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We report on the effect of electron and proton irradiation on effective minority carrier lifetimes (${\tau}_{eff}$) in p-type Ge wafers. Minority carrier lifetimes are assessed using the microwave-detected photoconductance decay (${\mu}$W-PCD) method. We examine the dependence of ${\tau}_{eff}$ on the p-type doping level and on electron and proton radiation fluences at 1 MeV. The measured ${\tau}_{eff}$ before and after irradiation are used to estimate the minority carriers diffusion lengths, which is an important parameter for solar cell operation. We observe ${\tau}_{eff}$ ranging from 50 to 230 ${\mu}$s for Ge doping levels between 1E17 and 1E16 at.cm$^{-3}$, corresponding to diffusion lengths of 500-1400 ${\mu}$m. A separation of ${\tau}_{eff}$ in Ge bulk lifetime and surface recombination velocity is conducted by irradiating Ge lifetime samples of different thicknesses. The possible radiation-induced defects are discussed on the basis of literature.

Recent developments have renewed the demand for solar cells with increased tolerance to radiation damage. To investigate the specific irradiation damage of 1 MeV electron irradiation in GaInAsP lattice matched to InP for varying In and P contents, a simulation based analysis is employed: by fitting the quantum efficiency and open-circuit voltage simultaneously before and after irradiation, the induced changes in lifetime are detected. Furthermore, the reduction of irradiation damage during regeneration under typical satellite operating conditions for GEO missions (60{\deg}C and AM0 illumination) is investigated. A clear decrease of the radiation damage is observed after post irradiation regeneration. This regeneration effect is stronger for increasing InP-fraction. It is demonstrated that the irradiation induced defect recombination coefficient for irradiation with 1 MeV electrons after regeneration for 216 hours can be described with a linear function of InP-fraction between 1*10$^{-5}$ cm$^2$/s for GaAs and 7*10$^{-7}$ cm$^2$/s for InP. The results show that GaInAsP is a promising material for radiation hard space solar cells., Comment: Accepted manuscript; to be published in Solar Energy Materials and Solar Cells

The relationship between the luminescence at 1.9 eV and the absorption bands at 2.0 eV and at 4.8 eV were investigated in a wide variety of synthetic silica samples exposed to different gamma- and beta-ray irradiation doses. We found that the intensities of these optical bands are linearly correlated in agreement with the model in which they are assigned to a single defect. This finding allows to determine spectroscopic parameters related to optical transitions efficiency: the oscillator strength of the 4.8 eV results ~200 times higher than that of the 2.0 eV; the 1.9 eV luminescence quantum yield under 4.8 eV excitation is lower (by a factor ~3) than that under 2.0 eV excitation. These results are consistent with the energetic level scheme, proposed in literature for non bridging oxygen hole center, and account for the excitation/luminescence pathways occurring after UV and visible absorption, Comment: 5 figures