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A distinguishing feature of MAX phases and their MXene derivatives is their remarkable chemical diversity. This diversity, coupled with the 2D nature of MXenes, positions them as outstanding candidates for a wide range of electrochemical applications. Chemical disorder introduced by a solid solution can improve electrochemical behavior. Up to now, adding considerable amount of tungsten (W) in MAX phase and MXenes solid solutions, which can enhance electrochemical performance, proved challenging. In this study, the synthesis of M site Ti1‐xWx solid solution MAX phases are reported. The 211‐type (Ti1‐xWx)2AlC exhibits a disordered solid solution, whereas the 312‐type (Ti1‐xWx)3AlC2 displays a near‐ordered structure, resembling o‐MAX, with W atoms preferentially occupying the outer planes. Solid‐solution MXenes, Ti2.4W0.6C2Tz, and Ti1.6W0.4CTz, are synthesized via selective etching of high‐purity MAX powder precursors containing 20% W. These MXenes are evaluated as sodium‐ion battery anodes, with Ti1.6W0.4CTz showing exceptional capacity, outperforming existing multilayer MXene chemistries. This work not only demonstrates the successful integration of W in meaningful quantities into a double transition metal solid solution MAX phase, but also paves the way for the development of cost‐effective MXenes containing W. Such advancements significantly widen their application spectrum by fine‐tuning their physical, electronic, mechanical, electrochemical, and catalytic properties. [ABSTRACT FROM AUTHOR]

Monoclinic ferroelectric phases are prevalent in various functional materials, most notably mixed‐ion perovskite oxides. These phases can manifest as regularly ordered long‐range crystallographic structures or as macroscopic averages of the self‐assembled tetragonal/rhombohedral nanodomains. The structural and physical properties of monoclinic ferroelectric phases play a pivotal role when exploring the interplay between ferroelectricity, ferroelasticity, giant piezoelectricity and multiferroicity in crystals, ceramics and epitaxial thin films. However, the complex nature of this subject presents challenges, particularly in deciphering the microstructures of monoclinic domains. In Paper I [Biran & Gorfman (2024). Acta Cryst. A80, 112–128] the geometrical principles governing the connection of domain microstructures formed by pairing MAB type monoclinic domains were elucidated. Specifically, a catalog was established of 'permissible domain walls', where 'permissible', as originally introduced by Fousek & Janovec [J. Appl. Phys. (1969), 40, 135–142], denotes a mismatch‐free connection between two monoclinic domains along the corresponding domain wall. The present article continues the prior work by elaborating on the formalisms of permissible domain walls to describe domain microstructures formed by pairing the MC type monoclinic domains. Similarly to Paper I, 84 permissible domain walls are presented for MC type domains. Each permissible domain wall is characterized by Miller indices, the transformation matrix between the crystallographic basis vectors of the domains and, crucially, the expected separation of Bragg peaks diffracted from the matched pair of domains. All these parameters are provided in an analytical form for easy and intuitive interpretation of the results. Additionally, 2D illustrations are provided for selected instances of permissible domain walls. The findings can prove valuable for various domain‐related calculations, investigations involving X‐ray diffraction for domain analysis and the description of domain‐related physical properties. [ABSTRACT FROM AUTHOR]

The concept of monoclinic ferroelectric phases has been extensively used over recent decades for the understanding of crystallographic structures of ferroelectric materials. Monoclinic phases have been actively invoked to describe the phase boundaries such as the so‐called morphotropic phase boundary in functional perovskite oxides. These phases are believed to play a major role in the enhancement of such functional properties as dielectricity and electromechanical coupling through rotation of spontaneous polarization and/or modification of the rich domain microstructures. Unfortunately, such microstructures remain poorly understood due to the complexity of the subject. The goal of this work is to formulate the geometrical laws behind the monoclinic domain microstructures. Specifically, the result of previous work [Gorfman et al. (2022). Acta Cryst. A78, 158–171] is implemented to catalog and outline some properties of permissible domain walls that connect 'strain' domains with monoclinic (MA/MB type) symmetry, occurring in ferroelectric perovskite oxides. The term 'permissible' [Fousek & Janovec (1969). J. Appl. Phys.40, 135–142] pertains to the domain walls connecting a pair of 'strain' domains without a lattice mismatch. It was found that 12 monoclinic domains may form pairs connected along 84 types of permissible domain walls. These contain 48 domain walls with fixed Miller indices (known as W‐walls) and 36 domain walls whose Miller indices may change when free lattice parameters change as well (known as S‐walls). Simple and intuitive analytical expressions are provided that describe the orientation of these domain walls, the matrices of transformation between crystallographic basis vectors and, most importantly, the separation between Bragg peaks, diffracted from each of the 84 pairs of domains, connected along a permissible domain wall. It is shown that the orientation of a domain wall may be described by the specific combination of the monoclinic distortion parameters r = [2/(γ − α)][(c/a) − 1], f = (π − 2γ)/(π − 2α) and p = [2/(π − α − γ)] [(c/a) − 1]. The results of this work will enhance understanding and facilitate investigation (e.g. using single‐crystal X‐ray diffraction) of complex monoclinic domain microstructures in both crystals and thin films. [ABSTRACT FROM AUTHOR]

The concept of monoclinic ferroelectric phases has been extensively used over recent decades for the understanding of crystallographic structures of ferroelectric materials. Monoclinic phases have been actively invoked to describe the phase boundaries such as the so-called morphotropic phase boundary in functional perovskite oxides. These phases are believed to play a major role in the enhancement of such functional properties as dielectricity and electromechanical coupling through rotation of spontaneous polarization and/or modification of the rich domain microstructures. Unfortunately, such microstructures remain poorly understood due to the complexity of the subject. The goal of this work is to formulate the geometrical laws behind the monoclinic domain microstructures. Specifically, the result of previous work [Gorfman et al. (2022). Acta Cryst. A78, 158-171] is implemented to catalog and outline some properties of permissible domain walls that connect `strain' domains with monoclinic (M A /M B type) symmetry, occurring in ferroelectric perovskite oxides. The term `permissible' [Fousek & Janovec (1969). J. Appl. Phys. 40, 135-142] pertains to the domain walls connecting a pair of `strain' domains without a lattice mismatch. It was found that 12 monoclinic domains may form pairs connected along 84 types of permissible domain walls. These contain 48 domain walls with fixed Miller indices (known as W-walls) and 36 domain walls whose Miller indices may change when free lattice parameters change as well (known as S-walls). Simple and intuitive analytical expressions are provided that describe the orientation of these domain walls, the matrices of transformation between crystallographic basis vectors and, most importantly, the separation between Bragg peaks, diffracted from each of the 84 pairs of domains, connected along a permissible domain wall. It is shown that the orientation of a domain wall may be described by the specific combination of the monoclinic distortion parameters r = [2/(γ - α)][(c/a) - 1], f = (π - 2γ)/(π - 2α) and p = [2/(π - α - γ)] [(c/a) - 1]. The results of this work will enhance understanding and facilitate investigation (e.g. using single-crystal X-ray diffraction) of complex monoclinic domain microstructures in both crystals and thin films., (open access.)