194 results on '"Biersack, J. P."'
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2. Background in (n, p) and (n, α) Spectrometry
3. The Stopping and Range of Ions in Solids
4. The Calculation of Ion Ranges in Solids with Analytic Solutions
5. Implantation of Boron and Lithium in Semiconductors and Metals
6. Study of Li-6 Implanted into Niobium
7. Channeling, Blocking, and Range Measurements using Thermal Neutron Induced Reactions
8. Distributions of light ions and foil destruction after irradiation of organic polymers.
9. Thermal behavior and range distribution of 209Bi implanted into the Al/V bilayer structure.
10. Ion beam impact and penetration of polymethyl methacrylate.
11. Depth profile and thermal annealing behavior of Bi implanted into an Al/Ti bilayer structure.
12. Computer simulation of the backscattering and implantation of hydrogen and helium.
13. The reflection of light swift particles from heavy solid targets
14. Reflection of heavy ions
15. New projected range algorithm as derived from transport equations
16. Sputtering studies with the Monte Carlo Program TRIM.SP
17. Variational calculation of the angular width of the multiple scattering distribution in foil transmission
18. Reflection of low-energy hydrogen from solids
19. Computer simulation of two-component target sputtering
20. Determination of low dose concentration profiles in solids by means of (n, p) and (n, α) reactions
21. Self-sputtering and reflection
22. Mass and energy dependence of implanted ion profiles in the AZ111 photoresist.
23. SRIM - The Stopping and Range of Ions in Matter (2010)
24. Diffusion in highly immiscible systems
25. Channeling Implants of B-ions Into Less-than 100 Greater-than Silicon Surfaces
26. Energy deposition distributions caused by fast neutrons in converter type silicon detectors
27. Calculation of the first four moments of electronic energy loss of protons in aluminium
28. Distortion of sims profiles due to ion beam mixing: Shallow arsenic implants in silicon
29. Nickel metallization of Si by dynamic ion-beam mixing
30. Ejection of primary and secondary electrons (cascades) from the ion track centre
31. Ion beam modification of PMMA – changes of the optical properties
32. A compact position-sensitive time-of-flight detector for high-energy elastic recoil detection analysis
33. Study of ion mixing during Auger depth profiling of Ge–Si multilayer system. II. Low ion energy (0.2–2 keV) range
34. Reflection approach for the analytical description of light ion implantation into bilayer structures
35. Preface
36. Basic physical aspects in simulating atomic collisions
37. Numerical and experimental studies of the sputter yield amplification effect
38. Study of ion mixing during Auger electron spectroscopy depth profiling of Ge–Si multilayer system
39. What can we learn about high energy ion scattering from computer simulations
40. Monte Carlo and other simulation codes for ion-induced radiation effects
41. Analytic expressions for ion reflection from amorphous targets
42. Angle of incidence variation of sputtering of germanium
43. Influence of nuclear track potentials in insulators on the emission of target Auger electrons
44. Auger-electron emission from slow, highly charged ions interacting with solid Cu targets
45. Channeling implants of B ions into silicon surfaces
46. Ion beam induced changes of the refractive index of PMMA
47. 30 keV to 2 MeV Boron implantation profiles in solids
48. Lattice-site determination by magnetic hyperfine interaction for implantedFe54ions in α- and γ-cerium
49. Investigation of δ-electron emission in collisions of highly charged fast Ne projectiles with carbon-foil targets
50. Range and thermal-behavior studies of Au and Bi implanted into photoresist films
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