1. Phosphorus oxide gate dielectric for black phosphorus field effect transistors
- Author
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Dickerson, W., Tayari, V., Fakih, I., Korinek, A., Caporali, M., Serrano-Ruiz, M., Peruzzini, M., Heun, S., Botton, G. A., and Szkopek, T.
- Subjects
Condensed Matter - Mesoscale and Nanoscale Physics ,Physics - Applied Physics - Abstract
The environmental stability of the layered semiconductor black phosphorus (bP) remains a challenge. Passivation of the bP surface with phosphorus oxide, POx, grown by a reactive ion etch with oxygen plasma is known to improve photoluminescence efficiency of exfoliated bP flakes. We apply phosphorus oxide passivation in the fabrication of bP field effect transistors using a gate stack consisting of a POx layer grown by reactive ion etching followed by atomic layer deposition of Al2O3. We observe room temperature top-gate mobilities of 115 cm2/Vs in ambient conditions, which we attribute to the low defect density of the bP/POx interface.
- Published
- 2018
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