157 results on '"Biefeld, R.M."'
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2. The effect of antimony in the growth of indium arsenide quantum dots in gallium arsenide (001)
3. The Effect of Hydrogen Carrier Gas on the Morphological Evolution and Material Properties of GaN on Sapphire
4. Indium–arsenic–antimony Materials and Devices
5. Strained-layer Heteroepitaxy
6. The impact of growth parameters on the formation of InAs quantum dots on GaAs(1 0 0) by MOCVD
7. The preparation of InGa(As)Sb and Al(Ga)AsSb films and diodes on GaSb for thermophotovoltaic applications using metal-organic chemical vapor deposition
8. The growth and characterization of GaInAsSb and AlGaAsSb on GaSb by metal-organic chemical vapor deposition
9. Growth of InSb on GaAs using InAlSb buffer layers
10. InAsSb/InPSb strained-layer superlattice growth using metal-organic chemical vapor deposition
11. Midwave Infrared (2-6{micro}m) Emitter-Based Chemical Sensor Systems
12. Progress in the growth of mid-infrared InAsSb emitters by metal-organic chemical vapor deposition
13. OMVPE growth and gas-phase reactions of AlGaN for UV emitters
14. Development of InAsSb-based light emitting diodes for chemical sensing systems
15. Recent advances in mid-infrared (3--6 micron) emitters
16. Implantation activation annealing of Si-implanted gallium nitride at temperatures > 1,100 C
17. Use of high index substrates to enable dislocation filtering in large mismatch systems
18. Photoluminescence studies on Al and Ga interdiffusion across (Al,Ga)Sb/GaSb quantum well interfaces
19. Novel materials and device design by metal-organic chemical vapor deposition for use in infrared emitters
20. The growth and doping of Al(As)Sb by metal-organic chemical vapor deposition
21. Interfaces in InAsSb/InGaAs strained-layer superlattices grown by MOCVD for use in infrared emitters
22. Indium–arsenic–antimony Materials and Devices
23. Strained-layer Heteroepitaxy
24. Chapter 8 Principles and Applications of Semiconductor Strained-Layer Superlattices
25. The impact of growth parameters on the formation of InAs quantum dots on GaAs(100) by MOCVD
26. The surfactant effects of antimony on the formation of InAsSb nanostructures on GaAs by metal-organic chemical vapor deposition
27. High temperature electrical conductivity and thermal decomposition of phenolic- and silicon-based dielectrics for fireset housings
28. Recent advances in mid-infrared (3–6 μm) emitters
29. 10-stage,‘cascaded’ InAsSb quantum well laser at 3.9 [micro sign]m
30. Novel materials and device design by metal-organic chemical vapour deposition for use in IR emitters
31. The metal-organic chemical vapor deposition growth and properties of InAsSb mid-infrared (3-6-μm) lasers and LEDs
32. The growth of mid-infrared lasers and AlAsxSb1 − x by MOCVD
33. Advances in InAsSb-based mid-infrared lasers and LEDs, grown by MOCVD
34. Multi-staged, InAsSb mid-infrared lasers and light-emitting diodes, grown by MOCVD
35. The growth of mid-infrared emitting InAsSb/InAsP strained-layer superlattices using metal-organic chemical vapor deposition
36. High purity GaAs and AlGaAs grown using tertiarybutylarsine, trimethylaluminum, and trimethylgallium
37. The growth of InAs1-xSbx/InAs strained-layer superlattices by metalorganic chemical vapot deposition
38. Substrate orientation and surface morphology improvements for InSb grown by metalorganic chemical vapor deposition
39. The growth of InP1-xSbx by metalorganic chemical vapor deposition
40. The growth of InSb using alternative organometallic Sb sources
41. The growth of InSb using triisopropylantimony or tertiarybutyldimethylantimony and trimethylindium
42. Reproducible growth of InAsxSb1−x/InSb strained-layer superlattice photodiodes by low pressure MOCVD
43. Trimethylamine alane for MOVPE of AlGaAs and vertical-cavity surface-emitting laser structures
44. Ion-implanted strained-layer superlattice device.
45. Ion implanted lateral In.2Ga.8As/GaAs strained-layer superlattice photodetector.
46. Multi-staged, InAsSb mid-infrared lasers and light-emitting diodes, grown by MOCVD.
47. The growth of mid-infrared emitting InAsSb/InAsP strained-layer superlattices using metal-organic chemical vapor deposition.
48. Multistage infrared emitters based on InAsSb strained layers grown by metal-organic chemical vapor deposition.
49. Prototype InAsSb strained-layer superlattice photovoltaic and photoconductive infrared detectors.
50. Growth of InSb on GaAs by metalorganic chemical vapor deposition
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