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Your search keyword '"Borany, J.V."' showing total 16 results
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16 results on '"Borany, J.V."'

5. Structural and optical studies of Pr implanted ZnO films subjected to a long-time or ultra-fast thermal annealing

Author

Ratajczak, R., primary, Mieszczynski, C., additional, Prucnal, S., additional, Guziewicz, E., additional, Stachowicz, M., additional, Snigurenko, D., additional, Gaca, J., additional, Wojcik, M., additional, Böttger, R., additional, Heller, R., additional, Skorupa, W., additional, Borany, J.V., additional, and Turos, A., additional

Published
2017
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6. Topotaxial growht of Ti2AlN by solid state reaction in AlN/Ti(0001) multilayer thin films

Author

Hoeglund, C., Beckers, M., Schell, N., Borany, J.v., Birch, J., and Hultmann, L.

Subjects
ddc:539.1
Abstract

The formation of Ti2AlN by solid state reaction between layers of wurtzite-AlN and -Ti was characterized by in situ x-ray scattering. The sequential deposition of these layers by dual magnetron sputtering onto Al2O3(0001) at 200 °C yielded smooth, heteroepitaxial (0001) oriented films, with abrupt AlN/Ti interfaces as shown by x-ray reflectivity and Rutherford backscattering spectroscopy. Annealing at 400 °C led to AlN decomposition and diffusion of released Al and N into the Ti layers, with formation of Ti3AlN. Further annealing at 500 °C resulted in a phase transformation into Ti2AlN(0001) after only 5 min.

Published
2007
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7. 90: Comparison of Scintillation Detectors based on BGO and LSO for Prompt Gamma Imaging in Particle Therapy

Author

Hueso-González, F., primary, Bemmerer, D., additional, Berthel, M., additional, Biegun, A.K., additional, Borany, J.v., additional, Dendooven, P., additional, Dreyer, A., additional, Enghardt, W., additional, Fiedler, F., additional, Golnik, C., additional, Heidel, K., additional, Kormoll, T., additional, Petzoldt, J., additional, Römer, K., additional, Schmidt, K., additional, Schwengner, R., additional, Wagner, A., additional, Wagner, L., additional, and Pausch, G., additional

Published
2014
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8. Topotaxial growth of Ti2AlN by solid state reaction in AlN/Ti(0001) multilayer thin films

Author

Höglund, Carina, Beckers, Manfred, Schell, Norbert, Borany, J.v., Birch, Jens, Hultman, Lars, Höglund, Carina, Beckers, Manfred, Schell, Norbert, Borany, J.v., Birch, Jens, and Hultman, Lars

Abstract

The formation of Ti2AlN by solid state reaction between layers of wurtzite-AlN and α-Ti was characterized by in situ x-ray scattering. The sequential deposition of these layers by dual magnetron sputtering onto Al2O3(0001) at 200 °C yielded smooth, heteroepitaxial (0001) oriented films, with abrupt AlN/Ti interfaces as shown by x-ray reflectivity and Rutherford backscattering spectroscopy. Annealing at 400 °C led to AlN decomposition and diffusion of released Al and N into the Ti layers, with formation of Ti3AlN. Further annealing at 500 °C resulted in a phase transformation into Ti2AlN(0001) after only 5 min.

Published
2007
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13. Microstructure and electrical properties of gate SiO2containing Ge nanoclusters for memory applications

Author

Thees, H.-J, Wittmaack, M, Stegemann, K.-H, Borany, J.v, Heinig, K.-H, and Gebel, T

Abstract

MOSFETs with gateoxides containing nanoclusters (Si, Ge, Sn, Sb) fabricated with different techniques (implantation, LPCVD, sputtering) are very promising for future memories. This contribution reports on results obtained on Ge-implanted MOS capacitors. By varying the implantation and annealing parameters, the Ge depth profile and the cluster size and distribution can be controlled. The experimental results are explained by a theoretical model, which is based on TRIM calculations, rate-equation studies and 3D kinetic Monte Carlo simulations. The electrical properties of gate SiO2containing Ge nanoclusters are investigated in detail with emphasis on its feasibility for memory applications.

Published
2000
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16. Millisecond flash lamp annealing for LaLuO3 and LaScO3 high-k dielectrics.

Author

Lehmann, J., Hübner, R., Borany, J.V., Skorupa, W., Mikolajick, T., Schäfer, A., Schubert, J., and Mantl, S.

Subjects
*INCOHERENT light annealing, *LANTHANUM compounds, *DIELECTRICS, *TITANIUM nitride, *METAL oxide semiconductor capacitors, *STRAY currents
Abstract

Highlights: [•] LaLuO3 and LaScO3 layers were treated by flash lamp annealing. [•] FLA does not affect the very low leakage currents or the k-values of and LaScO3. [•] TiN oxidation in a gate-first processing scheme can be prevented by a Si-cap on TiN. [•] MOS capacitors are evaluated for oxide charges. [Copyright &y& Elsevier]

Published
2013
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