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139 results on '"Bescond, M."'

1. Rate equations description of the asymmetric double barrier electronic cooler.

Author

Philippe, A., Carosella, F., Zhu, X., Salhani, C., Hirakawa, K., Bescond, M., Ferreira, R., and Bastard, G.

Subjects
RESONANT tunneling, RATE equation model, THERMIONIC emission, ELECTRON gas, INJECTION wells, EQUATIONS, PHONONS
Abstract

Recent experimental results showed that an electron gas in an asymmetrical double barrier heterostructure can be effectively cooled down under resonant tunneling condition, thus leading to the realization of an electronic cooler. The cooling process is a multi-parameters phenomenon and it is desirable to handle this problem through a reasonably simple approach, in order to understand the role of each parameter. To this end, we present a rate equation modeling of the electron cooling. We model the resonant tunnel injection of the electrons in the well and their thermionic emission assisted by Longitudinal Optical (LO) phonons absorption and emission. The influence of several parameters on the electronic temperature is discussed. This simple model compares rather well to the predictions of non-equilibrium Green function approach and to the experiments. [ABSTRACT FROM AUTHOR]

Published
2023
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5. List of contributors

Author

Arbiol, J., primary, Bescond, M., additional, Calarco, R., additional, Chen, W., additional, Chèze, C., additional, Dai, X., additional, Dayeh, S.A., additional, den Hertog, Martien Ilse, additional, Dick, K.A., additional, Dogan, P., additional, Erhard, N., additional, Grandidier, B., additional, Holleitner, A., additional, Li, Luying, additional, Liu, B., additional, Mai, L.Q., additional, Miao, J., additional, Murray, G., additional, Olivier, A., additional, Pan, A., additional, Pareige, P., additional, Paul, M., additional, Peng, Lele, additional, Phillips, M.R., additional, Shi, Ye, additional, Soci, C., additional, Thony, P., additional, Tian, B., additional, Ton-That, C., additional, Tong, L., additional, Utama, M.I.B., additional, Wang, Qu-Quan, additional, Wilhelm, C., additional, Xin, C., additional, Xiong, Q.H., additional, Xu, T., additional, Yu, H., additional, Yu, Guihua, additional, Zhang, Anqi, additional, Zhang, Q., additional, Zheng, Gengfeng, additional, Zhou, Li, additional, and Zhu, X., additional

Published
2015
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13. Comparison of junctionless and inversion-mode p-type metal-oxide-semiconductor field-effect transistors in presence of hole-phonon interactions.

Author

Dib, E., Carrillo-Nuñez, H., Cavassilas, N., and Bescond, M.

Subjects
METAL oxide semiconductors, FIELD-effect transistors, QUANTUM theory, PHONONS, TRANSISTORS
Abstract

Junctionless transistors are being considered as one of the alternatives to conventional metal-oxide field-effect transistors. In this work, it is then presented a simulation study of silicon double-gated p-type junctionless transistors compared with its inversion-mode counterpart. The quantum transport problem is solved within the non-equilibrium Green's function formalism, whereas hole-phonon interactions are tackled by means of the self-consistent Born approximation. Our findings show that junctionless transistors should perform as good as a conventional transistor only for ultra-thin channels, with the disadvantage of requiring higher supply voltages in thicker channel configurations. [ABSTRACT FROM AUTHOR]

Published
2016
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14. Influence of electron-phonon interactions in single dopant nanowire transistors.

Author

Carrillo-Nuñez, H., Bescond, M., Cavassilas, N., Dib, E., and Lannoo, M.

Subjects
*PHONONS, *TRANSISTORS, *NANOWIRES, *ENGINEERING, *MINIATURE electronic equipment
Abstract

Single dopant nanowire transistors can be viewed as the ultimate miniaturization of nano electronic devices. In this work, we theoretically investigate the influence of the electron-phonon coupling on their transport properties using a non-equilibrium Green's function approach in the self-consistent Born approximation. For an impurity located at the center of the wire we find that, at room temperature, acoustic phonons broaden the impurity level so that the bistability predicted in the ballistic regime is suppressed. Optical phonons are found to have a beneficial impact on carrier transport via a phonon-assisted tunneling effect. We discuss the position and temperature dependence of these effects, showing that such systems might be very promising for engineering of ultimate devices. [ABSTRACT FROM AUTHOR]

Published
2014
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20. Single donor induced negative differential resistance in silicon n-type nanowire metal-oxide-semiconductor transistors.

Author

Bescond, M., Lannoo, M., Raymond, L., and Michelini, F.

Subjects
*METALLIC oxides, *SEMICONDUCTORS, *TRANSISTORS, *SILICON, *NONMETALS
Abstract

This work presents a theoretical study of the influence of a single donor on the transport properties of silicon nanowire transistors. Using a three-dimensional self-consistent nonequilibrium Green's function approach we find that the donor states induce transitions from resonant to antiresonant Breit-Wigner interferences when increasing the gate or drain voltages. Numerical and analytical calculations demonstrate that these interferences strongly degrade the transistor performances but can also generate a remarkable negative differential resistance behavior. The robustness of this phenomenon with respect to a change of the defect position in the channel is an opportunity to develop novel device properties. [ABSTRACT FROM AUTHOR]

Published
2010
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23. Original shaped nanowire metal-oxide-semiconductor field-effect transistor with enhanced current characteristics based on three-dimensional modeling.

Author

Pons, N., Cavassilas, N., Michelini, F., Raymond, L., and Bescond, M.

Subjects
NANOWIRES, METAL oxide semiconductor field-effect transistors, QUANTUM theory, POISSON'S equation, ELECTRON distribution
Abstract

This work presents original nanowire transistor architectures leading to device performance improvement. The influence of channel geometrical patterns on nanowire metal-oxide-semiconductor-field-effect-transistor characteristics is investigated using three-dimensional real-space quantum-mechanical simulations. Our study shows that indented channel improves the on-off current ratio (Ion/Ioff) by 32%. This remarkable result is induced by both quasiresonances in the on-regime and more significantly by the presence of a thicker channel potential barrier in the subthreshold domain. We then demonstrate that an optimized indented channel represents a manufacturable opportunity to have a much better control of short channel effects in nanowire transistors. [ABSTRACT FROM AUTHOR]

Published
2009
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25. Comprehensive analyses of core–shell InGaN/GaN single nanowire photodiodes

Author

Zhang, H, primary, Guan, N, additional, Piazza, V, additional, Kapoor, A, additional, Bougerol, C, additional, Julien, F H, additional, Babichev, A V, additional, Cavassilas, N, additional, Bescond, M, additional, Michelini, F, additional, Foldyna, M, additional, Gautier, E, additional, Durand, C, additional, Eymery, J, additional, and Tchernycheva, M, additional

Published
2017
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29. Influence of ionized impurities in Silicon Nanowire Transistors

Author

Bescond, M., Lannoo, M., Raymond, L., Fabienne Michelini, Marco Pala, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

National audience

Published
2009

30. Full 3D real-space NEGF simulation of transport and magnetotransport in Si-Nanowire FETs

Author

Buran, C., Marco Pala, Mouis, M., Bescond, M., Michelini, M., Raymond, L., Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), and Domenget, Chahla

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2008

31. A self-consistent full 3D real-space NEGF simulator for studying of non-perturbative effects in nano-MOSFET

Author

Martinez, A., Bescond, M., R. Barker, J., Svizhenkov, A., Anantram, A., Millar, C., Asenov, A., Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), and Domenget, Chahla

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2007

33. Transport in nanowire MOSFETs: influence of the bandstructure

Author

Bescond, M., Institut de Microélectronique, Electromagnétisme et Photonique (IMEP), Université Joseph Fourier - Grenoble 1 (UJF)-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF), and Domenget, Chahla

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Published
2006

34. Etude des bandes d'énergie dans les nanofils semi-conducteurs

Author

Bescond, M., Cavassilas, N., Bertrand, J., Nehari, K., Lannoo, M., Institut de Microélectronique, Electromagnétisme et Photonique (IMEP), Université Joseph Fourier - Grenoble 1 (UJF)-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF), and Domenget, Chahla

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

National audience

Published
2006

35. Modélisation et simulation du transport dans les fils quantiques de silicium : propriétés électroniques et applications aux transistors

Author

Nehari, K., Cavassilas, N., Michelini, Fabienne, Autran, Jean-Luc, Lannoo, M., Bescond, M., Domenget, Chahla, Institut de Microélectronique, Electromagnétisme et Photonique (IMEP), Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

National audience

Published
2006

36. Généralités sur le transport balistique dans les transistors à nanofils

Author

Bescond, M., Institut de Microélectronique, Electromagnétisme et Photonique (IMEP), Université Joseph Fourier - Grenoble 1 (UJF)-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF), and Domenget, Chahla

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Published
2006

37. Nano-transistor MOS à ergot

Author

Cavassilas, N., Autran, Jean-Luc, Bescond, M., Institut de Microélectronique, Electromagnétisme et Photonique (IMEP), Université Joseph Fourier - Grenoble 1 (UJF)-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF), and Domenget, Chahla

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

National audience

Published
2006

38. Modélisation du transport balistique dans des transistors MOS à nanofils arbitrairement orientés

Author

Bescond, M., Cavassilas, N., Nehari, K., Lannoo, M., Institut de Microélectronique, Electromagnétisme et Photonique (IMEP), Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF), Domenget, Chahla, and Université Joseph Fourier - Grenoble 1 (UJF)-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

National audience

Published
2006

39. Electrical modeling and simulation of nanoscale MOS devices with a high-permittivity dielectric gate stack

Author

Autran, J. L., Munteanu, D., michel houssa, Bescond, M., Garros, X., Leroux, C., Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Morais, J and Kumar, D and Houssa, M and Singh, RK and Landheer, D and Ramesh, R and Wallace, RM and Guha, S and Koinuma, Munteanu, Daniela, Morais, J and Kumar, D and Houssa, M and Singh, RK and Landheer, D and Ramesh, R and Wallace, RM and Guha, S and Koinuma, H, and Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

Symposium on Integration of Advanced Micro-and Nanoelectronic Devices held at the 2004 MRS Spring Meeting, San Francisco, CA, APR 13-16, 2004; International audience; The electrical behavior of decananometer MOS transistors with high-kappa dielectric gate stack has been investigated using 2D numerical simulation. Two important electrostatic limitations of high-kappa materials have been analyzed and discussed in this work: i) the gate-fringing field effects which compromise short-channel performance when simultaneously increasing the dielectric constant and its physical thickness and ii) the presence of discrete fixed charges in the gate stack, suspected to be at the origin of the stretch-out of C-V characteristics, that induces 2D potential fluctuations in the structure. In both cases, the resulting degradation of transistor operation and performance is evaluated with a two-dimensional quantum simulation code.

Published
2004

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