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175 results on '"Brezeanu M"'

1. Impact of 13C Contamination on Neutron Yield Measurement in the 27AI(α, n) Reaction

Author

Roy Rajat, Choudhury D., Testov D. A., Balabanski D. L., Kuşoğlu A., Lorusso G., Söderström P.-A., Aogaki S., Ban S.-R., Brezeanu M., Burducea I., Corbu R., Cuciuc M., Dhal A., Djourelov N., Florea N., Gavrilescu A., Gheorghiu C., Guardo G. L., Iancu D., Lelasseux V., Nedelcu C.V., Pai H., Parlea P., Petruse T., Rotaru A., Singh S., State A.N., Straticiuc M., Toma V., and Tozar T.

Subjects
Physics, QC1-999
Abstract

We have performed the measurement of the 27Al(α, n) cross section at IFIN-HH for a range of energies from 2.5 to 5.2 MeV, using an array of 28 3He counters arranged in 3 concentric rings (ELIGANT-TN). Here we present the experimental setup and discuss the role of the 13C contamination which effects the measurements in the low-energy region. Energy-dispersive X-ray spectroscopy carried out before and after the experiment suggested an increase in the 13C concentration during the experiment.

Published
2024
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2. Statistical properties and photon strength functions of the ${}^{112,114}$Sn isotopes below the neutron separation threshold

Author

Söderström, P. -A., Markova, M., Tsoneva, N., Xu, Y., Kuşoğlu, A., Aogaki, S., Balabanski, D. L., Ban, S. R., Borcea, R., Brezeanu, M., Camera, F., Ciemała, M., Ciocan, Gh., Clisu, C., Costache, C., Crespi, F. C. L., Cuciuc, M., Dhal, A., Dinescu, I., Florea, N. M., Giaz, A., Kmiecik, M., Lelasseux, V., Lica, R., Mărginean, N. M., Mihai, C., Mihai, R. E., Nichita, D., Pai, H., Pârlea, P., Petruse, T., Rotaru, A., Sotty, C. O., Spătaru, A., Stan, L., Testov, D. A., Tofan, D., Toma, S., Tozar, T., Turturică, A., Turturică, G. V., Ujeniuc, S., Ur, C. A., and Wieland, O.

Subjects
Nuclear Experiment
Abstract

Here we report on the first measurements of the $\gamma$-ray strength functions and nuclear level densities of ${}^{112,114}$Sn performed at the 9~MV Tandem accelerator facilities at IFIN-HH using the Oslo method. We extract thermodynamic properties as well as both gross and fine properties of the pygmy dipole resonance for systematic comparison in the chain of Sn isotopes. The results are compared with microscopic models implemented in the TALYS reaction code, and the fully microscopic quasiparticle-phonon model for the underlying nuclear structure of the dipole strength in ${}^{112,114}$Sn. The experimental data and theoretical results are further included into the cross-section and reaction rate calculations for the $(\mathrm{n},\gamma)$ production reaction of the $p$-process nuclei ${}^{112,114}$Sn showing a significant increase in reaction rates at high temperatures compared to existing nuclear databases., Comment: 21 pages, 17 figures

Published
2024

3. PANDORA project: photo-nuclear reactions below $A=60$

Author

Tamii, A., Pellegri, L., Söderström, P. -A., Allard, D., Goriely, S., Inakura, T., Khan, E., Kido, E., Kimura, M., Litvinova, E., Nagataki, S., von Neumann-Cosel, P., Pietralla, N., Shimizu, N., Tsoneva, N., Utsuno, Y., Adachi, S., Adsley, P., Bahini, A., Balabanski, D., Baret, B., Bekker, J. A. C., Binda, S. D., Boicu, E., Bracco, A., Brandherm, I., Brezeanu, M., Brummer, J. W., Camera, F., Crespi, F. C. L., Dalal, R., Donaldson, L. M., Fujikawa, Y., Furuno, T., Haoning, H., Honda, Y., Gavrilescu, A., Inoue, A., Isaak, J., Jivan, H., Jones, P. M., Jongile, S., Just, O., Kawabata, T., Khumalo, T., Kiener, J., Kleemann, J., Kobayashi, N., Koshio, Y., Kuşoğlu, A., Li, K. C. W., Malatji, K. L., Molaeng, R. E., Motoki, H., Murata, M., Netshiya, A. A., Neveling, R., Niina, R., Okamoto, S., Ota, S., Papst, O., Parizot, E., Petruse, T., Reen, M. S., Ring, P., Sakanashi, K., Sideras-Haddad, E., Siem, S., Spall, M., Suda, T., Sudo, T., Taniguchi, Y., Tatischeff, V., Utsunomiya, H., Wang, H., Werner, V., Wibowo, H., Wiedeking, M., Wieland, O., Xu, Y., and Yang, Z. H.

Subjects
Nuclear Experiment, Astrophysics - High Energy Astrophysical Phenomena, Nuclear Theory
Abstract

Photo-nuclear reactions of light nuclei below a mass of $A=60$ are studied experimentally and theoretically by the PANDORA (Photo-Absorption of Nuclei and Decay Observation for Reactions in Astrophysics) project. Two experimental methods, virtual-photon excitation by proton scattering and real-photo absorption by a high-brilliance gamma-ray beam produced by laser Compton scattering, will be applied to measure the photo-absorption cross sections and the decay branching ratio of each decay channel as a function of the photon energy. Several nuclear models, e.g. anti-symmetrized molecular dynamics, mean-field type models, a large-scale shell model, and ab initio models, will be employed to predict the photo-nuclear reactions. The uncertainty in the model predictions will be evaluated from the discrepancies between the model predictions and the experimental data. The data and the predictions will be implemented in a general reaction calculation code TALYS . The results will be applied to the simulation of the photo-disintegration process of ultra-high-energy cosmic rays in inter-galactic propagation.

Published
2022

4. PANDORA Project for the study of photonuclear reactions below A=60

Author

Tamii, A., Pellegri, L., Söderström, P.-A., Allard, D., Goriely, S., Inakura, T., Khan, E., Kido, E., Kimura, M., Litvinova, E., Nagataki, S., Neumann-Cosel, P. von, Pietralla, N., Shimizu, N., Tsoneva, N., Utsuno, Y., Adachi, S., Adsley, P., Bahini, A., Balabanski, D., Baret, B., Bekker, J. A. C., Binda, S. D., Boicu, E., Bracco, A., Brandherm, I., Brezeanu, M., Brummer, J. W., Camera, F., Crespi, F. C. L., Dalal, R., Donaldson, L. M., Fujikawa, Y., Furuno, T., Haoning, H., Higuchi, R., Honda, Y., Gavrilescu, A., Inoue, A., Isaak, J., Jivan, H., Jones, P., Jongile, S., Just, O., Kawabata, T., Khumalo, T., Kiener, J., Kleemann, J., Kobayashi, N., Koshio, Y., Kuşoğlu, A., Li, K. C. W., Malatji, K. L., Molaeng, R. E., Motoki, H., Murata, M., Netshiya, A. A., Neveling, R., Niina, R., Okamoto, S., Ota, S., Papst, O., Parizot, E., Petruse, T., Reen, M. S., Ring, P., Sakanashi, K., Sideras-Haddad, E., Siem, S., Spall, M., Suda, T., Sudo, T., Taniguchi, Y., Tatischeff, V., Utsunomiya, H., Wang, H., Werner, V., Wibowo, H., Wiedeking, M., Wieland, O., Xu, Y., and Yang, Z. H.

Published
2023
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5. Impact of 13C Contamination on Neutron Yield Measurement in the 27AI(α, n) Reaction.

Author

Roy, Rajat, Choudhury, D., Testov, D. A., Balabanski, D. L., Kuşoğlu, A., Lorusso, G., Söderström, P.-A., Aogaki, S., Ban, S.-R., Brezeanu, M., Burducea, I., Corbu, R., Cuciuc, M., Dhal, A., Djourelov, N., Florea, N., Gavrilescu, A., Gheorghiu, C., Guardo, G. L., and Iancu, D.

Subjects
NEUTRONS, ENERGY dispersive X-ray spectroscopy, NUCLEAR reactions, NEUTRON flux, NUCLEAR energy
Abstract

We have performed the measurement of the 27Al(α, n) cross section at IFIN-HH for a range of energies from 2.5 to 5.2 MeV, using an array of 28 3He counters arranged in 3 concentric rings (ELIGANT-TN). Here we present the experimental setup and discuss the role of the 13C contamination which effects the measurements in the low-energy region. Energy-dispersive X-ray spectroscopy carried out before and after the experiment suggested an increase in the 13C concentration during the experiment. [ABSTRACT FROM AUTHOR]

Published
2024
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7. Numerical parameterization of chemical-vapor-deposited (CVD) single-crystal diamond for device simulation and analysis

Author

Rashid, S.J., Tajani, A., Amaratunga, G.A.J., Twitchen, D.J., Coulbeck, L., Taylor, P., Udrea, F., Butler, T., Chamund, D., Rupesinghe, N.L., Brezeanu, M., Isberg, J., Garraway, A., Dixon, M., and Balmer, R.S.

Subjects
Boron -- Electric properties, Boron -- Atomic properties, Chemical vapor deposition -- Usage, Diamond crystals -- Structure, Diamond crystals -- Electric properties, Diamond crystals -- Thermal properties, Diamonds -- Structure, Diamonds -- Electric properties, Diamonds -- Thermal properties, Voltage -- Evaluation, Business, Electronics, Electronics and electrical industries
Abstract

Chemical-vapor-deposited single-crystal diamonds for use in high voltage and high-temperature applications are described. These models provide an explanation for its different conduction, which is due to incomplete ionization of boron dopant, but the limited voltage handling capacity of the CVD is due to residual defects in the intrinsic voltage blocking layer in the structure.

Published
2008

20. Nanostructured metal oxides semiconductors for oxygen chemiresistive sensing

Author

Şerban, B. C., Brezeanu, M., Luca, A. D., Ali, S. Z., Octavian Buiu, Cobianu, C., Stratulat, A., Udrea, F., Avramescu, V., Varachiu, N., Ionescu, O., Ionescu, G., De Luca, Andrea [0000-0002-9481-4747], Udrea, Florin [0000-0002-7288-3370], and Apollo - University of Cambridge Repository

Abstract

Nanostructured metal oxide semiconductors have been widely investigated and are commonly used in gas sensing structures. After a brief review which will be focused on chemiresistive oxygen sensing employing this type of sensing materials, for both room temperature and harsh environment applications (particularly, at high ambient temperature and high relative humidity levels), paper reports new results concerning O2detection of a structure using a sensing layer comprising nanostructured (typical grain size of 50 nm) SrTi0.6Fe0.4O2.8(STFO40), synthesized by sonochemical methods, mixed with single wall carbon nanotubes. The structure is a Microelectromechanical System (MEMS), based on a Silicon-on-Insulator (SOI), Complementary Metal-Oxide-Semiconductor (CMOS)-compatible micro-hotplate, comprising a tungsten heater which allows an excellent control of the sensing layer working temperature. Oxygen detection tests were performed in both dry (RH = 0%) and humid (RH = 60%) nitrogen atmosphere, varying oxygen concentrations between 1% and 20% (v/v), at a constant heater temperature of 650 °C.

Published
2019
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24. Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis

Author

Rashid, S. J., Tajani, A., Twitchen, D. J., Coulbeck, L., Udrea, F., Butler, T., Rupesinghe, N. L., Brezeanu, M., Isberg, Jan, Garraway, A., Dixon, M., Balmer, R. S., Chamund, D., Taylor, P., Amaratunga, G. A. J., Rashid, S. J., Tajani, A., Twitchen, D. J., Coulbeck, L., Udrea, F., Butler, T., Rupesinghe, N. L., Brezeanu, M., Isberg, Jan, Garraway, A., Dixon, M., Balmer, R. S., Chamund, D., Taylor, P., and Amaratunga, G. A. J.

Abstract

High-quality electronic-grade intrinsic chemical-vapor-deposited (CVD) single-crystal diamond layers having exceptionally high carrier mobilities have been reported by Isberg et al. This makes the realization of novel electronic devices in diamond, particularly for high-voltage and high-temperature applications, a viable proposition. As such, material models which can capture the particular features of diamond as a semiconductor are required to analyze, optimize, and quantitatively design new devices. For example, the incomplete ionization of boron in diamond and the transition to metallic conduction in heavily boron-doped layers require accurate carrier freeze-out models to be included in the simulation of diamond devices. Models describing these phenomena are proposed in this paper and include numerical approximation of intrinsic diamond which is necessary to formulate doping- and temperature-dependent mobility models. They enable a concise numerical description of single-crystal diamond which agrees with data obtained from material characterization. The models are verified by application to new Schottky m-i-p(+) diode structures in diamond. Simulated forward characteristics show excellent correlation with experimental measurements. In spite of the lack of impact ionization data for single-crystal diamond, approximation of avalanche coefficient parameters from other wide-bandgap semiconductors has also enabled the reverse blocking characteristics of diamond diodes to be simulated. Acceptable agreement with breakdown voltage from experimental devices made with presently available single-crystal CVD diamond is obtained.

Published
2008
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26. Modelling of single-crystal diamond Schottky diodes for high-voltage applications

Author

Rashid, S. J., Tajani, A., Coulbeck, L., Brezeanu, M., Garraway, A., Butler, T., Rupesinghe, N. L., Twitchen, D. J., Amaratunga, G. A. J., Udrea, F., Taylor, P., Dixon, M., Isberg, Jan, Rashid, S. J., Tajani, A., Coulbeck, L., Brezeanu, M., Garraway, A., Butler, T., Rupesinghe, N. L., Twitchen, D. J., Amaratunga, G. A. J., Udrea, F., Taylor, P., Dixon, M., and Isberg, Jan

Abstract

The modelling of Schottky m-i-p(+) (SMIP) diodes fabricated on chemical vapour deposited (CVD) single crystal (SC) diamond intrinsic layers grown on highly boron doped CVD diamond Substrates is reported. Variations in intrinsic layer thickness, Schottky metal type and operating temperature have been included in the analysis. Numerical models that take into account the activation of dopants, concentration and temperature dependant mobility and avalanche coefficients have been derived to successfully simulate experimental diamond devices.

Published
2006
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27. Numerical and Experimental Analysis of Single Crystal Diamond Schottky Barrier Diodes

Author

Rashid, S.J., Coulbeck, L., Tajani, A., Brezeanu, M., Garraway, A., Butler, T., Rupesinghe, N.L., Twitchen, D.J., Amaratunga, G.A.J., Udrea, F., Taylor, P., Dixon, M., Isberg, Jan, Rashid, S.J., Coulbeck, L., Tajani, A., Brezeanu, M., Garraway, A., Butler, T., Rupesinghe, N.L., Twitchen, D.J., Amaratunga, G.A.J., Udrea, F., Taylor, P., Dixon, M., and Isberg, Jan

Published
2005

28. SOI sensing technologies for harsh environment

Author

Udrea, F., primary, Ali, S. Z., additional, Brezeanu, M., additional, Dumitru, V., additional, Buiu, O., additional, Poenaru, I., additional, Chowdhury, M. F., additional, De Luca, A., additional, and Gardner, J. W., additional

Published
2012
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34. Hypersensitivity Reactions to Neuromuscular Blocking Agents

Author

Mertes, P., primary, Aimone-Gastin, I., additional, Gueant-Rodriguez, R., additional, Mouton-Faivre, C., additional, Audibert, G., additional, O'Brien, J., additional, Frendt, D., additional, Brezeanu, M., additional, Bouaziz, H., additional, and Gueant, J., additional

Published
2008
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40. Single crystal diamond M–i–P diodes for power electronics

Author

Brezeanu, M., primary, Butler, T., additional, Rupesinghe, N., additional, Rashid, S.J., additional, Avram, M., additional, Amaratunga, G.A.J., additional, Udrea, F., additional, Dixon, M., additional, Twitchen, D., additional, Garraway, A., additional, Chamund, D., additional, and Taylor, P., additional

Published
2007
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