Search

Your search keyword '"Bobrov, Mikhail"' showing total 31 results
Start Over Author "Bobrov, Mikhail"
31 results on '"Bobrov, Mikhail"'

1. Lasing of Quantum-Dot Micropillar Lasers under Elevated Temperatures

Author

Babichev, Andrey, Makhov, Ivan, Kryzhanovskaya, Natalia, Blokhin, Alexey, Zadiranov, Yuriy, Salii, Yulia, Kulagina, Marina, Bobrov, Mikhail, Vasiliev, Alexey, Blokhin, Sergey, Maleev, Nikolay, Tchernycheva, Maria, Karachinsky, Leonid, Novikov, Innokenty, and Egorov, Anton

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Physics - Optics
Abstract

A comprehensive numerical modelling of microcavity parameters for micropillar lasers with optical pumping was presented. The structure with a hybrid dielectric-semiconductor top mirror has a significantly higher calculated quality-factor (~65000 for 5 $\mu$m pillar) due to better vertical mode confinement. The minimum laser threshold (~370 $\mu$W for 5 $\mu$m pillar) coincided with a temperature of 130 K, which is close to zero gain to cavity detuning. Lasing up to 220 K was demonstrated with a laser threshold of about 2.2 mW.

Published
2024

2. Low-Threshold Surface-Emitting Whispering-Gallery Mode Microlasers

Author

Babichev, Andrey, Makhov, Ivan, Kryzhanovskaya, Natalia, Troshkov, Sergey, Zadiranov, Yuriy, Salii, Yulia, Kulagina, Marina, Bobrov, Mikhail, Vasilev, Alexey, Blokhin, Sergey, Maleev, Nikolay, Karachinsky, Leonid, Novikov, Innokenty, and Egorov, Anton

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Physics - Optics
Abstract

We report on microlasers based on high-quality micropillars with lasing on whispering-gallery modes. Usage of low-absorbing Al$\scriptsize 0.2$Ga$\scriptsize 0.8$As\Al$\scriptsize 0.9$Ga$\scriptsize 0.1$As distributed Bragg reflectors as well as the smooth pillar sidewalls allows us to realize whispering-gallery modes lasing by excitation and collection of emission in the pillar axis direction. As a result, simultaneous whispering gallery modes lasing (comb-like structure) in the wavelength range of 930-970 nm is observed for 3-7 $\mu$m pillar diameters. Increase the temperature up to 130 K results single-mode lasing for 5 $\mu$m pillars with about 8000 cold cavity quality-factor and 240 $\mu$W estimated threshold excitation power.

Published
2024

4. High-speed MBE-grown 1550 nm wafer-fused VCSELs

Author

Sapunov, Georgiy, primary, Tian, Si Cong, additional, Blokhin, Sergei, additional, Kovach, Iakov, additional, Papylev, Denis, additional, Rochas, Stanislav, additional, Andryushkin, Vladislav, additional, Kolodeznyi, Evgenii, additional, Babichev, Andrey, additional, Gladyshev, Andrey, additional, Novikov, Innokenty, additional, Blokhin, Alexey, additional, Bobrov, Mikhail, additional, Maleev, Nikolay, additional, Voropaev, Kirill, additional, Ustinov, Victor, additional, Ahamed, Mansoor, additional, Shugurov, Konstantin, additional, Egorov, Anton, additional, Karachinsky, Leonid, additional, and Bimberg, Dieter, additional

Published
2024
Full Text
View/download PDF

7. High-speed MBE-grown 1550 nm wafer-fused VCSELs

Author

Lei, Chun, Choquette, Kent D., Sapunov, Georgiy, Tian, Si-Cong, Blokhin, Sergey, Kovach, Iakov, Papylev, Denis, Rochas, Stanislav, Andryushkin, Vladislav, Kolodeznyi, Evgenii, Babichev, Andrey, Gladyshev, Andrey, Novikov, Innokenty, Blokhin, Alexey, Bobrov, Mikhail, Maleev, Nikolay, Voropaev, Kirill, Ustinov, Victor, Ahamed, Mansoor, Shugurov, Konstantin, Egorov, Anton, Karachinsky, Leonid, and Bimberg, Dieter

Published
2024
Full Text
View/download PDF

8. Single-Mode High-Speed 1550 nm Wafer Fused VCSELs for Narrow WDM Systems

Author

Babichev, Andrey, primary, Blokhin, Sergey, additional, Gladyshev, Andrey, additional, Karachinsky, Leonid, additional, Novikov, Innokenty, additional, Blokhin, Alexey, additional, Bobrov, Mikhail, additional, Maleev, Nikolay, additional, Andryushkin, Vladislav, additional, Kolodeznyi, Evgenii, additional, Denisov, Dmitrii, additional, Kryzhanovskaya, Natalia, additional, Voropaev, Kirill, additional, Ustinov, Victor, additional, Egorov, Anton, additional, Li, Hui, additional, Tian, Si-Cong, additional, Han, Saiyi, additional, Sapunov, Georgiy, additional, and Bimberg, Dieter, additional

Published
2023
Full Text
View/download PDF

9. 1.55 μm optical-fiber transmitter based on vertical cavity surface emitting laser obtained by wafer fusion technology

Author

Kovach, Yakov, Blokhin, Sergey, Babichev, Andrey, Bobrov, Mikhail, Blokhin, Alexey, Gladyshev, Andrey, Novikov, Innokenty, Karachinsky, Leonid, Voropaev, Kirill, and Egorov, Anton

Subjects
спекание пластин, чирпинг-эффект, wafer-fusion, optical-fiber transmitter, chirping, data transmission, волоконно-оптический передатчик, VCSEL, передача данных, ВИЛ
Abstract

In this work, the static and dynamic characteristics of a 1.55 μm optical-fiber transmitter based on wafer-fused VCSEL were studied. The device demonstrated single-mode lasing with SMSR >30 dB over a wide range of currents, and the maximum optical output power at the fiber end more than 2.5 mW. The measured –3 dB modulation bandwidth exceeded 11 GHz, and the maximum bit rate achieved was 25 Gbps. Analysis of the lasing spectra under different amplitude modulations was carried out. Positive chirping (spectra broadening) and fiber chromatic dispersion were limiting factors for the data transmission over SMF-28 fiber., В работе были исследованы статические и динамические характеристики оптоволоконного передатчика на основе ВИЛ спектрального диапазона 1.55 мкм, полученного технологией спекания пластин. Прибор демонстрирует одномодовую генерацию с SMSR >30 дБ в широком диапазоне рабочих токов, а максимальная оптическая мощность на выходе волокна превышает 2.5 мВт. Измеренная эффективная частота модуляции превышает 11 ГГц, а максимальная достигнутая скорость передачи данных составила 25 Гбит/с. Был проведен анализ спектров излучения при различной амплитудной модуляции. Положительный чирпинг-эффект (уширение спектра) и хроматическая дисперсия волокна лимитируют дальность передачи данных.

Published
2023
Full Text
View/download PDF

10. 1300 nm VCSELS with active region based on InGaAs/InGaAlAs superlattice for long-distance transmission

Author

Andryushkin, Vladislav, Blokhin, Sergei, Bobrov, Mikhail, Blokhin, Alexey, Babichev, Andrey, Gladyshev, Andrey, Novikov, Innokenty, Karachinsky, Leonid, Kolodeznyi, Evgenii, Voropaev, Kirill, and Egorov, Anton

Subjects
вертикально-излучающие лазеры, buried tunnel junction, molecular-beam epitaxy, заращенный туннельный переход, vertical-cavity surface-emitting lasers, молекулярно-пучковая эпитаксия
Abstract

We present the comprehensive study of laser performance of 1300 nm wafer-fused vertical-cavity surface-emitting lasers. Lasers with 5µm buried tunnel junction diameter demonstrate a stable single mode operation in the wide temperature range with maximal output optical power of 6 mW and above 1.5 mW at 20 °C and 80 °C respectively. Based on small-signal analysis the maximal modulation frequency of 8 GHz at 20 °C was estimated. Further increase of the temperature up to 85 °C led to dropping of maximal small-signal modulation frequency down to ~6 GHz at -3dB level despite of remaining of rather high current modulation efficiency about ~2.7 GHz/mA^0.5., Представлены результаты комплексных исследований статических и динамических характеристик вертикально-излучающих лазеров спектрального диапазона 1300 нм, созданных по технологии спекания пластины оптического резонатора с пластинами распределенных отражателей, выращенных методом молекулярно-пучковой эпитаксии. Лазеры с диаметром мезы заращенного туннельного перехода 5 мкм продемонстрировали одномодовую лазерную генерацию в широком температурном диапазоне с максимальной выходной мощностью 6 мВт и 1,5 мВт при 20 °С и 85 °С соответственно. Достигнута максимальная частота модуляции 8 ГГц при температуре 20 °С. Дальнейшее увеличение температуры до 85 °С приводит к уменьшению максимальной частоты модуляции до ~6 ГГц на уровне модуляции -3дБ.

Published
2023
Full Text
View/download PDF

11. 1550 nm high-speed VCSELS based on compressively strained In(Al)GaAs QWs

Author

Rochas, Stanislav, Blokhin, Sergei, Babichev, Andrey, Karachinsky, Leonid, Novikov, Innokenty, Blokhin, Aleksey, Bobrov, Mikhail, Maleev, Nikolai, Andryushkin, Vladislav, Bougrov, Vladislav, Gladyshev, Andrey, Melnichenko, Ivan, Voropaev, Kirill, Zhumaeva, Irina, Ustinov, Victor, Li, Hiu, Tian, Si-Cong, Han, Saiyi, Sapunov, Georgiy, Egorov, Anton, and Bimberg, Dieter

Subjects
tunnel junction, туннельный переход, спекание пластин, strained quantum wells, wafer fusion, molecular-beam epitaxy, напряженные квантовые ямы, data transmission, VCSEL, молекулярно-пучковая эпитаксия, передача данных, ВИЛ
Abstract

High-speed vertical-cavity surface-emitting lasers of 1550 nm spectral range based on ten compressively strained In(Al)GaAs QWs were fabricated by molecular-beam epitaxy and direct double wafer-fusion technique. The devices demonstrate threshold current of 2 mA and maximum output optical power of 4.8 mW. The effect of saturable absorber was observed at a temperature above 50 °C. Small signal analysis revealed that modulation bandwidth f 3dB and the resonant frequency fR of 8 GHz and 12 GHz, respectively, can be reached for presented VCSELs design. The NRZ-mode data rate up to 20 Gbps at 20 °C across the distance of 1000 meters was demonstrated., Были изготовлены высокоскоростные вертикально излучающие лазеры (ВИЛ) спектрального диапазона 1550 нм на основе 10 напряженных In(Al)GaAs КЯ с использованием метода молекулярно-пучковой эпитаксии и двойного прямого молекулярного спекания эпитаксиальных пластин. Приборы демонстрируют пороговый ток 2 мА и максимальную выходную оптическую мощность 4,8 мВт. Эффект насыщающегося поглотителя наблюдался при температуре выше 50 °С. Малосигнальный анализ показал значения ширины полосы модуляции f 3dB и резонансной частоты fR 8 ГГц и 12 ГГц, соответственно. Была продемонстрирована скорость передачи данных до 20 Гбит/с в режиме NRZ при 20 °C на расстояние 1000 метров.

Published
2023
Full Text
View/download PDF

12. 20-Gbps 1300-nm range wafer-fused vertical-cavity surface-emitting lasers with InGaAs/InAlGaAs superlattice-based active region

Author

Blokhin, Sergey A., primary, Babichev, Andrey V., additional, Gladyshev, Andrey G., additional, Novikov, Innokenty I., additional, Blokhin, Alexey A., additional, Bobrov, Mikhail A., additional, Maleev, Nikolay A., additional, Andryushkin, Vladislav V., additional, Denisov, Dmitrii V., additional, Voropaev, Kirill O., additional, Ustinov, Victor M., additional, Bougrov, Vladislav E., additional, Egorov, Anton Yu., additional, and Karachinsky, Leonid Ya., additional

Published
2022
Full Text
View/download PDF

13. Impact of Device Topology on the Performance of High-Speed 1550 nm Wafer-Fused VCSELs.

Author

Babichev, Andrey, Blokhin, Sergey, Gladyshev, Andrey, Karachinsky, Leonid, Novikov, Innokenty, Blokhin, Alexey, Bobrov, Mikhail, Kovach, Yakov, Kuzmenkov, Alexander, Nevedomsky, Vladimir, Maleev, Nikolay, Kolodeznyi, Evgenii, Voropaev, Kirill, Vasilyev, Alexey, Ustinov, Victor, Egorov, Anton, Han, Saiyi, Tian, Si-Cong, and Bimberg, Dieter

Subjects
TOPOLOGY, ELECTROSTATIC discharges, SURFACE emitting lasers, QUANTUM wells, DATA transmission systems, INDIUM gallium arsenide, OPTICAL modulation
Abstract

A detailed experimental analysis of the impact of device topology on the performance of 1550 nm VCSELs with an active region based on thin InGaAs/InAlGaAs quantum wells and a composite InAlGaAs buried tunnel junction is presented. The high-speed performance of the lasers with L-type device topology (with the largest double-mesa sizes) is mainly limited by electrical parasitics showing noticeable damping of the relaxation oscillations. For the S-type device topology (with the smallest double-mesa sizes), the decrease in the parasitic capacitance of the reverse-biased p+n-junction region outside the buried tunnel junction region allowed to raise the parasitic cutoff frequency up to 13–14 GHz. The key mechanism limiting the high-speed performance of such devices is thus the damping of the relaxation oscillations. VCSELs with S-type device topology demonstrate more than 13 GHz modulation bandwidth and up to 37 Gbps nonreturn-to-zero data transmission under back-to-back conditions at 20 °C. [ABSTRACT FROM AUTHOR]

Published
2023
Full Text
View/download PDF

14. High Power Single Mode 1300-nm Superlattice Based VCSEL: Impact of the Buried Tunnel Junction Diameter on Performance

Author

Blokhin, Sergey A., primary, Babichev, Andrey V., additional, Gladyshev, Andrey G., additional, Karachinsky, Leonid Ya., additional, Novikov, Innokenty I., additional, Blokhin, Alexey A., additional, Bobrov, Mikhail A., additional, Maleev, Nikolay A., additional, Andryushkin, Vladislav V., additional, Denisov, Dmitrii V., additional, Voropaev, Kirill O., additional, Zhumaeva, Irina O., additional, Ustinov, Victor M., additional, Egorov, Anton Yu., additional, and Ledentsov, Nikolay N., additional

Published
2022
Full Text
View/download PDF

16. 1300-nm wafer-fused VCSELs with InGaAs/InAlGaAs superlattice-based active region

Author

Blokhin, Sergey A., primary, Ledentsov, Nikolay, additional, Rochas, Stanislav S., additional, Babichev, Andrey V., additional, Gladyshev, Andrey G., additional, Chorchos, Lukasz, additional, Makarov, Oleg Y., additional, Karachinsky, Leonid Ya, additional, Novikov, Innokenty I., additional, Blokhin, Alexey A., additional, Bobrov, Mikhail A., additional, Maleev, Nikolay A., additional, Andryushkin, Vladislav V., additional, Voropaev, Kirill O., additional, Zhumaeva, Irina O., additional, Ustinov, Victor M., additional, Egorov, Anton Yu., additional, and Ledentsov, Nikolay N., additional

Published
2022
Full Text
View/download PDF

17. LC-MS Analysis Revealed the Significantly Different Metabolic Profiles in Spent Culture Media of Human Embryos with Distinct Morphology, Karyotype and Implantation Outcomes

Author

Eldarov, Chupalav, primary, Gamisonia, Alina, additional, Chagovets, Vitaliy, additional, Ibragimova, Luiza, additional, Yarigina, Svetlana, additional, Smolnikova, Veronika, additional, Kalinina, Elena, additional, Makarova, Nataliya, additional, Zgoda, Victor, additional, Sukhikh, Gennady, additional, and Bobrov, Mikhail, additional

Published
2022
Full Text
View/download PDF

19. Methylation of the PTENP1 pseudogene as potential epigenetic marker of age-related changes in human endometrium

Author

Kovalenko, Tatyana F., primary, Morozova, Ksenia V., additional, Pavlyukov, Marat S., additional, Anufrieva, Ksenia S., additional, Bobrov, Mikhail Yu., additional, Gamisoniya, Alina M., additional, Ozolinya, Lyudmila A., additional, Dobrokhotova, Yulia E., additional, Shakhparonov, Mikhail I., additional, and Patrushev, Lev I., additional

Published
2021
Full Text
View/download PDF

20. Neuroprotective and neurotoxic effects of endocannabinoid-like compounds, N-arachidonoyl dopamine and N-docosahexaenoyl dopamine in differentiated cultures of induced pluripotent stem cells derived from patients with Parkinson’s disease

Author

Novosadova, Ekaterina, primary, Antonov, Stanislav, additional, Arsenyeva, Elena, additional, Kobylanskiy, Andrey, additional, Vanyushina, Yulia, additional, Malova, Tatyana, additional, Khaspekov, Leonid, additional, Bobrov, Mikhail, additional, Bezuglov, Vladimir, additional, Tarantul, Vyacheslav, additional, Illarioshkin, Sergey, additional, and Grivennikov, Igor, additional

Published
2021
Full Text
View/download PDF

23. 1300-nm wafer-fused VCSELs with InGaAs/InAlGaAs superlattice-based active region

Author

Lei, Chun, Choquette, Kent D., Graham, Luke A., Blokhin, Sergey A., Ledentsov, Nikolay, Rochas, Stanislav S., Babichev, Andrey V., Gladyshev, Andrey G., Chorchos, Łukasz, Makarov, Oleg Yu., Karachinsky, Leonid Ya., Novikov, Innokenty I., Blokhin, Alexey A., Bobrov, Mikhail A., Maleev, Nikolay A., Andryushkin, Vladislav V., Voropaev, Kirill O., Zhumaeva, Irina O., Ustinov, Victor M., Egorov, Anton Yu., and Ledentsov, Nikolay N.

Published
2022
Full Text
View/download PDF

25. Quantum dot semiconductor disk laser at 13 μm

Author

Rantamäki, Antti, primary, Sokolovskii, Grigorii S., additional, Blokhin, Sergey A., additional, Dudelev, Vladislav V., additional, Soboleva, Ksenia K., additional, Bobrov, Mikhail A., additional, Kuzmenkov, Alexander G., additional, Vasil’ev, Alexey P., additional, Gladyshev, Andrey G., additional, Maleev, Nikolai A., additional, Ustinov, Victor M., additional, and Okhotnikov, Oleg, additional

Published
2015
Full Text
View/download PDF

26. Impact of a large negative gain-to-cavity wavelength detuning on the performance of InGaAlAs oxide-confined vertical-cavity surface-emitting lasers

Author

Blokhin, Sergey A., additional, Bobrov, Mikhail A., additional, Maleev, Nikolai A., additional, Kuzmenkov, Alexander G., additional, Sakharov, Alexey V., additional, Blokhin, Alexey A., additional, Moser, Philip, additional, Lott, James A., additional, Bimberg, Dieter, additional, and Ustinov, Viktor M., additional

Published
2015
Full Text
View/download PDF

29. 1300-nm wafer-fused VCSELs with InGaAs/InAlGaAs superlattice-based active region.

Author

Blokhin, Sergey A., Ledentsov, Nikolay, Rochas, Stanislav S., Babichev, Andrey V., Gladyshev, Andrey G., Chorchos, Łukasz, Makarov, Oleg Yu., Karachinsky, Leonid Ya., Novikov, Innokenty I., Blokhin, Alexey A., Bobrov, Mikhail A., Maleev, Nikolay A., Andryushkin, Vladislav V., Voropaev, Kirill O., Zhumaeva, Irina O., Ustinov, Victor M., Egorov, Anton Yu., and Ledentsov, Nikolay N.

Published
2021
Full Text
View/download PDF

30. Synthesis and biological evaluation of novel amides of polyunsaturated fatty acids with dopamine

Author

Bezuglov, Vladimir, primary, Bobrov, Mikhail, additional, Gretskaya, Natalia, additional, Gonchar, Alla, additional, Zinchenko, Galina, additional, Melck, Dominique, additional, Bisogno, Tiziana, additional, Di Marzo, Vincenzo, additional, Kuklev, Dmitry, additional, Rossi, Jean-Claude, additional, Vidal, Jean-Pierre, additional, and Durand, Thierry, additional

Published
2001
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results