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Simulation of energy deposition in silicon by nuclear reactions is a crucial point for single event prediction tool development. In order to compare with the simulation of nuclear reactions, a silicon diode is irradiated by a 30 MeV and 63 MeV neutron beam and the energy deposited by each nuclear reaction is measured. Simulation of the ionizing energy deposition in the irradiated diode is performed by the Monte Carlo method using nuclear reaction databases. Neutron beam spectra and surrounding materials are taken into account. Experimental and simulated results are shown to be in good agreement. Index Terms--Monte Carlo methods, neutron beams, neutron detectors, radiation effects.

From annealing experiments performed on both irradiated Si[O.sub.2]--Si structures and MOS devices, swift heavy ions-induced morphological oxide defects are proposed to possibly act as latent defects. Index Terms--Heavy ion, isochronal annealing, latent defects, MOS devices, reliability, Si[O.sub.2]2, structural modifications.

This paper presents a validation of the methodology based upon backside laser irradiations to characterize the sensitivity of power devices towards single-event burnout. This is done thanks to high-energy heavy ion testing and device simulations. Index Terms--Commercial power MOSFETs, heavy ion tests, laser tests, single-event burnout (SEB), software simulations.

The main objective of the work presented here is to explore the ability of laser irradiations to determine the SET sensitive depths of a linear device by using several wavelengths. Laser testing at two wavelengths allows the estimation of sensitive depths. The approach conducted here is applied for the first time to a linear device with very deep sensitive depth. The 1064 nm wavelength seems to be the most adequate one to reveal all sensitive areas and, when comparing with heavy ion experimental data, shows a reasonable agreement with heavy ion cross section. Index Terms--Laser-induced single-event effects, LM124 operational amplifier, sensitive volume, sensitivity of linear ICs, single-event transient (SET).

This paper presents new results to compare EADS CCR laser experiments and heavy ion tests. More precisely, this study describes the influence of the laser spot size on the threshold energy of the SEU cross-section curves. A new methodology is proposed to correlate laser to heavy ion results. Index Terms--Backside, laser, single event effect (SEE), spot size, SRAM.

The results of the MC-RED nuclear physics code used for determining the deposited energy in a silicon volume are validated. The simulation of the three ionizing contributions of silicon irradiation by proton is achieved and is in good agreement with experimental results at 30 MeV.