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The gate oxide lifetime in 4H-SiC power MOSFETs is typically assessed at fixed and constant gate bias stress, monitoring the time-dependent dielectric breakdown (TDDB).

In this work, the origin of the dielectric breakdown of 4H-SiC power MOSFETs was studied at the nanoscale, analyzing devices that failed after extremely long (three months) of high temperature reverse bias (HTRB) stress. A one-to-one correspondence between the location of the breakdown event and a threading dislocation propagating through the epitaxial layer was found. Scanning probe microscopy (SPM) revealed the conductive nature of the threading dislocation and a local modification of the minority carriers concentration. Basing on these results, the role of the threading dislocation on the failure of 4H-SiC MOSFETs could be clarified.

The dielectric breakdown (BD) of thermal oxide (SiO2) grown on cubic silicon carbide (3C-SiC) was investigated comparing the electrical behavior of macroscopic metal-oxidesemiconductor (MOS) capacitors with nanoscale current and capacitance mapping using conductive atomic force (C-AFM) and scanning capacitance microscopy (SCM). Spatially resolved statistics of the oxide BD events by C-AFM revealed that the extrinsic premature BD is correlated to the presence of peculiar extended defects, the anti-phase boundaries (APBs), in the 3C-SiC layer. SCM analyses showed a larger carrier density at the stacking faults (SFs) the 3C-SiC, that can be explained by a locally enhanced density of states in the conduction band. On the other hand, a local increase of minority carriers concentration was deduced for APBs, indicating that they behave as conducting defects having also the possibility to trap positive charges. The results were explained with the local electric field enhancement in correspondence of positively charged defects.

We present a stochastic simulation method designed to study at an atomic resolution the growth kinetics of compounds characterized by the sp3-type bonding symmetry. Formalization and implementation details are discussed for the particular case of the 3C-SiC material. A key feature of our numerical tool is the ability to simulate the evolution of both point-like and extended defects, whereas atom kinetics depend critically on process-related parameters. In particular, the simulations can describe the surface state of the crystal and the generation/evolution of defects as a function of the initial substrate condition and the calibration of the simulation parameters. We demonstrate that quantitative predictions of the microstructural evolution of the studied systems can be readily compared with the structural characterization of actual processed samples.

In spite of its great promises for energy efficient power conversion, the electronic quality of cubic silicon carbide (3C-SiC) on silicon is currently limited by the presence of a variety of extended defects in the heteroepitaxial material. However, the specific role of the different defects on the electronic transport is still under debate. In this work, a macro- and nano-scale characterization of Schottky contacts on 3C-SiC/Si was carried out, to elucidate the impact of the anti-phase-boundaries (APBs) and stacking-faults (SFs) on the forward and reverse current-voltage characteristics of these devices. Current mapping of 3C-SiC by conductive atomic force microscopy (CAFM) directly showed the role of APBs as the main defects responsible of the reverse bias leakage, while both APBs and SFs were shown to work as preferential current paths under forward polarization. Distinct differences between these two kinds of defects were also confirmed by electronic transport simulations of a front-to-back contacted SF and APB. These experimental and simulation results provide a picture of the role played by different types of extended defects on the electrical transport in vertical or quasi-vertical devices based on 3C-SiC/Si, and can serve as a guide for improving material quality by defects engineering., Comment: 20 pages, 7 figures

This work reports on the morphological and electrical properties of Ni-based back-side Ohmic contacts formed by laser annealing process for SiC power diodes. Nickel films, 100 nm thick, have been sputtered on the back-side of heavily doped 110 um 4H-SiC thinned substrates after mechanical grinding. Then, to achieve Ohmic behavior, the metal films have been irradiated with an UV excimer laser with a wavelength of 310 nm, an energy density of 4.7 J/cm2 and pulse duration of 160 ns. The morphological and structural properties of the samples were analyzed by means of different techniques. Nanoscale electrical analyses by conductive Atomic Force Microscopy (C-AFM) allowed correlating the morphology of the annealed metal films with their local electrical properties. Ohmic behavior of the contacts fabricated by laser annealing have been investigated and compared with the standard Rapid Thermal Annealing (RTA) process. Finally, it was integrated in the fabrication of 650V SiC Schottky diodes.

We present an agent based model of the Air Traffic Management socio-technical complex system that aims at modeling the interactions between aircrafts and air traffic controllers at a tactical level. The core of the model is given by the conflict detection and resolution module and by the directs module. Directs are flight shortcuts that are given by air controllers to speed up the passage of an aircraft within a certain airspace and therefore to facilitate airline operations. Conflicts resolution between flight trajectories can arise during the en-route phase of each flight due to both not detailed flight trajectory planning or unforeseen events that perturb the planned flight plan. Our model performs a local conflict detection and resolution procedure. Once a flight trajectory has been made conflict-free, the model searches for possible improvements of the system efficiency by issuing directs. We give an example of model calibration based on real data. We then provide an illustration of the capability of our model in generating scenario simulations able to give insights about the air traffic management system. We show that the calibrated model is able to reproduce the existence of a geographical localization of air traffic controllers' operations. Finally, we use the model to investigate the relationship between directs and conflict resolutions (i) in the presence of perfect forecast ability of controllers, and (ii) in the presence of some degree of uncertainty in flight trajectory forecast., Comment: 18 pages, 2 tables, 12 figures

Understanding the relation between planned and realized flight trajectories and the determinants of flight deviations is of great importance in air traffic management. In this paper we perform an in depth investigation of the statistical properties of planned and realized air traffic on the German airspace during a 28 day periods, corresponding to an AIRAC cycle. We find that realized trajectories are on average shorter than planned ones and this effect is stronger during night-time than daytime. Flights are more frequently deviated close to the departure airport and at a relatively large angle to destination. Moreover, the probability of a deviation is higher in low traffic phases. All these evidences indicate that deviations are mostly used by controllers to give directs to flights when traffic conditions allow it. Finally we introduce a new metric, termed difork, which is able to characterize navigation points according to the likelihood that a deviation occurs there. Difork allows to identify in a statistically rigorous way navigation point pairs where deviations are more (less) frequent than expected under a null hypothesis of randomness that takes into account the heterogeneity of the navigation points. Such pairs can therefore be seen as sources of flexibility (stability) of controllers traffic management while conjugating safety and efficiency., Comment: 16 pages; 11 figures; 3 tables

Surface diffusion has an impact on the lateral resolution of nanostructures in bottom-up atom nanofabrication. In this paper we study the effects of the gallium atoms self-assembled on silicon surfaces (100) patterned with trenches at different slopes. These particular substrate morphologies have been made to enable an effective deposition rate variation along the surface. In this way we experimentally mimic the effect of the atomic flux modulation created by standing wave during an atom nanofabrication experiment. Even if we observe self organization of gallium atoms on the surface, we conclude that the nano-islands are not affected by surface diffusion processes and the effective variation of the deposition rate per unit area is the dominant factor affecting the growth differences along the surface. This result demonstrates that the gallium atoms self-organization should not prevent the observation of a periodic nano-patterning created by atom nano-fabrication techniques., Comment: 7 pages, 5 figures, EMRS conference proceed