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1. Helicity- and Azimuthal-Dependent Topological Photocurrents in Bi2Se3 using THz Spectroscopy

2. Optical Field Induced Upconversion in Quantum Dots from Mid- and Long-Wavelength Infrared Radiation

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3. Dependence of minority carrier lifetime of Be-doped InAs/InAsSb type-II infrared superlattices on temperature and doping density

4. Investigation of Trap States in Mid-Wavelength Infrared Type II Superlattices Using Time-Resolved Photoluminescence

5. TIME-RESOLVED PHOTOLUMINESCENCE STUDY OF TYPE II SUPERLATTICE STRUCTURES WITH VARYING ABSORBER WIDTHS

6. Time-resolved photoluminescence study of carrier recombination and transport in type-II superlattice infrared detector materials

7. Study of Temperature-Dependent Carrier Transport in a p-GaN/i-InGaN/n-GaN Solar Cell Heterostructure using Ultrafast Spectroscopy

8. Temperature-dependent minority carrier lifetimes of InAs/InAs1-xSbxtype-II superlattices

9. Polarization Enhanced Carrier Transport in a p-down n-GaN/i-InGaN/p-GaN Solar Cell Structure

10. Study of recombination mechanisms limiting the performance of Sb-based III-V type II superlattices for infrared detectors

11. Carrier lifetime studies in midwave infrared type-II InAs/GaSb strained layer superlattice

12. Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb

13. Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence