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34 results on '"Bennett, Mitchell F."'

4. Gaas Displacement Damage Dosimeter Based on Diode Dark Currents

Author

Warner Jeffrey H., Messenger Scott R., Cress Cory D., Roche Nicolas J-H, Yakes Michael, Clarke Kenneth, Bennett Mitchell F., Jenkins Phillip P., and Walters Robert J.

Subjects
Environmental sciences, GE1-350
Abstract

GaAs diode dark currents are correlated over a very large proton energy range as a function of displacement damage dose (DDD). The linearity of the dark current increase with DDD over a wide range of applied voltage bias deems this device an excellent candidate for a displacement damage dosimeter. Additional proton testing performed in situ enabled error estimate determination to within 10% for simulated space use.

Published
2017
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7. Micro-Transfer Printer-Assembled Five Junction CPV Microcell Development

Author

Schmieder, Kenneth J., primary, Ruppalt, Laura, additional, Pulwin, Ziggy, additional, Burroughs, Scott, additional, Lumb, Matthew P., additional, Mood, Thomas C., additional, Meitl, Matthew A., additional, Fisher, Brent, additional, Carter, Jim, additional, Bennett, Mitchell F., additional, Armour, Eric A., additional, Diaz, Martin, additional, and Kotulak, Nicole A., additional

Published
2019
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8. A micro-concentrator photovoltaic module incorporating a bifacial silicon solar cell for direct and diffuse light capture

Author

Lumb, Matthew P., primary, Meitl, Matt, additional, Carter, Jim, additional, Samarskiy, Miroslav, additional, Burroughs, Scott, additional, Schmieder, Kenneth J., additional, Mood, Thomas C., additional, Bennett, Mitchell F., additional, Taploo, Anmol, additional, Moore, James E., additional, Scheiman, David, additional, Armour, Eric, additional, and Fisher, Brent, additional

Published
2019
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10. Back Surface Plasmonic Grating for Increased Quantum Efficiency of nBn Photodetectors With Ultra-Thin Metamorphic InAs0.8Sb0.2 Absorber

Author

Nolde, Jill A., primary, Jackson, Eric M., additional, Warren, Michael V., additional, Canedy, Chadwick L., additional, Tomasulo, Stephanie, additional, Bennett, Mitchell F., additional, Kim, Mijin, additional, Cleveland, Erin R., additional, Kim, Chul Soo, additional, Affouda, Chaffra A., additional, Ellis, Chase T., additional, Vurgaftman, Igor, additional, Meyer, Jerry R., additional, and Aifer, Edward H., additional

Published
2019
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12. Enhanced Optical Absorption in an Ultra-thin Textured Solar Cell Using Nanosphere Natural Photolithography

Author

Cleveland, Erin R., primary, Hirst, Louise C., additional, Brittman, Sarah, additional, Tomasulo, Stephanie, additional, Bennett, Mitchell F., additional, Mellor, Alexander V., additional, Pearce, Pheobe, additional, Jenkins, Phillip P., additional, Walters, Robert J., additional, Ekins-Daukes, Nicholas J., additional, and Yakes, Michael K., additional

Published
2018
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15. GaSb‐Based Solar Cells for Full Solar Spectrum Energy Harvesting

Author

Lumb, Matthew P., primary, Mack, Shawn, additional, Schmieder, Kenneth J., additional, González, María, additional, Bennett, Mitchell F., additional, Scheiman, David, additional, Meitl, Matthew, additional, Fisher, Brent, additional, Burroughs, Scott, additional, Lee, Kyu‐Tae, additional, Rogers, John A., additional, and Walters, Robert J., additional

Published
2017
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17. Ultra-Thin GaAs solar cells: radiation tolerance and space applications

Author

Hirst, Louise C., primary, Walters, Robert J., additional, Jenkins, Phillip P., additional, Yakes, Michael K., additional, Warner, Jeffery. H., additional, Bennett, Mitchell F., additional, Schmieder, Kenneth J., additional, Tomasulo, Stephanie, additional, Cleveland, Erin, additional, Maximenko, Sergey, additional, and Moore, James, additional

Published
2017
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19. Economic Analysis of Transfer Printed III–V Virtual Substrates

Author

Schmieder, Kenneth J., primary, Meitl, Matthew, additional, Tischler, Joseph G., additional, Walters, Robert J., additional, Lumb, Matthew P., additional, Yakes, Michael K., additional, Mack, Shawn, additional, Bennett, Mitchell F., additional, Maximenko, Sergey I., additional, Ruppalt, Laura B., additional, Meeker, Michael A., additional, and Ellis, Chase T., additional

Published
2017
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22. Towards the ultimate multi-junction solar cell using transfer printing

Author

Lumb, Matthew P., primary, Meitl, Matt, additional, Schmieder, Kenneth J., additional, Gonzalez, Maria, additional, Mack, Shawn, additional, Yakes, Michael K., additional, Bennett, Mitchell F., additional, Frantz, Jesse, additional, Steiner, Myles A., additional, Geisz, John F., additional, Friedman, Daniel J., additional, Slocum, Michael A., additional, Hubbard, Seth M., additional, Fisher, Brent, additional, Burroughs, Scott, additional, and Walters, Robert J., additional

Published
2016
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23. GaAs Displacement Damage Dosimeter Based on Diode Dark Currents

Author

Warner, Jeffrey H., primary, Messenger, Scott R., additional, Cress, Cory D., additional, Walters, Robert J., additional, Roche, Nicolas J.-H., additional, Clark, Kenneth A., additional, Bennett, Mitchell F., additional, Blackmore, Ewart W., additional, and Trinczek, Michael, additional

Published
2015
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25. Evaluation of strained InAlAs as a window layer for wide bandgap materials lattice matched to InP

Author

Yakes, Michael K., primary, Schmieder, Kenneth J., additional, Lumb, Matthew P., additional, Bennett, Mitchell F., additional, Gonzalez, Maria, additional, Cunningham, Paul D., additional, Khachatrian, Ani, additional, Hirst, Louise C., additional, Tomasulo, Stephanie, additional, Kotulak, Nicole A., additional, Melinger, Joseph S., additional, and Walters, Robert J., additional

Published
2015
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26. Analysis of gaas photovoltaic device losses at high MOCVD growth rates

Author

Schmieder, Kenneth J., primary, Lumb, Matthew P., additional, Yakes, Michael K., additional, Gonzalez, Maria, additional, Cunningham, Paul D., additional, Khachatrian, Ani, additional, Bennett, Mitchell F., additional, Hirst, Louise C., additional, Kotulak, Nicole A., additional, Pulwin, Ziggy, additional, Bailey, Christopher G., additional, Hubbard, Seth M., additional, Melinger, Joseph S., additional, Ebert, Chris W., additional, and Walters, Robert J., additional

Published
2015
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27. Transfer-printing for the next generation of multi-junction solar cells

Author

Lumb, Matthew P., primary, Meitl, Matthew, additional, Fisher, Brent, additional, Burroughs, Scott, additional, Schmieder, Kenneth J., additional, Gonzalez, Maria, additional, Yakes, Michael K., additional, Mack, Shawn, additional, Hoheisel, Raymond, additional, Bennett, Mitchell F., additional, Ebert, Chris W., additional, Forbes, David V., additional, Bailey, Christopher G., additional, and Walters, Robert J., additional

Published
2015
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29. Realizing the next generation of CPV cells using transfer printing

Author

Lumb, Matthew P., primary, Schmieder, Kenneth J., additional, González, María, additional, Mack, Shawn, additional, Yakes, Michael K., additional, Meitl, Matthew, additional, Burroughs, Scott, additional, Ebert, Chris, additional, Bennett, Mitchell F., additional, Forbes, David V., additional, Sheng, Xing, additional, Rogers, John A., additional, and Walters, Robert J., additional

Published
2015
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34. Quantum Dot Enhanced Epitaxial Lift-Off Solar Cells

Author

Bennett, Mitchell F

Subjects
Epitaxial lift-off, Gallium arsenide, Solar cells--Design and construction, Solar cells--Materials, Quantum dots--Optical properties, Quantum dots--Mechanical properties, Materials Chemistry
Abstract

Embedded nanostructures such as quantum dots (QDs) have been studied for many applications in solar cells including enhanced mini-band absorption in intermediate-band solar cells and current matching in multi junction cells. The major drawbacks of using such techniques to decrease intrinsic solar cell loss mechanisms are twofold: first, it is difficult to maintain partially populated states using QDs due to a quick thermal extraction of carriers; second, QDs have a weak absorption which necessitates a near-perfect control of QD growth mechanisms to carefully ensure a balance between dot size and density. One avenue for improving absorption into QDs is to utilize a thin cell with a back surface reflector in order to increase the effective optical path length (OPL) of light through the QD region, which has the potential to increase absorption into QD states. One method for the processing of thin solar cells that has been experimentally demonstrated on large 4-6” wafers is epitaxial lift-off, which takes advantage of an inverted growth and a wet chemical etch of a sacrificial release layer to remove the substrate. In this thesis, 0.25 cm2 InAs/GaAs QD cells were grown on 4” wafers, fabricated, and processed by epitaxial lift off, creating thin and flexible devices. Materials and optical characterization techniques such as atomic force microscopy and photoluminescence were used on test structures prior to and following ELO, and analysis indicated that QD optical coherence and material quality after ELO processing were preserved, although non-uniform. This was concluded to be caused by the radial thermal profile of the growth reactor, through which spatial dependence led to local variations in QD quality and size across the 4” wafer, indicative of the high temperature sensitivity of QDs. Transmission electron microscopy measurements were used to investigate defects and dislocations throughout the QD device structure that would impact performance, and showed a higher concentration of defects in regions of the wafer subject to a higher temperature during growth. A similar pattern of radial dependence was observed in solar cell devices by electrical characterization. Current-voltage measurements under one-sun AM0 illumination were taken on several cells around the wafer, showing a statistical variation in solar cell device metrics dependent on wafer position. Spectral responsivity measurements show an established cavity mode pattern in sub-host bandgap wavelengths, which is discussed as an enhancement due to the thinning of the device. Integrated external quantum efficiency shows a QD contribution to the short circuit current density of 0.23 mA/cm2. In addition to optical, materials, and electrical characterization, QD and baseline ELO devices were exposed to alpha radiation to gauge the effects of a harmful environment on cell performance. The QD device exhibited a remaining factor increase of 2 % (absolute) in conversion efficiency over the baseline device at an end of life alpha particle fluence of 5x109α/cm2/s. In addition, linear temperature coefficients for solar cell figures of merit were extracted as a function of increasing α fluence. At a fluence of 5x108α/cm2/s, the QD device showed an efficiency temperature coefficient 0.2 %/°C higher (absolute) than the baseline, indicating that the inclusion of QDs could improve the radiation and temperature tolerance of solar cell devices used for space applications.

Published
2013

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