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International audience; Electronics components and devices, including equipment to systems, are fabricated from materials and structures that degrade with time under normal operational condition. It is necessary to anticipate and quantify system failure occurrence but the goal of “reliability engineering” is to clarify first the failure paradigm in term of statistics and Physics of Failure or simply Part Count approach. Many statistical approaches and underlying mathematics have been developed in the past decades of the last century to describe failure rates and the well-known bathtub curve showing a schematic of failure rate behavior with time.From Wikipedia definition, predictive (or logical) analysis encompasses a variety of techniques derived from statistics, data extraction and game theory that analyze past and present facts to make predictive assumptions about future events. In this applied reliability chapter, we would like to share our perception on the experimentally development applied on existing reliability and maintenance paradigms developed since decades by many authors and papers. This Part I titled “Reliability Basic Tools for SHM protocols” aims to remind a) how applied engineering in predicting failure and monitoring SHM of electronic equipment and systems are implemented and b) to present basic statistic tools defined for reliability modelling implementation and studies related to active microelectronic parts. The second Part II is dedicated to the experimental application titled “Applied Engineering on Physics-of-Healthy and SHM on microelectronic equipment for aeronautic, space, automotive and transport operation” addressing how innovative technologies and Commercial-Off-The-Shelf (COTS) devices are pondered.

Aging phenomena are first evidenced at device level to cell level considering a precise knowledge of the leading degradation mechanisms and interactions useful for processing optimization focusing performance vs. reliability requirements. Digital to analog circuits are then studied for product qualification based on the former results that needs specific methodologies adapted case by case with mission profile and the correlation between sensing parameter, accelerating factors for lifetime margin. This represents huge challenges for operational lifetime determination, considering top down and bottom up consistencies for relevant product qualification.

International audience; Electronics components and devices, including equipment to systems, are fabricated from materials and structures that degrade with time under normal operational condition. It is necessary to anticipate and quantify system failure occurrence but the goal of "reliability engineering" is to clarify first the failure paradigm in term of statistics and Physics of Failure or simply Part Count approach. Many statistical approaches and underlying mathematics have been developed in the past decades of the last century to describe failure rates and the well-known bathtub curve showing a schematic of failure rate behavior with time. From Wikipedia definition, predictive (or logical) analysis encompasses a variety of techniques derived from statistics, data extraction and game theory that analyze past and present facts to make predictive assumptions about future events. In this applied reliability chapter, we would like to share our perception on the experimentally development applied on existing reliability and maintenance paradigms developed since decades by many authors and papers. This Part I titled "Reliability Basic Tools for SHM protocols" aims to remind a) how applied engineering in predicting failure and monitoring SHM of electronic equipment and systems are implemented and b) to present basic statistic tools defined for reliability modelling implementation and studies related to active microelectronic parts. The second Part II is dedicated to the experimental application titled "Applied Engineering on Physics-of-Healthy and SHM on microelectronic equipment for aeronautic, space, automotive and transport operation" addressing how innovative technologies and Commercial-Off-The-Shelf (COTS) devices are pondered.

International audience; The study of parameter drift due to interface defect generation in “Off” mode or near Vth is very complex, because it is often concomitant with hot hole trapping which induces turnaround effects. Improving device aging models requires to consider hot-carrier degradation (HCD) in “On/Off states”, interaction of these different modes as well as any dynamic effects. The DC characterization of HCD modes might be insufficient, it is necessary to verify the quasi-static assumption made when we seek to model the degradation under realistic dynamic stress by a secession of static states. We present a detailed analysis of the interactions of HCD under “On” state and “Off” state”. Pulsed stressing are used to analyze the frequency dependence of HCD and “Off-state”. Such approach is required for accurate AC RF ageing modeling.

International audience; Extended Drain MOS (EDMOS) transistors were studied about hot-carrier (HC) degradation and its involvement in hard breakdown (BD) events as these smart power devices represent a big challenge to optimize under Off/On mode switching in RF circuits. N-channel devices with gate-length LG=0.5µm and two gate-oxide thicknesses were tested Tox= 2.3nm (GO1) and 8.5nm (GO2). The sensitivity to BD between Off-mode and HC is pointed out in GO1 through the hot-hole injections (HHI) that are involved as a function of gate-voltage VGS = VTH and VGmax where the VTH case induces HC damage that can be used with series resistance increase (RSD ) to detect BD events in the drift region. Hole trapping and interface traps are generated leading to the dominant effect of HHI, with very close generation rates between Off- and On- mode stressing. This can be used to prevent circuit aging giving warning level for confidence in AC lifetime for power amplifiers class E and class A.

International audience; Improving device aging models requires to consider hot-carrier degradation (HCD) between On/Off modes and interaction of these different damage rate mechanisms as well as the dynamic effects. As DC characterization of HCD modes might be insufficient, it is rather necessary to check the quasi-static validity when we seek to model the degradation under realistic dynamic stress by a succession of static states. We present a detailed analysis of the interactions of HCD under On and Off state in N-FETs devices using a compact modelling based on an empirical model. Pulsed stressing by measure-stress-measure method is further used to analyze the switching time dependence of HCD and Off modes for an accurate AC RF ageing modeling. This reliability methodology is useful to close the gap between the simple models used for DC HCD characterization and the degradation involved in power amplifiers under AC RF signals.

In this work, we have demonstrated that many elements are needed on top of conventional foundry reliability knowledge to enable robust automotive products in compliance with all restrictive norms. For intrinsic reliability, both reliability models (a design compatible WLR description), and dynamic aging compensation schemes are required. For extrinsic failures, screening procedures require well documented usage and are shown in use for volume production to bring the failure rate level down below 1 ppm automotive target. Altogether, the global approach developed in STMicroelectronics enable robust automotive products based on controlled and validated procedures.