26 results on '"Borghello, Giulio"'
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2. Characteristics and ultra-high total ionizing dose response of 22 nm fully depleted silicon-on-insulator
3. Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics
4. TA05-101: EXP28 - Proton Test (EXP28-PT)
5. TA04-65: EXP28 - Single Event Effect (EXP28-SEE)
6. Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs
7. Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs
8. Generic Analog 8 Bit DAC IP Block in 28nm CMOS for the High Energy Physics Community
9. Effects of Bias and Temperature on the Dose-Rate Sensitivity of 65-nm CMOS Transistors
10. Strategic R&D Programme on Technologies for Future Experiments - Annual Report 2020
11. Ionizing radiation effects in nanoscale CMOS technologies exposed to ultra-high doses
12. Forward and Reverse Operation of Enclosed-Gate MOSFETs and Sensitivity to High Total Ionizing Dose
13. Investigation of Scaling and Temperature Effects in Total Ionizing Dose (TID) Experiments in 65 nm CMOS
14. Total ionizing dose effects on analog performance of 65 nm bulk CMOS with enclosed-gate and standard layout
15. Charge Buildup and Spatial Distribution of Interface Traps in 65-nm pMOSFETs Irradiated to Ultrahigh Doses
16. Forward and Reverse Operation of Enclosed-Gate MOSFETs and Sensitivity to High Total Ionizing Dose
17. Characterization and Modeling of GigaRad-TID-Induced Drain Leakage Current in a 28 nm Bulk CMOS Technology
18. Characterization and Modeling of Gigarad-TID-Induced Drain Leakage Current of 28-nm Bulk MOSFETs
19. Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs
20. Modeling of High Total Ionizing Dose (TID) Effects for Enclosed Layout Transistors in 65 nm Bulk CMOS
21. Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses
22. Extending a 65nm CMOS process design kit for high total ionizing dose effects
23. Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses
24. Characterization of GigaRad Total Ionizing Dose and Annealing Effects on 28-nm Bulk MOSFETs
25. Influence of LDD Spacers and H+ Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses.
26. Extending a 65nm CMOS process design kit for high total ionizing dose effects
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