1. Nanogranular MgB2 thin films on SiC buffered Si substrates prepared by in-situ method
- Author
-
Chromik, S., Huran, J., Strbik, V., Spankova, M., Vavra, I., Bohne, W., Rohrich, J., Strub, E., Kovac, P., and Stancek, S.
- Subjects
Condensed Matter - Superconductivity ,Condensed Matter - Materials Science - Abstract
MgB2 thin films were deposited on SiC buffered Si substrates by sequential electron beam evaporation of B-Mg bilayer followed by in-situ annealing. The application of a SiC buffer layer enables the maximum annealing temperature of 830 C. The Transmission Electron Microscopy analysis confirms the growth of a nanogranular MgB2 film and the presence of a Mg2Si compound at the surface of the film. The 150-200 nm thick films show a maximum zero resistance critical temperature TC0 above 37 K and a critical current density JC ~ 106 A/cm2 at 11K., Comment: 7 pages, 6 figures, submitted to Applied Physics Letters
- Published
- 2005
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