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5. Tu4E-4 Multi-channel Schottky-gate BRIDGE HEMT Technology for Millimeter-Wave Power Amplifier Applications

8. InAs/A1Sb HEMT and its application to ultra-low-power wideband high-gain low-noise amplifiers

10. Direct Growth of III-V Devices on Silicon

11. (Invited) GaN-Based Multiple 2DEG Channel BRIDGE (Buried Dual Gate) HEMT Technology for High Power and Linearity

13. Si/InP Heterogeneous Integration Techniques from the Wafer-Scale (Hybrid Wafer Bonding) to the Discrete Transistor (Micro-Transfer Printing)

17. (Invited) GaN-Based Multiple 2DEG Channel BRIDGE (Buried Dual Gate) HEMT Technology for High Power and Linearity

26. Molecular Beam Epitaxy Growth of High Mobility Compound Semiconductor Devices for Integration with Si CMOS

27. Direct Growth of III-V Devices on Silicon

29. Proton Tolerance of InAs Based HEMT and DHBT Devices

31. Ultra-High-Speed Low-Noise InP-HEMT Technology

32. Direct Growth of III-V Devices on Silicon.

33. (Invited)GaN-Based Multiple 2DEG Channel BRIDGE (Buried Dual Gate) HEMT Technology for High Power and Linearity

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