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2. Structural and electrooptical characteristics of quantum dots emitting at 1.3 um on gallium arsenide

11. Measurement of the fundamental band gaps of a strained GaInAs layer.

12. Atmospheric pressure organometallic vapor-phase epitaxial growth and characterization of Ga0.4In0.6P/(Al0.4Ga0.6)0.5In0.5P strained quantum wells.

40. Interwell excitons in GaAs superlattices

41. High-resolution spectroscopy of matrix-isolated fullerene molecules

46. Interwell excitons in GaAs superlattices

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