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The potential of pulsed THz radiation for time-of-flight imaging applications is well recognized. However, advances in this field are currently severely limited by the low average power of ultrafast THz sources. Typically, this results in impractically long acquisition times and a loss in resolution and contrast. These limitations make imaging of the objects in real-life scenarios impossible. Here, conclusively, the potential of state-of-the-art high-average power THz time-domain spectrometer (TDS), driven by a 100-W class, one-box ultrafast oscillator for imaging applications is shown by demonstrating lensless THz imaging in reflection mode of a dielectric sample with low reflectivity. Images obtained with our home-built 20-mW average power THz-TDS system show a significant contrast enhancement compared to a state-ofthe-art commercial THz-TDS with less than 200 μW of average power. Our unique setup even allows us to obtain images of such an object with high-contrast hidden inside a medium-density fiberboard (MDF) box. This opens the door to THz time-of-flight imaging of concealed objects of unknown shape and orientation in various real-life scenarios which were so far impossible to realize.

We present an optoelectronic mixer for the terahertz (THz) frequency-domain based on an iron-doped InGaAs layer integrated in a plasmonic microcavity. We show that this structure, under 1550-nm-wavelength illumination, allows for more than 70% absorption efficiency in a 220 nm-thin InGaAs absorber and very high Roff/Ron >1000. It leads to THz mixers driven by 1550-nm lasers showing conversion loss as low as ∼30 dB at 300 GHz. Therefore, this design is very promising for application as receivers in high-data-rate wireless telecom, in cw-THz spectrometers, or in photonics-enabled THz spectrum analyzers.

Time-domain spectroscopy with terahertz frequencies typically requires complex and bulky systems. Here, the authors present an opto-electronics-based, frequency-domain terahertz sensing technique which offers competitive measurement performance in a much simpler system.

Quality control of car body paint in the automotive industry is a promising industrial application of terahertz technology. Terahertz time-domain spectroscopy in reflection geometry enables accurate, fast, and nondestructive measurement of individual layer thicknesses of multi-layer coatings. For high precision thickness measurements, the frequency dependent complex refractive index of all layers must be calibrated very accurately. THz time-domain ellipsometry is self-referencing and provides reliable, frequency resolved material properties with high signal-to-noise ratio. The method is characterized by a high sensitivity to optical material properties and layer thicknesses. We present characterization results in the frequency range 0.1–6 THz for typical automotive paints and different substrates such as polypropylene (PP), which features a high material anisotropy. We demonstrate that the broadband material properties derived from ellipsometry allow for inline thickness measurements of multi-layer car body paints with high accuracy.

Knowledge of the beam profiles of terahertz emitters is required for the design of terahertz instruments and applications, and in particular for designing terahertz communications links. We report measurements of beam profiles of an optoelectronic silicon lens-integrated PIN-PD emitter at frequencies between 100 GHz and 1 THz and observe significant deviations from a Gaussian beam profile. The beam profiles were found to differ between the H-plane and the E-plane, and to vary strongly with the emitted frequency. Skewed profiles and irregular side-lobes were observed. Metrological aspects of beam profile measurements are discussed and addressed.

We present a fiber coupled transceiver head for terahertz (THz) time-domain reflection measurements. The monolithically integrated transceiver chip is based on iron (Fe) doped In0.53Ga0.47As (InGaAs:Fe) grown by molecular beam epitaxy. Due to its ultrashort electron lifetime and high mobility, InGaAs:Fe is very well suited as both THz emitter and receiver. A record THz bandwidth of 6.5 THz and a peak dynamic range of up to 75 dB are achieved. In addition, we present THz imaging in reflection geometry with a spatial resolution as good as 130 µm. Hence, this THz transceiver is a promising device for industrial THz sensing applications.