Search

We report lasing from nonpolar p-i-n InGaN/GaN multi-quantum well core-shell single-nanowire lasers by optical pumping at room temperature. The nanowire lasers were fabricated using a hybrid approach consisting of a top-down two-step etch process followed by a bottom-up regrowth process, enabling precise geometrical control and high material gain and optical confinement. The modal gain spectra and the gain curves of the core-shell nanowire lasers were measured using micro-photoluminescence and analyzed using the Hakki-Paoli method. Significantly lower lasing thresholds due to high optical gain were measured compared to previously reported semipolar InGaN/GaN core-shell nanowires, despite significantly shorter cavity lengths and reduced active region volume. Mode simulations show that due to the core-shell architecture, annular-shaped modes have higher optical confinement than solid transverse modes. The results show the viability of this p-i-n nonpolar core-shell nanowire architecture, previously investigated for next-generation light-emitting diodes, as low-threshold, coherent UV-visible nanoscale light emitters, and open a route toward monolithic, integrable, electrically injected single-nanowire lasers operating at room temperature.

The top-down fabrication of an in-plane nanowire (NW) GaAs metal-oxide-semiconductor field-effect transistor (MOSFET) with a trigate oxide implemented by liquid-phase chemical-enhanced oxidation (LPCEO) is reported. A 2 μm long channel having an effective cross section ∼70 × 220 nm(2) is directly fabricated into an epitaxial n (+)-GaAs layer. This in-plane NW structure is achieved by focused ion beam (FIB) milling and hydrolyzation oxidation resulting in electronic isolation from the substrate through a semiconductor-on-insulator structure with an n (+)-GaAs/Al2O3 layer stack. The channel is epitaxially connected to the μm-scale source and drain within a single layer for a planar MOSFET to avoid any issues of ohmic contact and LPCEO to the NW. To fabricate a MOSFET, the top and the two sidewalls of the in-plane NW are oxidized by LPCEO to relieve the surface damage from FIB as well as to transform these surfaces to a ∼15 nm thick gate oxide. This trigate device has threshold voltage ∼0.14 V and peak transconductance ∼35 μS μm(-1) with a subthreshold swing ∼150 mV/decade and on/off ratio of drain current ∼10(3), comparable to the performance of bottom-up NW devices.

Electrical contacts on the top surface of solar cells and light emitting diodes cause shadow losses. The phenomenon of extraordinary optical transmission through arrays of subwavelength holes suggests the possibility of engineering such contacts to reduce the shadow using plasmonics, but resonance effects occur only at specific wavelengths. Here we describe instead a broadband effect of enhanced light transmission through arrays of subwavelength metallic wires, due to the fact that, in the absence of resonances, metal wires asymptotically tend to invisibility in the small size limit regardless of the fraction of the device area taken up by the contacts. The effect occurs for wires more than an order of magnitude thicker than the transparency limit for metal thin films. Finite difference in time domain calculations predict that it is possible to have high cloaking efficiencies in a broadband wavelength range, and we experimentally demonstrate contact shadow losses less than half of the geometric shadow.

The electric field immediately below an illuminated metal-film that is perforated with a hole array on a dielectric consists of direct transmission and scattering of the incident light through the holes and evanescent near-field from plasmonic excitations. Depending on the size and shape of the hole apertures, it exhibits an oscillatory decay in the propagation direction. This unusual field penetration is explained by the interference between these contributions, and is experimentally confirmed through an aperture which is engineered with four arms stretched out from a simple circle to manipulate a specific plasmonic excitation available in the metal film. A numerical simulation quantitatively supports the experiment. This fundamental characteristic will impact plasmonics with the near-fields designed by aperture engineering for practical applications.

We demonstrate intrinsic, linearly polarized lasing from single GaN nanowires using cross-sectional shape control. A two-step top-down fabrication approach was employed to create straight nanowires with controllable rectangular cross-sections. A clear lasing threshold of 444 kW cm(-2) and a narrow spectral line width of 0.16 nm were observed under optical pumping at room temperature, indicating the onset of lasing. The polarization was along the short dimension (y-direction) of the nanowire due to the higher transverse confinement factors for y-polarized transverse modes resulting from the rectangular nanowire cross-section. The results show that cross-sectioned shape control can enable inherent control over the polarization of nanowire lasers without additional environment requirements, such as placement onto lossy substrates.

LED lighting systems with large color gamuts, with multiple LEDs spanning the visible spectrum, offer the potential of increased lighting efficiency, improved human health and productivity, and visible light communications addressing the explosive growth in wireless communications. The control of this "smart lighting system" requires a silicon-integrated-circuit-compatible, visible, plenoptic (angle and wavelength) detector. A detector element, based on an offset-grating-coupled dielectric waveguide structure and a silicon photodetector, is demonstrated with an angular resolution of less than 1° and a wavelength resolution of less than 5 nm.

Graphene nanostructures are attracting a great deal of interest because of newly emerging properties originating from quantum confinement effects. We report on using interferometric lithography to fabricate uniform, chip-scale, semiconducting graphene nanomesh (GNM) with sub-10 nm neck widths (smallest edge-to-edge distance between two nanoholes). This approach is based on fast, low-cost, and high-yield lithographic technologies and demonstrates the feasibility of cost-effective development of large-scale semiconducting graphene sheets and devices. The GNM is estimated to have a room temperature energy bandgap of ~30 meV. Raman studies showed that the G band of the GNM experiences a blue shift and broadening compared to pristine graphene, a change which was attributed to quantum confinement and localization effects. A single-layer GNM field effect transistor exhibited promising drive current of ~3.9 μA/μm and ON/OFF current ratios of ~35 at room temperature. The ON/OFF current ratio of the GNM-device displayed distinct temperature dependence with about 24-fold enhancement at 77 K.

We report continuous, dynamic, reversible, and widely tunable lasing from 367 to 337 nm from single GaN nanowires (NWs) by applying hydrostatic pressure up to ∼7 GPa. The GaN NW lasers, with heights of 4-5 μm and diameters ∼140 nm, are fabricated using a lithographically defined two-step top-down technique. The wavelength tuning is caused by an increasing Γ direct bandgap of GaN with increasing pressure and is precisely controllable to subnanometer resolution. The observed pressure coefficients of the NWs are ∼40% larger compared with GaN microstructures fabricated from the same material or from reported bulk GaN values, revealing a nanoscale-related effect that significantly enhances the tuning range using this approach. This approach can be generally applied to other semiconductor NW lasers to potentially achieve full spectral coverage from the UV to IR.

We demonstrate polarization control in optically-pumped single GaN nanowire lasers fabricated by a top-down method. By placing the GaN nanowires onto gold substrates, the naturally occurring randomly orientated elliptical polarization of nanowire lasers is converted to a linear polarization that is oriented parallel to the substrate surface. Confirmed by simulation results, this polarization control is attributed to a polarization-dependent loss induced by the gold substrate, which breaks the mode degeneracy of the nanowire and forms two orthogonally polarized modes with largely different cavity losses.

We have developed a new imaging method, ultrafast optical wide field microscopy, capable of rapidly acquiring wide field images of nearly any sample in a non-contact manner with high spatial and temporal resolution. Time-resolved images of the photoinduced changes in transmission for a patterned semiconductor thin film and a single silicon nanowire after optical excitation are captured using a two-dimensional smart pixel array detector. These images represent the time-dependent carrier dynamics with high sensitivity, femtosecond time resolution and sub-micrometer spatial resolution.

This paper is focused on analyzing the impact of a two-dimensional metal hole array structure integrated to the back-illuminated quantum dots-in-a-well (DWELL) infrared photodetectors. The metal hole array consisting of subwavelength-circular holes penetrating gold layer (2D-Au-CHA) provides the enhanced responsivity of DWELL infrared photodetector at certain wavelengths. The performance of 2D-Au-CHA is investigated by calculating the absorption of active layer in the DWELL structure using a finite integration technique. Simulation results show that the performance of the DWELL focal plane array (FPA) is improved by enhancing the coupling to active layer via local field engineering resulting from a surface plasmon polariton mode and a guided Fabry-Perot mode. Simulation method accomplished in this paper provides a generalized approach to optimize the design of any type of couplers integrated to infrared photodetectors. Experimental results demonstrate the enhanced signal-to-noise ratio by the 2D-Au-CHA integrated FPA as compared to the DWELL FPA. A comparison between the experiment and the simulation shows a good agreement.

Imaging interferometric nanoscopy (IIN) is a synthetic aperture approach offering the potential of optical resolution to the linear-system limit of optics (~λ/4n). The immersion advantages of IIN can be realized if the object is in close proximity to a solid-immersion medium with illumination and collection through the substrate and coupling this radiation to air by a grating on the medium surface opposite the object. The spatial resolution as a function of the medium thickness and refractive index as well as the field-of-view of the objective optical system is derived and applied to simulations., (© 2012 Optical Society of America)

For a GaAs filled metallic hole array on a pre-epi GaAs substrate, the free carriers, generated by three-photon absorption (3PA) assisted by strongly enhanced local fields, reduce the refractive index of GaAs in ~200-nm thick active area through band filling and free carrier absorption. Therefore, the surface plasma wave (SPW) resonance, and the related second harmonic (SH) spectrum blue shifts with increasing fluence; For the plasmonic structure on a substrate with surface defects, free carrier recombination dominates. The band gap emission spectral peak wavelength decreases 10-nm with increasing fluence, showing the transition from nonradiative-, at low excitation, to bimolecular-recombination at high carrier concentrations.

Solid-state lighting is currently based on light-emitting diodes (LEDs) and phosphors. Solid-state lighting based on lasers would offer significant advantages including high potential efficiencies at high current densities. Light emitted from lasers, however, has a much narrower spectral linewidth than light emitted from LEDs or phosphors. Therefore it is a common belief that white light produced by a set of lasers of different colors would not be of high enough quality for general illumination. We tested this belief experimentally, and found the opposite to be true. This result paves the way for the use of lasers in solid-state lighting.

We demonstrate that interferometric lithography offers a fast, simple route to nanostructured self-assembled monolayers of alkylphosphonates on the native oxide of titanium. Exposure at 244 nm using a Lloyd's mirror interferometer caused the spatially periodic photocatalytic degradation of the adsorbates, yielding nanopatterns that extended over square centimetre areas. Exposed regions were re-functionalised by a second, contrasting alkylphosphonate, and the resulting patterns were used as templates for the assembly of molecular nanostructures; we demonstrate the fabrication of lines of polymer nanoparticles 46 nm wide. Nanopatterned monolayers were also employed as resists for etching of the metal film. Wires were formed with widths that could be varied between 46 and 126 nm simply by changing the exposure time. Square arrays of Ti dots as small as 35 nm (λ/7) were fabricated using two orthogonal exposures followed by wet etching.

In this Letter, we report our recent experimental results on the energy gap of the ν=1 quantum Hall state (Δ(ν=1)) in a quantum antidot array sample, where the effective disorder potential can be tuned continuously. Δ(ν=1) is nearly constant at small effective disorders, and collapses at a critical disorder. Moreover, in the weak disorder regime, Δ(ν=1) shows a B(total)(1/2) dependence in tilted magnetic field measurements, while in the strong disorder regime, Δ(ν=1) is linear in B(total), where B(total) is the total magnetic field at ν=1. We discuss our results within several models involving the quantum Hall ferromagnetic ground state and its interplay with sample disorder.

We study the nonlinear optical response of a fishnet structure-metamaterial all-optical switching device that exhibits two near-infrared negative-index resonances. We study and compare the nonlinear optical response at both resonances and identify transient spectral features associated with the negative index resonance. We see a significantly stronger response at the longer wavelength resonance, but identical temporal dynamics at both resonances, providing insight into separately engineering the switching time and switching ratio of such a fishnet structure metamaterial all-optical switch. We also numerically reproduce the nonlinear behavior of our device using the Drude conductivity model and a finite integration technique over wide spectral and pump fluence ranges. Thereby, we show that beyond the linear properties of the device, the magnitude of the pump-probe response is completely described by only two material parameters. These results provide insight into engineering various aspects of the nonlinear response of fishnet structure metamaterials.

Interferometric lithography (IL) is a powerful technique for the definition of large-area, nanometer-scale, periodically patterned structures. Patterns are recorded in a light-sensitive medium, such as a photoresist, that responds nonlinearly to the intensity distribution associated with the interference of two or more coherent beams of light. The photoresist patterns produced with IL are a platform for further fabrication of nanostructures and growth of functional materials and are building blocks for devices. This article provides a brief review of IL technologies and focuses on various applications for nanostructures and functional materials based on IL including directed self-assembly of colloidal nanoparticles, nanophotonics, semiconductor materials growth, and nanofluidic devices. Perspectives on future directions for IL and emerging applications in other fields are presented.

In the past few years, there has been increasing interest in surface plasmon-polaritons, as a result of the strong near-field enhancement of the electric fields at a metal-dielectric interface. Here we show the first demonstration of a monolithically integrated plasmonic focal plane array (FPA) in the mid-infrared region, using a metal with a two-dimensional hole array on top of an intersubband quantum-dots-in-a-well (DWELL) heterostructure FPA coupled to a read-out integrated circuit. Excellent infrared imagery was obtained with over a 160% increase in the ratio of the signal voltage (V(s)) to the noise voltage (V(n)) of the DWELL camera at the resonant wavelength of λ=6.1 μm. This demonstration paves the way for the development of a new generation of pixel-level spectropolarimetric imagers, which will enable bio-inspired (for example, colour vision) infrared sensors with enhanced detectivity (D) or higher operating temperatures.

We demonstrate that interferometric lithography provides a fast, simple approach to the production of patterns in self-assembled monolayers (SAMs) with high resolution over square centimeter areas. As a proof of principle, two-beam interference patterns, formed using light from a frequency-doubled argon ion laser (244 nm), were used to pattern methyl-terminated SAMs on gold, facilitating the introduction of hydroxyl-terminated adsorbates and yielding patterns of surface free energy with a pitch of ca. 200 nm. The photopatterning of SAMs on Pd has been demonstrated for the first time, with interferometric exposure yielding patterns of surface free energy with similar features sizes to those obtained on gold. Gold nanostructures were formed by exposing SAMs to UV interference patterns and then immersing the samples in an ethanolic solution of mercaptoethylamine, which etched the metal substrate in exposed areas while unoxidized thiols acted as a resist and protected the metal from dissolution. Macroscopically extended gold nanowires were fabricated using single exposures and arrays of 66 nm gold dots at 180 nm centers were formed using orthogonal exposures in a fast, simple process. Exposure of oligo(ethylene glycol)-terminated SAMs to UV light caused photodegradation of the protein-resistant tail groups in a substrate-independent process. In contrast to many protein patterning methods, which utilize multiple steps to control surface binding, this single step process introduced aldehyde functional groups to the SAM surface at exposures as low as 0.3 J cm(-2), significantly less than the exposure required for oxidation of the thiol headgroup. Although interferometric methods rely upon a continuous gradient of exposure, it was possible to fabricate well-defined protein nanostructures by the introduction of aldehyde groups and removal of protein resistance in nanoscopic regions. Macroscopically extended, nanostructured assemblies of streptavidin were formed. Retention of functionality in the patterned materials was demonstrated by binding of biotinylated proteins.

The use of simple plasma treatments and polymer deposition to tailor the anisotropic wetting properties of one-dimensional (1D) submicrometer-scale grooved surfaces, fabricated using interferometric lithography in photoresist polymer films, is reported. Strongly anisotropic wetting phenomena are observed for as-prepared 1D grooved surfaces for both positive and negative photoresists. Low-pressure plasma treatments with different gas compositions (e.g., CHF(3), CF(4), O(2)) are employed to tailor the anisotropic wetting properties from strongly anisotropic and hydrophobic to hydrophobic with very high contact angle and superhydrophilic with a smaller degree of wetting anisotropy and without changing the structural anisotropy. The change of the surface wetting properties for these 1D patterned surfaces is attributed to a change in surface chemical composition, monitored using XPS. In addition, the initial anisotropic wetting properties on 1D patterned samples could be modified by coating plasma treated samples with a thin layer of polymer. We also demonstrated that the wetting properties of 1D grooved surfaces in a Si substrate could be tuned with similar plasma treatments. The ability to tailor anisotropic wetting on 1D patterned surfaces will find many applications in microfluidic devices, lab-on-a-chip systems, microreactors, and self-cleaning surfaces.

Up to a thirty-fold detectivity enhancement is achieved for an InAs quantum dot infrared photodetector (QDIP) by the excitation of surface plasma waves (SPWs) using a metal photonic crystal (MPC) integrated on top of the detector absorption region. The MPC is a 100 nm-thick gold film perforated with a 3.6 microm period square array of circular holes. A bare QDIP shows a bias-tunable broadband response from approximately 6 to 10 microm associated with the quantum confined Stark (QCS) effect. On the other hand, an MPC-integrated QDIP exhibits a dominant peak at 11.3 microm with a approximately 1 microm full width at half maximum and the highly enhanced detectivity at the bias polarity optimized for long wavelength. This is very different from the photoresponse of the bare QDIP but fully consistent with the direct coupling of the QDs in the detector absorption region to the SPWs excited at the MPC/detector interface by incident photons. The SPW resonance wavelength, lambda, for the smallest coupling wavevector of the array in the MPC is close to 11.3 microm. The response also shows other SPW-coupled peaks: a significant peak at 8.1 microm (approximately lambda/radical2) and noticeable peaks at 5.8 microm (approximately lambda/2) and 5.4 microm (approximately lambda/ radical5) which correspond to higher-order coupling wavevectors. For the opposite bias, the MPC-integrated QDIP shows the highest response at 8.1 microm, providing a dramatic voltage tunability that is associated with QCS effect. SPWs propagate with TM (x, z) polarization along the MPC/detector interface. The enhanced detectivity is explained by these characteristics which increase both the effective absorption cross section with propagation and the interaction strength with TM polarization in the coupling to the QDs. Simulations show good qualitative agreement with the observed spectral behavior.

We demonstrate a nanoscale, subpicosecond (ps) metamaterial device capable of terabit/second all-optical communication in the near-IR. The 600 fs response, 2 orders of magnitude faster than previously reported, is achieved by accessing a previously unused regime of high-injection level, subpicosecond carrier dynamics in the alpha-Si dielectric layer of the metamaterial. Further, we utilize a previously unrecognized, higher-order, shorter-wavelength negative-index resonance in the fishnet structure, thereby extending device functionality (via structural tuning of device dimensions) over 1.0-2.0 microm. The pump energy required to modulate a single bit is only 3 nJ over our current 700 microm(2) area device and can be easily scaled into the picoJoule regime with smaller cross sectional areas.

The interactions between charged molecules and channel surfaces are expected to significantly influence the electrokinetic transport of molecules and their separations in nanochannels. This study reports the effect of wall-molecule interactions on flow control of negatively charged Alexa 488 and positively charged Rhodamine B dye molecules in an array of nanochannels (100 nm wx 500 nm dx 14 mm l) embedded in fluidic field effect transistors (FETs). For FET flow control, a third electrical potential, known as a gate bias, is applied to the channel walls to manipulate their zeta-potential. Electroosmotic flow of charged dye molecules is accelerated or reversed according to the polarity and magnitude of the gate bias. During FET flow control, we monitor how the electrostatic interaction between charged dye molecules and channel walls affects the apparent velocity of molecules, using laser-scanning confocal fluorescence microscopy. We observe that the changes in flow speed and direction of negatively charged Alexa 488 is much more pronounced than that of positively charged Rhodamine B in response to the gate bias that causes either repulsive or attractive electrostatic interactions. This observation is supported by calculations of concentration-weighted velocity profiles of the two dye molecules during FET flow control. The velocity profile of negatively charged Alexa 488 is much more pronounced at the center of each nanochannel than near its walls since Alexa 488 molecules are repelled from negatively charged channel walls. This pronounced center velocity further responds to the gate bias, increasing the average velocity by as much as 23% when -30 V is applied to the gate (zeta-potential = -80.6 mV). In contrast, the velocity profile of positively charged Rhodamine B is dispersed over the entire channel width due to dye-wall attraction and adsorption. Our experimental observations and calculations support the hypothesis that valence-charge-dependent electrostatic interaction and its manipulation by the gate bias would enhance molecular separations of differentially charged molecules in nanofluidic FETs.

Simulation results of near infrared (100- to 200-THz) fishnet-structure negative-index metamaterials (NIMs) with single and multiple functional layers exhibit bi-anisotropy - inhomogeneous asymmetry - due to the presence of a sidewall-angle. The influence of sidewall-angle resulting from realistic fabrication processes is investigated through the retrieved effective parameters by both a three-dimensional finite-difference time-domain (FDTD) method and a rigorous coupled wave analysis (RCWA).

The device fabrication and integration of nanopatterned quantum dots (PQDs) are realized through the demonstration of a broad-area light-emitting diode with PQD active region. The device involves two growth processes, first to form PQDs by selective-area epitaxy on an SiO(2) mask and then to complete the device structure after mask removal. Linear current-voltage characteristics are observed with sharp turn-on, low leakage current and low forward resistance. Electroluminescence spectra show PQD intraband structure and low quenching of emission from 77 K to room temperature. Light-current measurements demonstrate external quantum efficiency per PQD comparable to self-assembled QDs, thus providing a possible route toward individually addressable single QD devices.

Evanescent-wave illumination is applied to synthetic-aperture microscopy on a transparent solid substrate to extend the resolution limit to lambda/2(n+1) (where n is the substrate refractive index) independent of the lens NA. Using a 633 nm source and a 0.4 NA lens, a resolution to 150 nm (lambda/4.2) is demonstrated on a glass (n = 1.5) substrate. Further extension to approximately 74-nm resolution (lambda/8.6) is projected with a higher index substrate (n = 3.3)., ((c) 2008 Optical Society of America)

InAs quantum dots embedded in InGaAs quantum well (DWELL: dots-in-the-well) structures grown on nanopatterned GaAs pyramids and planar GaAs(001) surface are comparatively investigated. Photoluminescence (PL) measurements demonstrate that the DWELL structure grown on the GaAs pyramids exhibits a broad quantum well PL band (full width at half-maximum ∼ 90 meV) and a higher quantum dot emission efficiency than the DWELL structure grown on the planar GaAs(001) substrate. These properties are attributed to the InGaAs quantum well with distributed thickness profile on the faceted GaAs pyramids, which introduces a tapered energy band structure and enhances carrier capture into the quantum dots.

This article presents an analysis of the electric field distribution and current transport in fluidic nanochannels fabricated by etching of a silicon chip. The channels were overcoated by a SiO2 layer. The analysis accounts for the current leaks across the SiO2 layer into the channel walls. Suitable voltage biasing of the Si substrate allows eliminating of the leaks or using them to modify the potential distribution of the fluid. Shaping the potential in the fluid can be utilized for solute focusing and separations in fluidic nanochannels.

The numerical analysis of finite planar metal-insulator-metal waveguide structures using the transfer-matrix formalism reveals both bound and leaky surface plasmon (SP) modes. The dispersion relations, propagation lengths and confinement factors of these SP modes are presented. The highest energy SP mode consists of non-radiative (bound) and radiative (leaky) portions separated by a spectral gap. The leaky regime is further divided into antenna and reactive mode regions. The antenna mode may be used for both free-space coupling and beam steering devices.

This communication reports strongly anisotropic wetting behavior on one-dimensional nanopatterned surfaces. Contact angles, degree of anisotropy, and droplet distortion are measured on micro- and nanopatterned surfaces fabricated with interference lithography. Both the degree of anisotropy and the droplet distortion are extremely high as compared with previous reports because of the well-defined nanostructural morphology. The surface is manipulated to tune with the wetting from hydrophobic to hydrophilic while retaining the structural wetting anisotropy with a simple silica nanoparticle overcoat. The wetting mechanisms are discussed. Potential applications in microfluidic devices and evaporation-induced pattern formation are demonstrated.

We report a simple approach to the formation of 3D colloidal nanoparticle structures incorporating enclosed mesoscopic structures through a simple process of spin-coating-driven directed self-assembly onto lithographically defined polymer templates. Removal of the buried polymer patterns by high temperature calcination results in the formation of hierarchically enclosed channels, continuous networks, isolated cavities, and multilayered structures with high stability and environmental resistance. These channels are used to investigate the transport of DNA molecules in constrained geometries.

Structured illumination applied to imaging interferometric microscopy (IIM) allows extension of the resolution limit of low numerical aperture objective lenses to ultimate linear systems limits (

We use finite-difference time-domain (FDTD) simulations to demonstrate enhanced infrared absorption in a photodetector covered with a microstructured metal film consisting of a metal-plasmon grating collector/ concentrator and sub-wavelength detector well; for circular gratings we use radial FDTD, and for linear gratings we use two-dimensional FDTD. We identify a figure of merit to quantify the improvement in signal-to-noise ratio of such a detector scheme. We optimize grating parameters for a circular grating surrounding a simple hole, showing that the signal-to-noise ratio can be improved by a factor of as much as 5.2, whereas the signal-to-noise improvement for comparable linear gratings is at most 1.7. In the case of the circular grating, this result is achieved with more than 400 times as much light absorbed in the hole as with a metal film but no grating.

Imaging interferometric microscopy (IIM) is a synthetic aperture imaging approach providing resolution to the transmission medium (refractive index n) linear systems limit extending to greater, similarlambda/4n using only low-numerical-aperture (low-NA) optics. IIM uses off-axis illumination to access high spatial frequencies along with interferometric reintroduction of a zero-order reference beam on the low-NA side of the optical system. For a thin object normal to the optical axis, the frequency space limit is [(1+NA)n/lambda], while tilting the object plane allows collection of diffraction information up to the material transmission bandpass-limited spatial frequency of 2n/lambda. Tilting transforms the spatial frequencies; the algorithm to reset to the correct image frequencies is described. IIM involves combining multiple subimages; the image reconstruction procedures are discussed. A mean-square-error metric is introduced. For binary objects, sigmoidal filtering of the image provides significant resolution improvement.

Using Si as the substrate, we have fabricated multiple internal reflection infrared waveguides embedded with a parallel array of nanofluidic channels. The channel width is maintained substantially below the mid-infrared wavelength to minimize infrared scattering from the channel structure and to ensure total internal reflection at the channel bottom. A Pyrex slide is anodically bonded to the top of the waveguide to seal the nanochannels, while simultaneously enabling optical access in the visible range from the top. The Si channel bottom and sidewalls are thermally oxidized to provide an electrically insulating barrier, and the Si substrate surrounding the insulating SiO(2) layer is selectively doped to function as a gate. For fluidic field effect transistor (FET) control, a DC potential is applied to the gate to manipulate the surface charge on SiO(2) channel bottom and sidewalls and therefore their zeta-potential. Depending on the polarity and magnitude, the gate potential can accelerate, decelerate, or reverse the flow. Here, we demonstrate that this nanofluidic infrared waveguide can be used to monitor the FET flow control of charged, fluorescent dye molecules during electroosmosis by multiple internal reflection Fourier transform infrared spectroscopy. Laser scanning confocal fluorescence microscopy is simultaneously used to provide a comparison and verification of the IR analysis. Using the infrared technique, we probe the vibrational modes of dye molecules, as well as those of the solvent. The observed infrared absorbance accounts for the amount of dye molecules advancing or retracting in the nanochannels, as well as adsorbing to and desorbing from the channel bottom and sidewalls.

A double-layered metallic grating (metal-dielectric-metal) with a complementary capacitive (isolated discs) / inductive (connected film with apertures) structure exhibits multiple infrared transmission resonances peaks with up to 70% at wavelength ranges corresponding to local modes for geometric dimensions less than a wavelength. The period, dielectric thickness, refractive index and unit cell size of the periodic structure modulate the local mode positions and amplitudes. The electromagnetic field distribution and energy flow in the structure explain the relation of transmission resonance, local modes, and distributed surface plasma wave modes.

The linear systems optical resolution limit is a dense grating pattern at a lambda/2 pitch or a critical dimension (resolution) of lambda/4. However, conventional microscopy provides a (Rayleigh) resolution of only ~ 0.6lambda/NA, approaching lambda/1.67 as NA ?lambda1. A synthetic aperture approach to reaching the lambda/4 linear-systems limit, extending previous developments in imaginginterferometric microscopy, is presented. Resolution of non-periodic 180-nm features using 633-nm illumination (lambda/3.52) and of a 170-nm grating (lambda/3.72) is demonstrated. These results are achieved with a 0.4-NA optical system and retain the working distance, field-of-view, and depth-of-field advantages of low-NA systems while approaching ultimate resolution limits.

This article reports a simple, versatile approach to the fabrication of lithographically defined mesoscopic colloidal silica nanoparticle patterns over large areas using spin-coating, interferometric lithography, and reactive-ion etching. One-dimensional nanoparticle films (bands) and 2D discs, diamonds, and holes with sub-micrometer periodicity, high quality, and excellent uniformity were successfully fabricated over large areas. The well-defined shape and period of the patterned nanoparticle film were controlled in the interferometric lithography step, while the thickness of nanoparticle film was easily tuned in the spin-coating step. This approach can extend to other deposition methods such as convective self-assembly, electrostatic self-assembly, and other materials such as metallic and ferromagnetic nanoparticles. We have also been able to generate sparse, random, isolated particle patterns, using a combination of interferometric lithography and layer-by-layer deposition as an extension of this approach to another deposition method, and to generate disc nanoparticle patterns using colloidal lithography as an extension of this approach to another lithography technique. These patterned films will find important applications in the fields of material growth, biosensors, and catalysis, as well as serving as building blocks for further fabrication.

We report here plasma-induced formation of Ag nanostructures for surface-enhanced Raman scattering (SERS) applications. An array of uniform Ag patterned structures of 150 nm diameter was first fabricated on a silicon substrate with imprint lithography; then the substrate was further treated with an oxygen plasma to fracture the patterned structures into clusters of smaller, interconnected, closely packed Ag nanoparticles (20-60 nm) and redeposited Ag nanodots ( approximately 10 nm) between the clusters. The substrate thus formed had a uniform ultrahigh SERS enhancement factor (1010) over the entire substrate for 4-mercaptophenol molecules. By comparison, Au patterned structures fabricated with the same method did not undergo such a morphological change after the plasma treatment and showed no enhancement of Raman scattering.

Negative-index metamaterials (NIMs) at near infrared wavelengths (~2 mum) are fabricated with circular, elliptical and rectangular holes penetrating through metal/dielectric/metal films. All three NIM structures exhibit similar figures of merit; however, the transmission is higher for the NIM with rectangular holes as a result of an improved impedance match with the substrate-superstrate (air-glass) combination.

By extending GaAs dielectric posts with a large second-order nonlinear susceptibility through the holes of a subwavelength metallic hole array coupled to the metal surface-plasma wave, strong second harmonic (SH) signal is observed. The SH signal is strengthened as a result of the enhanced electromagnetic fields inside the hole apertures.

Bicellar mixtures, planar lipid bilayer assemblies comprising long- and short-chain phosphatidylcholine lipids in suspension, were used to form supported lipid bilayers on flat silicon substrate and on nanotextured silicon substrates containing arrays of parallel troughs (170 nm wide, 380 nm deep, and 300 nm apart). Confocal fluorescence and atomic force microscopies were used to characterize the resulting lipid bilayer. Formation of a continuous biphasic undulating lipid bilayer membrane, where the crests and troughs corresponded to supported and suspended lipid bilayer regions, is demonstrated. The use of interferometric lithography to fabricate nanotexured substrates provides an advantage over other nanotextured substrates such as nanoporous alumina by offering flexibility in designing different geometries for suspending lipid bilayers.

Numerical simulations of a near-infrared negative-index metamaterial (NIM) slab consisting of multiple layers of perforated metal-dielectric stacks exhibiting a small imaginary part of the index over the wavelength range for negative refraction are presented. A consistent effective index is obtained using both scattering matrix and modal analysis approaches. Backward phase propagation is verified by calculation of fields inside the metamaterial. The NIM figure of merit, [ -Re(n)/Im(n) ], for these structures is improved by ~ 10x compared with previous reports, establishing a new approach to thick, low-loss metamaterials at infrared and optical frequencies.

This report presents a study of electrokinetic transport in a series of integrated macro- to nano-fluidic chips that allow for controlled injection of molecular mixtures into high-density arrays of nanochannels. The high-aspect-ratio nanochannels were fabricated on a Si wafer using interferometric lithography and standard semiconductor industry processes, and are capped with a transparent Pyrex cover slip to allow for experimental observations. Confocal laser scanning microscopy was used to examine the electrokinetic transport of a negatively charged dye (Alexa 488) and a neutral dye (rhodamine B) within nanochannels that varied in width from 35 to 200 nm with electric field strengths equal to or below 2000 V m-1. In the negatively charged channels, nanoconfinement and interactions between the respective solutes and channel walls give rise to higher electroosmotic velocities for the negatively charged dye than for the neutral dye, towards the negative electrode, resulting in an anomalous separation that occurs over a relatively short distance (<1 mm). Increasing the channel widths leads to a switch in the electroosmotic transport behavior observed in microscale channels, where neutral molecules move faster because the negatively charged molecules are slowed by the electrophoretic drag. Thus a clear distinction between "nano-" and "microfluidic" regimes is established. We present an analytical model that accounts for the electrokinetic transport and adsorption (of the neutral dye) at the channel walls, and is in good agreement with the experimental data. The observed effects have potential for use in new nano-separation technologies.

Metal-based negative refractive-index materials have been extensively studied in the microwave region. However, negative-index metamaterials have not been realized at near-IR or visible frequencies due to difficulties of fabrication and to the generally poor optical properties of metals at these wavelengths. In this Letter, we report the first fabrication and experimental verification of a transversely structured metal-dielectric-metal multilayer exhibiting a negative refractive index around 2 microm. Both the amplitude and the phase of the transmission and reflection were measured experimentally, and are in good agreement with a rigorous coupled wave analysis.

We numerically demonstrate a metamaterial with both negative epsilon and negative mu over an overlapping near-infrared wavelength range resulting in a low loss negative-index material. Parametric studies optimizing this negative index are presented. This structure can be easily fabricated with standard semiconductor processing techniques.

Using a single interferometric lithography patterning step along with self-aligned pattern-definition techniques, uniform, large-area metallic coaxial arrays with ~ 100-nm toroidal gaps are fabricated. Enhanced (5x) mid-infrared (4 mum) transmission through these sub-wavelength coaxial arrays is observed as compared with that through the same fractional opening area hole arrays as a result of the complex coaxial unit cell. Varying the coaxial dimensions shifts the resonance wavelength and impacts the maximum transmission; design rules are derived. The ability to control the transmission wavelength combined with dramatically enhanced transmission represent a promising path toward nanophotonic applications.

We report the observation of enhanced near-infrared transmission through arrays of subwavelength coaxial metallic structures compared with that through comparable diameter hole arrays as a result of localized electromagnetic modes supported by the complex coaxial unit cell. Polarization and angle-dependent transmission measurements clearly demonstrate the coupling between this localized mode and delocalized surface plasmon modes. A generalized, multiple discrete states Fano line shape provides a good fit to the experimental results.