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7. Aging and failure mechanisms of SiC Power MOSFETs under repetitive short- circuit pulses of different duration

Author

Fayyaz, A, Boige, F., Borghese, A, Guibaud, G, Chazal, V., Castellazzi, A, Richardeau, F., Irace, A., Faculty of Engineering [Nottingham], University of Nottingham, UK (UON), Université de Nottingham - PEMCG, Centre National de la Recherche Scientifique (CNRS), University of Toulouse, LAboratoire PLasma et Conversion d'Energie (LAPLACE), Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées, Frederico II University, THALES COMMUNICATIONS & SECURITY, THALES, Kyoto University Advanced Science (KUAS), Convertisseurs Statiques (LAPLACE-CS), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Department of Electronics and Telecommunication Engineering, Università degli studi di Napoli Federico II, Universita Frederico II, Convertisseurs Statiques (CS), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse III - Paul Sabatier (UT3), and Richardeau, Frédéric

Subjects
switching cells. I, P-IGBT, monolithic integration, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, N-VDMOS, power conversion, [SPI.NRJ]Engineering Sciences [physics]/Electric power, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract

International audience; With relevance to their short-circuit (SC) failure mode, silicon carbide (SiC) power MOSFETs can be broadly grouped into two main categories: Fail-To-Open (FTO) and Fail-To-Short (FTS). The two different behaviors are exemplified in the results of Fig. 1 a): the former involves a short circuit between the gate and source terminals, which effectively shuts-down the device; the latter features current thermal runaway and collapse of the drain-source voltage, VDS. The specific failure signature is extremely relevant from an application perspective, with a clear preference for FTO type devices, since FTS has the twofold negative implication of discharging any energy storage components (e.g., capacitors) connected to the switches, with oftentimes explosion-like characteristics, and of loss of functionality of a whole module in the case of parallel multi-chip architectures. A study conducted on a number of 1.2 kV-rated commercial devices has produced the results summarized in Fig.

Published
2019

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