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In spin- and angle-resolved photoemission spectroscopy (SARPES) the energy-momentum dispersion of electronic states in crystalline solids is measured along with the spin direction of the photoemitted electrons. The technique therefore allows for mapping out a material's band structure in a spin resolved fashion. By conducting SARPES measurements using low-energy photons, the spin sensitivity of the technique can be combined an increased bulk probe depth, provided by the large electron inelastic mean-free path at these kinetic energies, to directly access the spin structure of electronic states at buried interfaces. Here, we demonstrate this capability by using SARPES to determine the spin polarization of photoelectrons emitted from a 6-nm-thick film of the topological insulator Bi$_2$Se$_3$ using photons with an energy of 8.5 eV. By modelling the expected spin structure in the film, we show that the complex spin polarization that is observed is the integrated spin signal from spin-polarized states at the surface, bulk and buried interface (bottom surface) of the topological-insulator film. Our results therefore allows us to directly determine the spin texture of the buried Dirac interface state. This capability is highly attractive for state-of-the art spectroscopic measurements of the spin-physics at play in quantum-material based or spintronic devices where spin-polarized interface states define the operational principle of the devices., Comment: 9 pages, 4 figures

We study the electronic and spin structures of the giant Rashba-split surface states of the Bi/Si(111)-($\sqrt{3} \times \sqrt{3}$)R30 trimer phase by means of spin- and angle-resolved photoelectron spectroscopy (spin-ARPES). Supported by tight-binding calculations of the surface state dispersion and spin orientation, our findings show that the spin experiences a vortex-like structure around the $\bar{\Gamma}$-point of the surface Brillouin zone - in accordance with the standard Rashba model. Moreover, we find no evidence of a spin vortex around the $\bar{\mathrm{K}}$-point in the hexagonal Brillouin zone, and thus no peculiar Rashba split around this point, something that has been suggested by previous works. Rather the opposite, our results show that the spin structure around $\bar{\mathrm{K}}$ can be fully understood by taking into account the symmetry of the Brillouin zone and the intersection of spin vortices centered around the $\bar{\Gamma}$-points in neighboring Brillouin zones. As a result, the spin structure is consistently explained within the standard framework of the Rashba model although the spin-polarized surface states experience a more complex dispersion compared to free-electron like parabolic states., Comment: 9 pages, 5 figures

We report an angle-resolved photoemission study of the charge stripe ordered La$_{1.6-x}$Nd$_{0.4}$Sr$_x$CuO$_4$ system. A comparative and quantitative line shape analysis is presented as the system evolves from the overdoped regime into the charge ordered phase. On the overdoped side ($x=0.20$), a normal state anti-nodal spectral gap opens upon cooling below ~ 80 K. In this process spectral weight is preserved but redistributed to larger energies. A correlation between this spectral gap and electron scattering is found. A different lineshape is observed in the antinodal region of charge ordered Nd-LSCO $x=1/8$. Significant low-energy spectral weight appears to be lost. These observations are discussed in terms of spectral weight redistribution and gapping %of spectral weight originating from charge stripe ordering., Comment: Accepted by PRB

Since the advent of topological insulators hosting symmetry-protected Dirac surface states, efforts have been made to gap these states in a controllable way. A new route to accomplish this was opened up by the discovery of topological crystalline insulators (TCIs) where the topological states are protected by real space crystal symmetries and thus prone to gap formation by structural changes of the lattice. Here, we show for the first time a temperature-driven gap opening in Dirac surface states within the TCI phase in (Pb,Sn)Se. By using angle-resolved photoelectron spectroscopy, the gap formation and mass acquisition is studied as a function of composition and temperature. The resulting observations lead to the addition of a temperature- and composition-dependent boundary between massless and massive Dirac states in the topological phase diagram for (Pb,Sn)Se (001). Overall, our results experimentally establish the possibility to tune between a massless and massive topological state on the surface of a topological system., Comment: 5 pages, 3 figures

The recent discovery of a topological phase transition in IV-VI narrow-gap semiconductors has revitalized the decades-old interest in the bulk band inversion occurring in these materials. Here we systematically study the (001) surface states of Pb{1-x}Sn{x}Se mixed crystals by means of angle-resolved photoelectron spectroscopy in the parameter space 0 <= x <= 0.37 and 300 K >= T >= 9 K. Using the surface-state observations, we monitor directly the topological phase transition in this solid solution and gain valuable information on the evolution of the underlying fundamental band gap of the system. In contrast to common model expectations, the band-gap evolution appears to be nonlinear as a function of the studied parameters, resulting in the measuring of a discontinuous band inversion process. This finding signifies that the anticipated gapless bulk state is in fact not a stable configuration and that the topological phase transition therefore exhibits features akin to a first-order transition., Comment: article + supplemental figures

We present angle resolved photoemission spectroscopy measurements of the surface states on in-situ grown (111) oriented films of Pb$_{1-x}$Sn$_{x}$Se, a three dimensional topological crystalline insulator. We observe surface states with Dirac-like dispersion at $\bar{\Gamma}$ and $\bar{M}$ in the surface Brillouin zone, supporting recent theoretical predictions for this family of materials. We study the parallel dispersion isotropy and Dirac-point binding energy of the surface states, and perform tight-binding calculations to support our findings. The relative simplicity of the growth technique is encouraging, and suggests a clear path for future investigations into the role of strain, vicinality and alternative surface orientations in (Pb,Sn)Se compounds., Comment: 5 pages, 4 figures

We study the nature of (001) surface states in Pb_{0.73}Sn_{0.27}Se in the newly discovered topological-crystalline-insulator (TCI) phase as well as the corresponding topologically trivial state above the band-gap-inversion temperature. Our calculations predict not only metallic surface states with a nontrivial chiral spin structure for the TCI case, but also nonmetallic (gapped) surface states with nonzero spin polarization when the system is a normal insulator. For both phases, angle- and spin-resolved photoelectron spectroscopy measurements provide conclusive evidence for the formation of these (001) surface states in Pb_{0.73}Sn_{0.27}Se, as well as for their chiral spin structure., Comment: 6 pages, 2 figures

The low-energy electronic structure of the J_{eff}=1/2 spin-orbit insulator Sr3Ir2O7 has been studied by means of angle-resolved photoemission spectroscopy. A comparison of the results for bilayer Sr3Ir2O7 with available literature data for the related single-layer compound Sr2IrO4 reveals qualitative similarities and similar J_{eff}=1/2 bandwidths for the two materials, but also pronounced differences in the distribution of the spectral weight. In particuar, photoemission from the J_{eff}=1/2 states appears to be suppressed. Yet, it is found that the Sr3Ir2O7 data are in overall better agreement with band-structure calculations than the data for Sr2IrO4., Comment: 5 pages, 3 figures

Several proposed applications and exotic effects in topological insulators rely on the presence of helical Dirac states at the interface between a topological and a normal insulator. In the present work, we have used low-energy angle-resolved photoelectron spectroscopy to uncover and characterize the interface states of Bi$_2$Se$_3$ thin films and Bi$_2$Te$_3$/Bi$_2$Se$_3$ heterostuctures grown on Si(111). The results establish that Dirac fermions are indeed present at the topological-normal-insulator boundary and absent at the topological-topological-insulator interface. Moreover, it is demonstrated that band bending present within the topological-insulator films leads to a substantial separation of the interface and surface states in energy. These results pave the way for further studies and the realization of interface-related phenomena in topological-insulator thin-film heterostructures., Comment: 9 pages, 5 figures

Topological insulators are a novel class of quantum materials in which time-reversal symmetry, relativistic (spin-orbit) effects and an inverted band structure result in electronic metallic states on the surfaces of bulk crystals. These helical states exhibit a Dirac-like energy dispersion across the bulk bandgap, and they are topologically protected. Recent theoretical proposals have suggested the existence of topological crystalline insulators, a novel class of topological insulators in which crystalline symmetry replaces the role of time-reversal symmetry in topological protection [1,2]. In this study, we show that the narrow-gap semiconductor Pb(1-x)Sn(x)Se is a topological crystalline insulator for x=0.23. Temperature-dependent magnetotransport measurements and angle-resolved photoelectron spectroscopy demonstrate that the material undergoes a temperature-driven topological phase transition from a trivial insulator to a topological crystalline insulator. These experimental findings add a new class to the family of topological insulators. We expect these results to be the beginning of both a considerable body of additional research on topological crystalline insulators as well as detailed studies of topological phase transitions., Comment: v2: published revised manuscript (6 pages, 3 figures) and supplementary information (5 pages, 8 figures)

We present an experimental setup for laser-based angle-resolved time-of-flight (LARTOF) photoemission. Using a picosecond pulsed laser, photons of energy 10.5 eV are generated through higher harmonic generation in xenon. The high repetition rate of the light source, variable between 0.2-8 MHz, enables high photoelectron count rates and short acquisition times. By using a Time-of-Flight (ToF) analyzer with angle-resolving capabilities electrons emitted from the sample within a circular cone of up to \pm15 degrees can be collected. Hence, simultaneous acquisition of photoemission data for a complete area of the Brillouin zone is possible. The current photon energy enables bulk sensitive measurements, high angular resolution and the resulting covered momentum space is large enough to enclose the entire Brillouin zone in cuprate high-Tc superconductors. Fermi edge measurements on polycrystalline Au shows an energy resolution better than 5 meV. Data from a test measurement of the Au(111) surface state is presented along with measurements of the Fermi surface of the high-Tc superconductor Bi2212., Comment: 9 pages, 7 figures

A new type of hemispherical electron energy analyzer that permits angle and spin resolved photoelectron spectroscopy has been developed. The analyzer permits standard angle resolved spectra to be recorded with a two-dimensional detector in parallel with spin detection using a mini-Mott polarimeter. General design considerations as well as technical solutions are discussed and test results from the Au(111) surface state are presented.