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25 results on '"Bian, Zan"'

24. Carbon-nanotube-reinforced Zr[sub 52.5]Cu[sub 17.9]Ni[sub 14.6]Al[sub 10]Ti[sub 5] bulk metallic glass composites.

Author

Bian, Zan, Pan, Ming Xiang, Zhang, Yun, and Wang, Wei Hua

Subjects
*NANOTUBES, *METALS, *DIE castings
Abstract

Carbon-nanotube (CNT) reinforced Zr-based bulk metallic glass composites are prepared by the conventional die cast method. A large amount of CNTs still keep their seamless cylindrical morphology in the glassy matrix, even though some CNTs react with Zr, resulting in the formation of ZrC phase. Investigation shows that the elastic moduli, Vicker's hardness, density, and Debye temperature of the composite are markedly changed by introducing CNTs into the glass. Our results suggest that CNTs are promising materials for preparing reinforced, lightweight bulk metallic glass composites with improved mechanical and physical properties relative to the undoped glass. [ABSTRACT FROM AUTHOR]

Published
2002
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25. Covalently interconnected transition metal dichalcogenide networks via defect engineering for high-performance electronic devices

Author

Zan Bian, Ahin Roy, Daniel Iglesias, Marc-Antoine Stoeckel, Adam G. Kelly, Andrea C. Ferrari, Paolo Samorì, Yarjan Abdul Samad, Jonathan N. Coleman, Rafael Furlan de Oliveira, Clive Downing, Lucia Lombardi, Stefano Ippolito, Valeria Nicolosi, Institut de Science et d'ingénierie supramoléculaires (ISIS), Réseau nanophotonique et optique, Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Matériaux et nanosciences d'Alsace (FMNGE), Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA), Université Louis Pasteur - Strasbourg I-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), Ippolito, Stefano [0000-0002-6906-3961], Stoeckel, Marc-Antoine [0000-0002-6410-4058], Roy, Ahin [0000-0002-9515-2562], Bian, Zan [0000-0002-1659-8460], Nicolosi, Valeria [0000-0002-7637-4813], Ferrari, Andrea C [0000-0003-0907-9993], Coleman, Jonathan N [0000-0001-9659-9721], Samorì, Paolo [0000-0001-6256-8281], and Apollo - University of Cambridge Repository

Subjects
Materials science, Biomedical Engineering, Bioengineering, Nanotechnology, 02 engineering and technology, Conjugated system, 010402 general chemistry, 01 natural sciences, 4016 Materials Engineering, law.invention, Switching time, Transition metal, law, Molecule, General Materials Science, Electronics, Electrical and Electronic Engineering, 40 Engineering, 34 Chemical Sciences, Transistor, [CHIM.MATE]Chemical Sciences/Material chemistry, 5104 Condensed Matter Physics, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, 0104 chemical sciences, Percolation, Surface modification, 0210 nano-technology, 51 Physical Sciences
Abstract

Solution-processed semiconducting transition metal dichalcogenides are at the centre of an ever-increasing research effort in printed (opto)electronics. However, device performance is limited by structural defects resulting from the exfoliation process and poor inter-flake electronic connectivity. Here, we report a new molecular strategy to boost the electrical performance of transition metal dichalcogenide-based devices via the use of dithiolated conjugated molecules, to simultaneously heal sulfur vacancies in solution-processed transition metal disulfides and covalently bridge adjacent flakes, thereby promoting percolation pathways for the charge transport. We achieve a reproducible increase by one order of magnitude in field-effect mobility (µFE), current ratio (ION/IOFF) and switching time (τS) for liquid-gated transistors, reaching 10−2 cm2 V−1 s−1, 104 and 18 ms, respectively. Our functionalization strategy is a universal route to simultaneously enhance the electronic connectivity in transition metal disulfide networks and tailor on demand their physicochemical properties according to the envisioned applications. A defect-engineering strategy exploiting dithiolated molecules enables the formation of covalently interconnected networks based on solution-processed transition metal disulfides, leading to devices with enhanced electrical performance and improved characteristics.

Published
2021

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