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Your search keyword '"Breyer, E. T."' showing total 7 results
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7 results on '"Breyer, E. T."'

1. Next Generation Ferroelectric Memories enabled by Hafnium Oxide

Author

Mikolajick, T., Schroeder, U., Lomenzo, P. D., Breyer, E. T., Mulaosmanovic, H., Hoffmann, M., Mittmann, T., Mehmood, F., Max, B., Slesazeck, S., Mikolajick, T., Schroeder, U., Lomenzo, P. D., Breyer, E. T., Mulaosmanovic, H., Hoffmann, M., Mittmann, T., Mehmood, F., Max, B., and Slesazeck, S.

Abstract

Ferroelectrics are theoretically an ideal solution for low write power nonvolatile memories. However, the complexity of ferroelectric perovskites has hindered the scaling of such devices to competitive feature sizes. The discovery of ferroelectricity in hafnium oxide solved this issue. Ferroelectric memories in three variants, capacitor based ferroelectric RAM, ferroelectric field effect transistors and ferroelectric tunneling junctions have become competitors for future memory solutions again. In this paper, the basics and current status of hafnium oxide based ferroelectric memory devices is described and recent results are shown.

Published
2020

2. Demonstration of BEOL-compatible ferroelectric Hf0.5Zr0.5O2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications

Author

Francois, T., primary, Pellissier, C., additional, Slesazeck, S., additional, Havel, V., additional, Richter, C., additional, Makosiej, A., additional, Giraud, B., additional, Breyer, E. T., additional, Materano, M., additional, Chiquet, P., additional, Bocquet, M., additional, Grenouillet, L., additional, Nowak, E., additional, Schroeder, U., additional, Gaillard, F., additional, Coignus, J., additional, Blaise, P., additional, Carabasse, C., additional, Vaxelaire, N., additional, Magis, T., additional, Aussenac, F., additional, and Loup, V., additional

Published
2019
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4. Demonstration of versatile nonvolatile logic gates in 28nm HKMG FeFET technology

Author

Breyer, E. T., Mulaosmanovic, H., Slesazeck, S., and Mikolajick, T.

Subjects
ddc:621.3, Logikgatter, Schwellenspannung, nichtflüchtiger Speicher, Feldeffekttransistoren, Logikanordnungen, Spannungsmessung, Logic gates, Threshold voltage, Nonvolatile memory, Field effect transistors, Logic arrays, Voltage measurement, Hardware_LOGICDESIGN
Abstract

Logic-in-memory circuits promise to overcome the von-Neumann bottleneck, which constitutes one of the limiting factors to data throughput and power consumption of electronic devices. In the following we present four-input logic gates based on only two ferroelectric FETs (FeFETs) with hafnium oxide as the ferroelectric material. By utilizing two complementary inputs, a XOR and a XNOR gate are created. The use of only two FeFETs results in a compact and nonvolatile design. This realization, moreover, directly couples the memory and logic function of the FeFET. The feasibility of the proposed structures is revealed by electrical measurements of HKMG FeFET memory arrays manufactured in 28nm technology.

Published
2018

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