338 results on '"Brudnyi, V."'
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2. InxAl1 –xN Solid Solutions: Composition Stability Issues
3. Electrophysical and Physical-Chemical Properties of Ohmic Contacts to III-N Compounds
4. Physical Properties of Solid Solutions InxAl1–xN
5. Diffusion of Magnesium in Led Structures with InGaN/GaN Quantum Wells at True Growth Temperatures 860–980°C of p-GaN
6. BN, AlN, GaN, InN: Charge Neutrality Level, Surface, Interfaces, Doping
7. Effect of a Short-Period InGaN/GaN Superlattice on the Efficiency of Blue LEDs at High Level of Optical Pumping
8. Gallium Nitride: Charge Neutrality Level and Interfaces
9. Effect of the Barrier Thickness on the Optical Properties of InGaN/GaN/Al2O3 (0001) LED Heterostructures
10. On the charge neutrality level and the electronic properties of interphase boundaries in the layered ε-GaSe semiconductor
11. Temperature Dependence of Quantum Efficiency of InGaN/GaN Led Structures at High Current Density
12. Ab initio calculations of optical constants of GaSe and InSe layered crystals
13. Led InGaN/GaN Structures with Short-Period Superlattice Grown on Flat and Patterned Sapphire Substrates
14. Charge Carrier Transport in LEDs Based on Multiple (Al x Ga1–x )0.5In0.5P/(Al0.54Ga0.46)0.5In0.5P Quantum Wells
15. Electronic properties of p-GaN(Mg) irradiated with reactor neutrons
16. Growth Defects in Light Emitting InGaN/GaN Structures
17. Structure Defects in a Triple Semiconducting Compound ZnGeP2
18. Electroluminescence Spectra of “Red” LED AlGaInP / GaAs Structures
19. The Effect of Hard Radiation on the Electronic, Optical, and Recombination Properties of the (Al, Ga, In)-P and (Al, Ga)-As Compounds and their Solid Solutions
20. Electronic structure and the local electroneutrality level of SiC polytypes from quasiparticle calculations within the GW approximation
21. Electrical properties of electron-irradiated epitaxial n-GaN films
22. Electronic properties and deep traps in electron-irradiated n-GaN
23. Modification of the structural lattice parameters and electron spectra of n-GaAs films on sapphire on irradiation with reactor neutrons
24. Effect of pressure and mechanical stress on the electronic properties of AlN and GaN
25. Genesis of hole states of small germanium clusters in silicon
26. Charge neutrality level and electronic properties of GaSe under pressure
27. The level of local charge-neutrality and pinning of the Fermi level in irradiated nitrides wz-III-N (BN, AlN, GaN, InN)
28. Electronic properties and pinning of the Fermi level in irradiated II–IV–V2 semiconductors
29. The charge neutrality level and the fermi level pinning in A3N (BN, AlN, GaN, InN) nitrides
30. Electrical properties of proton-irradiated CdSnAs2
31. Electro-physical properties of cadmium-silicon diarsenide irradiated by H+ ions
32. Correlation between energy positions of deep intrinsic point-defect levels and a limiting fermi level in irradiated III–V semiconductors
33. The charge neutrality level in w-AlxGa1−x N solid solutions
34. Electronic properties of silicon with ultrasmall germanium clusters
35. The effect of neutron irradiation on the properties of n-InSb whisker microcrystals
36. The electrical and optical properties of InP irradiated with high integrated fluxes of neutrons
37. The electrical and optical properties of InAs irradiated with electrons (∼2 MeV): The energy structure of intrinsic point defects
38. Electrical properties and limiting position of the fermi level in InSb irradiated with protons
39. Silicon Germanium Nanostructures: Electronic Parameters and Optical Characteristics
40. Charge Neutrality in Semiconductors: Defects, Interfaces, Surface
41. The Fermi Level Pinning in Semiconductors (Interphase Boundaries, Clusters, and Radiation Modification)
42. Electronic properties of irradiated semiconductors. A model of the fermi level pinning
43. Electrical properties of InAs irradiated with protons
44. The U peak in the DLTS spectra of n-GaAs irradiated with fast neutrons and 65-MeV protons
45. Influence of electronic (charge) state of E traps on their introduction rate in irradiated n-GaAs
46. electrical properties of the proton-irradiated semi-insulating GaAs:Cr
47. Fermi level pinning and electrical properties of irradiated CdxHg1−x Te alloys
48. Radiation defects in semiconductors under hydrostatic pressure
49. Optical absorption spectra of Si with Ge quantum dots
50. Fermi level pinning and hydrostatic pressure effect in electron irradiated GaSb
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