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3. The Heat Capacity of Si, Ge, GaAs and InP Semiconductors at High Temperatures

Author

Fnaiech Mustapha, Boussaid Ahlem, and Boussaid Olfa

Subjects
010302 applied physics, Materials science, Specific heat, Condensed matter physics, business.industry, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Heat capacity, Electronic, Optical and Magnetic Materials, symbols.namesake, Semiconductor, Lattice (order), 0103 physical sciences, symbols, 0210 nano-technology, business, Quantum, Debye model
Abstract

The Debye model for the specific heat is changed keeping all the assumptions except that each mode is treated here as distorted quantum harmonic q-oscillator. It also takes into account the optical branches. The specific heat of the network is evaluated within low and high temperatures. The specific heat is studied in the case of semiconductor metals Si, Ge, GaAs and InP. The lattice heat capacities for different metals are calculated using Mathematica simulation.

Published
2018

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