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Abstract Surface reconstruction plays an essential role in electrochemical catalysis. The structures, compositions, and functionalities of the real catalytic species and sites generated by reconstruction, however, are yet to be clearly understood, for the metastable or transit state of most reconstructed structures. Herein, a series of NiFe oxalates (NixFe1‐xC2O4, x = 1, 0.9, 0.7, 0.6, 0.5, and 0) are synthesized for overall water splitting electrocatalysis. Whilst NixFe1‐xC2O4 shows great hydrogen evolution reaction (HER) activity, the in situ reconstructed NixFe1‐xOOH exhibits outstanding oxygen evolution reaction (OER) activity. As identified by the in situ Raman spectroscopy and quasi‐in situ X‐ray absorption spectroscopy (XAS) techniques, reconstructions from NixFe1‐xC2O4 into defective NixFe1‐xOOH and finally amorphous NixFe1‐xOOH active species (R‐NixFe1‐xOOH) are confirmed upon cyclic voltammetry processes. Specifically, the fully reconstructed R‐Ni0.6Fe0.4OOH demonstrates the best OER activity (179 mV to reach 10 mA cm−2), originating from its abundant real active sites and optimal d‐band center. Benefiting from the reconstruction, an alkaline electrolyzer composed of a Ni0.6Fe0.4C2O4 cathode and an in situ reconstructed R‐Ni0.6Fe0.4OOH anode achieves a superb overall water splitting performance (1.52 V@10 mA cm−2). This work provides an in‐depth structure‐property relationship understanding on the reconstruction of catalysts and offers a new pathway to designing novel catalyst.

Abstract The development of high‐performance artificial synaptic neuromorphic devices poses a significant challenge in the creation of biomimetic sensing neural systems that seamlessly integrate both sensory and computational functionalities. In pursuit of this objective, promising bionic opto‐olfactory co‐sensory artificial synapse devices are constructed utilizing the BP‐C/CNT (2D/1D) hybrid filter membrane as the resistive layer. Experimental results demonstrated that the devices seamlessly integrated the light modulation, gas detection, and biological synaptic functions into a single device while addressing the challenge with separating artificial synaptic devices from sensors. These devices offered the following advantages: 1) Simulating visual synapses, they can effectively replicate fundamental synaptic functions under both electrical and optical stimulation. 2) By emulating olfactory synapse responses to specific gases, they can achieve ultra‐low detection limits and rapid identification of ethanol and acetone gases. 3) They enable photo‐olfactory co‐sensing simulations that mimic synaptic function under light‐modulated pulse conditions in distinct gas environments, facilitating the study of synaptic learning rules and Pavlovian responses. This work provides a pioneering approach for exploring highly stable 2D BP‐based optoelectronics and advancing the development of biomimetic neural systems.

3D micro-nano devices are expected to become the mainstay of multi-color solid-state lighting in the future because of their broad-band characteristic and the advantage of integrating the monolithic light-emitting diode on a single chip. In this work, InGaN/GaN micro-truncated pyramid arrays with six equivalent (101̄1) semi-polar facets and one (0001) polar facet were successfully prepared by the metal-organic chemical vapor deposition technology. The average diameter of the obtained uniform micro-truncated pyramids was 6.8 µm with a height of 2.4 µm. According to the results of micro-photoluminescence performed, the InGaN/GaN micro-truncated pyramid arrays can achieve multi-color emission from blue to red. The luminescent positions corresponding to different wavelengths were detected by the cathode luminescence spectrum. The multi-color emission was related to the quantum hybrid structures apart from the discrepancy of In composition in different positions. The developed microstructure can create multi-color emission by combining distinct luminescence modes, which can aid in the design of future optoelectronic devices.

The pursuit of optimal bandgap and band edge positions is crucial for effective photocatalytic catalysts, leading to significant attentions in both experimental and theoretical research on modulating the band structure of semiconductor photocatalysts. In this study, the electronic, optical and photocatalytic properties of 2D monolayer GaN and GaN/InGaN heterostructures are investigated using DFT calculations. It reveals that introducing strain is an effective approach to not only alter the band gap type from indirect to direct but also influence the magnitude of the band gap. At a 10% tensile strain, a Z-type heterostructure is formed for the 2D GaN/InGaN heterostructures, which proves favorable for enhancing the efficiency of photocatalytic water splitting. However, it is worth noting that the band gap type remains indirect, necessitating additional energy for electron transitions. On the other hand, when increasing the compressive strain from − 2.5% to − 5%, the 2D GaN/InGaN heterostructure transforms from type I to type II, exhibiting direct band gaps with an enhanced light absorption range. This results in a significant redshift and increased optical absorption intensity within the visible light range, leading to a substantial enhancement in photocatalytic efficiency. Consequently, our findings demonstrate that the 2D GaN/InGaN heterostructure holds promising potential as a candidate material for efficient photocatalytic water splitting applications.

High-aspect-ratio microholes, the fundamental building blocks for microfluidics, optical waveguides, and other devices, find wide applications in aerospace, biomedical, and photonics fields. Yttrium aluminum garnet (YAG) crystals are commonly used in optical devices due to their low stress, hardness, and excellent chemical stability. Therefore, finding efficient fabrication methods to produce high-quality microholes within YAG crystals is crucial. The Bessel beam, characterized by a uniform energy distribution along its axis and an ultra-long depth of focus, is highly suitable for creating high-aspect-ratio structures. In this study, an axicon lens was used to shape the spatial profile of a femtosecond laser into a Bessel beam. Experimental verification showed a significant improvement in the high aspect ratio of the microholes produced in YAG crystals using the femtosecond Bessel beam. This study investigated the effects of the power and defocus parameters of single-pulse Bessel beams on microhole morphology and size, and microhole units with a maximum aspect ratio of more than 384:1 were obtained. Based on these findings, single-pulse femtosecond Bessel processing parameters were optimized, and an array of 181 × 181 microholes in a 400 μm thick YAG crystal was created in approximately 13.5 min. The microhole array had a periodicity of 5 μm and a unit aspect ratio of 315:1, with near-circular top and subface apertures and high repeatability.

The injection and leakage of charge carriers have a significant impact on the optoelectronic performance of GaN-based lasers. In order to improve the limitation of the laser on charge carriers, a slope-shape hole-barrier layer (HBL) and electron-barrier layer (EBL) structure are proposed for near-UV (NUV) GaN-based lasers. We used Crosslight LASTIP for the simulation and theoretical analysis of the energy bands of HBL and EBL. Our simulations suggest that the energy bands of slope-shape HBL and EBL structures are modulated, which could effectively suppress carrier leakage, improve carrier injection efficiency, increase stimulated radiation recombination rate in quantum wells, reduce the threshold current, improve optical field distribution, and, ultimately, improve laser output power. Therefore, using slope-shape HBL and EBL structures can achieve the superior electrical and optical performance of lasers.

Abstract Single‐atomic transition metal–nitrogen–carbon (M–N–C) structures are promising alternatives toward noble‐metal‐based catalysts for oxygen reduction reaction (ORR) catalysis involved in sustainable energy devices. The symmetrical electronic density distribution of the M─N4 moieties, however, leads to unfavorable intermediate adsorption and sluggish kinetics. Herein, a Fe–N–C catalyst with electronic asymmetry induced by one nearest carbon vacancy adjacent to Fe─N4 is conceptually produced, which induces an optimized d‐band center, lowered free energy barrier, and thus superior ORR activity with a half‐wave potential (E1/2) of 0.934 V in a challenging acidic solution and 0.901 V in an alkaline solution. When assembled as the cathode of a Zinc–air battery (ZAB), a peak power density of 218 mW cm−2 and long‐term durability up to 200 h are recorded, 1.5 times higher than the noble metal‐based Pt/C+RuO2 catalyst. This work provides a new strategy on developing efficient M–N–C catalysts and offers an opportunity for the real‐world application of fuel cells and metal–air batteries.

A n-GaAsSb single waveguide layer semiconductor laser with an InP/In0.55Ga0.45As/AlGaAs asymmetrical barrier is designed in order to improve output power, which not only reduces optical loss in the p-region but also effectively suppresses carrier leakage. The results show that a GaAsSb single waveguide structure almost completely shifts the optical field to the n-region, which reduces the absorption of photons by holes. When the injected current is 1 A, the device’s optical loss decreases from 15.60 to 13.20 cm−1. Ensuring that carrier leakage and internal quantum efficiency are almost unaffected, the InP/In0.55Ga0.45As/AlGaAs asymmetric barrier makes optical loss further reduce. The power of the new-structure device is 0.74 W, and its wall-plug efficiency reaches 70.84%. This structure design will provide both experimental data and theoretical support for the growth of the epitaxial structure of InP-based 1550 nm semiconductor lasers.

Abstract White‐light‐emitting carbon dots (WCDs) show innate advantages as phosphors in white light‐emitting diodes (WLEDs). For WLEDs, the color rendering index (CRI) is the most important metric to evaluate its performance. Herein, WCDs are prepared by a facile one‐step solvothermal reaction of trimellitic acid and o‐phenylenediamine. It consists of four CDs identified by column chromatography as blue, green, yellow, red, and thus white light is a superposition of these four types of light. The mixture of the four CDs undergoes Förster resonance energy transfer to induce the generation of white light. The photoluminescence of WCDs originates from the synergistic effect of carbon core and surface states. Thereinto, the carbon core states dominate in RCDs, and the increase of amide contents and degree of conjugation promote the redshift of the emission spectra, which is further confirmed by theoretical calculations. In addition, a high CRI of 97 is achieved when the WCDs are used as phosphors to fabricate WLEDs, which is almost the highest value up to now. The multicolor LEDs can also be fabricated by using the four multicolor CDs as phosphors, respectively. This work provides a novel approach to explore the rapid preparation of low‐cost, high‐performance WCDs and CDs‐based WLEDs.

Owing to the COVID-19 outbreak, sterilization of deep-ultraviolet light-emitting diodes (DUV LEDs) has attracted increasing attention. Effectively improving the radiative recombination efficiency and mitigating the efficiency degradation, mainly caused by electron leakage and nonradiative recombination, have also emerged as two of the main issues to be addressed. In this study, a DUV LED epitaxial structure with a novel electron-blocking layer (EBL) is proposed. The DUV LED with a luminescence wavelength of ∼297 nm was formed by the stepwise variation of the Al component. Through the simulation and analysis of its performance parameters, we found that, compared to the conventional EBL structure, this new EBL structure not only reduces the electron leakage to the p-region effectively but also increases the hole injection into the active region, resulting in an increase in carrier concentration in the active region, a two-to-three-fold increase in the radiative recombination rate, and a 58% increase in the internal quantum efficiency, thus alleviating the efficiency droop and achieving a more efficient operation at high current densities.

Abstract Exploring low‐cost and high‐efficient electrocatalyst is an exigent task in developing novel sustainable energy conversion systems, such as fuel cells and electrocatalytic fuel generations. 2D materials, specifically 2D superlattice materials focused here, featured highly accessible active areas, high density of active sites, and high compatibility with property‐complementary materials to form heterostructures with desired synergetic effects, have demonstrated to be promising electrocatalysts for boosting the performance of sustainable energy conversion and storage devices. Nevertheless, the reaction kinetics, and in particular, the functional mechanisms of the 2D superlattice‐based catalysts yet remain ambiguous. In this review, based on the recent progress of 2D superlattice materials in electrocatalysis applications, the rational design and fabrication of 2D superlattices are first summarized and the application of 2D superlattices in electrocatalysis is then specifically discussed. Finally, perspectives on the current challenges and the strategies for the future design of 2D superlattice materials are outlined. This review attempts to establish an intrinsic correlation between the 2D superlattice heterostructures and the catalytic properties, so as to provide some insights into developing high‐performance electrocatalysts for next‐generation sustainable energy conversion and storage.

Fluorescent fibers were constructed from self-made bonded terbium polymer by electrospinning. The microstructure of the fibers was tuned and the luminescent properties were investigated by adjusting the properties of polymer solution such as solvent system and conductivity. The surface of the fibers is smooth, the diameter is the smallest, and the luminescent property is the best when V(DCE)∶V(DMF)=1∶2. When tetrabutyl ammonium chloride is added, the conductivity of the solution increases, the fiber diameter further reduces, but the luminescent performance deteriorates instead, because tetrabutyl ammonium chloride is weakly acidic. Fluorescence anti-counterfeiting paper was prepared by mixing pulp and fibers with V(DCE)∶V(DMF)=1∶2 solvent system. Fluorescent anti-counterfeiting fibers with both concealment and anti-counterfeiting properties were obtained. They can be applied to banknotes, bills, securities, and other important fields.

Summary: Delayed fluorescent (DF) materials have high internal quantum efficiency because of the triplet excitons involved in the radiation transition, and the spin-forbidden transition can effectively improve their luminescent lifetime. Compared with traditional afterglow materials including metal-containing inorganic coordination compounds and organic compounds, the DF materials based on carbon dots (CDs) have drawn extensive attention because of their advantages of low toxicity, environmental friendliness, stable luminescence, easy preparation and low cost. Most CDs-based DF materials can be realized by embedding CDs in matrix with covalent bonds, hydrogen bonds or/and other supramolecular interactions. Recently, matrix-free self-protective CDs-based DF materials are emerging. This review systematically summarizes the DF mechanism and structural regulation strategies of CDs-based DF materials, and the applications of CDs-based DF materials in anti-counterfeiting, information encryption, temperature sensing and other fields are introduced. Finally, the existing problems and future potentials of CDs-based DF materials are proposed and prospected.

AZ61 Mg alloy with homogeneous refined microstructure and exceptional mechanical properties was obtained by the combined technology of equal-channel angular pressing (ECAP) and electropulsing treatment (EPT) in this paper. Based on an ECAP die with an intersection angle of 160, the lower temperature is particularly adapted for AZ61 alloy to be deformed, in which accompanied by high accumulated defects density. The recrystallization of EPTed samples during different stages indicated that the recrystallization behavior of the deformed Mg alloy was mainly affected by the processing time and duration of EPT. Compared to those of the as-received samples, the average grain size of the EPTed samples was refined from 89 µm to 1.0 µm, accordingly the yields stress (YS) and ultimate tensile strength (UTS) were increased from 100 MPa and 260 MPa to 330 MPa and 448 MPa, respectively. The mechanisms of microstructure transformation and the reinforced mechanical properties were analyzed based on the strain of single ECAP, cumulative storage energy and the athermal effect of EPT.

We report on the development of a 940-nm diode laser bar based on epitaxially stacked active regions by employing a tunnel junction structure. The tunnel junction and the device parameters were systematically optimized to achieve high output and power conversion efficiency. A record quasi-continuous wave (QCW) peak power of 1.91 kW at 25 °C was demonstrated from a 1-cm wide bar with a 2-mm cavity length at 1 kA drive current (200 μs pulse width and 10 Hz repetition rate). Below the onset of the thermal rollover, the slope efficiency was as high as 2.23 W/A. The maximum power conversion efficiency of 61.1% at 25 °C was measured at 300 A. Reducing the heatsink temperature to 15 °C led to a marginal increase in the peak power to 1.95 kW.

High transmembrane delivery efficiency of nanoparticles has attracted substantial interest for biomedical applications. It has been proved that the desired physicochemical properties of nanoparticles were efficient for obtaining a high cellular uptake capacity. On the other hand, biophysical stimuli from in situ microenvironment were also indicated as another essential factor in the regulation of cellular uptake capacity. Unfortunately, the influence of colony morphology on cellular uptake capacity was rarely analyzed. In this study, micropatterned PDMS stencils containing circular holes of 800/1,200 μm in diameter were applied to control colonies’ size. The amino-modified nanoparticles were cocultured with micropatterned colonies to analyze the influence of colonies’ morphology on the cellular uptake capacity of nanoparticles. Consequently, more endocytosed nanoparticles in larger colonies were related with a bigger dose of nanoparticles within a larger area. Additionally, the high cell density decreased the membrane–nanoparticles’ contacting probability but enhanced clathrin-mediated endocytosis. With these contrary effects, the cells with medium cell density or located in the peripheral region of the micropatterned colonies showed a higher cellular uptake capacity of nanoparticles.

Semi-polar 101̄1 green InGaN light-emitting diodes with different quantum barrier materials were numerically investigated by considering the In composition fluctuation model. For the green light-emitting diode using quaternary Al0.05In0.1Ga0.85N quantum barriers with low Al content, the electric field was reduced, the carrier distribution was appropriately modified, and the efficiency droop was significantly alleviated. In particular, the band pulldown was relieved, and the Fermi levels were flatter, which elevated the electron confinement and decreased the hole injection potential barrier, further promoting hole transport. Moreover, the carrier distribution was more homogeneous and no longer concentrated in the last quantum well, resulting in a reduced nonradiative recombination rate and minimal turn-on voltage. Finally, the internal quantum efficiency was further enhanced by increasing the radiative recombination and thus the efficiency decreased by only 9.1% at a current density of 1000 A/cm2. The proposed structure using quaternary Al0.05In0.1Ga0.85N with low Al molar fraction as a quantum barrier showed great potential for overcoming the “green gap” problem and application in high-power scenarios.

Abstract Lithium-ion batteries (LIBs) are considered new generation of large-scale energy-storage devices. However, LIBs suffer from a lack of desirable anode materials with excellent specific capacity and cycling stability. In this work, we design a novel hierarchical structure constructed by encapsulating cobalt sulfide nanowires within nitrogen-doped porous branched carbon nanotubes (NBNTs) for LIBs. The unique hierarchical Co9S8@NBNT electrode displayed a reversible specific capacity of 1310 mAh g−1 at a current density of 0.1 A g−1, and was able to maintain a stable reversible discharge capacity of 1109 mAh g−1 at a current density of 0.5 A g−1 with coulombic efficiency reaching almost 100% for 200 cycles. The excellent rate and cycling capabilities can be ascribed to the hierarchical porosity of the one-dimensional Co9S8@NBNT internetworks, the incorporation of nitrogen doping, and the carbon nanotube confinement of the active cobalt sulfide nanowires offering a proximate electron pathway for the isolated nanoparticles and shielding of the cobalt sulfide nanowires from pulverization over long cycling periods.

Ruthenium (Ru) single atoms were decorated on the surface of the graphitic carbon nitride (g-C3N4) successfully in this work. By varieties of characterization, the existence of Ru single atoms and the defects (cyano groups) caused in the process of synthesis have been confirmed. The catalyst decorated by Ru atoms (Ru-CCN-0.05) had better absorption capacity and a wider absorption range of light than the catalyst with no Ru atoms loading on (Ru-CCN-0). Without the help of hole-scavengers, the rate of photocatalytic nitrogen fixation of Ru-CCN-0.05 in ultra-pure water was 2.26 mg L−1 gcat −1 h−1, 1.5 times that of bare g-C3N4.

Abstract The growth mechanism of GaN epitaxial layers on mechanically exfoliated graphite is explained in detail based on classic nucleation theory. The number of defects on the graphite surface can be increased via O-plasma treatment, leading to increased nucleation density on the graphite surface. The addition of elemental Al can effectively improve the nucleation rate, which can promote the formation of dense nucleation layers and the lateral growth of GaN epitaxial layers. The surface morphologies of the nucleation layers, annealed layers and epitaxial layers were characterized by field-emission scanning electron microscopy, where the evolution of the surface morphology coincided with a 3D-to-2D growth mechanism. High-resolution transmission electron microscopy was used to characterize the microstructure of GaN. Fast Fourier transform diffraction patterns showed that cubic phase (zinc-blend structure) GaN grains were obtained using conventional GaN nucleation layers, while the hexagonal phase (wurtzite structure) GaN films were formed using AlGaN nucleation layers. Our work opens new avenues for using highly oriented pyrolytic graphite as a substrate to fabricate transferable optoelectronic devices.

Abstract Transition metal sulfides are regarded as a type of high-performance anode materials for lithium ion batteries (LIBs). However, their electrochemical process and lithium-storage mechanism are complicated and remain controversial. This work is intended to give the direct observation on the electrochemical behavior and find out the lithium-storage mechanism of molybdenum disulfide (MoS2) using in situ transmission electron microscopy (TEM). We find that single-crystalline MoS2 nanosheets convert to Mo nanograins (~2 nm) embedded in Li2S matrix after the first full lithiation. After the delithiation, the Mo nanograins and Li2S transform to a large number of lamellar MoS2 nanocrystals. The discharge-charge cycling of MoS2 in LIBs is found to be a fully reversible conversion between MoS2 and Mo/Li2S rather than the electrochemical conversion between S and Li2S proposed by many researchers. The in situ real-time characterization results give direct evidence and profound insights into the lithium-storage mechanism of MoS2 as anode in LIBs.

Abstract Surface morphology evolution mechanisms of InGaN/GaN multiple quantum wells (MQWs) during GaN barrier growth with different hydrogen (H2) percentages have been systematically studied. Ga surface-diffusion rate, stress relaxation, and H2 etching effect are found to be the main affecting factors of the surface evolution. As the percentage of H2 increases from 0 to 6.25%, Ga surface-diffusion rate and the etch effect are gradually enhanced, which is beneficial to obtaining a smooth surface with low pits density. As the H2 proportion further increases, stress relaxation and H2 over- etching effect begin to be the dominant factors, which degrade surface quality. Furthermore, the effects of surface evolution on the interface and optical properties of InGaN/GaN MQWs are also profoundly discussed. The comprehensive study on the surface evolution mechanisms herein provides both technical and theoretical support for the fabrication of high-quality InGaN/GaN heterostructures.

Abstract InGaN/GaN multiple quantum wells (MQWs) were grown with hydrogen treatment at well/barrier upper interface under different temperatures. Hydrogen treatment temperature greatly affects the characteristics of MQWs. Hydrogen treatment conducted at 850 °C improves surface and interface qualities of MQWs, as well as significantly enhances room temperature photoluminescence (PL) intensity. In contrast, the sample with hydrogen treatment at 730 °C shows no improvement, as compared with the reference sample without hydrogen treatment. On the basis of temperature-dependent PL characteristics analysis, it is concluded that hydrogen treatment at 850 °C is more effective in reducing defect-related non-radiative recombination centers in MQWs region, yet has little impact on carrier localization. Hence, hydrogen treatment temperature is crucial to improving the quality of InGaN/GaN MQWs.

To greatly improve the production quality and efficiency of carbon quantum dots (CQDs), and provide a new approach for the large-scale production of high-quality CQDs, green carbon quantum dots (g-CQDs) with high product yield (PY) and high fluorescent quantum yield (QY) were synthesized by an efficient one-step solvothermal method with 2,7-dihydroxynaphthalene as the carbon source and ethylenediamine as the nitrogen dopant in this study. The PY and QY of g-CQDs were optimised by adjusting reaction parameters such as an amount of added ethylenediamine, reaction temperature, and reaction duration. The results showed that the maximum PY and QY values of g-CQDs were achieved, which were 70.90% and 62.98%, respectively when the amount of added ethylenediamine, reaction temperature, and reaction duration were 4 mL, 180 °C, and 12 h, respectively. With the optimised QY value of g-CQDs, white light emitting diodes (white LEDs) were prepared by combining g-CQDs and blue chip. The colour rendering index of white LEDs reached 87, and the correlated colour temperature was 2520 K, which belongs to the warm white light area and is suitable for indoor lighting. These results indicate that g-CQDs have potential and wide application prospects in the field of white LEDs.

In this study, GaN epitaxial layers were successfully deposited on a multilayer graphene (MLG) by using metal-organic chemical vapor deposition (MOCVD). Highly crystalline orientations of the GaN films were confirmed through electron backscatter diffraction (EBSD). An epitaxial relationship between GaN films and MLG is unambiguously established by transmission electron microscope (TEM) analysis. The Raman spectra was used to analyze the internal stress of GaN films, and the spectrum shows residual tensile stress in the GaN films. Moreover, the results of the TEM analysis and Raman spectra indicate that the high quality of the MLG substrate is maintained even after the growth of the GaN film. This high-quality MLG makes it possible to easily remove epitaxial layers from the supporting substrate by micro-mechanical exfoliation technology. This work can aid in the development of transferable devices using GaN films.