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Bulk acoustic wave (BAW) filters have been proven to be of high demand in today's low power RF front-ends for mobile communication devices. Within the launch of 5G applications worldwide, especially in the region of new radio (nr-1) up to 6 GHz, defined frequency bands require filters of wide bandwidths, while simultaneously featuring steep edges and high out-of-band rejection. Due to the coexistence with 4G LTE (long term evolution) wireless standards as well as advanced data transfer concepts such as carrier aggregation, the increasing complexity of antenna systems forces the implementation of highly selective acoustic filters. In contrast to the widely used surface acoustic wave (SAW) technology, BAW filters appear with superior performance for frequencies above 1 GHz. This work describes the fabrication of a BAW-solidly mounted resonator (BAW-SMR) with a tailored material system of a-SiOCN:H as a low impedance (low-Z) material integrated within its acoustic Bragg mirror. A direct comparison to the widely used low-Z material of SiO2 with an acoustic impedance of around 13 MRayl is demonstrated by two equal resonator stacks by replacing only the uppermost low-Z thin film of the acoustic reflector. A single-mask design was chosen with platinum as a bottom electrode to ensure the most equal growth conditions for the piezoelectric aluminum nitride (AlN) layers on both reflectors' surfaces featuring either the tailored a-SiOCN:H or standard SiO2. The a-SiOCN:H thin films were deposited by plasma-enhanced chemical vapor deposition and the according acoustic impedance was priorly depicted to 7.1 MRayl, which could be exploited to achieve an increase in the effective coupling coefficient beyond 7% as well as a resonator bandwidth of more than 60 MHz. [ABSTRACT FROM AUTHOR]

The 5th generation (5G) wireless telecommunication standards with newly defined frequency bands up to 6 GHz are currently established around the world. While outperforming surface acoustic wave (SAW) filters above 1 GHz, bulk acoustic wave (BAW) resonators in multiplexers for radio-frequency front-end (RFFE) modules continuously face higher performance requirements. In contrast to free-standing bulk acoustic resonators (FBARs), solidly mounted resonator (SMR) technology uses an acoustic Bragg mirror, which has already been successfully applied for several GHz applications. In this work, we investigate the potential of amorphous hydrogenated silicon-oxycarbonitride (a-SiOCN:H) thin films synthesized with low-temperature plasma-enhanced chemical vapor deposition (PECVD) as a low acoustic impedance (low-Z) material. Compared to the state-of-the-art where in Bragg mirrors up to now SiO2 is used as standard, the acoustic impedance ratio against the high-Z material tungsten (W) is enhanced for a better device performance. To limit the expected increase in viscous loss when the acoustic impedance is reduced, to a minimum, predominantly the mass density was reduced while keeping the mechanical elasticity high. By doing so, acoustic impedance values as low as 7.1 MRayl were achieved, thereby increasing the impedance ratio of high-Z to low-Z materials from 8:1 up to 14:1. [ABSTRACT FROM AUTHOR]

Alloying transition metals into aluminum nitride (AlN) has surged over the past decade to increase the piezoelectric performance of AlN for microelectromechanical systems (MEMS) applications. So far, the highest piezoelectric coefficients have been achieved by alloying scandium into AlN. But, most recently published studies have theoretically predicted by ab‐initio calculations that yttrium can also be a promising and less expensive alternative to scandium. This paper focuses on the impact of an AlN seed layer on the growth and piezoelectric properties of sputter‐deposited, polycrystalline Y0.15Al0.85N thin films on a silicon substrate. For the first time, the increase in piezoelectric performance of YxAl1−xN (x = 15%) thin films with a d33 of ≈7.85 pC N−1 due to this seed layer approach is presented, thus reaching in good agreement theoretical predictions. Furthermore, for the first time, the crystalline stability of Y0.15Al0.85N layers in a pure oxygen environment up to 1200 °C is reported, demonstrating a high oxygen resistance up to 800 °C even in this harsh environment. Detailed thin film analysis is done with various techniques such as X‐ray diffraction, atomic force microscopy, nano‐indentation, and high‐resolution transmission electron microscopy and correlated with piezoelectric coefficient measurements. [ABSTRACT FROM AUTHOR]