 substrate, and that from the AlO2 (TiO2) layers of the LaAlO3 (LaTiO3) films, respectively. The slow decay of the photo-current to the unperturbed state is explained in terms of the closely spaced Ti 3dxy states in the lower conduction band, which are manifested as flat bands (or localized states) in the band structure. Such localization leads to increased carrier life-times, through the energy-time relationship of the uncertainty principle., Comment: 10 pages, 8 figures

We studied magnetic-field induced microwave absorption in 100-200 nm thick La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ films on SrTiO$_{3}$ substrate and found a low-field absorption with a very peculiar angular dependence: it appears only in the oblique field and is absent both in the parallel and in the perpendicular orientations. We demonstrate that this low-field absorption results from the ferromagnetic resonance in the multidomain state (domain-mode resonance). Its unusual angular dependence arises from the interplay between the parallel component of the magnetic field that drives the film into multidomain state and the perpendicular field component that controls the domain width through its effect on domain wall energy. The low-field microwave absorption in the multidomain state can be a tool to probe domain structure in magnetic films with in-plane magnetization., Comment: 9 pages, 9 Figures

Two-dimensional electron gas (2DEG) confined in quantum wells at insulating oxide interfaces have attracted much attention as their electronic properties display a rich physics with various electronics orders such as superconductivity and magnetism. A particularly exciting features of these hetero-structures lies in the possibility to control their electronic properties by electrostatic gating, opening up new opportunities for the development of oxide based electronics. However, unexplained gating hysteresis and time relaxation of the 2DEG resistivity have been reported in some bias range, raising the question of the precise role of the gate voltage. Here we show that in LaTiO3/SrTiO3 and LaAlO3/SrTiO3 heterostructures, above a filling threshold, electrons irreversibly escape out of the well. This mechanism, which is directly responsible for the hysteresis and time relaxation, can be entirely described by a simple analytical model derived in this letter. Our results highlight the crucial role of the gate voltage both on the shape and the filling of the quantum well. They also demonstrate that it is possible to achieve a low-carrier density regime in a semiconductor limit, whereas the high-carrier density regime is intrinsically limited.

The magnetic field driven superconductor/insulator transition is studied in a large variety of $La_{2-x}Sr_xCuO_4$ thin films of various Sr dopings. Temperature dependence of the resistivity down to 4.2 or 1.5 K under high pulsed magnetic field (up to 57 T) is analyzed. In particular, the existence of plateaus in the resistance versus temperature curves, in a limited range of temperature, for given values of the magnetic field is carefully investigated. It is shown to be associated to scaling behaviour of the resistance versus magnetic field curves, evocative of the presence of a quantum critical point. A three-dimensional (H,x,T) phase diagram is proposed, taking into account the intrinsic lamellar nature of the materials by the existence of a temperature crossover from quantum-two-dimensional to three-dimensional behavior., Comment: 8 pages, 10 figures

YBa$_{2}$Cu$_{3}$O$_{7}$ - La$_{2 / 3}$Sr$_{1 / 3}$MnO$_{3}$ heterostructures of [110] orientation are grown to allow direct injection of spin polarized holes from the La$_{2 / 3}$Sr$_{1 / 3}$MnO$_{3}$ into the CuO$_2$ superconducting planes. The magnetic response of the structure at T $<$ T$_{sc}$ shows both diamagnetic and ferromagnetic moments with [001] direction as magnetic easy axis. While the superconducting transition temperature (T$_{sc}$) of these structures is sharp ($\Delta$T$_{sc} \simeq$ 2.5 K), the critical current density (J$_c$) follows a dependence of the type $J_c = J{_o}(1-\frac{T}{T_{sc}})^{3/2}$ with highly suppressed J$_o$ ($\simeq 2 \times 10^4$ A/cm$^2$) indicating strong pair breaking effects of the ferromagnetic boundary., Comment: 12 pages five figures

In this letter, we show that a superconducting two-dimensional electron gas is formed at the LaTiO3/SrTiO3 interface whose transition temperature can be modulated by a back-gate voltage. The gas consists of two types of carriers : a majority of low-mobility carriers always present, and a few high-mobility ones that can be injected by electrostatic doping. The calculation of the electrons spatial distribution in the confinement potential shows that the high-mobility electrons responsible for superconductivity set at the edge of the gas whose extension can be tuned by field effect.

We report the observation of a pronounced dip in the in-plane field (H//) dependence of the critical current density Jc(H) and a peak in resistance R(H) of a NbN-HoNi5 bilayer at temperatures below the magnetic ordering temperature (TCurie ~ 5.5 K) of HoNi5, which is lower than the onset temperature (~ 9 K) of superconductivity in the NbN layer. The extrema in Jc(H) and R(H) appear at fields much below the upper critical field of NbN. It is suggested that the origin of this feature is linked with the non-collinear magnetization of HoNi5 whose normal component assists in depairing of Pearl vortex-antivortex pairs in the system. A spin reorientation transition driven by the H// diminishes this normal component and consequently the excess dissipation., Comment: This paper has been withdrawn by the author due to a crucial sign error in analysis

Transition metal oxides display a great variety of quantum electronic behaviours where correlations often play an important role. The achievement of high quality epitaxial interfaces involving such materials gives a unique opportunity to engineer artificial structures where new electronic orders take place. One of the most striking result in this area is the recent observation of a two-dimensional electron gas at the interface between a strongly correlated Mott insulator LaTiO3 and a band insulator SrTiO3. The mechanism responsible for such a behaviour is still under debate. In particular, the influence of the nature of the insulator has to be clarified. Here we show that despite the expected electronic correlations, LaTiO3/SrTiO3 heterostructures undergo a superconducting transition at a critical temperature Tc=300 mK. We have found that the superconducting electron gas is confined over a typical thickness of 12 nm. We discuss the electronic properties of this system and review the possible scenarios.

We have investigated the temperature driven first order metal-insulator (M-I) transition in thin films of NdNiO$_3$ and have compared it with the bulk behavior. The M-I transition of thin films is sensitive to epitaxial strain and a partial relaxation of epitaxial strain creates an inhomogeneous strain field in the films which broadens the M-I transition. Both the thin film and the bulk samples exhibit non equilibrium features in the transition regime which are attributed to the presence of high temperature metallic phases in their supercooled state. The degree of supercooling in the thin films is found to be much smaller than in the bulk which suggests that the metal insulator transition in the thin film occurs through heterogeneous nucleation., Comment: 7 pages, 4 figures

We report an unconventional and promising route to self-assemble distributed superconductor-ferromagnet-superconductor (S-F-S) Josephson Junctions on single crystal [100] MgO. These structures consist of [110] epitaxial nano-plaquettes of Fe covered with superconducting NbN films of varying thickness. The S-F-S structures are characterized by strong magnetoresistance (MR) anisotropy for the in-plane and out-of-plane magnetic fields. The stronger in-plane MR suggests decoherence of S-F-S junctions whose critical current follows a (1-T/Tc) and (1-T/Tc)1/2 dependence for T Tc and T<

Polycrystalline La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ (LSMO) thin films were synthesized by pulsed laser ablation on single crystal (100) yttria-stabilized zirconia (YSZ) substrates to investigate the mechanism of magneto-transport in a granular manganite. Different degrees of granularity is achieved by using the deposition temperature (T$_{D}$) of 700 and 800 $^{0}$C. Although no significant change in magnetic order temperature (T$_C$) and saturation magnetization is seen for these two types of films, the temperature and magnetic field dependence of their resistivity ($\rho$(T, H)) is strikingly dissimilar. While the $\rho$(T,H) of the 800 $^{0}$C film is comparable to that of epitaxial samples, the lower growth temperature leads to a material which undergoes insulator-to-metal transition at a temperature (T$_{P}$ $\approx$ 170 K) much lower than T$_C$. At T $\ll$ T$_P$, the resistivity is characterized by a minimum followed by ln $\emph{T}$ divergence at still lower temperatures. The high negative magnetoresistance ($\approx$ 20$%$) and ln $\emph{T}$ dependence below the minimum are explained on the basis of Kondo-type scattering from blocked Mn-spins in the intergranular material. Further, a striking feature of the T$_D$ = 700 $^{0}$C film is its two orders of magnitude larger anisotropic magnetoresistance (AMR) as compared to the AMR of epitaxial films. We attribute it to unquenching of the orbital angular momentum of 3d electrons of Mn ions in the intergranular region where crystal field is poorly defined., Comment: 26 pages, 7 figures

We have utilized the antiferromagnetic nature and structural/chemical compatibility of La$_{0.45}$Sr$_{0.55}$MnO$_{3}$ with highly spin polarized La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ to prepare epitaxial exchange bias couples. A robust exchange bias (EB) shift of magnetization hysteresis with associated interfacial exchange energy J $\approx$ 0.13 erg/cm$^2$ at 10 K along with enhanced coercivity are reported. The EB effect was engineered to bring coercivity contrast between La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ and cobalt films in La$_{0.45}$Sr$_{0.55}$MnO$_{3}$/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$/SrTiO$_{3}$/Co magnetic tunnel junctions., Comment: 10 pages, 4 figures

Epitaxial thin films of charge-ordered Pr$_{0.625}$Ca$_{0.375}$MnO$_{3}$ have been studied using variable temperature Scanning tunneling microscopy and spectroscopy (STM/STS). The as grown films were found to be granular while the annealed films show atomic terraces at all temperatures and are found to be electronically homogeneous in 78-300K temperature range. At high temperatures (T$>$T$_{CO}\approx$ 230 K) the local tunnel spectra of the annealed films show a depression in the density of states (DOS) near Fermi energy implying a pseudogap with a significant DOS at E$_F$. The gap feature becomes more robust with cooling with a sharp jump in DOS at E$_F$ at T$_{CO}$ and with a gap value of $\sim$0.3 eV at 78K. At low temperatures we find a small but finite DOS at E$_F$ indicative of some delocalized carriers in the CO phase together with an energy gap. This is consistent with bulk transport, which shows weakening of the activation gap with cooling below 200K, and indicates the presence of two types of carriers at low temperatures., Comment: 4 pages, 4 figures