Search

The emission properties of the Er-doped Si nanoclusters embedded in Si[O.sub.2] (NCSO) prepared by magnetron sputtering on different substrates are analyzed. The observed behavior indicates that the excitation mechanism of the 1.16 micro m photoluminescence (PL) is similar to that shown for Er-doped Si nanoclusters embedded in a Si[O.sub.2] matrix.

High-indium-content InxGa1-xAs/GaAs single/multi-quantum well (SQW/MQW) structures have been systematically investigated. By optimizing the molecular-beam epitaxy growth conditions, the critical thickness of the strained In0.475Ga0.525As/GaAs QWs is raised to 7 nm, which is much higher than the value given by the Matthews and Blakeslee model. The good crystalline quality of the strained InGaAs/GaAs MQWs is proved by x-ray rocking curves. Photoluminescence measurements show that an emission wavelength of 1.25 μm at room temperatures with narrower full width at half maximum less than 30 meV can be obtained. The strain relaxation mechanism is discussed using the Matthews–Blakeslee model. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Abstract: Erbium-doped hydrogenated amorphous silicon suboxide films containing silicon clusters (a-SiO x :H) were prepared. The samples exhibited photoluminescence (PL) peaks at around 750nm and 1.54μm, which could be assigned to the electron–hole recombination in silicon clusters and the intra-4f transition in Er3+, respectively. We compared annealing behaviors of Si clusters and Er3+ emission and found that Si clusters emission depends strongly upon crystallinity of Si clusters, whereas Er3+ emission is not sensitive to whether it is Si nanocrystals (nc-Si) or amorphous Si (a-Si) clusters. The erbium-doped a-SiO x :H films containing either a-Si clusters or nc-Si have the same kind of Er3+-emitting centers. Based on these results, it is concluded that a-Si clusters can play the same role on Er3+ excitation as nc-Si. [Copyright &y& Elsevier]

Zn1−xMnxSe thin films with different Mn compositions are grown by metal-organic chemical vapor deposition on GaAs substrate. Good crystallinity of sample is evidenced by X-ray diffraction and rocking-curve measurements. Photoluminescence (PL) properties were carefully studied. A dominant PL peak close to the band edge is observed at low temperature for samples with higher Mn concentration. The temperature-dependent PL and time-resolved photoluminescence show that this emission peak is associated with the recombination of exciton bound to Mn-induced impurity bound states. It is found that rapid thermal annealing can induce reorganization of Mn composition in alloys and significantly reduce the density of impurity induced by Mn incorporation and improve the intrinsic interband transition. [Copyright &y& Elsevier]